Die Speicherpreise ändern sich täglich – die Preise auf der Website können hinter dem Markt zurückbleiben. Bitte senden Sie eine RFQ für das aktuellste Angebot.
Aktuellen Preis anfragen →
Micron Technology

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

Teilenummer: M29W400FT55N3E ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
2.7 V to 3.6 V (program, erase and read) Vdss 48-TSOP I Package Flash - NOR Memory IC Memory
Ab $2.8 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-09-01
Mengenpreise
Menge Stückpreis Gesamt
1 $4.2 $4,20
10 $3.85 $38,50
100 $3.45 $345,00
500 $3.1 $1.550,00
1.000 $2.8 $2.800,00
ℹ️ Alle Preise sind in USD

M29W400FT55N3E Übersicht

The Micron Technology M29W400FT55N3E is a 4Mbit parallel NOR Flash memory IC with a 55 ns access time, operating from a 2.7 V to 3.6 V supply, housed in a 48-pin TSOP I (TSSOP rectangular) surface-mount package.

Parallel NOR Flash is a nonvolatile memory technology that provides random, byte-addressable read access over a parallel address and data bus, making it a subset of the broader Flash memory and semiconductor memory hierarchy. Unlike serial NOR (SPI) devices, parallel NOR offers faster access times and direct code execution (XIP) capability, which is why it remains the boot-memory of choice in embedded processors, MCUs, and FPGAs despite the rise of SPI Flash.

Key features of the M29W400FT55N3E include the 55 ns access time for fast code fetch, the wide 2.7 V to 3.6 V operating range covering all common 3 V rails, and an asymmetric sector architecture with sector sizes of 16 KB, 8 KB, 32 KB, and 64 KB that lets designers place boot code, parameters, and data blocks efficiently. Partstack lists the temperature grade as AUTOMOTIVE, and Microchip USA confirms an operating range of -40C to +125C.

Architecturally, the device belongs to Micron's M29W family of 3 V parallel NOR Flash, using a single VCC supply for program, erase, and read operations per the datasheet (VCC = 2.7 V to 3.6 V for program, erase, and read). The FT suffix denotes the top-boot-block version, placing the small boot sectors at the top of the address map, which suits processors that fetch reset vectors from the top of memory.

Typical applications include automotive ECU boot code storage, industrial control firmware, set-top boxes, networking equipment, and embedded systems requiring reliable code storage across -40C to +125C. The automotive temperature grade makes it particularly suited to under-hood and body-electronics modules.

A key design consideration is sector-erase and program timing: parallel NOR erase operations take considerably longer than reads, so firmware should use polling or interrupt status schemes. Confirm the VCC rail stays within 2.7 V to 3.6 V during erase to avoid write errors.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

Drop-in-Alternativen für M29W400FT55N3E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit M29W400FT55N3E (gleiche Bauform und Footprint) – abweichend in Package, Density, Organization, Interface, Memory Type.

Micron Technology
Package: 44-SO (SOP-44)
Density: 4 Mbit (512K x 8)
Memory Type: NOR Flash (Parallel)
Vergleichen mit M29W400FT55N3E →
Micron Technology
Density: 32 Mbit (33554 kbits)
Organization: 2M x 16
Memory Type: NOR Flash
Vergleichen mit M29W400FT55N3E →
Micron Technology
Package: 48-TSOP I, 12 x 20 mm
Density: 4 Mbit (4194 kbits)
Organization: 512K x 8 bit / 256K x 16 bit
Vergleichen mit M29W400FT55N3E →
Micron Technology
Package: 48-pin TSOP I (12 x 20 mm)
Organization: 512K x8 / 256K x16
Interface: Parallel (asynchronous)
Vergleichen mit M29W400FT55N3E →
Micron Technology
Package: 48-TSOP (12 x 20 mm), TSOP I
Density: 8 Mbit (8388608 bits)
Organization: 512K x 16 / 1M x 8
Vergleichen mit M29W400FT55N3E →
Micron Technology
Package: 48-TSOP I (12 x 20 mm, 0.5 mm pitch)
Density: 8 Mbit
Organization: 1M x 8 / 512K x 16
Vergleichen mit M29W400FT55N3E →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

