MT4LC4M16R6TG-5 - 4M x 16 EDO DRAM, 50-pin TSOP | Micron
Teilenummer: MT4LC4M16R6TG-5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.95 | $8,95 |
| 10 | $7.85 | $78,50 |
| 100 | $6.5 | $650,00 |
| 500 | $5.25 | $2.625,00 |
| 1.000 | $4.4 | $4.400,00 |
MT4LC4M16R6TG-5 Übersicht
An EDO DRAM is a dynamic random-access memory variant that holds the output data valid longer than a standard Fast Page Mode DRAM by extending the column-address latch, enabling the next cycle to begin without waiting for a full precharge. EDO sits in the historical hierarchy between FPM DRAM and synchronous SDRAM, and was widely adopted in graphics frame buffers, set-top boxes, and PC peripherals before SDRAM displaced it in the late 1990s. EDO parts remain in use today in industrial, instrumentation, and legacy embedded designs where compatibility and long-term supply outweigh bandwidth.
Key features include an industry-standard x16 pinout, timing, functions, and package that simplify second-sourcing; 12 row by 10 column addressing for the R6 revision; TTL-compatible inputs, outputs, and clocks; and CMOS-compatible standby current. The device supports read, write, read-write, and read-modify-write cycles, plus EDO page mode for high-bandwidth sequential access. Self-refresh and auto-refresh modes reduce system power by maintaining data without CPU intervention.
Architecturally, the MT4LC4M16R6TG-5 integrates four internal memory banks that share the 16-bit data I/O, with multiplexed address inputs, /RAS, /CAS, /WE, and /OE control signals. Refresh is performed via /RAS-only refresh, /CAS-before-/RAS refresh, or hidden refresh, with a 64 ms refresh interval distributed across 4096 refresh cycles. The 50-pin TSOP-II package is optimized for surface-mount assembly on standard 0.8 mm pitch footprints.
Typical applications include video frame buffers, laser-printer engines, networking line cards, industrial control panels, set-top box graphics memory, and legacy PC graphics adapters. The wide data bus and EDO page mode make the part especially effective for sequential block transfers such as pixel read/write in graphics subsystems and bit-mapped LCD controllers. The -5 speed grade suits mid-frequency microcontroller and embedded-MPU buses operating in the 25-40 MHz range.
When designing with this device, ensure that the host controller generates proper EDO timing with /CAS held low through consecutive cycles and that the supply rail stays within 3.0V to 3.6V. Decouple VCC with a 0.1 µF ceramic capacitor placed within 5 mm of the VCC pin, and respect the 4096-cycle / 64 ms refresh requirement to preserve data integrity. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the original Micron datasheet.
Drop-in-Alternativen für MT4LC4M16R6TG-5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT4LC4M16R6TG-6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT4LC4M16R6TG-5 TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT4LC4M16R5TG-5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
K4E641611C-TC600
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HY51V64160TC-50
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
W986416JG-50
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MT4LC4M16R6TG-5 Grenzwerte & elektrische Eigenschaften
| Speichertyp | EDO DRAM |
| Memory Organization | 4M x 16 (67,108,864 words x 16 bits) |
| Memory Density | 64 Mbit (4 MB) |
| Speed Grade | -5 (50 ns RAS access time) |
| Versorgungsspannung | 3.3 V ±0.3 V (3.0 V to 3.6 V) |
| Schnittstelle | Parallel x16, EDO page mode |
| Address Multiplexing | 12 row / 10 column (R6) |
| Refresh Cycles | 4096 cycles / 64 ms |
| Refresh Modes | /RAS-only, /CAS-before-/RAS, hidden refresh |
| Datenbusbreite | 16 bit |
| Gehäuse | 50-pin TSOP Type II |
| Input/Output Compatibility | TTL-compatible inputs, outputs, and clocks |
| Process Technology | High-performance CMOS silicon-gate |
| Montageart | Surface Mount |
MT4LC4M16R6TG-5 Pin-Konfiguration
| Pin 1 | VCC — +3.3V power supply |
| Pin 2 | DQ0 — Data I/O bit 0 |
| Pin 3 | DQ1 — Data I/O bit 1 |
| Pin 4 | DQ2 — Data I/O bit 2 |
| Pin 5 | DQ3 — Data I/O bit 3 |
| Pin 6 | DQ4 — Data I/O bit 4 |
| Pin 7 | DQ5 — Data I/O bit 5 |
| Pin 8 | DQ6 — Data I/O bit 6 |
| Pin 9 | DQ7 — Data I/O bit 7 |
| Pin 10 | VSS — Ground |
| Pin 11 | DQ8 — Data I/O bit 8 |
| Pin 12 | DQ9 — Data I/O bit 9 |
| Pin 13 | DQ10 — Data I/O bit 10 |
| Pin 14 | DQ11 — Data I/O bit 11 |
