MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
Teilenummer: MW4IC001NR4 ⚠ Letzte Bestellmöglichkeit| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $12.45 | $12,45 |
| 10 | $11.2 | $112,00 |
| 100 | $9.95 | $995,00 |
| 500 | $8.8 | $4.400,00 |
| 1.000 | $7.95 | $7.950,00 |
MW4IC001NR4 Übersicht
An RF power amplifier (RF PA) is a nonlinear active device that boosts low-level RF input signals up to transmission levels while adding gain, distortion, and noise. In cellular infrastructure, the main PA drives the antenna; an APD feedback amplifier such as the MW4IC001NR4 is tapped from the coupler path so that the digital predistortion engine can model and pre-invert the main amplifier's AM-AM and AM-PM curves. Wideband LDMOS technology (Laterally Diffused Metal-Oxide Semiconductor) is the standard silicon process for sub-3 GHz high-power base-station PAs because it combines high breakdown voltage, good thermal conductivity, and acceptable RF efficiency at frequencies up to roughly 2.7 GHz.
Key specifications include 13 dB small-signal gain, 12 mA quiescent supply current at 26 V, and frequency coverage suitable for GSM 900, DCS 1800, UMTS 2100, and 850/900/1900/2100 MHz W-CDMA bands. Internally matched 50 ohm input and output networks simplify board layout and remove the need for external matching components. The LDMOS die is biased class-AB for linear operation, and the part is rated for continuous duty over the -40 C to +85 C ambient range. The wideband response removes the need for band-specific feedback amplifiers in multiband radio designs.
The architecture integrates two amplification stages with on-chip inter-stage matching, a quiescent-current bias setting resistor pin, and a regulated drain bias network. Compared with a discrete two-stage LDMOS PA, the MW4IC001NR4 reduces PCB area by eliminating external matching passives and improves repeatability unit-to-unit. The device is designed to sit in a low-power sampled path, not the main transmit chain, so absolute efficiency is less critical than predictable distortion characteristics.
Typical applications include W-CDMA analog predistortion feedback paths, GSM/EDGE linearizer reference amplifiers, multi-standard (GSM/UMTS) base-station transmitter subsystems, and instrumentation amplifiers used in PA characterization test beds. It is equally usable as a small-signal driver when its 13 dB gain and broadband flatness are needed ahead of a downstream power block.
Designers should observe NXP's recommended evaluation board layout for the PLD-1.5 package, including flange-mount screw-down for thermal dissipation, and should ensure the device is biased within the 26 V data-sheet envelope. Lead-free reflow profiles (260 C peak) are supported on the N-suffix part, but flange-mounting to a heatsink is mandatory at continuous 900 mW output.
This page consolidates verified distributor pricing, drop-in alternatives, and engineering design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MW4IC001NR4 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MW4IC001NR4 (gleiche Bauform und Footprint) – abweichend in Input / Output Impedance, RoHS Status, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW4IC001GR4
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW4IC001NR4G
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC2230GNR4
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC2020GNR4
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
AFT05MS006N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC001NR4 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (originally Freescale Semiconductor) |
| Part Number | MW4IC001NR4 |
| RF Type | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Funktion | Wideband integrated power amplifier / APD feedback amplifier |
| Frequency Range | 800 MHz to 2170 MHz |
| Gain (small-signal) | 13 dB |
| Output Power (P1dB) | 900 mW (approx. 29.5 dBm) |
| Versorgungsspannung | 26 V (typ.) / 28 V (rated) |
| Supply Current (quiescent) | 12 mA (typ.) |
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| Input / Output Impedance | Internally matched to 50 ohm |
| Gehäuse / Bauform | PLD-1.5 (over-molded plastic flange-mount) |
| Packaging | Tape & Reel (R4 suffix = 500 pcs/reel standard) |
| Betriebstemperatur | -40 C to +85 C ambient |
| Termination Finish | Lead-free (matte tin) |
| RoHS-Status | Compliant (N-suffix = lead-free transition marking) |
MW4IC001NR4 pld-1.5 (over-molded plastic flange-mount) Pinbelegungsleitfaden
Pinbelegung für MW4IC001NR4 (pld-1.5 (over-molded plastic flange-mount)-Gehäuse). Dieses analoge Bauteil verfügt über Eingangs-, Ausgangs- und Versorgungspins. Offset-Null-, Kompensations- und Enable-Pin-Konfigurationen entnehmen Sie dem Herstellerdatenblatt. Ideal für Signalaufbereitung und Verstärkerschaltungen.
Keine detaillierten Pinbelegungsdaten verfügbar für MW4IC001NR4.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Sicherer Arbeitsbereich (estimated from datasheet bias envelope)
Typische Anwendungen
MW4IC001NR4 ist geeignet für 6 Anwendungs: W-CDMA Analog Predistortion Feedback Path, GSM / EDGE Linearizer Reference Amplifier, Multi-Standard Base-Station Transmitter Subsystem, PA Characterization Test Bed, Small-Signal RF Driver Stage, Repeater / Femtocell Transmitter Linearizer.
W-CDMA Analog Predistortion Feedback Path
The MW4IC001NR4 is purpose-built for the APD feedback path of W-CDMA base-station transmitters, where it samples the main PA's output via a directional coupler and presents a clean, repeatable nonlinear signature to the digital pre-corrector. Its 13 dB small-signal gain and 800-2170 MHz coverage handle UMTS Band I (2100 MHz), Band VIII (900 MHz), and Band V (850 MHz) without band-switching. With 900 mW of output capability and 12 mA quiescent bias at 26 V, it stays well within the linear envelope while delivering enough drive for the ADC downstream of the feedback chain. The internally matched 50 ohm ports simplify the layout to a microstrip trace plus bias choke, eliminating the external matching passives that would otherwise be needed at every band.
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GSM / EDGE Linearizer Reference Amplifier
In multi-mode base stations, the MW4IC001NR4 provides the broadband reference amplifier inside the linearizer block of GSM/EDGE transmitter chains. Its 13 dB gain plus 800 MHz to 2170 MHz response covers DCS 1800, GSM 900, and PCS 1900 with a single device, eliminating band-specific linearizer hardware. The 26 V LDMOS bias rail is already present in macro-cell transmitter lineups, so the MW4IC001NR4 drops into the same power-distribution tree as the main PA. Designers use its distortion signature as the reference to compensate for the main amplifier's AM-AM and AM-PM curves, which tightens ACLR and reduces spectral regrowth on the EDGE 8-PSK constellation.
Empfohlen
Multi-Standard Base-Station Transmitter Subsystem
When a single base-station radio must support GSM, UMTS, and LTE across 800 MHz to 2170 MHz, the MW4IC001NR4 serves as the unified APD reference amplifier for all standards. Its PLD-1.5 over-molded package is the same NXP family used in main transmit PAs, so mechanical integration, heatsinking, and bias sequencing are reused across the design. The 12 mA quiescent current keeps the always-on feedback path from loading the radio's housekeeping supply, and the 900 mW output capability matches the dynamic range of typical 14-bit ADC samplers used in modern DPD ASICs.
Empfohlen
PA Characterization Test Bed
In laboratory test setups used to characterize external LDMOS PAs, the MW4IC001NR4 acts as a known reference amplifier with documented gain, P1dB, and distortion behavior. Test engineers inject a swept CW or multi-carrier stimulus through the device under test (DUT) and through the MW4IC001NR4 reference path, then compare spectra to validate the DUT's ACLR, EVM, and noise-power-ratio behavior. Because the MW4IC001NR4 is internally matched to 50 ohm and broadband to 2170 MHz, it removes cable and matching discontinuities from the measurement uncertainty budget. Its PLD-1.5 package also makes it reusable across temperature-chamber tests from -40 C to +85 C.
Empfohlen
Small-Signal RF Driver Stage
Beyond feedback paths, the MW4IC001NR4 is usable as a small-signal broadband driver when a downstream higher-power block needs 13 dB of flat gain across 800-2170 MHz. Typical uses include driving mixer LO chains, instrumentation upconverters, and reference signal generators in cellular test equipment. Its 900 mW output is more than adequate for most driver requirements, and the internally matched 50 ohm ports eliminate board-level matching networks at every band. The 26 V bias can be derived from an existing telecom rail, so no extra power-tree design is required when retrofitting into an established RF chassis.
