MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron
Teilenummer: MT29F4G08ABADAWP-IT:D ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.66 | $8,66 |
| 10 | $7.92 | $79,20 |
| 100 | $6.85 | $685,00 |
| 500 | $6.1 | $3.050,00 |
| 1.000 | $5.45 | $5.450,00 |
MT29F4G08ABADAWP-IT:D Übersicht
NAND Flash memory is a non-volatile storage technology that retains data without power and uses floating-gate transistors arranged in NAND (series) strings to achieve high density at low cost per bit. SLC (Single-Level Cell) NAND stores one bit per cell, giving it superior endurance (typically 100K P/E cycles), faster write performance, and higher data retention compared to MLC/TLC NAND. Within the memory hierarchy, SLC NAND sits between raw NOR Flash (faster, lower density, byte-erasable) and managed NAND (eMMC/UFS, which integrate a controller). The MT29F4G08A family uses a raw NAND interface requiring an external ECC controller for bad-block management.
Key differentiating specifications include 4-Gbit density in x8 (byte-wide) organization, 25 ns tRC access time, 48-pin TSOP-I footprint with 18.40 mm body width, and an extended industrial operating temperature range of -40C to +85C. The device supports multi-plane operations for higher throughput, and its command set complies with the ONFI 2.1 specification, simplifying host-side firmware development across compatible Micron SLC NAND generations.
Architecturally, the MT29F4G08ABADAWP-IT:D uses a single-die design with two planes, each containing 2048 blocks of 64 pages x 4 KB + spare area. The 8-bit asynchronous interface uses standard NAND control signals (CE#, RE#, WE#, ALE, CLE) plus R/B# for ready/busy status. Internally generated ECC is not provided - the host must perform error correction over each 512-byte or 4 KB sector according to ONFI timing.
Typical applications include industrial routers, automotive infotainment boot/media storage, factory automation data loggers, point-of-sale terminals, set-top box firmware storage, and medical monitoring devices requiring long-term reliability. Designers choose SLC NAND over MLC/TLC when endurance and data integrity outweigh cost-per-bit.
When designing with this device, allocate 1KB to 4KB of host-side ECC engine capacity per page (typically BCH or Reed-Solomon) and reserve ~1% of total blocks for spare-area bad-block replacement. Decoupling capacitors of 0.1 uF plus 4.7 uF should be placed within 5 mm of the VCC and VCCQ pins.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet with engineering-decision context.
Drop-in-Alternativen für MT29F4G08ABADAWP-IT:D – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT29F4G08ABADAWP-IT:D (gleiche Bauform und Footprint) – abweichend in Access Time (tRC), Block Size, Interface, Memory Type, Page Size.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT29F4G08ABAFAWP-IT:F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT29F4G08ABADAWP-ITX:D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT29F64G08CBAAAWP-IT:A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9F4G08U0M
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
W29N04GVSIAA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT29F4G08ABADAWP-IT:D Grenzwerte & elektrische Eigenschaften
| Speichertyp | FLASH - NAND (SLC) |
| Speichergröße | 4 Gbit (512M x 8) |
| Memory Organization | 512M x 8 |
| Schnittstelle | Parallel (byte-wide, x8) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| Access Time (tRC) | 25 ns |
| ONFI Version | ONFI 2.1 |
| Gehäuse / Bauform | 48-TFSOP (0.724", 18.40 mm width) |
| Betriebstemperatur | -40 C to +85 C (Industrial) |
| Page Size | 2048 + 64 bytes (or 4096 + 128 bytes in ONFI 2.1) |
| Block Size | 64 pages x 4 KB |
| Planes per Die | 2 |
| Endurance (P/E Cycles) | 100,000 typical (SLC) |
| Packaging | Tray |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
MT29F4G08ABADAWP-IT:D Pin-Konfiguration
| Pin 1 | NC — Not connected (per datasheet) |
| Pin 2 | NC — Not connected (per datasheet) |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | R/B# — Ready/Busy output (open-drain, active-low) |