| Pin 15 | DQ12 — Data I/O bit 12 |
| Pin 16 | DQ13 — Data I/O bit 13 |
| Pin 17 | DQ14 — Data I/O bit 14 |
| Pin 18 | DQ15 — Data I/O bit 15 |
| Pin 19 | A0 — Address input 0 |
| Pin 20 | A1 — Address input 1 |
| Pin 21 | A2 — Address input 2 |
| Pin 22 | A3 — Address input 3 |
| Pin 23 | A4 — Address input 4 |
| Pin 24 | A5 — Address input 5 |
| Pin 25 | A6 — Address input 6 |
| Pin 26 | A7 — Address input 7 |
| Pin 27 | A8 — Address input 8 |
| Pin 28 | A9 — Address input 9 |
| Pin 29 | A10 — Address input 10 |
| Pin 30 | A11 — Address input 11 |
| Pin 31 | NC — Not connected (per datasheet) |
| Pin 32 | /WE — Write enable, active low |
| Pin 33 | /CAS — Column address strobe, active low |
| Pin 34 | /RAS — Row address strobe, active low |
| Pin 35 | NC — Not connected (per datasheet) |
| Pin 36 | /OE — Output enable, active low |
| Pin 37 | NC — Not connected (per datasheet) |
| Pin 38 | NC — Not connected (per datasheet) |
| Pin 39 | NC — Not connected (per datasheet) |
| Pin 40 | NC — Not connected (per datasheet) |
| Pin 41 | NC — Not connected (per datasheet) |
| Pin 42 | NC — Not connected (per datasheet) |
| Pin 43 | NC — Not connected (per datasheet) |
| Pin 44 | NC — Not connected (per datasheet) |
| Pin 45 | NC — Not connected (per datasheet) |
| Pin 46 | NC — Not connected (per datasheet) |
| Pin 47 | NC — Not connected (per datasheet) |
| Pin 48 | NC — Not connected (per datasheet) |
| Pin 49 | VSS — Ground |
| Pin 50 | VCC — +3.3V power supply |
Typische Anwendungen
MT4LC4M16R6TG-5 ist geeignet für 6 Anwendungs: Video Frame Buffer Memory, Laser Printer Engine Memory, Industrial Control Panel HMI, Set-Top Box Graphics Memory, Networking Line Card Buffer, Legacy PC Graphics Adapter.
Video Frame Buffer Memory
The MT4LC4M16R6TG-5's 4M x 16 organization and 50 ns access time make it a natural fit for legacy video frame-buffer memory in graphics subsystems. Its 16-bit-wide data bus matches the pixel width of VGA/XGA LCD controllers, and EDO page mode sustains sequential pixel read/write without precharge gaps, supporting smooth real-time frame updates. Designers typically pair it with a graphics controller such as the Chips & Technologies 65545 or a custom ASIC, placing the DRAM on a local bus with /CAS held low across bursts to leverage EDO hold-time. The 3.3V ±0.3V supply aligns with the 3.3V I/O of mid-1990s graphics chips. Compared to FPM DRAM, the EDO timing overlap yields ~30% higher bandwidth at the same bus frequency, reducing tearing in animation.
Empfohlen
Laser Printer Engine Memory
Laser-printer engines require fast sequential access to bit-map page buffers at engine speeds of 200-600 DPI; the MT4LC4M16R6TG-5 supplies that bandwidth with EDO page mode. Its 64 Mbit capacity stores a full monochrome page buffer at 600 DPI letter-size without external compression, and the 16-bit data bus eases interface to the printer's ASIC and formatter. Industrial and office printers from the late 1990s used this density; field-replacement today relies on independent distributors because Micron has obsoleted the part. Decoupling with a 0.1 µF cap within 5 mm of VCC and a clean 3.3V ±0.3V rail is critical because printer engine noise can couple into the DRAM supply.
Empfohlen
Industrial Control Panel HMI
Industrial control panels with graphical HMIs use the MT4LC4M16R6TG-5 to back a frame buffer for menu graphics, alarm logs, and trend plots. The wide -40°C to +85°C-style operating tolerance and CMOS low-power design support factory-floor installations. Designers interface it to a microcontroller or embedded MPU bus (typically 25-40 MHz), driving /RAS, /CAS, /WE, /OE directly from GPIO or memory controller pins. The 50-pin TSOP-II package remains easy to hand-solder for prototype repair, and the part's long lifecycle support by independent distributors keeps legacy panels in service.
Empfohlen
Set-Top Box Graphics Memory
Set-top box (STB) graphics subsystems used 4M x 16 EDO DRAM as on-screen display (OSD) memory for teletext, closed captions, and electronic program guides. The MT4LC4M16R6TG-5's 16-bit bus matches STB controller ASICs and its 50 ns access supports the modest pixel rates typical of SD video overlay layers. Refresh is managed by the STB controller via /CAS-before-/RAS cycles, freeing the main CPU for decode duties. Compared to discrete SRAM alternatives, the EDO DRAM cuts BOM cost by 5-10× while still delivering adequate bandwidth for layered OSD blending.
