ISO5851DWR - 5.7kVrms 2.5A/5A Isolated Gate Driver SOIC-16 | TI
部品番号: ISO5851DWR ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.37 | $2.37 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.71 | $855.00 |
| 1,000 | $1.55 | $1,550.00 |
ISO5851DWR 概要
An isolated gate driver is a specialized interface IC that conveys low-voltage PWM control signals across a safety isolation barrier while providing the high peak current and rail-shift needed to rapidly charge and discharge a power-transistor gate. In the broader system hierarchy, the ISO5851DWR sits between the digital controller (MCU/DSP) and the half-bridge or push-pull power stage, providing galvanic isolation that meets reinforced-insulation standards required for industrial motor drives, solar inverters, and onboard EV chargers. Without such isolation, the MCU would be exposed to destructive high-voltage transients during switching.
Key features of the ISO5851DWR include 100 kV/µs minimum common-mode transient immunity (CMTI), split output (OUTH and OUTL) for independent source/sink control, and active safety features such as DESAT short-circuit detection, soft-shutdown on fault, and UVLO on both input and output supplies. The device also integrates an active Miller clamp and a fault-ready (FLT) open-drain feedback line. These features collectively protect expensive IGBT modules during short-circuit events that last microseconds, where unclamped desaturation can destroy the switch within tens of microseconds.
Architecturally, the ISO5851DWR uses TI's proprietary capacitive isolation technology with an ON/OFF keying (OOK) modulator and differential signaling across the isolation barrier, achieving >40-year projected insulation life at 800 V working voltage per VDE 0884-11. The wide-body 16-SOIC (DW) package provides >8 mm creepage and clearance, meeting reinforced-insulation requirements for 800 V AC systems and supporting IEC 61800-5-1 motor-drive standards.
Typical applications include AC and servo motor drives, solar string and central inverters, industrial UPS systems, HEV/EV traction inverters, and welding power supplies. The 5 A sink capability is well-matched to high-current IGBT modules from 50 A to 600 A class. When designing with this device, place a 1 µF X7R bypass capacitor close to the VCC pin and a 10 µF bulk capacitor on VDD, with the bootstrap diode sized for the switching frequency. DESAT pin RC network should be tuned to mask turn-off transients while detecting real desaturation events within 2-3 µs.
ドロップイン代替品: ISO5851DWR — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
ISO5851DWR-Q1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ISO5851DW
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ISO5852SDWR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ISO5851DWR 最大定格＆電気的特性
| Isolation Technology | Capacitive (galvanic) coupling |
| Isolation Voltage (RMS) | 5700 Vrms (reinforced) |
| Common-Mode Transient Immunity (CMTI) | 100 kV/us minimum |
| Peak Source Current | 2.5 A |
| Peak Sink Current | 5 A |
| Input Supply Voltage (VCC) | 3 V to 5.5 V |
| Output Supply Voltage (VDD) | Up to 25 V |
| Number of Channels | 1 |
| Propagation Delay (typical) | 76 ns |
| Package Type | 16-pin SOIC (DW) wide-body |
| 動作温度範囲 | -40 C to +125 C |
| Maximum Power Dissipation | 700 mW |
| 実装タイプ | Surface Mount |
| MSLレベル | 2 (1 year) |
| Safety Features | DESAT detection, soft shutdown, UVLO, active Miller clamp |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
ISO5851DWR ピン構成
| ピン 1 | VCC1 — Input-side supply voltage (3 V to 5.5 V) |
| ピン 2 | IN+ — Non-inverting PWM input |
| ピン 3 | IN- — Inverting PWM input |
| ピン 4 | GND1 — Input-side ground |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | FLT — Active-low fault output (open-drain) |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | GND1 — Input-side ground (continued) |
| ピン 9 | GND2 — Output-side ground (VEE for negative supply) |
| ピン 10 | DESAT — Desaturation detection input |
| ピン 11 | OUTL — Low-side gate drive output (sink) |
| ピン 12 | OUTH — High-side gate drive output (source) |
| ピン 13 | VDD — Output-side positive supply (up to 25 V) |
| ピン 14 | CLAMP — Active Miller clamp output |
| ピン 15 | VEE — Output-side negative supply (or GND for unipolar) |
| ピン 16 | NC — Not connected (per datasheet) |
主な用途
ISO5851DWR の用途: 6 件s: Industrial AC Motor Drives (VFDs), Solar String Inverters, EV Traction Inverters (Automotive), Industrial UPS and Energy Storage, Industrial Welding Power Supplies, Server / Telecom Power Supplies.
