STGD20N45LZAG - 20A 450V IGBT | STMicroelectronics | D2PAK
Teilenummer: STGD20N45LZAG ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.82 | $1.820,00 |
STGD20N45LZAG Übersicht
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. It is a key component in power electronics, serving as a switch in applications such as inverters, converters, and motor drives. IGBTs are part of the power semiconductor family, which also includes power MOSFETs and thyristors, and are essential for managing high voltages and currents in industrial and consumer electronics.
Key features of the STGD20N45LZAG include a collector-emitter voltage of 450V, a continuous collector current of 20A at 25°C (15A at 100°C), and a low VCE(sat) of 1.25V typical, which reduces conduction losses. The device offers a fast switching time with a typical fall time of 60ns, and a maximum junction temperature of 150°C. It is RoHS compliant and halogen-free, meeting modern environmental standards.
The STGD20N45LZAG utilizes ST's advanced trench-gate field-stop technology, which provides a superior trade-off between conduction and switching losses. The field-stop structure reduces the tail current during turn-off, improving switching performance. The device also features a positive temperature coefficient of VCE(sat), which facilitates parallel operation for higher current applications.
Typical applications include induction heating (IH) cookers, where the fast switching and low saturation voltage enable efficient power delivery; motor control in industrial drives, where the device handles high voltages and currents; and uninterruptible power supplies (UPS) and solar inverters, where reliability and efficiency are critical. The D2PAK package allows for surface-mount assembly, reducing manufacturing complexity.
When designing with this IGBT, ensure adequate gate drive voltage (typically 15V) to achieve low saturation voltage, and provide proper thermal management via the exposed pad and PCB copper area. The integrated diode eliminates the need for an external freewheeling diode in many applications, simplifying the design.
Drop-in-Alternativen für STGD20N45LZAG – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STGD20N45LZ
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STGD20N45LZAG-TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IKW20N60H3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NGB20N45CL
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FGA20N45LSD
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STGD20N45LZAG Grenzwerte & elektrische Eigenschaften
| Collector-Emitter Voltage (VCE) | 450 V |
| Continuous Collector Current (IC) at 25°C | 20 A |
| Continuous Collector Current (IC) at 100°C | 15 A |
| Pulsed Collector Current (ICM) | 60 A |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Saturation Voltage (VCE(sat)) at 25°C | 1.25 V typical |
| Saturation Voltage (VCE(sat)) at 125°C | 1.5 V typical |
| Turn-On Delay Time (td(on)) | 25 ns |
| Rise Time (tr) | 15 ns |
| Turn-Off Delay Time (td(off)) | 80 ns |
| Fall Time (tf) | 60 ns |
| Input Capacitance (Cies) | 1200 pF |
| Total Power Dissipation (Ptot) | 150 W |
| Operating Junction Temperature (Tj) | -55°C to +150°C |
| Gehäuse | D2PAK (TO-263) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
STGD20N45LZAG Pin-Konfiguration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Collector — Collector terminal |
| Pin 3 | Emitter — Emitter terminal |
| Pin 4 | Collector (tab) — Exposed pad is collector |
Sicherer Arbeitsbereich
Typische Anwendungen
STGD20N45LZAG ist geeignet für 6 Anwendungs: Induction Heating, Motor Control, Uninterruptible Power Supplies (UPS), Solar Inverters, Power Factor Correction (PFC), Welding Equipment.
Induction Heating
The STGD20N45LZAG is ideal for induction heating (IH) cookers and industrial induction heaters. Its 450V rating and 20A current capability handle the high voltages and currents in resonant inverter topologies. The fast switching speed (fall time 60ns) enables operation at frequencies up to 20kHz, which is typical for IH systems. The low VCE(sat) of 1.25V reduces conduction losses, improving overall efficiency. In a typical IH application, the IGBT is used in a half-bridge or full-bridge inverter, switching at high frequency to generate eddy currents in the cooking vessel. The integrated freewheeling diode simplifies the circuit by eliminating the need for an external diode. Proper gate drive (15V) and thermal management are essential to maintain junction temperature below 150°C. Compared to MOSFETs, the IGBT offers lower conduction losses at high voltages, making it more efficient for IH applications.
Empfohlen
Motor Control
The STGD20N45LZAG is well-suited for motor control in industrial drives, home appliances, and electric vehicles. Its 450V rating accommodates 230V AC or 400V DC bus voltages, and the 20A current rating supports motors up to several kilowatts. The fast switching speed allows for PWM frequencies up to 20kHz, reducing acoustic noise and improving motor efficiency. The low VCE(sat) minimizes conduction losses, which is critical for continuous operation. In a typical motor drive, the IGBT is used in a three-phase inverter, switching at high frequency to control the motor speed and torque. The integrated diode acts as a freewheeling diode, protecting the device from inductive spikes. For higher power applications, multiple IGBTs can be paralleled due to the positive temperature coefficient of VCE(sat). Thermal management via heatsink or forced air cooling is necessary to dissipate the heat generated during operation.
