STL24N60M6 - 24A, 600V N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STL24N60M6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STL24N60M6 Übersicht
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, enabling efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power management systems, including switch-mode power supplies, motor drives, and inverters, where they serve as the primary switching elements.
Key features of the STL24N60M6 include a low on-state resistance (RDS(on)) of typically 0.145 ohm at 10V gate drive, which minimizes conduction losses. The device also features a fast body diode with low reverse recovery charge, enhancing performance in bridge topologies. The MDmesh M6 technology provides an excellent figure of merit (FOM) combining low RDS(on) and low gate charge, making it suitable for high-frequency switching applications.
The STL24N60M6 utilizes ST's MDmesh M6 vertical structure, which reduces the specific on-resistance and improves switching performance compared to previous generations. The device has a gate charge (Qg) of typically 45 nC, enabling fast switching transitions and reduced driver losses. The PowerFLAT 8x8 HV package offers a low thermal resistance of 1.0 °C/W (junction-to-case), allowing efficient heat dissipation in high-power designs.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial motor drives. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, while the low RDS(on) ensures high efficiency in continuous conduction mode.
When designing with this device, ensure proper gate drive voltage (recommended 10V) to achieve the lowest RDS(on). Pay attention to the maximum junction temperature (150°C) and provide adequate heatsinking or PCB copper area for thermal management. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
Drop-in-Alternativen für STL24N60M6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STL24N60M2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL24N60M6-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL24N60M6-2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPP60R099P7
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FCH24N60N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL24N60M6 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 24 A |
| Continuous Drain Current (ID) at 100°C | 15 A |
| Pulsed Drain Current (IDM) | 96 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-State Resistance (RDS(on)) at VGS=10V | 0.145 ohm (typical) |
| Maximum On-State Resistance (RDS(on)) at VGS=10V | 0.175 ohm |
| Gate Charge (Qg) | 45 nC (typical) |
| Input Capacitance (Ciss) | 1900 pF (typical) |
| Output Capacitance (Coss) | 120 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 5 pF (typical) |
| Power Dissipation (PD) at 25°C | 150 W |
| Operating Junction Temperature (Tj) | -55°C to +150°C |
| Gehäuse | PowerFLAT 8x8 HV |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
STL24N60M6 Pin-Konfiguration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | D — Drain (exposed pad) |
Sicherer Arbeitsbereich
Typische Anwendungen
STL24N60M6 ist geeignet für 6 Anwendungs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Motor Drives, Solar Inverters, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STL24N60M6 is ideal for SMPS due to its 600V rating and low RDS(on) of 0.145 ohm, which reduces conduction losses. In a typical flyback or forward converter, the MOSFET switches at high frequency, and the low gate charge (45 nC) enables fast switching, improving efficiency. The PowerFLAT 8x8 HV package allows compact designs with adequate thermal management. Compared to older technologies, the M6 series offers a better figure of merit, making it suitable for high-efficiency power supplies in consumer and industrial applications.
Empfohlen
Power Factor Correction (PFC)
In PFC circuits, the STL24N60M6 operates in continuous conduction mode (CCM) or transition mode (TM). Its low RDS(on) minimizes conduction losses, while the fast body diode reduces reverse recovery losses. The 600V rating provides sufficient margin for universal input (85-265V AC) applications. The device's low gate charge simplifies the gate drive design, and the PowerFLAT package ensures low thermal resistance for reliable operation. PFC stages in power supplies benefit from the high efficiency and robustness of this MOSFET.
Empfohlen
LED Lighting Drivers
The STL24N60M6 is well-suited for LED drivers, especially in offline applications. Its 600V rating handles rectified mains voltage, and the low RDS(on) reduces power dissipation, improving overall driver efficiency. The fast switching capability allows for compact magnetic components. In a typical LED driver, the MOSFET switches in a buck or flyback topology, and the low gate charge enables high-frequency operation, reducing transformer size. The PowerFLAT package helps in thermal management, ensuring long LED lifetime.
Empfohlen
Industrial Motor Drives
In industrial motor drives, the STL24N60M6 is used in the inverter stage to convert DC to AC. Its 600V rating is suitable for 3-phase induction motors powered from rectified mains. The low RDS(on) minimizes conduction losses, and the fast body diode handles freewheeling currents efficiently. The device's ruggedness and wide SOA make it reliable for motor drive applications. The PowerFLAT package allows for high power density in variable frequency drives (VFDs).
Empfohlen
Solar Inverters
The STL24N60M6 is used in solar inverters for DC-AC conversion. Its 600V rating is suitable for photovoltaic systems with up to 400V DC input. The low RDS(on) reduces losses, improving the overall efficiency of the inverter. The fast switching capability enables high-frequency PWM, reducing the size of output filters. The device's thermal performance is critical in outdoor environments, and the PowerFLAT package with low thermal resistance helps maintain safe operating temperatures.
Empfohlen
Uninterruptible Power Supplies (UPS)
In UPS systems, the STL24N60M6 is used in the inverter and battery charger stages. Its 600V rating handles the DC bus voltage, and the low RDS(on) ensures high efficiency during battery operation. The fast switching reduces losses in the inverter, extending battery life. The device's robustness and thermal performance are essential for reliable UPS operation. The PowerFLAT package allows for compact UPS designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STL24N60M6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STL24N60M2 | IPP60R099P7 | FCH24N60N |
|---|---|---|---|---|
| Package | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 24 A | 24 A | 24 A | 24 A |
| On-State Resistance (RDS(on)) typical | 0.145 ohm | 0.19 ohm | 0.099 ohm | 0.16 ohm |
| Gate Charge (Qg) typical | 45 nC | 50 nC | 40 nC | 48 nC |
| Power Dissipation (PD) at 25°C | 150 W | 150 W | 150 W | 150 W |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Wichtigste Unterscheidungsmerkmale
- Lower RDS(on) compared to previous M2 series (vs. STL24N60M2)
- Better figure of merit (FOM) than cross-brand alternatives (vs. FCH24N60N)
- Fast body diode for bridge topologies (vs. IPP60R099P7)
Designhinweise
The STL24N60M6 has a maximum power dissipation of 150W at 25°C case temperature. With a junction-to-case thermal resistance of 1.0 °C/W, a heatsink or adequate PCB copper area is essential to keep the junction temperature below 150°C. For continuous operation at high currents, calculate the power loss (I^2 * RDS(on)) and ensure the thermal resistance of the system is sufficient.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-inductance path for the drain and source connections. The exposed pad should be soldered to a large copper area for heat dissipation. Add a 10-ohm gate resistor to dampen ringing if needed.
Do not exceed the maximum gate-source voltage of ±25V. Ensure the gate drive voltage is at least 10V to achieve the lowest RDS(on). Avoid operating in the linear region for extended periods, as this can cause excessive power dissipation. Also, consider the body diode reverse recovery in bridge topologies; the STL24N60M6 has a fast body diode, but external snubbers may be needed for high dV/dt.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive use, consider AEC-Q101 qualified devices.
