STF18N60M2 - 650V 12A N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STF18N60M2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.45 | $145,00 |
| 500 | $1.3 | $650,00 |
| 1.000 | $1.2 | $1.200,00 |
STF18N60M2 Übersicht
A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are preferred for their fast switching speeds, high input impedance, and low conduction losses compared to bipolar transistors.
Key features of the STF18N60M2 include a low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 450 mJ, ensuring reliability under inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation.
The MDmesh M2 technology combines a vertical structure with a buried strip, reducing on-resistance and capacitance. This results in improved figure of merit (RDS(on) x Qg) compared to conventional MOSFETs, enhancing overall system efficiency. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. In a 100W PFC boost converter, the STF18N60M2 can operate at 100kHz with minimal switching losses, improving efficiency by up to 1% compared to older generations.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve full enhancement. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. For thermal management, use a heatsink or adequate PCB copper area to keep the junction temperature below 150°C under maximum load.
Drop-in-Alternativen für STF18N60M2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STF18N60M2-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF18N60M2-EP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF18N60M2-1-EP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPP60R099P7
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FCPF12N60
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF18N60M2 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A |
| Continuous Drain Current (ID) at 100°C | 7.6 A |
| Pulsed Drain Current (IDM) | 36 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) typical | 0.29 ohm |
| On-Resistance (RDS(on)) max | 0.34 ohm |
| Total Gate Charge (Qg) | 28 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 95 pF |
| Reverse Transfer Capacitance (Crss) | 4.5 pF |
| Avalanche Energy (EAS) | 450 mJ |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C |
| Gehäuse | TO-220FP |
| Montageart | Through Hole |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
STF18N60M2 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the load |
| Pin 3 | Source — Source terminal, connected to ground |
Sicherer Arbeitsbereich
Typische Anwendungen
STF18N60M2 ist geeignet für 6 Anwendungs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Motor Drives, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STF18N60M2 is ideal for SMPS due to its 650V rating and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency, and its low gate charge (28 nC) reduces switching losses, improving efficiency. The TO-220FP package allows easy heatsinking, and the device can handle the high voltage spikes from the transformer leakage inductance. With a 12A current capability, it supports power levels up to 200W in single-switch topologies. The avalanche ruggedness (450 mJ) ensures reliability during load transients. Compared to older MOSFETs, the MDmesh M2 technology reduces conduction and switching losses, enabling higher power density designs.
Empfohlen
Power Factor Correction (PFC)
In PFC boost converters, the STF18N60M2 operates at high frequency to shape the input current waveform. Its 650V rating provides ample margin for the 400V output bus, and the low RDS(on) minimizes conduction losses. The low gate charge enables efficient switching at 100kHz, reducing EMI and improving power factor. The device's fast body diode reduces reverse recovery losses, which is critical in continuous conduction mode (CCM) PFC. The TO-220FP package simplifies thermal management, allowing the MOSFET to dissipate heat without additional insulation. With a 12A current rating, it can handle PFC stages up to 1kW. The MDmesh M2 technology ensures low capacitance, reducing switching losses and improving overall system efficiency.
Empfohlen
LED Lighting Drivers
The STF18N60M2 is well-suited for LED drivers, particularly in offline applications. Its 650V rating allows direct connection to rectified mains (up to 400V), and the low on-resistance reduces power dissipation, improving overall driver efficiency. The device can switch at high frequencies, enabling compact magnetic components. In a typical flyback LED driver, the MOSFET handles the primary-side switching, and its avalanche ruggedness protects against voltage spikes from the transformer. The TO-220FP package provides easy mounting on a heatsink, ensuring reliable operation in high-temperature environments. With a 12A current rating, it supports LED drivers up to 150W. The low gate charge simplifies gate drive design, reducing component count and cost.
Empfohlen
Solar Inverters
In solar microinverters and string inverters, the STF18N60M2 is used in DC-DC boost stages and DC-AC conversion. Its 650V rating is suitable for the high DC bus voltages in photovoltaic systems, and the low on-resistance minimizes losses, maximizing energy harvest. The device's fast switching speed enables high-frequency operation, reducing the size of magnetics and improving power density. The avalanche ruggedness ensures reliability under varying load conditions, such as cloud cover. The TO-220FP package allows efficient heat dissipation, critical for outdoor installations. With a 12A current rating, it can handle power levels up to 500W per switch. The MDmesh M2 technology provides a good balance between conduction and switching losses, enhancing inverter efficiency.
Empfohlen
Motor Drives
The STF18N60M2 can be used in motor drive applications, particularly in variable frequency drives (VFDs) for industrial motors. Its 650V rating allows operation from 3-phase mains (up to 480V), and the low on-resistance reduces conduction losses in the inverter stage. The device's fast switching speed enables PWM control at high frequencies, improving motor performance and reducing audible noise. The avalanche ruggedness protects against inductive spikes from the motor windings. The TO-220FP package simplifies heatsinking, essential for continuous operation. With a 12A current rating, it can drive motors up to 2kW. The low gate charge reduces gate drive power requirements, simplifying the control circuit.
Empfohlen
Battery Chargers
In battery chargers for electric vehicles and industrial equipment, the STF18N60M2 is used in the power conversion stage. Its 650V rating allows operation from universal mains input, and the low on-resistance reduces losses, improving charging efficiency. The device can switch at high frequencies, enabling compact charger designs. In a typical LLC resonant charger, the MOSFET operates at high frequency with soft switching, and its low output capacitance reduces circulating currents. The avalanche ruggedness ensures reliability during load transients. The TO-220FP package provides good thermal performance, essential for high-power charging. With a 12A current rating, it supports chargers up to 500W. The MDmesh M2 technology ensures low switching losses, enhancing overall charger efficiency.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STF18N60M2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STF18N60M2-1 | STF18N60M2-EP | IPP60R099P7 | FCPF12N60 |
|---|---|---|---|---|---|
| Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 12 A | 12 A | 12 A | 11 A | 12 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm | 0.29 ohm | 0.25 ohm | 0.099 ohm | 0.32 ohm |
| Total Gate Charge (Qg) | 28 nC | 28 nC | 25 nC | 38 nC | 30 nC |
| Avalanche Energy (EAS) | 450 mJ | 450 mJ | 500 mJ | 200 mJ | 300 mJ |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Wichtigste Unterscheidungsmerkmale
- Higher avalanche energy rating (vs. IPP60R099P7)
- Lower gate charge (vs. FCPF12N60)
- Higher voltage rating (vs. IPP60R099P7)
Designhinweise
The STF18N60M2 has a junction-to-case thermal resistance of 3.5°C/W. For a power dissipation of 30W, the junction temperature rise is 105°C above case temperature. Use a heatsink with a thermal resistance of 1.5°C/W or better to keep the junction below 150°C at 25°C ambient. Ensure proper thermal interface material is used.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10 ohm) to dampen ringing. For the drain and source connections, use wide copper traces to reduce resistance and inductance. Add a snubber circuit across the drain-source to suppress voltage spikes during switching.
Do not exceed the maximum gate-source voltage of ±25V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to fully enhance the channel. When switching inductive loads, the avalanche energy rating (450 mJ) must not be exceeded; use a clamping circuit if necessary. Also, verify that the junction temperature does not exceed 150°C under worst-case conditions.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive use, consider STF18N60M2-1-EP or other automotive-grade parts.