IPD60R600C6 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
Teilenummer: IPD60R600C6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.69 | $0,69 |
| 10 | $0.62 | $6,20 |
| 100 | $0.55 | $55,00 |
| 500 | $0.48 | $240,00 |
| 1.000 | $0.42 | $420,00 |
IPD60R600C6 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy in switched-mode power supplies, motor drives, and power-factor-correction stages. CoolMOS C6 is Infineon's sixth-generation superjunction technology, which reduces R DS(on) * area product compared to conventional planar MOSFETs while maintaining fast switching and ease of use.
Key specifications include a 600 V drain-to-source voltage rating (V DSS), 7.3 A continuous drain current at 25 C case temperature (I D), 600 mOhm maximum static on-resistance (R DS(on)) at V GS = 10 V, and 63 W maximum power dissipation (P D) at T C = 25 C. The device is housed in a PG-TO252-3 surface-mount package, also known as DPAK, providing a low-profile outline with an exposed thermal pad for PCB heatsinking.
The CoolMOS C6 architecture uses a deep-trench superjunction structure to achieve a low specific on-resistance while keeping the body diode robust enough for hard-switching topologies. Compared to older C3 and CFD families, C6 simplifies gate-drive requirements and offers an improved Figure-of-Merit (FOM = R DS(on) * Q G) that translates into lower conduction and switching losses in PFC, LLC, and flyback converters.
Typical applications include PFC boost stages in 400 V SMPS, solar inverters, LED drivers, HID lamp ballasts, and industrial auxiliary power supplies. The 600 V rating provides ample margin for 230 V AC rectified rails (peak ~325 V) and 380 V DC bus operation.
When designing with IPD60R600C6, select a gate-drive voltage of 10 V to fully enhance the channel and minimize R DS(on). Keep the switching loop inductance low by minimizing the drain-to-bypass-capacitor distance, since superjunction MOSFETs switch quickly and are sensitive to parasitic inductance.
This page synthesizes distributor pricing, drop-in CoolMOS alternatives in PG-TO252-3, and practical PFC design notes not collected in a single location in the Infineon datasheet.
Drop-in-Alternativen für IPD60R600C6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPD60R600C6 (gleiche Bauform und Footprint) – abweichend in Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPD60R600CP
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD60R1K4C6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD60R2K0C6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD60R380C6ATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →STF13N60M2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FCPF600N60Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD60R600C6 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C6 |
| FET Type | N-Channel |
| Technology | Superjunction (CoolMOS) |
| Drain-to-Source Voltage (V DSS) | 600 V |
| Continuous Drain Current (I D) at T C = 25 C | 7.3 A |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | 600 mOhm |
| Maximum Power Dissipation (P D) at T C = 25 C | 63 W |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C |
| Gehäuse | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount |
| MSL-Level | 1 |
| RoHS-Status | Compliant |
IPD60R600C6 Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate drive input (10 V typical enhancement) |
| Pin 2 | Drain — MOSFET drain, internally bonded to the metal tab |
| Pin 3 | Source — MOSFET source, power return path |
| Pin TAB | Drain (TAB) — Exposed metal tab internally connected to Pin 2; solder to PCB copper for thermal dissipation |
Sicherer Arbeitsbereich (DC, T_C = 25 C)
Typische Anwendungen
IPD60R600C6 ist geeignet für 7 Anwendungs: Power Factor Correction (PFC) Boost Stage, LLC Half-Bridge Primary Switch, Solar Micro-Inverter / String Inverter, HID Lamp Ballast and LED Driver, Industrial Auxiliary Power Supply, EV Charging On-Board Charger (PFC + LLC front-end), ATX / Server SMPS Primary Switch.
Power Factor Correction (PFC) Boost Stage
The IPD60R600C6 fits 600 V-class PFC boost stages in 230 V AC offline SMPS because its 600 V V DSS provides margin above the 325 V rectified peak and the 600 mOhm R DS(on) keeps conduction loss manageable at 3-5 A average inductor current. Placed in continuous-conduction-mode boost topology between the rectifier bridge and the DC bus capacitor, the CoolMOS C6 Figure-of-Merit (R DS(on) * Q G) reduces 100 kHz switching loss versus planar 600 V MOSFETs of equivalent rating. Designers should use a 10-15 V gate drive and minimize the drain-to-bus-capacitor loop inductance to fully exploit the fast switching edge rates. Recommended companion parts include the UCC28180 PFC controller (TI) and the Si8261 gate driver (Skyworks / Silabs).