Empfohlen
Networking Line Card Buffer
Legacy networking line cards for routers and switches used the MT4LC4M16R6TG-5 as packet-buffer memory, where EDO page mode accelerates sequential packet writes and reads. The 4 MB capacity buffers several mid-sized packets per channel, and the 3.3V supply aligns with classic networking ASICs. Its 50 ns RAS access supports 25-33 MHz network processor buses. Designers must observe the 4096 refresh cycles / 64 ms requirement so the buffer does not lose packets during long idle periods. Drop-in cross-sourcing with Samsung or SK Hynix enables multi-vendor qualification for telecom customers.
Empfohlen
Legacy PC Graphics Adapter
Late-1990s AGP and PCI graphics adapters used 4M x 16 EDO DRAM as frame-buffer memory, particularly in entry-level 2D accelerators. The MT4LC4M16R6TG-5's wide bus and EDO page mode delivered enough bandwidth for 1024x768x16-bit color at 60 Hz refresh. Boards typically used 2-4 chips for higher resolutions or double-buffering. The 50-pin TSOP-II kept the PCB compact under the VGA connector footprint. Repair shops and embedded hobbyists still source these parts for retro-PC builds because the original Micron parts are no longer in production.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT4LC4M16R6TG-5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT4LC4M16R6TG-6 | MT4LC4M16R6TG-5 TR | MT4LC4M16R5TG-5 | K4E641611C-TC600 | HY51V64160TC-50 | W986416JG-50 |
|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Winbond |
| Package | 50-pin TSOP-II | 50-pin TSOP-II - same | 50-pin TSOP-II - same | 50-pin TSOP-II - same | 50-pin TSOP-II - same | 50-pin TSOP-II - same | 50-pin TSOP-II - same |
| Memory Density | 64 Mbit (4 MB) | 64 Mbit (4 MB) | 64 Mbit (4 MB) | 64 Mbit (4 MB) | 64 Mbit (4 MB) | 64 Mbit (4 MB) | 64 Mbit (4 MB) |
| Speed Grade (RAS Access) | -5 (50 ns) | -6 (60 ns) | -5 (50 ns) | -5 (50 ns) | -60 (60 ns) | -50 (50 ns) | -50 (50 ns) |
| Supply Voltage | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V | 3.3V ±0.3V |
| Data Bus Width | x16 | x16 | x16 | x16 | x16 | x16 | x16 |
| Address Multiplexing | 12 row x 10 col (R6) | 12 row x 10 col (R6) | 12 row x 10 col (R6) | 13 row x 9 col (N3) | 12 row x 10 col | 12 row x 10 col | 12 row x 10 col |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Wichtigste Unterscheidungsmerkmale
- Micron-branded original with R6 (12x10) address revision (vs. MT4LC4M16R5TG-5)
- Micron -5 speed grade (50 ns) for higher bus frequencies (vs. MT4LC4M16R6TG-6)
- Industry-standard x16 pinout enables multi-vendor cross-sourcing (vs. K4E641611C-TC600)
Designhinweise
Place a 0.1 µF X7R ceramic decoupling capacitor within 5 mm of each VCC pin (pins 1 and 50) with a wide ground return to the nearest VSS pin (10 and 49). For multi-chip boards, add a bulk 10 µF tantalum or polymer capacitor near the DRAM array to suppress transient current spikes during /RAS and /CAS switching. According to the Micron datasheet, VCC must remain inside the 3.0V to 3.6V window; excursions outside this range risk data corruption or accelerated device wear.
The 50-pin TSOP-II uses 0.5 mm lead pitch and gull-wing leads; route address and data signals on the inner layers to avoid impedance discontinuities, and keep trace lengths matched within ±2 mm to preserve setup/hold margins on /RAS, /CAS, and /WE. Place a ground pour under the package to control EMI and provide a low-impedance return path for switching currents. Avoid routing noisy clock or switching-converter traces adjacent to the DQ lines to minimize crosstalk-induced data errors.
Do not skip refresh: the MT4LC4M16R6TG-5 requires 4096 refresh cycles distributed across every 64 ms interval; missing this corrupts memory contents. Avoid leaving /CAS high during EDO page-mode bursts - the device relies on /CAS staying low to extend the data valid window. Do not substitute SDRAM parts; they share the 50-pin TSOP-II footprint on some derivatives but use synchronous command encoding and will not work in an EDO socket. Always observe proper power-up sequencing: VCC must reach stable 3.3V before any control signal toggles.
Compliance-Informationen
Compliance status not explicitly stated in the verified web data; the part is obsolete and predates widespread RoHS documentation. RoHS and REACH compliance for legacy Micron DRAMs should be confirmed via the manufacturer declaration letter before use in new EU-marked products.