Industrial AC Motor Drives (VFDs)
The ISO5851DWR's 5700 Vrms reinforced isolation, 100 kV/us CMTI, and DESAT short-circuit protection make it ideal for driving 600 V/1200 V IGBT modules in industrial variable-frequency drives (VFDs) controlling three-phase induction and permanent-magnet motors. In a 7.5 kW to 75 kW drive, three ISO5851DWRs drive the upper IGBTs of the three-phase bridge while the lower IGBTs share a bootstrap supply reference; the 5 A sink capability supports 50-300 A IGBT modules with switching frequencies up to 20 kHz. Unlike optocoupler-based drivers, the capacitive isolation eliminates CTR degradation over time, providing >40-year insulation life and reducing field failures. The wide-body 16-SOIC package delivers >8 mm creepage meeting IEC 61800-5-1 motor-drive standards.
おすすめ
Solar String Inverters
In 1500 V DC solar string inverters (10 kW to 100 kW), the ISO5851DWR drives IGBT modules in the DC-DC boost stage and the H-bridge inverter converting PV panel output to grid-tie AC. The 5700 Vrms isolation comfortably handles 1500 V DC working voltage with margin, while 100 kV/us CMTI maintains gate signal integrity through dV/dt events at the IGBT switching node. The DESAT detection is critical because short-circuit currents from PV arrays can exceed IGBT ratings within 5-8 µs. Six ISO5851DWRs typically drive a three-phase IGBT inverter; the wide-body SOIC-16 package enables compact gate-driver board layouts that fit within the inverter's IPM-style power module footprint.
おすすめ
EV Traction Inverters (Automotive)
For electric vehicle traction inverters (100 kW to 250 kW), the ISO5851DWR-Q1 (AEC-Q100 qualified variant) drives 750 V/1200 V SiC MOSFET or IGBT power modules connecting the battery to the drive motor. The driver's 76 ns propagation delay and 5 A sink current enable high-frequency switching (50-100 kHz for SiC) that maximizes inverter efficiency by 1-2%, directly extending EV range. The DESAT-based short-circuit protection is mandatory because SiC MOSFETs fail in <3 µs under short-circuit, far faster than silicon IGBTs. Six ISO5851DWR-Q1s drive the three-phase bridge, with reinforced isolation meeting IEC 60664-1 for automotive high-voltage systems.
おすすめ
Industrial UPS and Energy Storage
Uninterruptible power supplies (UPS) and battery energy storage systems (BESS) for data centers and grid-tie applications use the ISO5851DWR to drive IGBTs in the bidirectional inverter stage converting between DC battery buses (384 V to 800 V) and 480 V three-phase AC. The 5700 Vrms reinforced isolation is essential because the battery side is referenced to a different ground than the AC output, and any insulation failure would create a safety hazard. The driver's wide-body SOIC package supports the >8 mm creepage required for 800 V DC battery systems per IEC 61800-5-1. Six devices typically implement a full three-phase inverter with redundant driver ICs in fault-tolerant configurations.
おすすめ
Industrial Welding Power Supplies
Welding inverters use the ISO5851DWR to drive high-current IGBT modules in arc-strike and welding-current control loops. The 100 kV/us CMTI rating is critical because welding arcs generate severe dV/dt transients that would corrupt lower-rated gate drivers. The DESAT short-circuit detection protects IGBTs when the welding electrode shorts to the workpiece, an event that occurs hundreds of times per minute in robotic welding. Two ISO5851DWRs typically drive a full H-bridge topology operating at 20-50 kHz, with the wide-body 16-SOIC package fitting the compact inverter module form factors used in portable welding equipment.