Empfohlen
LLC Half-Bridge Primary Switch
In LLC resonant half-bridge converters targeting 200-500 W output, the IPD60R600C6 serves as the primary-side high-side or low-side switch because its superjunction structure handles the body-diode reverse-recovery behavior required by the resonant tank. The 600 mOhm R DS(on) is acceptable in this topology because conduction loss is shared across both halves of the bridge and the duty cycle is near 50%. Best results come from pairing with an LLC controller such as the UCC25640x family and ensuring dead-time is below 300 ns to avoid body-diode conduction losses. The PG-TO252-3 footprint allows compact adapter designs without a through-hole TO-220.
Empfohlen
Solar Micro-Inverter / String Inverter
The IPD60R600C6 is well-matched to single-stage or two-stage solar micro-inverters because its 600 V rating covers the DC-link voltage derived from a 600 V PV string open-circuit and the 7.3 A continuous current supports 500-800 W micro-inverter power levels. Compared to IGBTs at the same voltage, the CoolMOS C6 cuts switching loss by roughly 50 percent at 20-50 kHz PWM, raising CEC-weighted efficiency above 96 percent. Designers should pair the MOSFET with reinforced isolation in the gate-drive path and add a TVS across the drain-source to absorb transformer leakage spike energy.
Empfohlen
HID Lamp Ballast and LED Driver
HID lamp ballasts and high-power LED drivers use the IPD60R600C6 as the main switching element in buck-boost or flyback topologies driving 100-400 V DC lamp bus voltages. Its fast switching edge rates enable inductor and transformer size reduction at 50-100 kHz, while the 600 mOhm R DS(on) keeps conduction loss acceptable at 2-4 A RMS continuous current. The PG-TO252-3 DPAK footprint simplifies the mechanical integration inside the ballast housing compared to TO-220. Recommended companion parts include the IRS25752D LED driver IC and the UCC23025 HID controller.
Empfohlen
Industrial Auxiliary Power Supply
Industrial 24 V and 48 V auxiliary supplies rated 50-150 W commonly use the IPD60R600C6 on the primary side of a flyback or forward converter because its 600 V rating tolerates wide-input 85-305 V AC rectified rails with comfortable transient margin. The CoolMOS C6 low Q G allows simple single-supply 12-15 V gate drive from an auxiliary winding, eliminating the need for a costly gate-drive bootstrap in some topologies. Compared to a 600 V planar MOSFET, the IPD60R600C6 reduces switching loss by 30-50 percent at 65-100 kHz, allowing a smaller heatsink or higher power density. Pair with an InnoSwitch or TinySwitch controller for primary-side regulation.
Empfohlen
EV Charging On-Board Charger (PFC + LLC front-end)
On-board chargers for electric vehicles in the 3.3-7.4 kW range use a two-stage architecture where the IPD60R600C6 handles the 600 V-class PFC boost at the AC mains input. Its 7.3 A continuous rating supports up to 2-3 kW per switch when paralleled, and the CoolMOS C6 Figure-of-Merit enables 100+ kHz switching to shrink the PFC inductor. In the LLC primary half-bridge, two IPD60R600C6 share current and reduce total conduction loss versus a single larger device. AEC-Q101 grade is not directly available for this part number, so vehicle-mounted designs must rely on the supplier's automotive-grade screening path or choose an alternative IPD60R600C6 variant.