M29W400FB55N3E

✅ Drop-In
Micron Technology
📦 48-TSOP I
NOR Flash (parallel) · 4 Mbit (4194 kbits) · 512K x 8 bit / 256K x 16 bit · 55 ns · 2.7 V to 3.6 V · Parallel, 8-bit/16-bit (BYTE# selectable) · 19 memory blocks, 1 boot block (bottom, FB) · 10 us per byte/word typical

✓ Auf Lager

Preis auf Anfrage

Datenblatt ansehen →

M29W400FB55N3F

✅ Drop-In
Micron Technology
📦 48-TSOP I
NOR Flash · 4 Mbit · 512K x8 / 256K x16 · Parallel (asynchronous) · 55 ns · 2.7 V to 3.6 V · Single 2.7 V to 3.6 V · BYTE# pin

✓ Auf Lager

$2.55 / Stück

Datenblatt ansehen →

M29F400FT55N3E2

✅ Drop-In
Micron Technology
📦 48-TSOP I
NOR Flash (Parallel) · 4 Mbit (512K x 8) · 55 ns · 5 V (single supply) · Parallel · Top boot (FT variant) · 44-SO (SOP-44) · Surface Mount

✓ Auf Lager

$4.15 / Stück

Datenblatt ansehen →

M29F400FB55N3E2

✅ Drop-In
📦 48-TSOP I
Previous M29F generation, bottom boot block; same footprint and 4 Mbit density

📋 Referenzalternative (nicht im Katalog)

M29W320DB70N3E

✅ Drop-In
Micron Technology
📦 48-TSOP I
NOR Flash · 32 Mbit (33554 kbits) · 2M x 16 · 2000 k · 16 bits · 70 ns · 2.7 V to 3.6 V · 12 V (optional)

✓ Auf Lager

$1.95 / Stück

Datenblatt ansehen →

M29W400FT55N3E Grenzwerte & elektrische Eigenschaften

Speichertyp Flash - NOR Memory IC
Speichergröße 4 Mbit
Schnittstelle Parallel
Access Time 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read)
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block)
Boot Block Position Top (FT suffix)
Betriebstemperatur -40C to +125C
Temperature Grade Automotive
Gehäuse 48-TSOP I
Number of Terminals 48
Package Code / Shape TSSOP / Rectangular
Montageart Surface Mount
Feuchtigkeitsempfindlichkeitsgrad (MSL) 3 (168 Hours)
Packaging Tray
Peak Reflow Time 30 s max
Companion Access-Time Grade 55 ns and 70 ns versions available in family

M29W400FT55N3E tssop / rectangular Pinbelegungsleitfaden

Pinbelegung für M29W400FT55N3E (tssop / rectangular-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.

Pinbelegungsdiagramm für M29W400FT55N3E im tssop / rectangular-Gehäuse

Keine detaillierten Pinbelegungsdaten verfügbar für M29W400FT55N3E.

Siehe die Datenblatt für die vollständige Pin-Konfiguration.

Typische Anwendungen

M29W400FT55N3E ist geeignet für 6 Anwendungs: Automotive ECU Boot Code Storage, Industrial Control Firmware Storage, Set-Top Box and Consumer Boot ROM, Networking Equipment Code Storage, Embedded FPGA/MCU Configuration Backup, Medical Device Firmware Storage.

🚗

Automotive ECU Boot Code Storage

The M29W400FT55N3E fits automotive ECU boot storage because its AUTOMOTIVE temperature grade and -40C to +125C operating range cover under-hood and body-control environments, while the 55 ns access time permits zero-wait-state code fetch for many 3.3 V MCUs at boot. The FT top-boot-block layout places the small 8 KB and 16 KB sectors at the top of the map, matching processors whose reset vectors sit at the highest addresses. Program and erase run from the single 2.7 V to 3.6 V rail, eliminating a separate programming supply in the vehicle electrical architecture. A typical design connects the 16-bit data bus directly to the MCU external bus interface with the 64 KB sectors holding calibration code; the trade-off versus SPI flash is a 48-pin footprint, but parallel boot removes serial-clock setup risk during cold-crank voltage dips.

