ISO5851DWR - 5.7kVrms 2.5A/5A Isolated Gate Driver SOIC-16 | TI
Teilenummer: ISO5851DWR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.37 | $2,37 |
| 10 | $2.18 | $21,80 |
| 100 | $1.92 | $192,00 |
| 500 | $1.71 | $855,00 |
| 1.000 | $1.55 | $1.550,00 |
ISO5851DWR Übersicht
An isolated gate driver is a specialized interface IC that conveys low-voltage PWM control signals across a safety isolation barrier while providing the high peak current and rail-shift needed to rapidly charge and discharge a power-transistor gate. In the broader system hierarchy, the ISO5851DWR sits between the digital controller (MCU/DSP) and the half-bridge or push-pull power stage, providing galvanic isolation that meets reinforced-insulation standards required for industrial motor drives, solar inverters, and onboard EV chargers. Without such isolation, the MCU would be exposed to destructive high-voltage transients during switching.
Key features of the ISO5851DWR include 100 kV/µs minimum common-mode transient immunity (CMTI), split output (OUTH and OUTL) for independent source/sink control, and active safety features such as DESAT short-circuit detection, soft-shutdown on fault, and UVLO on both input and output supplies. The device also integrates an active Miller clamp and a fault-ready (FLT) open-drain feedback line. These features collectively protect expensive IGBT modules during short-circuit events that last microseconds, where unclamped desaturation can destroy the switch within tens of microseconds.
Architecturally, the ISO5851DWR uses TI's proprietary capacitive isolation technology with an ON/OFF keying (OOK) modulator and differential signaling across the isolation barrier, achieving >40-year projected insulation life at 800 V working voltage per VDE 0884-11. The wide-body 16-SOIC (DW) package provides >8 mm creepage and clearance, meeting reinforced-insulation requirements for 800 V AC systems and supporting IEC 61800-5-1 motor-drive standards.
Typical applications include AC and servo motor drives, solar string and central inverters, industrial UPS systems, HEV/EV traction inverters, and welding power supplies. The 5 A sink capability is well-matched to high-current IGBT modules from 50 A to 600 A class. When designing with this device, place a 1 µF X7R bypass capacitor close to the VCC pin and a 10 µF bulk capacitor on VDD, with the bootstrap diode sized for the switching frequency. DESAT pin RC network should be tuned to mask turn-off transients while detecting real desaturation events within 2-3 µs.
Drop-in-Alternativen für ISO5851DWR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ISO5851DWR-Q1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ISO5851DW
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ISO5852SDWR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ISO5851DWR Grenzwerte & elektrische Eigenschaften
| Isolation Technology | Capacitive (galvanic) coupling |
| Isolation Voltage (RMS) | 5700 Vrms (reinforced) |
| Common-Mode Transient Immunity (CMTI) | 100 kV/us minimum |
| Peak Source Current | 2.5 A |
| Peak Sink Current | 5 A |
| Input Supply Voltage (VCC) | 3 V to 5.5 V |
| Output Supply Voltage (VDD) | Up to 25 V |
| Number of Channels | 1 |
| Propagation Delay (typical) | 76 ns |
| Package Type | 16-pin SOIC (DW) wide-body |
| Betriebstemperaturbereich | -40 C to +125 C |
| Maximum Power Dissipation | 700 mW |
| Montageart | Surface Mount |
| MSL-Level | 2 (1 year) |
| Safety Features | DESAT detection, soft shutdown, UVLO, active Miller clamp |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
ISO5851DWR Pin-Konfiguration
| Pin 1 | VCC1 — Input-side supply voltage (3 V to 5.5 V) |
| Pin 2 | IN+ — Non-inverting PWM input |
| Pin 3 | IN- — Inverting PWM input |
| Pin 4 | GND1 — Input-side ground |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | FLT — Active-low fault output (open-drain) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | GND1 — Input-side ground (continued) |
| Pin 9 | GND2 — Output-side ground (VEE for negative supply) |
| Pin 10 | DESAT — Desaturation detection input |
| Pin 11 | OUTL — Low-side gate drive output (sink) |
| Pin 12 | OUTH — High-side gate drive output (source) |
| Pin 13 | VDD — Output-side positive supply (up to 25 V) |
| Pin 14 | CLAMP — Active Miller clamp output |
| Pin 15 | VEE — Output-side negative supply (or GND for unipolar) |
| Pin 16 | NC — Not connected (per datasheet) |
Typische Anwendungen
ISO5851DWR ist geeignet für 6 Anwendungs: Industrial AC Motor Drives (VFDs), Solar String Inverters, EV Traction Inverters (Automotive), Industrial UPS and Energy Storage, Industrial Welding Power Supplies, Server / Telecom Power Supplies.
