STF6N52K3 - 6A, 525V N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STF6N52K3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.25 | $1,25 |
| 10 | $1.12 | $11,20 |
| 100 | $0.98 | $98,00 |
| 500 | $0.87 | $435,00 |
| 1.000 | $0.79 | $790,00 |
STF6N52K3 Übersicht
A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are widely used in switch-mode power supplies, motor drives, lighting, and other applications requiring efficient high-voltage switching. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the STF6N52K3 include a very low gate charge (Qg) of 18nC, which enables fast switching and reduced driver losses. The device has a built-in avalanche capability, with an avalanche energy rating (EAS) of 150mJ, ensuring robustness in inductive load switching. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The operating junction temperature range is -55°C to +150°C, making it suitable for demanding environments.
The STF6N52K3 is based on STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage. This technology reduces conduction and switching losses, improving overall system efficiency. The device also features a fast intrinsic body diode, which is beneficial for applications requiring freewheeling current.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and high-voltage DC-DC converters. The high breakdown voltage and low on-resistance make it ideal for 380V DC bus systems and universal input (85-265V AC) power supplies. In these applications, the STF6N52K3 provides reliable switching performance and high efficiency.
When designing with this device, ensure proper gate drive voltage (recommended VGS = 10V) to achieve the lowest on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; calculate the thermal budget based on the application's power loss. Additionally, consider the gate-source voltage rating (VGS max = ±30V) and use appropriate gate protection if necessary.
Drop-in-Alternativen für STF6N52K3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STF6N52K3-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF6N52K3-2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF6N52K3-3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPP60R099CP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FDP6N50
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STF6N52K3 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 525 V |
| Continuous Drain Current (ID) at 25°C | 6 A |
| Pulsed Drain Current (IDM) | 24 A |
| On-Resistance (RDS(on)) at VGS=10V | 1.2 Ω (typical) |
| Gate-Source Voltage (VGS) | ±30 V |
| Gate Charge (Qg) | 18 nC (typical) |
| Avalanche Energy (EAS) | 150 mJ |
| Power Dissipation (PD) at 25°C | 45 W |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C |
| Gehäuse | TO-220FP |
| Montageart | Through Hole |
| Thermal Resistance (Junction-to-Case) | 3.5 °C/W |
| Technology | MDmesh K3 |
| RoHS-Status | Compliant |
STF6N52K3 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the load |
| Pin 3 | Source — Source terminal, connected to ground |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
STF6N52K3 ist geeignet für 6 Anwendungs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, High-Voltage DC-DC Converters, Motor Drives, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STF6N52K3 is ideal for SMPS due to its high breakdown voltage (525V) and low on-resistance (1.2Ω). In a typical flyback converter, the MOSFET switches at high frequency, and its low gate charge (18nC) reduces switching losses. The TO-220FP package allows easy heatsinking, ensuring reliable operation at power levels up to 45W. Compared to lower-voltage MOSFETs, the 525V rating provides ample margin for 380V DC bus systems, improving system reliability.
Empfohlen
Power Factor Correction (PFC)
In PFC circuits, the STF6N52K3 operates in boost converter topology to shape the input current waveform. Its high voltage rating (525V) handles the boosted output voltage (typically 400V), while the low RDS(on) minimizes conduction losses. The fast body diode reduces reverse recovery losses, improving efficiency. The device's avalanche capability (150mJ) ensures robustness during transient overvoltage conditions. With a gate charge of 18nC, the STF6N52K3 can be driven efficiently by standard PFC controllers.
Empfohlen
LED Lighting Drivers
The STF6N52K3 is suitable for LED drivers, especially in high-voltage applications like street lighting. Its 525V rating allows direct connection to rectified AC mains (up to 265VAC), simplifying the driver design. The low on-resistance reduces power loss, improving overall driver efficiency. The TO-220FP package provides thermal isolation, making it easier to mount on a heatsink without additional insulation. The device's fast switching speed enables high-frequency operation, reducing the size of magnetic components.
Empfohlen
High-Voltage DC-DC Converters
In high-voltage DC-DC converters, such as those used in solar inverters or electric vehicle chargers, the STF6N52K3 provides efficient switching. Its 525V rating is suitable for 380V DC bus systems, and the low gate charge enables high-frequency operation, reducing transformer size. The device's avalanche rating ensures reliability during inductive load switching. The TO-220FP package allows for straightforward thermal management, essential for high-power applications.
Empfohlen
Motor Drives
The STF6N52K3 can be used in motor drive applications, particularly for small to medium power motors. Its high voltage rating (525V) is suitable for 3-phase AC motor drives operating from 230VAC or 380VAC supplies. The low on-resistance minimizes conduction losses, and the fast switching reduces switching losses. The device's ruggedness, including avalanche capability, ensures reliable operation in inductive load switching. The TO-220FP package simplifies heatsinking in motor drive inverters.
Empfohlen
Uninterruptible Power Supplies (UPS)
In UPS systems, the STF6N52K3 is used in the inverter stage to convert DC to AC. Its high voltage rating (525V) handles the DC bus voltage (typically 360V), and the low on-resistance improves efficiency. The device's fast switching speed enables high-frequency PWM, reducing output filter size. The TO-220FP package provides thermal isolation, simplifying heatsink mounting. The avalanche capability ensures robustness during load transients.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STF6N52K3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STF6N52K3-1 | IPP60R099CP | FDP6N50 |
|---|---|---|---|---|
| Package | TO-220FP | TO-220FP | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 525 V | 525 V | 600 V | 500 V |
| Continuous Drain Current (ID) | 6 A | 6 A | 6 A | 6 A |
| On-Resistance (RDS(on)) | 1.2 Ω | 1.2 Ω | 0.099 Ω | 1.1 Ω |
| Gate Charge (Qg) | 18 nC | 18 nC | 38 nC | 20 nC |
| Power Dissipation (PD) | 45 W | 45 W | 104 W | 50 W |
| Avalanche Energy (EAS) | 150 mJ | 150 mJ | 200 mJ | 100 mJ |
Wichtigste Unterscheidungsmerkmale
- Low gate charge (18nC) enables faster switching (vs. IPP60R099CP)
- Isolated TO-220FP package simplifies thermal management (vs. FDP6N50)
- Higher avalanche energy rating (150mJ) for robustness (vs. FDP6N50)
Designhinweise
The STF6N52K3 has a maximum power dissipation of 45W at 25°C case temperature. For high-power applications, ensure adequate heatsinking. The TO-220FP package has a junction-to-case thermal resistance of 3.5°C/W. Calculate the required heatsink based on the power loss and ambient temperature. For example, at 20W dissipation, the junction temperature rise is 70°C above case temperature, so a heatsink with a thermal resistance of 2°C/W or lower is recommended.
For the TO-220FP package, ensure proper mounting to the heatsink with thermal compound. The tab is electrically isolated, so no insulation pad is needed. Keep the gate drive traces short and use a gate resistor (e.g., 10Ω) to reduce ringing. Place a 100nF ceramic capacitor close to the gate driver to supply peak gate current.
Do not exceed the maximum gate-source voltage of ±30V. Use a zener diode or TVS for gate protection if the gate drive can overshoot. Also, ensure the drain-source voltage does not exceed 525V, especially during transients. The avalanche rating of 150mJ provides some margin, but repetitive avalanche events should be avoided.
Compliance-Informationen
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified parts.