🏭

Industrial Control Firmware Storage

Industrial PLC I/O modules and motor-control boards benefit from the M29W400FT55N3E's -40C to +125C rating and deterministic parallel read timing of 55 ns, which keeps boot code execution timing predictable across factory-floor temperature swings. The asymmetric sector map (16 KB, 8 KB, 32 KB, 64 KB) lets firmware keep parameter blocks in small, quickly-erased 8 KB sectors while application code occupies 64 KB sectors, cutting field-update erase time significantly. Because the device programs and erases from the same 2.7 V to 3.6 V supply as the controller logic, no charge-pump or 12 V programming rail is needed, simplifying the power tree. Designers should implement status-polling firmware for erase completion, as parallel NOR erase latencies far exceed read latency, and reserve one 64 KB sector as a download buffer for in-field firmware upgrades.

📺

Set-Top Box and Consumer Boot ROM

Set-top boxes and consumer media terminals have historically used parallel NOR such as the M29W400FT55N3E for boot ROM because the SoC fetches reset code directly (execute-in-place) over the parallel bus with a 55 ns access time, avoiding the serial-flash boot handshake and its latency. The 4 Mbit capacity is sufficient for bootloaders plus compressed firmware loaders, while the top-boot sectors protect the immutable boot image from overwrites during OTA updates. Operating from the shared 2.7 V to 3.6 V consumer 3.3 V rail keeps the power design trivial; the MSL 3 (168 hours) rating fits standard consumer reflow lines with a 30 s peak reflow time. The trade-off against SPI NOR is board area and cost at low densities, so this part suits platforms with an existing parallel bus and mature firmware.

🌐

Networking Equipment Code Storage

Routers, switches, and line cards use the M29W400FT55N3E to hold the golden boot image that recovers the main firmware after a failed upgrade. The 55 ns access time and parallel interface deliver fast, deterministic early boot, and the -40C to +125C automotive grade adds margin for unventilated telecom racks. The 8 KB and 16 KB sectors are ideal for storing MAC addresses, serial numbers, and board configuration that changes frequently but must survive power loss. Designers typically wire the 16-bit data bus to the network processor with 0402 series termination resistors on the high-speed address lines to control ringing; adding 0.1 uF plus 10 uF ceramic decoupling at each VCC pin keeps the 3.6 V ceiling respected during program bursts drawn by adjacent switching regulators on the same rail.

🔧

Embedded FPGA/MCU Configuration Backup

In systems where an FPGA or MCU loads its bitstream from a parallel memory, the M29W400FT55N3E provides a 4 Mbit nonvolatile store with 55 ns random access that simplifies the loader state machine: no SPI commands, modes, or clocks, just address-driven reads. Its 2.7 V to 3.6 V operation matches the common 3.3 V configuration rail, and the top-boot sectors keep the golden bitstream in protected 16 KB blocks separate from user-updateable regions. Automotive-grade temperature capability (-40C to +125C) extends use into transportation and heavy-equipment controllers. The engineering consideration is sector-erase latency during bitstream updates - firmware should double-buffer into a 64 KB sector and validate checksums before erasing the protected block, ensuring a power interruption never leaves the device without a bootable image.

💊

Medical Device Firmware Storage

Diagnostic and monitoring equipment requires firmware that survives power loss and remains readable across long service lives, making the M29W400FT55N3E's parallel NOR architecture appropriate: byte-addressable 55 ns reads allow the CPU to run integrity checks (CRC over the boot image) quickly at every power-up. The 8 KB small sectors support audit-log and calibration-constant storage with fast single-sector erase cycles, reducing maintenance downtime during recalibration. The wide -40C to +125C range exceeds clinical requirements, providing derating margin that supports reliability demonstrations. Note that its MSL 3 (168 hours) rating must be tracked through contract-manufacturing floor time, and because this is an automotive-graded commercial part, manufacturers should document supplier qualification for their quality files rather than assume medical-specific certification.

