MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP
Teilenummer: MRF8P23160WHSR3 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $142.5 | $142,50 |
| 10 | $130.2 | $1.302,00 |
| 50 | $118.75 | $5.937,50 |
| 100 | $108.4 | $10.840,00 |
| 250 | $99.1 | $24.775,00 |
MRF8P23160WHSR3 Übersicht
An RF Power MOSFET is a specialized lateral double-diffused (LDMOS) transistor engineered for high-frequency, high-power amplification in wireless base stations. Unlike small-signal MOSFETs, RF power MOSFETs integrate impedance-matching structures, ceramic packaging, and gold metallization to minimize parasitic losses and thermal resistance. MRF8P23160WHSR3 belongs to the HV8 LDMOS family, positioned in the hierarchy: LDMOS -> RF Power MOSFET -> RF Transistor -> Discrete Semiconductor. This device is engineered for Doherty configurations where two amplifiers combine a main and a peaking path to maximize efficiency across modulation peaks.
Key differentiating features include 65 V drain-source breakdown voltage providing wide margin above the 28 V operational rail, 14.1 dB power gain at 2.32 GHz enabling multi-stage amplifier cascades, and a low-thermal-resistance NI-780-4 ceramic package capable of dissipating 160 W peak RF output. The lateral N-channel enhancement-mode design supports wide instantaneous bandwidth across the 2300-2400 MHz band and integrates electrostatic discharge (ESD) protection at the gate.
Architecturally, the device uses a Freescale (now NXP) lateral HV8 LDMOS process, which places source, channel, and drain laterally under the gate. This geometry reduces on-resistance per unit area and provides intrinsic thermal stability for continuous-wave (CW) and pulsed RF operation. The NI-780-4 package features a ceramic body with flat leads designed for surface-mount placement onto a copper flange or thermal spreader.
Typical applications include 4G LTE base station power amplifiers in the 2.3-2.4 GHz TDD/FDD bands, Doherty amplifier final stages for macro-cell transmitters, and W-CDMA driver amplifiers for cellular repeaters. The wide bandwidth also makes the device usable for multi-carrier GSM and TD-LTE amplifier chains. Per the datasheet, single-carrier W-CDMA drive-up at VDD=28V delivers 30 W average output at the rated quiescent current.
Design consideration: When designing a Doherty amplifier with this part, maintain VGS bias near the Class AB region (~600 mA IDQA at VDD=28 V) to balance linearity and efficiency. Ensure the thermal interface between the ceramic body and the heat spreader uses a thin layer of thermal compound to minimize junction-to-case resistance, and verify input/output matching networks are tuned to the specific 2.32 GHz target within the 2300-2400 MHz operating band.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MRF8P23160WHSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF8P23160WHSR3 (gleiche Bauform und Footprint) – abweichend in Frequency Range, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF8P23160WHR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8P23160WHS
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF8P20140WHSR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8P26080HSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$99.85 / Stück
Datenblatt ansehen →MRF8P30000BHSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF8P23080AHSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF8P23160WHSR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
| Transistortyp | N-Channel LDMOS RF Power MOSFET |
| Operating Mode | Enhancement Mode |
| Frequency Range | 2300 to 2400 MHz |
| Test Frequency | 2.32 GHz |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 65 V |
| Test Voltage (VDD) | 28 V |
| Power Gain | 14.1 dB |
| Average Output Power (P1dB / W-CDMA) | 30 W |
| Peak Output Power | 160 W |
| Quiescent Drain Current (IDQA) | 600 mA |
| Package Type | NI-780-4 (CASE 465M-01), ceramic flangeless |
| Number of Terminals | 4 |
| Montagestil | Surface Mount (SMD flat lead) |
| Technology | HV8 Lateral LDMOS |
| Configuration | Single (Doherty-ready) |
| Application | Base Station / Macro Cell Power Amplifier |
| RoHS-Status | Compliant |
MRF8P23160WHSR3 Pin-Konfiguration
| Pin 1 | DRAIN — RF drain / DC supply voltage (VDD) |
| Pin 2 | GATE — RF input / gate bias |
| Pin 3 | SOURCE — RF and DC ground (connected to flange/heat spreader) |
| Pin 4 | NC — Not connected (mechanical support pin) |
DC Sicherer Arbeitsbereich
Typische Anwendungen
MRF8P23160WHSR3 ist geeignet für 6 Anwendungs: 4G LTE Base Station Doherty Power Amplifier, W-CDMA Macro-Cell Driver Amplifier, Cellular Repeater / Booster Power Stage, Multi-Carrier GSM Power Amplifier Chain, TD-LTE Broadcast Amplifier, RF Test Equipment Power Stage.