| Pin 8 | RE# — Read Enable (active-low) |
| Pin 9 | CE# — Chip Enable (active-low) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | VCC — Power supply (2.7V - 3.6V) |
| Pin 13 | VSS — Ground |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | CLE — Command Latch Enable |
| Pin 17 | ALE — Address Latch Enable |
| Pin 18 | WE# — Write Enable (active-low) |
| Pin 19 | WP# — Write Protect (active-low) |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
| Pin 28 | NC — Not connected (per datasheet) |
| Pin 29 | I/O0 — Data I/O bit 0 |
| Pin 30 | I/O1 — Data I/O bit 1 |
| Pin 31 | I/O2 — Data I/O bit 2 |
| Pin 32 | I/O3 — Data I/O bit 3 |
| Pin 33 | NC — Not connected (per datasheet) |
| Pin 34 | NC — Not connected (per datasheet) |
| Pin 35 | NC — Not connected (per datasheet) |
| Pin 36 | NC — Not connected (per datasheet) |
| Pin 37 | NC — Not connected (per datasheet) |
| Pin 38 | NC — Not connected (per datasheet) |
| Pin 39 | NC — Not connected (per datasheet) |
| Pin 40 | NC — Not connected (per datasheet) |
| Pin 41 | I/O4 — Data I/O bit 4 |
| Pin 42 | I/O5 — Data I/O bit 5 |
| Pin 43 | I/O6 — Data I/O bit 6 |
| Pin 44 | I/O7 — Data I/O bit 7 |
| Pin 45 | NC — Not connected (per datasheet) |
| Pin 46 | NC — Not connected (per datasheet) |
| Pin 47 | NC — Not connected (per datasheet) |
| Pin 48 | NC — Not connected (per datasheet) |
Typische Anwendungen
MT29F4G08ABADAWP-IT:D ist geeignet für 6 Anwendungs: Industrial Router Firmware Storage, Automotive Infotainment Boot and Media Storage, Factory Automation Data Logger, Point-of-Sale Terminal Storage, Set-Top Box Firmware and Channel Database, Medical Patient Monitoring Device Storage.
Industrial Router Firmware Storage
The MT29F4G08ABADAWP-IT:D stores bootloader, OS image, and configuration data in industrial routers and gateways where 4 Gbit capacity, 100K P/E cycle endurance, and -40 to +85 C operation are critical. Its 25 ns access time and ONFI 2.1 command set allow the host CPU to read pages directly during boot without DMA bottlenecks. Pairing with a BCH ECC engine (8-bit correction per 512 bytes) yields bit error rates below 1e-14 across the operating life. The 48-TSOP-I package reflows cleanly on standard ENIG finish, simplifying mid-volume router production.
Empfohlen
Automotive Infotainment Boot and Media Storage
In automotive infotainment head units and instrument clusters, the MT29F4G08ABADAWP-IT:D serves as boot media and persistent storage for navigation maps and user preferences. Its industrial temperature grade handles cabin and behind-dash thermal stress, while SLC endurance tolerates the frequent firmware-update cycles typical in connected vehicles. The 3.3 V parallel interface integrates with NXP i.MX and Renesas R-Car SoCs that expose a native NAND controller. Designers should allocate a 10 percent over-provisioning area to absorb bad-block growth over the 10-year vehicle service life.
Empfohlen
Factory Automation Data Logger
PLC data loggers and industrial sensors use the MT29F4G08ABADAWP-IT:D to record telemetry at high write rates where SLC endurance exceeds MLC/TLC alternatives by 30-50x. The 4 Gbit capacity holds roughly 200,000 2 KB telemetry events before wrap-around, and the parallel x8 bus allows 25 ns sequential reads for rapid log retrieval during diagnostic sessions. ONFI 2.1 timing simplifies the firmware state machine compared to legacy Toggle-mode NAND. Robust ESD ratings on the 48-TSOP-I pins support deployment near motor drives and contactors.
Empfohlen
Point-of-Sale Terminal Storage
POS terminals and payment kiosks depend on the MT29F4G08ABADAWP-IT:D for transaction logs, signature images, and firmware storage with audit-grade reliability. SLC retention of 10+ years at 55 C satisfies retail compliance requirements, and the 25 ns tRC keeps signature-image retrieval latency under 50 ms. The 48-TSOP-I footprint simplifies dual-PCB layouts where the NAND sits on a removable daughter card for serviceability. Field-proven ONFI 2.1 timing reduces firmware certification effort compared to vendor-proprietary NAND interfaces.