What is the M29W400FT55N3E and what are its key specifications?
The M29W400FT55N3E is a Micron Technology 4 Mbit parallel NOR Flash memory IC with a 55 ns access time, 2.7 V to 3.6 V supply range for program, erase, and read, and an asymmetric boot-block sector layout (16 KB, 8 KB, 32 KB, 64 KB sectors). It is packaged in a 48-pin TSOP I surface-mount package and operates from -40C to +125C in an automotive temperature grade. The FT suffix indicates the top-boot-block organization, ideal for processors fetching reset code from the top of the memory map.
What is the operating voltage range of M29W400FT55N3E?
The M29W400FT55N3E operates from a single VCC supply of 2.7 V to 3.6 V, and according to the Micron datasheet this range applies to all three operating modes: program, erase, and read. There is no separate programming voltage pin; the 3 V rail alone performs all flash operations. Designers should ensure the supply stays within this window during erase and program cycles to prevent incomplete writes, and must respect the absolute maximum ratings beyond 3.6 V continuous operation.
What is the difference between M29W400FT55N3E and M29W400FB55N3E?
The difference is the boot-block position: the FT version (M29W400FT55N3E) places the small 8 KB/16 KB boot sectors at the top of the address map, while the FB version (M29W400FB55N3E) places them at the bottom. Both offer identical 4 Mbit density, 55 ns access time, 2.7 V to 3.6 V operation, -40C to +125C range, and 48-TSOP I package. Choose FT for processors whose reset vectors sit at the top of memory, FB for bottom-vector architectures.
What is the best drop-in replacement for M29W400FT55N3E?
The closest same-package drop-in alternatives are Micron family members in the same 48-TSOP I footprint: M29W400FB55N3E and M29W400FB55N3F (bottom boot block - a direct electrical drop-in but with mirrored sector order), and M29F400FT55N3E2 (same top boot block, 4 Mbit, 55 ns, previous M29F generation). For strict software compatibility, keep the FT top-boot organization; for hardware-only drop-in replacement, any 48-TSOP I M29W/M29F 4 Mbit variant fits the same footprint. Always confirm sector-map orientation against your firmware linker script before substituting.
What is the best Infineon (Spansion/AMD) equivalent for M29W400FT55N3E?
Historically, the AMD/Spansion (now Infineon) S29AL008J and AM29LV400B/AM29LV400T series in 48-pin TSOP packages served as cross-brand equivalents for 4 Mbit-class 3 V parallel NOR Flash, with similar 55-70 ns access times and 2.7 V to 3.6 V operation. However, no cross-brand equivalent was verified in the cross-reference data retrieved for this part, so pin-to-pin compatibility must be confirmed against the Infineon datasheet (address/data pin map and BYTE pin) before designing in a substitute. Do not substitute without a schematic-level pin comparison.
Is M29W400FT55N3E suitable for automotive applications?
Yes. Partstack lists the M29W400FT55N3E temperature grade as AUTOMOTIVE, and the device is specified from -40C to +125C, covering under-hood, powertrain, and body-electronics environments. Its parallel NOR architecture supports execute-in-place boot code fetch at 55 ns, which many automotive MCUs require for reset-vector storage. For new automotive designs, also verify AEC-Q100 qualification status and any PPAP requirements with Micron directly, as compliance documentation was not included in the retrieved distributor data.
What package does M29W400FT55N3E use and how many pins does it have?
The M29W400FT55N3E is packaged in a 48-pin TSOP I (Thin Small Outline Package, type I) with a rectangular TSSOP-coded body, per DigiKey and Partstack listing data. The 48-terminal count provides a 16-bit data bus and the parallel address inputs needed for 4 Mbit organization. The surface-mount TSOP I body supports standard reflow soldering with a peak reflow time of 30 s maximum and MSL 3 (168 hours) floor-life handling per AIChipLink specification data.
Where to download the M29W400FT55N3E datasheet PDF?