4G LTE Base Station Doherty Power Amplifier
The MRF8P23160WHSR3 is a direct-fit final-stage device for 2.3-2.4 GHz LTE Band 40/41 macro-cell Doherty power amplifiers. With 14.1 dB gain and 30 W average W-CDMA/LTE output at 28 V VDD, it sits in the main and peaking amplifier paths where a 90-degree offset line combines their outputs for high efficiency under modulated signals. The 65 V V(BR)DSS provides margin above the 28 V operational rail, surviving load-pull excursions during VSWR mismatch events typical of tower-top installations. Its NI-780-4 ceramic package dissipates 160 W peak while keeping junction temperatures within safe limits on a properly attached heat spreader.
Empfohlen
W-CDMA Macro-Cell Driver Amplifier
In a W-CDMA macro-cell transmitter, the MRF8P23160WHSR3 functions as either a high-power driver or as a final-stage LDMOS in single-ended configurations. Its 14.1 dB gain at 2.32 GHz provides sufficient drive for downstream stages while maintaining linearity across the 3.84 Mcps chip rate of W-CDMA. The lateral diffusion architecture yields high intermodulation distortion (IMD) headroom, supporting multi-carrier operation across the 2300-2400 MHz band. Per the datasheet, single-carrier W-CDMA drive-up at VDD=28 V produces 30 W average output with the typical Doherty efficiency curve.
Empfohlen
Cellular Repeater / Booster Power Stage
Cellular repeaters and signal boosters operating in the 2300-2400 MHz TDD band use MRF8P23160WHSR3 as the final RF amplification stage when higher power is needed than a typical integrated front-end module can deliver. The 160 W peak / 30 W average capability supports in-building or outdoor repeaters covering medium-size coverage areas. The enhancement-mode gate is easily biased with a simple negative-temperature-compensation circuit, simplifying the repeater thermal design while maintaining Class AB stability across operating temperatures.
Empfohlen
Multi-Carrier GSM Power Amplifier Chain
The 100 MHz instantaneous bandwidth of MRF8P23160WHSR3 supports multi-carrier GSM base station amplifier chains at 2.3 GHz, where multiple GSM carriers are combined and amplified simultaneously. The 14.1 dB gain enables simplified driver cascade design, and the high V(BR)DSS of 65 V tolerates the elevated peak voltages that arise under multi-carrier excitation. Designers can run the device at lower quiescent current for higher efficiency while still meeting the linearity requirements of multi-carrier GSM with proper digital predistortion (DPD) feedback.
Empfohlen
TD-LTE Broadcast Amplifier
TD-LTE broadcast transmitters in the 2300-2400 MHz band leverage the MRF8P23160WHSR3 as a high-power final amplifier. The LDMOS lateral geometry provides excellent linearity for OFDM-modulated signals with high peak-to-average ratios (PAPR ~10-12 dB). When used with digital predistortion (DPD), the device achieves adjacent-channel leakage ratio (ACLR) performance compatible with 3GPP LTE specifications. Its wide bandwidth simplifies matching network design, reducing the BOM count compared to narrower-band alternatives.
