IPD60R600C6 vs IPD60R380C6ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R600C6 von Infineon und IPD60R380C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R600C6 IPD60R380C6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,42 $0,41
Manufacturer Infineon Technologies —
Series CoolMOS C6 —
FET Type N-Channel N-Channel
Technology Superjunction (CoolMOS) CoolMOS C6 Superjunction
Drain-to-Source Voltage (V DSS) 600 V —
Continuous Drain Current (I D) at T C = 25 C 7.3 A —
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V 600 mOhm —
Maximum Power Dissipation (P D) at T C = 25 C 63 W —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical and minimum] —
Gate Charge (Q G) typical [DATA_NEEDED: Q G value] —
Betriebs-Sperrschichttemperatur -55 C to +150 C —
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level 1 [DATA_NEEDED: MSL level]
RoHS-Status Compliant Compliant
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
Drain-Tab Connection — Exposed pad (electrically connected to drain)

Datenblätter & Ressourcen

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