The M29W400FT55N3E datasheet PDF is available from Micron's official product page at micron.com (navigate to Products > Storage > NOR Flash > Parallel NOR > part catalog, then select M29W400FT55N3E for downloadable datasheets and product specs). A mirrored PDF copy is also hosted at datasheet.iiic.cc. The datasheet confirms the key electrical parameters: VCC = 2.7 V to 3.6 V for program, erase, and read, with 55 ns and 70 ns access-time grades in the family.
How much does M29W400FT55N3E cost and where can I buy it?
Pricing for the M29W400FT55N3E is available through distributors including DigiKey, Mouser-listed brokers, AIChipLink, Veswin, Richard Electronics, and Microchip USA, with stock status varying by distributor. As of 2026-09-02, XAIPART lists indicative pricing from $4.20 (qty 1) down to $2.80 (qty 1000); because this part trades through broker channels, obtain a formal quote for volume pricing. Verify date codes and provenance when buying automotive-grade memory from secondary distributors.
What is the access time of M29W400FT55N3E and why does it matter?
The M29W400FT55N3E has a 55 ns address-to-data access time, the fastest grade in the M29W400 family (a 70 ns version also exists). Access time determines the maximum CPU clock without wait states: a processor reading at 3.3 V with a 55 ns flash can typically run zero-wait-state fetches up to roughly 15-18 MHz bus rates. Faster MCUs need wait states or caching, so the 55 ns grade matters for deterministic boot performance in automotive and industrial code execution.
What is the sector architecture of M29W400FT55N3E?
The M29W400FT55N3E uses an asymmetric boot-block sector organization with sector sizes of 16 KB, 8 KB, 32 KB, and 64 KB, per Partstack specification data, totaling 4 Mbit. Because the FT suffix denotes top boot block, the small 8 KB and 16 KB sectors sit at the top of the address map. This asymmetric layout lets firmware place frequently-erased parameters in small sectors (fast erase) while using large 64 KB sectors for application code, reducing erase latency and wear.
Is M29W400FT55N3E the same as M29F400FT55N3E2?
They are functionally very close but not identical generations. The M29W400FT55N3E is from Micron's newer M29W family with VCC = 2.7 V to 3.6 V for all operations, while the M29F400FT55N3E2 belongs to the earlier M29F 3 V generation; both are 4 Mbit, top-boot-block, 55 ns, 48-TSOP I devices. In most designs the M29F400FT55N3E2 serves as a same-footprint substitute, but program/erase timing margins and status-polling behavior differ slightly, so firmware erase loops should be validated after substitution.
What moisture sensitivity level and reflow profile does M29W400FT55N3E require?
The M29W400FT55N3E is rated MSL 3 (168 hours floor life) with a maximum peak reflow time of 30 seconds, according to AIChipLink specification data. MSL 3 means the parts must be soldered within 168 hours of removal from the moisture-barrier bag, or baked per J-STD handling practice before reflow. Store reels/trays at <10C/60% RH in original packaging, and log cumulative floor time in production to avoid popcorn cracking of the TSOP body during reflow.
When should I choose M29W400FT55N3E over an SPI NOR flash such as MT25QL128?
Choose the M29W400FT55N3E when your host requires parallel, byte-random access with execute-in-place code fetch at 55 ns and no serial-protocol overhead - typical of legacy MCUs, FPGAs with parallel configuration, and automotive boot architectures designed around a 16-bit parallel memory bus. Choose a serial flash like the MT25QL128 for new designs where pin count, board space, and cost dominate, since SPI flash uses 8 pins versus 48. Parallel NOR also simplifies deterministic boot timing because no SPI clock negotiation is needed.
What is the operating temperature range and temperature grade of M29W400FT55N3E?
The M29W400FT55N3E operates from -40C to +125C and is listed by Partstack with the AUTOMOTIVE temperature grade. This range supports automotive under-hood modules, industrial drives, and outdoor networking equipment where ambient temperatures approach 125C. Note that datasheet AC parameters such as the 55 ns access time should be derated across the full temperature range; consult the Micron datasheet AC characteristics tables for worst-case timing at 125C before finalizing bus timing budgets.