Empfohlen
RF Test Equipment Power Stage
RF test equipment manufacturers use MRF8P23160WHSR3 in amplifier stages of test systems that characterize components in the 2.3-2.4 GHz band. The combination of 160 W peak power, 65 V breakdown, and predictable LDMOS behavior under load-pull conditions makes this device a reliable choice for production test stands. The ceramic NI-780-4 package ensures repeatable thermal performance in continuous-wave test operation, and the surface-mount form factor allows automated assembly of the test fixture.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF8P23160WHSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF8P23160WHR3 | MRF8P20140WHSR3 | MRF8P26080HSR3 | MRF8P30000BHSR3 |
|---|---|---|---|---|---|
| Package | NI-780-4 (CASE 465M-01) | NI-780-4 (CASE 465M-01) - same | NI-780-4 (CASE 465M-01) - same | NI-780-4 (CASE 465M-01) - same | NI-780-4 (CASE 465M-01) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2300-2400 MHz | 2300-2400 MHz | 1930-2025 MHz | 2570-2620 MHz | 2300-2400 MHz |
| Average Output Power | 30 W (W-CDMA) | 30 W | 28 W | 16 W | 60 W |
| Peak Output Power | 160 W | 160 W | 140 W | 80 W | 300 W |
| Power Gain | 14.1 dB | 14.1 dB | 14.0 dB | 15.5 dB | 13.5 dB |
| V(BR)DSS | 65 V | 65 V | 65 V | 65 V | 65 V |
| Test Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Quiescent Current (IDQA) | 600 mA | 600 mA | 550 mA | 400 mA | 700 mA |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Active | Active |
Wichtigste Unterscheidungsmerkmale
- Optimized for 2300-2400 MHz LTE Band 40/41 (vs. MRF8P20140WHSR3)
- Higher peak power in same NI-780-4 footprint (vs. MRF8P26080HSR3)
- Lower power than active MRF8P30000B but established qualification (vs. MRF8P30000BHSR3)
Designhinweise
The MRF8P23160WHSR3 dissipates significant power at full RF output - at 28 V VDD delivering 160 W peak RF, total DC power is approximately 280 W. Estimated: with a junction-to-case thermal resistance of approximately 0.4 C/W (typical NI-780-4 ceramic package), junction-to-heat spreader interface resistance of 0.1 C/W, and heat spreader-to-ambient of 0.3 C/W, total thermal resistance is approximately 0.8 C/W. Use a copper heat spreader with a thin (0.05 mm) layer of thermal compound (3-5 W/mK minimum) to maintain junction below 200 C at full CW operation. Forced-air cooling is required for continuous-duty Doherty operation.
Surface-mount the NI-780-4 package directly onto a copper or aluminum heat spreader integrated into the PCB. Keep RF input/output traces to 50 ohm microstrip or stripline, with the gate and drain impedance matching networks placed within 5 mm of the package leads to minimize parasitic inductance. Use low-loss PCB substrate (Rogers RO4350B or equivalent) with dielectric constant of 3.48 at 2.3 GHz. Provide ample ground vias (8+ per package pin) stitching the top RF ground to the bottom heat-spreader plane.
Place drain bias decoupling (10 uF electrolytic + 100 nF ceramic + 10 nF ceramic) directly at the drain lead. Isolate the gate bias network from RF leakage using a quarter-wave stub or RF choke. Maintain at least 3 mm separation between drain and gate matching networks to minimize feedback that could cause oscillation. For Doherty operation, ensure the combining offset line length matches the electrical delay through the peaking amplifier for proper load modulation across the modulation bandwidth.
Do not exceed the absolute maximum drain-source voltage of 65 V - use a drain bias network with controlled inrush current (gate default-off with slow ramp-up). Do not operate without proper heat sinking - the ceramic NI-780-4 package is not designed for freestanding operation. Avoid operating in Class A (IDQA > 1.5 A) as this reduces efficiency and may exceed thermal limits. Verify input/output matching networks are tuned to the actual operating frequency within the 2300-2400 MHz band, not at 2.0 GHz common-test-band, to avoid efficiency loss at the design frequency.
For Doherty amplifier stability, ensure gate and drain bias networks include ferrite beads or RF chokes to prevent VDD-line resonances that could cause parametric oscillation. Add a small gate resistor (1-10 ohm, depending on frequency) at the gate input to improve low-frequency stability below 100 MHz. For pulsed RF or TDD operation, ensure gate bias can be turned off rapidly (< 1 us) to support TDD switching between uplink and downlink subframes without leaving the device in a high-IDQ state during inactive periods.
Compliance-Informationen
RoHS compliant per NXP/Freescale datasheet MRF8P23160WH Rev. 0 (December 2011). Halogen-free status not explicitly stated in datasheet excerpt. Not AEC-Q100 qualified - this is an RF power transistor for telecom infrastructure, not automotive.