Industrial AC Motor Drives (VFDs)
The ISO5851DWR's 5700 Vrms reinforced isolation, 100 kV/us CMTI, and DESAT short-circuit protection make it ideal for driving 600 V/1200 V IGBT modules in industrial variable-frequency drives (VFDs) controlling three-phase induction and permanent-magnet motors. In a 7.5 kW to 75 kW drive, three ISO5851DWRs drive the upper IGBTs of the three-phase bridge while the lower IGBTs share a bootstrap supply reference; the 5 A sink capability supports 50-300 A IGBT modules with switching frequencies up to 20 kHz. Unlike optocoupler-based drivers, the capacitive isolation eliminates CTR degradation over time, providing >40-year insulation life and reducing field failures. The wide-body 16-SOIC package delivers >8 mm creepage meeting IEC 61800-5-1 motor-drive standards.
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Solar String Inverters
In 1500 V DC solar string inverters (10 kW to 100 kW), the ISO5851DWR drives IGBT modules in the DC-DC boost stage and the H-bridge inverter converting PV panel output to grid-tie AC. The 5700 Vrms isolation comfortably handles 1500 V DC working voltage with margin, while 100 kV/us CMTI maintains gate signal integrity through dV/dt events at the IGBT switching node. The DESAT detection is critical because short-circuit currents from PV arrays can exceed IGBT ratings within 5-8 µs. Six ISO5851DWRs typically drive a three-phase IGBT inverter; the wide-body SOIC-16 package enables compact gate-driver board layouts that fit within the inverter's IPM-style power module footprint.
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EV Traction Inverters (Automotive)
For electric vehicle traction inverters (100 kW to 250 kW), the ISO5851DWR-Q1 (AEC-Q100 qualified variant) drives 750 V/1200 V SiC MOSFET or IGBT power modules connecting the battery to the drive motor. The driver's 76 ns propagation delay and 5 A sink current enable high-frequency switching (50-100 kHz for SiC) that maximizes inverter efficiency by 1-2%, directly extending EV range. The DESAT-based short-circuit protection is mandatory because SiC MOSFETs fail in <3 µs under short-circuit, far faster than silicon IGBTs. Six ISO5851DWR-Q1s drive the three-phase bridge, with reinforced isolation meeting IEC 60664-1 for automotive high-voltage systems.
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Industrial UPS and Energy Storage
Uninterruptible power supplies (UPS) and battery energy storage systems (BESS) for data centers and grid-tie applications use the ISO5851DWR to drive IGBTs in the bidirectional inverter stage converting between DC battery buses (384 V to 800 V) and 480 V three-phase AC. The 5700 Vrms reinforced isolation is essential because the battery side is referenced to a different ground than the AC output, and any insulation failure would create a safety hazard. The driver's wide-body SOIC package supports the >8 mm creepage required for 800 V DC battery systems per IEC 61800-5-1. Six devices typically implement a full three-phase inverter with redundant driver ICs in fault-tolerant configurations.
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Industrial Welding Power Supplies
Welding inverters use the ISO5851DWR to drive high-current IGBT modules in arc-strike and welding-current control loops. The 100 kV/us CMTI rating is critical because welding arcs generate severe dV/dt transients that would corrupt lower-rated gate drivers. The DESAT short-circuit detection protects IGBTs when the welding electrode shorts to the workpiece, an event that occurs hundreds of times per minute in robotic welding. Two ISO5851DWRs typically drive a full H-bridge topology operating at 20-50 kHz, with the wide-body 16-SOIC package fitting the compact inverter module form factors used in portable welding equipment.