Technische Referenzdaten für M29W400FT55N3E – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the M29W400FT55N3E when you need 4 Mbit parallel NOR with top boot sectors, 55 ns code fetch, and an automotive -40C to +125C range in a 48-TSOP I footprint - the classic choice for top-vector automotive ECUs and legacy parallel-boot designs. Choose M29W400FB55N3E/FB55N3F instead if your MCU fetches vectors from the bottom of memory; it is the same silicon footprint with mirrored sector order. Choose M29F400FT55N3E2 as a cost-oriented second source when the older M29F generation's program/erase timing is acceptable and firmware erase loops are validated. Choose M29W320DB70N3E when 4 Mbit is too small - it shares the 48-TSOP I footprint but trades 55 ns speed for 32 Mbit density, requiring 70 ns bus timing and updated sector handling. For new designs with no parallel-bus legacy, evaluate SPI NOR (e.g., MT25QL series) for lower pin count and cost.

Vergleich mit Alternativen

Parameter Dieses Produkt M29W400FB55N3E M29W400FB55N3F M29F400FT55N3E2 M29F400FB55N3E2 M29W320DB70N3E
Package 48-TSOP I 48-TSOP I - same 48-TSOP I - same 48-TSOP I - same 48-TSOP I - same 48-TSOP I - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Density 4 Mbit 4 Mbit 4 Mbit 4 Mbit 4 Mbit 32 Mbit
Access Time 55 ns 55 ns 55 ns 55 ns 55 ns 70 ns
Supply Voltage 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V
Boot Block Position Top (FT) Bottom (FB) Bottom (FB) Top (FT) Bottom (FB) Bottom (DB)

Wichtigste Unterscheidungsmerkmale

  • Top boot-block organization (FT suffix) (vs. M29W400FB55N3E)
  • Fastest access-time grade in family (vs. M29W320DB70N3E)
  • Automotive temperature grade (vs. M29F400FT55N3E2)

Designhinweise

The M29W400FT55N3E uses a single VCC rail of 2.7 V to 3.6 V for program, erase, and read per the Micron datasheet - there is no separate VPP programming pin. Ensure the 3.3 V rail stays above 2.7 V during erase/program bursts; if the rail is shared with switching regulators, add 10 uF bulk plus 0.1 uF ceramic decoupling at the flash. Estimated: a brownout to 2.6 V mid-erase can corrupt the sector, so add a supervisor (e.g., reset IC with ~2.8 V threshold) that gates the write-enable line.

The 55 ns access-time grade supports fast parallel bus fetch, so address-line ringing matters. Estimated: with a 15 MHz zero-wait-state bus, address setup margins are small; keep TSOP-to-CPU traces under ~10 cm and add 22-33 ohm series resistors on address lines if stubs exceed that. Verify worst-case AC timing at +125C by applying datasheet derating, not 25C typical values, especially in automotive enclosures.

Do not confuse boot-block orientation: the FT suffix (this part) places small boot sectors at the TOP of the map; FB variants mirror them to the bottom. Substituting FB for FT on the same PCB is electrically a drop-in (same 48-TSOP I pinout) but firmware linker scripts and vector tables must be remapped or the system will not boot. Also respect MSL 3 (168 hours) floor-life before reflow, with 30 s maximum peak reflow time.

Compliance-Informationen

RoHS
Unknown
REACH
Unknown
AEC-Q100
Unknown
Bleifrei
Unknown
Halogenfrei
Unknown
Konfliktmineralien
Unknown

Partstack lists temperature grade as AUTOMOTIVE, but AEC-Q100 qualification status, RoHS/REACH, and lead-free data were not present in the retrieved web data; verify on Micron's official product page.

Daten verifiziert am: 2026-09-02 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

Ähnliche Suchanfragen

M29W400FT55N3E datasheet M29W400FT55N3E Micron M29W400FT55N3E M29W400FT55N3E 4Mbit NOR flash 55ns M29W400FT55N3E 48-TSOP package M29W400FT55N3E vs M29W400FB55N3E M29W400FT55N3E drop-in replacement M29W400FT55N3E automotive flash price buy M29W400FT55N3E in stock M29W400FT55N3E pinout 48 TSOP parallel NOR flash automotive ECU boot memory M29F400FT55N3E2 equivalent substitute what is the access time of M29W400FT55N3E

Verwandte Bauteile & Begriffe

Micron Technology M29W400FT55N3E M29W400FB55N3E M29F400FT55N3E2 M29W320DB70N3E M29W family parallel NOR flash NOR memory flash memory nonvolatile memory semiconductor memory IC boot block execute-in-place (XIP) 48-TSOP I TSOP TSSOP surface mount RoHS MSL 3 (168 hours) AEC-Q100 automotive temperature grade access time sector erase boot code storage automotive ECU
Schnellangebot-RFQ
Geben Sie alle Details an – unser Vertriebsteam antwortet innerhalb von 24 Stunden
Teilenummer Hersteller Gehäuse QTY Zielpreis Gesamt
Gesamt: $0.00 USD
✓
Angebotsanfrage gesendet!

Wir antworten innerhalb von 24 Stunden auf Ihre E-Mail

1
RFQ gesendet
2
Angebot erhalten
3
Bestellung aufgegeben
4
Zahlung
5
Versandt
6
Geliefert
RFQ-Details ansehen