Empfohlen
ATX / Server SMPS Primary Switch
Silver-box ATX and CRPS server power supplies use the IPD60R600C6 as the main primary switch in 80 Plus Platinum / Gold targeted designs where 600 V superjunction MOSFETs replace older planar parts. Its low R DS(on) and fast body-diode recovery allow 100-150 kHz switching on the PFC stage and 150-300 kHz on the LLC primary, helping meet 80 Plus Titanium efficiency points at 50 percent load. The PG-TO252-3 footprint enables a more compact heatsink layout than TO-220, supporting 1U server form factors.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPD60R600C6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPD60R600CP | IPD60R1K4C6 | IPD60R2K0C6 | IPD60R380C6 | STF13N60M2 | FCPF600N60Z |
|---|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | TO-252 (DPAK equivalent) | TO-252 (DPAK equivalent) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| V DSS (V) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| R DS(on) max (Ohm) at V GS = 10 V | 0.600 Ohm | 0.600 Ohm | 1.4 Ohm | 2.0 Ohm | 0.380 Ohm | 0.380 Ohm | 0.600 Ohm |
| Continuous I D at T C = 25 C (A) | 7.3 A | 7.3 A | 4.3 A | 3.0 A | 10 A | 13 A | 10 A |
| Technology Family | CoolMOS C6 (superjunction) | CoolMOS CP | CoolMOS C6 | CoolMOS C6 | CoolMOS C6 | MDmesh M2 | SuperFET III |
| P D max (W) at T C = 25 C | 63 W | 63 W | 42 W | 34 W | 83 W | 110 W | 83 W |
Wichtigste Unterscheidungsmerkmale
- Superjunction technology with 600 V / 600 mOhm in DPAK (vs. STD12N65M2)
- Same PG-TO252-3 footprint as the higher-current IPD60R380C6 (vs. IPD60R380C6)
- CoolMOS C6 ease-of-use versus planar 600 V MOSFETs (vs. STF13N60M2)
- Lower Figure-of-Merit (R DS(on) * Q G) than older CoolMOS C3 (vs. IPP60R600C6 (TO-220))
Designhinweise
Minimize the drain-to-bus-capacitor power loop inductance by keeping the drain tab, bus capacitor, and low-side source return on the same PCB layer with short, wide copper pours. The IPD60R600C6 switches in 20-50 ns and a stray inductance above 30 nH will produce drain-source overshoot exceeding the 600 V rating during turn-off. Estimated: with 0.4 nH/mm trace inductance and a 10 mm loop length, L_loop ~ 4 nH; combined with 7.3 A turn-off di/dt of 1 A/ns, V_spike ~ 4 V - well within margin. A 5-10 Ohm gate resistor typically damps the ringing to < 10 percent overshoot.
The PG-TO252-3 (DPAK) package relies almost entirely on the PCB copper pour for heatsinking because R theta_JC is typically 1.5 C/W but R theta_JA with a minimum 1 square inch copper pad is around 50 C/W. Estimated: at 1 A continuous and 0.6 Ohm R DS(on), conduction loss = 0.36 W; junction rise above ambient ~ 18 C - acceptable. At 7.3 A full load the loss is 19 W and the junction would rise 950 C above ambient, which is impossible, so the practical continuous current must be derated to roughly 2.5 A without an external heatsink.
Do not drive the IPD60R600C6 with a gate voltage below 10 V - at V GS = 7 V the R DS(on) is roughly 2-3x higher than the datasheet spec and conduction loss spikes. Avoid paralleling IPD60R600C6 devices without matched gate resistors (5-10 Ohm each) and Kelvin source connection, or dynamic current sharing will cause one device to overheat. Finally, do not skip the TVS clamp across the drain-source of an LLC or flyback primary - leakage inductance spikes can punch through the 600 V rating despite the rating headroom.
Solder the exposed tab of the PG-TO252-3 to a copper pad of at least 100 mm^2 (roughly 1 square inch) on the top layer to achieve the rated thermal performance. Use thermal vias (0.3 mm drill, 0.5 mm pitch, 4-6 vias) to spread heat into the inner copper plane. Keep the gate-trace impedance low and away from drain dV/dt edges to avoid Miller-effect induced turn-on; route the gate return directly to the source pin (Pin 3), not to the PCB ground copper, to avoid ground bounce.
Compliance-Informationen
RoHS compliant per Infineon product page; not AEC-Q100 qualified - for automotive OBC designs use an AEC-Q101 qualified alternative. Halogen-free per Infineon green product marking.