Empfohlen
Set-Top Box Firmware and Channel Database
Set-top boxes (STBs) and over-the-air receiver modules use the MT29F4G08ABADAWP-IT:D to store the bootloader, channel line-up, and DVR metadata where 4 Gbit capacity matches the typical 1-2 GB working set. The ONFI 2.1 standard command set integrates cleanly with STMicroelectronics STi and Broadcom BCM SoC NAND controllers, shortening firmware bring-up. The 48-TSOP-I package handles the lead-free reflow profile required by major STB OEMs. Engineers should reserve at least 16 spare blocks for bad-block retirement across 5+ year field deployment.
Empfohlen
Medical Patient Monitoring Device Storage
Patient monitors, infusion pumps, and diagnostic analyzers use the MT29F4G08ABADAWP-IT:D to log vital signs and calibration history where SLC retention and data integrity are non-negotiable. The -40 to +85 C range covers operating-room and bedside deployment, while the 25 ns access time keeps ECG/EEG waveform replay latency under one refresh interval. ONFI 2.1 standardized commands simplify IEC 62304 firmware documentation. The parallel x8 bus supports predictable deterministic writes required by patient-safety standards.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT29F4G08ABADAWP-IT:D – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT29F4G08ABAFAWP-IT:F | MT29F4G08ABADAWP-ITX:D | K9F4G08U0M | W29N04GVSIAA |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Winbond |
| Package | 48-TFSOP-I (18.40 mm) | 48-TFSOP-I (18.40 mm) - same | 48-TFSOP-I (18.40 mm) - same | 48-TSOP-I - same | 48-TSOP-I - same |
| Density | 4 Gbit (512M x 8) | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 1.7 V to 1.95 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| ONFI Version | ONFI 2.1 | ONFI 2.1+ | ONFI 2.1 | ONFI 2.1 | ONFI 2.1 |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| Endurance (P/E) | 100K cycles (SLC) | 100K cycles (SLC) | 100K cycles (SLC) | 100K cycles (SLC) | 100K cycles (SLC) |
| Lifecycle Status | Active (legacy) | Active (recommended) | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- Manufacturer-recommended successor available in same footprint (vs. MT29F4G08ABAFAWP-IT:F)
- Pure 3.3 V design vs 1.8 V migration trap (vs. MT29F4G08ABADAWP-ITX:D)
- Density leadership in 48-TSOP x8 family (vs. MT29F64G08CBAAAWP-IT:A)
- SLC endurance vs cross-vendor MLC alternatives (vs. W29N04GVSIAA)
Designhinweise
Place a 0.1 uF X7R ceramic decoupling capacitor within 3 mm of each VCC pin and a single 4.7 uF bulk capacitor near the package center. Keep the 8-bit I/O bus length-matched within 5 mm to preserve setup/hold margins. Route RE# and WE# traces with 50 ohm characteristic impedance and avoid splitting the ground plane beneath the NAND footprint to reduce cross-talk on the R/B# open-drain signal.
Do not assume the host MCU can handle raw NAND without an external ECC engine. A 4 KB page requires at least 8-bit BCH correction; with 100K P/E cycles and 10-year retention the raw bit error rate grows to ~1e-7, demanding on-the-fly ECC. Polling R/B# instead of using fixed timing avoids both premature-read failures and excessive page-read latency. Never issue a Program command without first confirming the target block is not a factory bad block.
Estimated: At continuous 4 KB page reads at tRC=25 ns, the MT29F4G08ABADAWP-IT:D dissipates roughly 30-50 mW. The 48-TSOP-I package has a typical theta_JA of 60-80 C/W in still air, yielding a junction temperature rise of only 2-4 C above ambient - well within the 125 C maximum. No heatsink is required, but designers should keep the device away from PCB hotspots (LDO regulators, power inductors) by at least 10 mm to avoid derating endurance at elevated temperatures.
R/B# is an open-drain output; provide an external 10K pull-up to VCC and treat it as a slow edge-sensitive signal (typical rise time 50-100 ns with 30 pF bus load). Add a Schmitt-trigger buffer if the host GPIO lacks hysteresis. CE# should be tied low only when the bus is dedicated to a single NAND device; otherwise use CE# to arbitrate multiple TSOP devices and avoid I/O bus contention during power-up.
Compliance-Informationen
RoHS and REACH compliance per Micron product page. Not AEC-Q100 qualified; -40 to +85 C industrial grade does not imply automotive qualification. Lead-free reflow compatible.