Empfohlen
Repeater / Femtocell Transmitter Linearizer
In indoor pico-cell, femtocell, and RF repeater designs, the MW4IC001NR4 provides a low-cost APD reference amplifier for the small transmit chain. Its compact PLD-1.5 flange-mount package fits the mechanical envelope of a 1U repeater chassis, and the -40 C to +85 C operating range covers indoor and outdoor enclosures without derating. Designers benefit from the same 50 ohm internal match used in macro-cell applications, which means a repeater can reuse macro-cell firmware and DPD coefficients without re-tuning. The 12 mA quiescent current is friendly to PoE-powered small-cell radios where every milliamp matters for thermal and PoE-budget reasons.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW4IC001NR4 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW4IC001GR4 | MW4IC001NR4G | MW4IC2230GNR4 | MW4IC2020GNR4 | AFT05MS006N |
|---|---|---|---|---|---|---|
| Package | PLD-1.5 | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same |
| Brand | NXP Semiconductors | NXP Semiconductors (same brand) | NXP Semiconductors (same brand) | NXP Semiconductors (same brand) | NXP Semiconductors (same brand) | NXP Semiconductors (same brand) |
| Frequency Range | 800 - 2170 MHz | 800 - 2170 MHz | 800 - 2170 MHz | 1800 - 2300 MHz (narrower) | 1800 - 2200 MHz | 1.8 - 941 MHz (narrower at low end) |
| Small-Signal Gain | 13 dB | 13 dB | 13 dB | approx. 28 dB (much higher) | approx. 24 dB | approx. 18 dB |
| Output Power (P1dB) | 900 mW (approx. 29.5 dBm) | 900 mW | 900 mW | ~30 W (much higher) | ~20 W (much higher) | ~6 W (higher) |
| Supply Voltage | 26 V typ. / 28 V rated | 26 V typ. / 28 V rated | 26 V typ. / 28 V rated | 28 V (main-PA bias) | 28 V | 7.5 V to 12.5 V (airfast low-voltage) |
| Lead-Free / RoHS | Yes (matte tin) | No (SnPb) | Yes (green/lead-free) | Yes | Yes | Yes |
| Typical Application | APD feedback amplifier | APD feedback (SnPb variant) | APD feedback (lead-free variant) | Main W-CDMA transmit PA | Main W-CDMA transmit PA | VHF/UHF driver or main PA |
Wichtigste Unterscheidungsmerkmale
- Lead-free N-suffix variant of the Freescale MW4IC001G (vs. MW4IC001GR4)
- Purpose-built for APD feedback rather than main transmit (vs. MW4IC2230GNR4)
- Broadband 800-2170 MHz single-device coverage (vs. AFT05MS006N)
Designhinweise
Estimated: at 26 V supply and 900 mW Pout, total DC draw at the quiescent operating point is roughly 12 mA * 26 V = 312 mW, so the dissipation envelope is bounded by the quiescent bias rather than RF output. The PLD-1.5 package requires a flange-mount screw connection to a copper or aluminum heatsink with thermal compound; surface-mount-only attachment will cause thermal runaway at full duty cycle. Maintain case temperature below 85 C ambient for continuous operation; for pulsed W-CDMA frames the case can rise higher briefly.
Route the RF input and output as 50 ohm microstrip (or stripline on multilayer boards) directly to the device leads; the MW4IC001NR4 is internally matched so no external L/C network is needed. Place the drain bias choke within 5 mm of the drain pin and use a 1000 pF RF-bypass + 10 uF electrolytic bulk cap on the bias feed to suppress low-frequency oscillation. Ground the flange with multiple short vias to a continuous ground pour under the package to minimize lead inductance.
Do NOT attempt to reflow-solder the PLD-1.5 package - it is a flange-mount through-hole-style part designed for screw-down thermal contact. Exceeding 28 V on the drain will violate the LDMOS breakdown envelope and permanently damage the die. Per the Freescale transition notice, the SnPb-finished predecessor (no N-suffix) is electrically identical but RoHS non-compliant - do not mix the two finishes on the same lead-free reflow line.
Compliance-Informationen
N-suffix in MW4IC001NR4 indicates matte-tin lead-free terminations per the Freescale/NXP transition notice. RoHS compliant. AEC-Q100 is not applicable - this is an infrastructure / base-station RF power IC, not an automotive-qualified part. Halogen-free status not stated in verified Web Data.
