MRF8P23160WHSR3 vs MRF8P26080HSR3 Vergleich
Detaillierter Direktvergleich von MRF8P23160WHSR3 von NXP Semiconductors und MRF8P26080HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8P23160WHSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Transceivers | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,10 | $99,85 |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | — |
| Transistortyp | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Mode | Enhancement Mode | — |
| Frequency Range | 2300 to 2400 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.32 GHz | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 65 V | — |
| Test Voltage (VDD) | 28 V | — |
| Power Gain | 14.1 dB | — |
| Average Output Power (P1dB / W-CDMA) | 30 W | — |
| Peak Output Power | 160 W | — |
| Quiescent Drain Current (IDQA) | 600 mA | — |
| Package Type | NI-780-4 (CASE 465M-01), ceramic flangeless | — |
| Number of Terminals | 4 | — |
| Montagestil | Surface Mount (SMD flat lead) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Technology | HV8 Lateral LDMOS | Gen8 LDMOS (Silicon, Lateral) |
| Configuration | Single (Doherty-ready) | — |
| Application | Base Station / Macro Cell Power Amplifier | — |
| RoHS-Status | Compliant | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | [DATA_NEEDED: MSL rating] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Gehäuse | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Montageart | — | Through-hole flange-mount with screw attachment |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |