MW4IC001NR4 vs MW4IC001MR4 Vergleich
Detaillierter Direktvergleich von MW4IC001NR4 von NXP Semiconductors und MW4IC001MR4 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
MW4IC001NR4 ⚠ Letzte BestellmöglichkeitNXP Semiconductors
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
MW4IC001MR4 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MW4IC001NR4 | MW4IC001MR4 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,95 | $10,75 |
| Manufacturer | NXP Semiconductors (originally Freescale Semiconductor) | — |
| Part Number | MW4IC001NR4 | — |
| RF Type | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Funktion | Wideband integrated power amplifier / APD feedback amplifier | — |
| Frequency Range | 800 MHz to 2170 MHz | 800 MHz to 2170 MHz |
| Gain (small-signal) | 13 dB | — |
| Output Power (P1dB) | 900 mW (approx. 29.5 dBm) | — |
| Versorgungsspannung | 26 V (typ.) / 28 V (rated) | — |
| Supply Current (quiescent) | 12 mA (typ.) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOS) |
| Input / Output Impedance | Internally matched to 50 ohm | 50 ohm (nominal) |
| Gehäuse / Bauform | PLD-1.5 (over-molded plastic flange-mount) | — |
| Packaging | Tape & Reel (R4 suffix = 500 pcs/reel standard) | — |
| Betriebstemperatur | -40 C to +85 C ambient | — |
| Termination Finish | Lead-free (matte tin) | — |
| RoHS-Status | Compliant (N-suffix = lead-free transition marking) | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) |
| Output Power (CW, P1dB typical) | — | 900 mW (29.5 dBm) |
| Power Gain at 2170 MHz | — | 13 dB |
| Drain Efficiency at 2170 MHz | — | 38 % |
| Drain Supply Voltage (VDD) | — | 28 V (typ) |
| Quiescent Current (IDQ) | — | 12 mA |
| Supported Air Interfaces | — | GSM, TDMA, CDMA, EDGE, W-CDMA |
| Operating Case Temperature | — | -40C to +85C |
| Gehäuse | — | PLD-1.5 (RF1649-4, over-molded plastic) |
| Montageart | — | Surface Mount |
| Terminal Finish | — | Tin/Lead (Sn/Pb) |
| Application Role | — | Analog predistortion (DPD) reference amplifier |