Empfohlen
Uninterruptible Power Supplies (UPS)
The STGD20N45LZAG is used in UPS systems for power conversion and backup power. Its 450V rating is suitable for 230V AC systems, and the 20A current capability handles the load requirements of typical UPS units. The fast switching speed enables high-frequency operation, reducing the size of magnetic components such as transformers and inductors. The low VCE(sat) improves efficiency, which is crucial for battery-powered operation. In a UPS, the IGBT is used in the inverter stage to convert DC from the battery to AC for the load. The integrated diode simplifies the design by providing freewheeling protection. The device's ruggedness and wide operating temperature range (-55°C to +150°C) ensure reliable operation in various environments. Proper gate drive and snubber circuits are recommended to minimize switching losses and voltage spikes.
Empfohlen
Solar Inverters
The STGD20N45LZAG is suitable for solar inverter applications, where it is used in DC-AC conversion stages. Its 450V rating is adequate for typical solar panel voltages (up to 400V), and the 20A current rating supports inverters up to 5kW. The fast switching speed enables MPPT (Maximum Power Point Tracking) algorithms to operate at high frequencies, improving energy harvest. The low VCE(sat) reduces conduction losses, increasing overall system efficiency. In a solar inverter, the IGBT is used in a full-bridge or half-bridge topology, switching at high frequency to synthesize a sinusoidal output. The integrated diode acts as a freewheeling diode, simplifying the circuit. The device's high junction temperature rating (150°C) allows operation in hot environments, which is common for outdoor installations. Thermal management via heatsink is essential to maintain reliability.
Empfohlen
Power Factor Correction (PFC)
The STGD20N45LZAG can be used in power factor correction circuits to improve the power quality of electronic loads. Its 450V rating is suitable for boost converters operating from 230V AC, and the 20A current capability handles the input current of typical PFC stages. The fast switching speed enables high-frequency operation, reducing the size of the boost inductor. The low VCE(sat) minimizes conduction losses, improving efficiency. In a PFC circuit, the IGBT is used as the main switch in a boost converter, switching at high frequency to shape the input current waveform. The integrated diode acts as the boost diode, eliminating the need for an external diode. The device's ruggedness and wide temperature range ensure reliable operation in demanding conditions. Proper gate drive and snubber circuits are recommended to reduce switching losses and EMI.
Empfohlen
Welding Equipment
The STGD20N45LZAG is used in welding equipment, such as inverter-based welding machines. Its 450V rating and 20A current capability handle the high currents required for welding arcs. The fast switching speed enables high-frequency operation, reducing the size and weight of the transformer. The low VCE(sat) reduces conduction losses, improving efficiency and reducing heat generation. In a welding machine, the IGBT is used in the inverter stage to convert DC to high-frequency AC, which is then stepped down and rectified for the welding arc. The integrated diode provides freewheeling protection. The device's ruggedness and wide temperature range ensure reliable operation in harsh environments. Proper thermal management is essential to handle the high power dissipation during welding.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STGD20N45LZAG – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STGD20N45LZ | IKW20N60H3 | NGB20N45CL |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Collector-Emitter Voltage (VCE) | 450 V | 450 V | 600 V | 450 V |
| Continuous Collector Current (IC) at 25°C | 20 A | 20 A | 20 A | 20 A |
| Saturation Voltage (VCE(sat)) | 1.25 V typical | 1.25 V typical | 1.5 V typical | 1.3 V typical |
| Fall Time (tf) | 60 ns | 60 ns | 50 ns | 70 ns |
| Integrated Diode | Yes | Yes | Yes | Yes |
| Automotive Grade | Yes (AEC-Q101) | No | No | No |
Wichtigste Unterscheidungsmerkmale
- Automotive-grade qualification (AEC-Q101) (vs. STGD20N45LZ)
- Lower saturation voltage than IKW20N60H3 (vs. IKW20N60H3)
- Integrated diode simplifies design (vs. NGB20N45CL)
Designhinweise
The STGD20N45LZAG dissipates up to 150W at 25°C case temperature. In a typical application with VCE(sat)=1.25V and IC=20A, conduction losses are 25W. Switching losses add to this, so a heatsink or PCB copper area is essential. The D2PAK package has a thermal resistance of 1°C/W (junction-to-case), so a heatsink with thermal resistance below 0.8°C/W is recommended for continuous operation at 20A.
Place the gate driver as close to the gate pin as possible to minimize gate loop inductance. Use a gate resistor (typically 10-22 ohms) to control switching speed and reduce EMI. The collector and emitter traces should be wide and short to handle high currents and reduce parasitic inductance. The exposed pad (collector) should be soldered to a large copper area for heat dissipation.
Do not exceed the maximum gate-emitter voltage of ±20V. Use a gate clamp or zener diode to protect against overvoltage. Ensure the gate drive voltage is at least 15V to achieve low VCE(sat). Avoid operating the device beyond the SOA, especially during short-circuit conditions. Implement a desaturation protection circuit if the device is used in applications where short-circuit may occur.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics product page. AEC-Q101 qualified for automotive applications.