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Server / Telecom Power Supplies
In 48 V input, 380 V output telecom rectifier modules and 800 V high-voltage DC (HVDC) data-center power systems, the ISO5851DWR drives 1200 V SiC MOSFETs or IGBTs in the totem-pole bridgeless PFC and full-bridge LLC stages. The 76 ns propagation delay and 5 A sink current support 100 kHz+ switching frequencies that achieve >98% efficiency required for hyperscale data centers. The driver's reinforced 5700 Vrms isolation provides the safety barrier between the 48 V primary side and 380 V secondary, meeting IEC 62368-1 ICT equipment safety standards. Multiple ISO5851DWRs share a common isolated power supply through individual bootstrap circuits, simplifying the gate-driver layout.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ISO5851DWR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ISO5851DWR-Q1 | ISO5851DW | ISO5852SDWR |
|---|---|---|---|---|
| Package | 16-SOIC (DW) wide-body | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Isolation Voltage | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Peak Source Current | 2.5 A | 2.5 A | 2.5 A | 5.0 A (+100%) |
| Peak Sink Current | 5 A | 5 A | 5 A | 5.0 A (same) |
| CMTI | 100 kV/us | 100 kV/us | 100 kV/us | 100 kV/us |
| AEC-Q100 Automotive | No | Yes | No | No |
| DESAT Protection | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Higher source current for faster turn-on (vs. ISO5852SDWR)
- Same silicon, AEC-Q100 automotive qualification (vs. ISO5851DWR-Q1)
- Reinforced 5700 Vrms isolation with wide-body SOIC (vs. Optocoupler-based drivers (e.g., HCPL-3120))
Designhinweise
Place a 1 uF X7R ceramic bypass capacitor within 2 mm of VCC1 (pin 1) and a 10 uF bulk capacitor on VDD (pin 13) to handle the 5 A peak sink transient currents. Use a low-ESR ceramic or film capacitor for VDD to minimize voltage ringing during IGBT turn-off. The bootstrap diode (when driving high-side) should be a fast-recovery type (trr < 100 ns) rated for at least 2x the bus voltage. Estimated: at 20 kHz switching with 1.5 uF bootstrap cap and 100 nC Qg, the bootstrap voltage droop is approximately 0.5 V per cycle.
Maintain >8 mm creepage distance between primary and secondary sides of the 16-SOIC (DW) package to meet IEC 60664-1 reinforced insulation requirements. Route the DESAT trace directly to the IGBT collector with minimal loop area to avoid false DESAT trips from dV/dt coupling. Place a 100 ohm gate resistor close to OUTL/OUTH pins to dampen parasitic ringing; use a separate gate resistor for source and sink paths if asymmetric turn-on/off is desired.
Do not exceed 25 V on VDD as the absolute maximum; typical operating point is 15 V for IGBTs or 18-20 V for SiC MOSFETs. Ensure the FLT pin pull-up resistor connects to the input-side VCC1, not VDD, to maintain fault reporting during output-side UVLO. The DESAT pin requires a blanking capacitor (typically 100 pF to 1 nF) and a current-limiting resistor (1 kohm) to mask turn-off transients; values depend on IGBT module characteristics and switching frequency.
Estimated: at 20 kHz switching with 100 nC Qg, gate-drive losses are approximately 20 mW per channel, negligible compared to the 700 mW absolute maximum. However, if the ISO5851DWR is used at high ambient temperatures (>100 C) or in a sealed enclosure, the thermal resistance of the SOIC-16 package (~75 C/W) limits dissipation. Provide thermal vias beneath the exposed pad area (if available) or use copper pours on both sides of the PCB to enhance heat spreading.
Compliance-Informationen
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified (choose ISO5851DWR-Q1 for automotive). VDE 0884-11 and UL 1577 reinforced insulation certified per TI datasheet Rev. C.