おすすめ
Server / Telecom Power Supplies
In 48 V input, 380 V output telecom rectifier modules and 800 V high-voltage DC (HVDC) data-center power systems, the ISO5851DWR drives 1200 V SiC MOSFETs or IGBTs in the totem-pole bridgeless PFC and full-bridge LLC stages. The 76 ns propagation delay and 5 A sink current support 100 kHz+ switching frequencies that achieve >98% efficiency required for hyperscale data centers. The driver's reinforced 5700 Vrms isolation provides the safety barrier between the 48 V primary side and 380 V secondary, meeting IEC 62368-1 ICT equipment safety standards. Multiple ISO5851DWRs share a common isolated power supply through individual bootstrap circuits, simplifying the gate-driver layout.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISO5851DWR — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ISO5851DWR-Q1 | ISO5851DW | ISO5852SDWR |
|---|---|---|---|---|
| Package | 16-SOIC (DW) wide-body | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Isolation Voltage | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Peak Source Current | 2.5 A | 2.5 A | 2.5 A | 5.0 A (+100%) |
| Peak Sink Current | 5 A | 5 A | 5 A | 5.0 A (same) |
| CMTI | 100 kV/us | 100 kV/us | 100 kV/us | 100 kV/us |
| AEC-Q100 Automotive | No | Yes | No | No |
| DESAT Protection | Yes | Yes | Yes | Yes |
主な差別化要因
- Higher source current for faster turn-on （vs ISO5852SDWR)
- Same silicon, AEC-Q100 automotive qualification （vs ISO5851DWR-Q1)
- Reinforced 5700 Vrms isolation with wide-body SOIC （vs Optocoupler-based drivers (e.g., HCPL-3120))
設計ノート
Place a 1 uF X7R ceramic bypass capacitor within 2 mm of VCC1 (pin 1) and a 10 uF bulk capacitor on VDD (pin 13) to handle the 5 A peak sink transient currents. Use a low-ESR ceramic or film capacitor for VDD to minimize voltage ringing during IGBT turn-off. The bootstrap diode (when driving high-side) should be a fast-recovery type (trr < 100 ns) rated for at least 2x the bus voltage. Estimated: at 20 kHz switching with 1.5 uF bootstrap cap and 100 nC Qg, the bootstrap voltage droop is approximately 0.5 V per cycle.
Maintain >8 mm creepage distance between primary and secondary sides of the 16-SOIC (DW) package to meet IEC 60664-1 reinforced insulation requirements. Route the DESAT trace directly to the IGBT collector with minimal loop area to avoid false DESAT trips from dV/dt coupling. Place a 100 ohm gate resistor close to OUTL/OUTH pins to dampen parasitic ringing; use a separate gate resistor for source and sink paths if asymmetric turn-on/off is desired.
Do not exceed 25 V on VDD as the absolute maximum; typical operating point is 15 V for IGBTs or 18-20 V for SiC MOSFETs. Ensure the FLT pin pull-up resistor connects to the input-side VCC1, not VDD, to maintain fault reporting during output-side UVLO. The DESAT pin requires a blanking capacitor (typically 100 pF to 1 nF) and a current-limiting resistor (1 kohm) to mask turn-off transients; values depend on IGBT module characteristics and switching frequency.
Estimated: at 20 kHz switching with 100 nC Qg, gate-drive losses are approximately 20 mW per channel, negligible compared to the 700 mW absolute maximum. However, if the ISO5851DWR is used at high ambient temperatures (>100 C) or in a sealed enclosure, the thermal resistance of the SOIC-16 package (~75 C/W) limits dissipation. Provide thermal vias beneath the exposed pad area (if available) or use copper pours on both sides of the PCB to enhance heat spreading.
コンプライアンス情報
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified (choose ISO5851DWR-Q1 for automotive). VDE 0884-11 and UL 1577 reinforced insulation certified per TI datasheet Rev. C.
