IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
Teilenummer: IPB020N10N5LFATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.35 | $335,00 |
| 500 | $2.95 | $1.475,00 |
| 1.000 | $2.62 | $2.620,00 |
IPB020N10N5LFATMA1 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used to switch or linearly regulate current in power-conversion circuits. MOSFETs sit within the discrete-semiconductor hierarchy: transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode power MOSFET. The Linear FET sub-category is engineered to dissipate significant power in the linear region for hot-swap, e-fuse, in-rush current limiter, and active OR-ing applications where the device must operate in saturation for extended periods.
Key differentiating features include a maximum pulsed drain current of 10.2 A at VDS=56 V and tp=10 ms (SOA-anchored linear-mode rating), a maximum silicon-limited drain current of 289 A, and a package-limited current of 120 A. The PG-TO263-3 package supports 313 W power dissipation at Tc and is qualified for surface-mount reflow assembly. The OptiMOS 5 cell design achieves low gate charge and low figure-of-merit (FOM = RDS(on) × Qg), reducing switching and conduction losses.
Architecturally, the device uses Infineon's latest-generation trench MOSFET cell optimized for linear-mode ruggedness; the wide SOA is achieved through uniform cell pitch and carefully tuned body-diode characteristics. The combination of 2.0 mΩ RDS(on) and broad SOA enables designers to replace multiple paralleled MOSFETs or bulky mechanical solutions with a single device in many hot-swap and battery-protection topologies.
Typical applications include 48 V telecom hot-swap controllers, server and data-center OR-ing FETs, battery management system (BMS) protection, e-fuse circuits, motor-drive brake circuits, and industrial load-switching where in-rush current limiting is required. The D2PAK footprint is compatible with standard TO-263 land patterns and supports high-current PCB designs.
When designing with this part, derate continuous current to 120 A (package-limited) in real layouts and validate SOA against worst-case transient thermal conditions using the manufacturer's SOA curves. The wide SOA allows sustained operation at high VDS, but junction temperature must stay below 175 °C and thermal design must account for board-mounted RthJA.
This page synthesizes distributor pricing, drop-in alternatives from the same OptiMOS 5 Linear FET family, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für IPB020N10N5LFATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPB020N10N5LFATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, MSL Level, Operating Temperature Range, Part Number.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPB017N10N5LFATMA1
✅ Drop-In✓ Auf Lager
$4.05 / Stück
Datenblatt ansehen →IPB044N10N5LFATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPB029N10N5LFATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPB072N10N3GATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPB180N10S402ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPB020N10N5LFATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET |
| Technology | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) max | 100 V |
| Continuous Drain Current (Tc) | 176 A |
| Silicon-Limited Drain Current | 289 A |
| Package-Limited Drain Current | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A |
| On-State Resistance RDS(on) max | 2.0 mΩ |
| Total Power Dissipation (Tc) | 313 W |
| Gehäuse | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C |
| Gate Threshold Voltage VGS(th) typ | 2.5 V |
| RoHS-Status | Compliant |
| MSL-Level | 1 |
| Marking Code | 020N10LF |
IPB020N10N5LFATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input; drive with 10 V VGS for full enhancement |
| Pin 2 | Drain — Drain terminal (also connected to exposed metal tab) |
| Pin 3 | Source — Source terminal (low-side reference for gate drive) |
Sicherer Arbeitsbereich - IPB020N10N5LFATMA1
Typische Anwendungen
IPB020N10N5LFATMA1 ist geeignet für 6 Anwendungs: 48 V Telecom Hot-Swap Controller, Server and Data-Center OR-ing FET, Battery Management System (BMS) Protection, Industrial e-Fuse Circuit, Motor Drive Dynamic Braking, Active In-Rush Current Limiter.
48 V Telecom Hot-Swap Controller
The IPB020N10N5LFATMA1 is ideally suited for 48 V telecom hot-swap controllers where it must operate in the linear region during card insertion to limit in-rush current into backplane bulk capacitors. Its wide SOA at VDS=56 V allows sustained dissipation of tens of watts during the linear-mode period without thermal runaway, and the 2.0 mΩ RDS(on) keeps conduction losses under 100 mW at 7 A nominal load once fully enhanced.
Empfohlen
Server and Data-Center OR-ing FET
In redundant server power-supply OR-ing, the IPB020N10N5LFATMA1 acts as the low-loss reverse-blocking element between two 48 V rails. Its 2.0 mΩ RDS(on) reduces forward-voltage drop to ~50 mV at 25 A, cutting conduction losses by 70% versus Schottky-diode solutions, while the wide SOA handles transient reverse-current events during hot-swapping without device failure.
Empfohlen
Battery Management System (BMS) Protection
The IPB020N10N5LFATMA1 is used in BMS discharge and protection paths of 48 V lithium battery stacks, where the MOSFET must sustain brief fault-current pulses at high VDS. The wide SOA supports 10.2 A pulsed at 56 V for 10 ms - enough headroom for most external short-circuit events before the BMS controller trips, while 2.0 mΩ RDS(on) keeps steady-state losses below 1 W at 22 A continuous discharge.
Empfohlen
Industrial e-Fuse Circuit
The IPB020N10N5LFATMA1 functions as the main pass element in 48 V industrial e-fuse circuits, where it transitions from fully-on to linear-mode current limiting when a downstream fault is detected. Its wide SOA allows sustained linear-mode operation at fault-current levels for the duration required by the controller to confirm the fault and latch off, while 313 W Tc power dissipation provides ample thermal budget for short-duration faults.
Empfohlen
Motor Drive Dynamic Braking
In BLDC and servo motor-drive brake circuits, the IPB020N10N5LFATMA1 dissipates regenerative energy through a controlled linear-mode brake resistor path. The wide SOA supports sustained VDS at high peak current during emergency stops, while the 2.0 mΩ RDS(on) keeps steady-state brake-circuit conduction loss low. The D2PAK package mounts to the heatsink via the drain tab for effective thermal coupling.
Empfohlen
Active In-Rush Current Limiter
The IPB020N10N5LFATMA1 is used as a controlled in-rush current limiter on 48 V to 12 V intermediate bus converters, replacing traditional NTC thermistors with an actively controlled linear-region element. The wide SOA guarantees safe operation during the bulk-capacitor charge-up transient, and the low RDS(on) minimizes post-startup losses to less than 50 mW at 5 A - a 90% reduction versus NTC-based designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPB020N10N5LFATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPB017N10N5LFATMA1 | IPB029N10N5LFATMA1 | IPB044N10N5LFATMA1 | IPB072N10N3GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS max | 100 V | 100 V | 100 V | 100 V | 100 V |
| RDS(on) max | 2.0 mΩ | 1.7 mΩ | 2.9 mΩ | 4.4 mΩ | 7.2 mΩ |
| Linear FET / Wide SOA | Yes (OptiMOS 5 LF) | Yes | Yes | Yes | No (standard OptiMOS 3) |
| Power Dissipation (Tc) | 313 W | 313 W (same package) | 313 W (same package) | 313 W (same package) | 313 W (same package) |
| Approximate Unit Price (qty 100) | $3.35 | Higher (~+15%) | Lower (~-10%) | Lower (~-25%) | Lower (~-40%) |
Wichtigste Unterscheidungsmerkmale
- Wide SOA explicitly characterized for linear-mode operation (vs. IPB072N10N3GATMA1)
- Lower RDS(on) at similar cost (vs. IPB029N10N5LFATMA1)
- Higher continuous current than higher-RDS(on) family members (vs. IPB044N10N5LFATMA1)
- Same package, current-graded family for design flexibility (vs. IPB017N10N5LFATMA1)
Designhinweise
In linear-mode operation (hot-swap, e-fuse, in-rush limiting), the IPB020N10N5LFATMA1 dissipates power P = VDS × ID continuously. Estimated: at VDS=56 V and ID=10 A, P=560 W - far exceeding steady-state capability. The board-mounted thermal resistance (RthJA with 1 sq-in copper pour) is typically ~40 °C/W, so continuous power must be kept below ~3 W to maintain Tj under 150 °C. Use pulsed operation or heatsinking for sustained high dissipation.
The PG-TO263-3 (D2PAK) drain tab is the primary thermal path. Solder the tab to a minimum 1 square inch of 2 oz copper pour on the top layer, with thermal vias to inner copper planes. Inadequate copper area is the most common cause of linear-mode MOSFET failure. For sustained 100 W+ dissipation, add an external heatsink with thermal compound (Rth < 1 °C/W).
Minimize the high-current loop area between the drain tab, source pin, and the load. Keep gate-drive traces short (<20 mm) and use a gate-source resistor (10 kΩ) and gate-source capacitor (10 nF) to prevent false turn-on from dV/dt coupling. Place the gate driver within 10 mm of the gate pin to limit parasitic inductance.
Do not assume the silicon-limited ID (289 A) is achievable in real layouts - the package-limited current is 120 A. Always consult the SOA curves at the actual VDS and pulse duration, not the absolute maximum ID rating. Operating above the SOA line will destroy the device even though VDS and ID individually stay below their absolute maximums.
Drive the gate with a 10 V VGS for full enhancement and minimum RDS(on). A gate driver capable of 2 A peak source/sink current is recommended to switch the gate charge quickly and minimize transition losses in linear-region operation. For hot-swap controllers, ensure the controller monitors VDS or Tj to back off the gate voltage under fault conditions.
Compliance-Informationen
RoHS and REACH compliant per Infineon product declaration. PG-TO263-3 package uses Pb-free matte-tin plating suitable for 260 °C reflow per JEDEC J-STD-020. AEC-Q100 not qualified - this part is not intended for automotive safety-critical applications.
