STL20N60M6 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STL20N60M6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STL20N60M6 Übersicht
What is a Power MOSFET? A Power MOSFET is a type of metal-oxide-semiconductor field-effect transistor specifically designed to handle significant power levels. It operates as a voltage-controlled switch, where the gate voltage controls the flow of current between the drain and source. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and other high-current applications. They are part of the broader family of power semiconductors, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements.
Key features of the STL20N60M6 include a very low on-resistance (RDS(on)) of 0.19Ω typical, which minimizes conduction losses, and a fast body diode with low reverse recovery charge (Qrr) for improved efficiency in bridge topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding industrial environments. The PowerFLAT 8x8 HV package has a low thermal resistance (RthJA) of 62.5°C/W, enabling effective heat dissipation without the need for bulky heatsinks in many applications.
Technically, the MDmesh M6 series utilizes a proprietary strip layout technology that reduces on-resistance and gate charge, resulting in lower switching losses. The device features a typical gate charge (Qg) of 45nC, which allows for efficient gate driving. The output capacitance (Coss) is optimized to reduce ringing and EMI in high-frequency switching circuits. The STL20N60M6 is designed to meet the requirements of modern power supply designs, offering a good balance between conduction and switching performance.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. In these applications, the low on-resistance and fast switching characteristics contribute to higher overall system efficiency and reduced thermal stress. The device is also suitable for motor control and industrial automation where robust performance is required.
When designing with the STL20N60M6, it is important to consider proper gate drive voltage (typically 10V to 15V) to ensure fully enhanced operation. Additionally, adequate PCB layout with low-inductance paths and proper thermal management, such as using the exposed pad for heat sinking, is critical to maximize performance and reliability. The device is RoHS compliant and halogen-free, aligning with environmental regulations.
Drop-in-Alternativen für STL20N60M6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STL20N60M6-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL20N60M2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL20N60M3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPP60R099CP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FCP20N60
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STL20N60M6 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A |
| Continuous Drain Current (ID) at 100°C | 12 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) typical | 0.19 Ω |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V |
| Total Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1900 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) at 25°C | 200 W |
| Operating Junction Temperature (Tj) | -55°C to +150°C |
| Gehäuse | PowerFLAT 8x8 HV |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
STL20N60M6 Pin-Konfiguration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
| Pin 9 | S — Source |
| Pin 10 | S — Source |
| Pin 11 | S — Source |
| Pin 12 | S — Source |
Sicherer Arbeitsbereich
Typische Anwendungen
STL20N60M6 ist geeignet für 6 Anwendungs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Motor Control, Industrial Power Supplies.
Switch-Mode Power Supplies (SMPS)
The STL20N60M6 is ideal for SMPS due to its low on-resistance and fast switching. In a typical flyback or forward converter, the MOSFET acts as the primary switch, controlling the transfer of energy from the input to the output. The low RDS(on) of 0.19Ω minimizes conduction losses, while the low gate charge (45nC) reduces switching losses, enabling high-frequency operation and smaller magnetic components. The 600V breakdown voltage provides ample margin for off-line applications. Proper snubber circuits and gate drive design are essential to minimize ringing and EMI.
Empfohlen
Power Factor Correction (PFC)
In PFC circuits, the STL20N60M6 is used as the boost switch to shape the input current waveform. Its low on-resistance and fast body diode reduce losses in continuous conduction mode (CCM). The device's low reverse recovery charge (Qrr) minimizes switching losses during turn-on. The PowerFLAT 8x8 HV package allows for efficient heat dissipation, which is critical in high-power PFC stages. The 600V rating ensures safe operation in universal input voltage ranges (85-265VAC).
Empfohlen
LED Lighting Drivers
The STL20N60M6 is well-suited for LED drivers, particularly in offline constant-current topologies. Its high breakdown voltage and low on-resistance enable efficient power conversion from mains voltage to LED current. The fast switching speed allows for compact magnetic designs, reducing the overall size of the driver. The device's thermal performance ensures reliable operation in enclosed luminaires. In a typical buck or flyback LED driver, the MOSFET switches at high frequency, and the low gate charge simplifies the gate drive circuit.
Empfohlen
Solar Inverters
In solar inverters, the STL20N60M6 is used in DC-DC boost converters and inverter stages. Its low on-resistance reduces conduction losses, improving overall system efficiency. The 600V rating is suitable for photovoltaic panel voltages up to 1000V in some configurations. The fast body diode is beneficial for synchronous rectification and reduces losses in bridge topologies. The device's wide temperature range and robust design make it suitable for outdoor installations.
Empfohlen
Motor Control
The STL20N60M6 can be used in motor control applications, such as variable frequency drives (VFDs) and brushless DC (BLDC) motor controllers. Its high current rating and low on-resistance allow efficient switching of motor phases. The fast switching speed reduces switching losses, enabling higher PWM frequencies for smoother motor operation. The device's ruggedness ensures reliable operation under inductive load conditions. Proper gate drive and protection circuits are necessary to handle back-EMF and overcurrent conditions.
Empfohlen
Industrial Power Supplies
The STL20N60M6 is suitable for industrial power supplies requiring high efficiency and reliability. Its low on-resistance and fast switching reduce power losses, improving overall efficiency. The 600V rating provides a safety margin for industrial mains voltages. The PowerFLAT 8x8 HV package allows for compact designs, which is important in space-constrained industrial equipment. The device's wide temperature range and robust construction ensure long-term reliability in harsh environments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STL20N60M6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STL20N60M6-1 | STL20N60M2 | STL20N60M3 | IPP60R099CP | FCP20N60 |
|---|---|---|---|---|---|---|
| Package | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A | 20 A | 20 A | 20 A | 20 A | 20 A |
| On-Resistance (RDS(on)) typical | 0.19 Ω | 0.19 Ω | 0.25 Ω | 0.25 Ω | 0.099 Ω | 0.19 Ω |
| Total Gate Charge (Qg) | 45 nC | 45 nC | 50 nC | 50 nC | 60 nC | 45 nC |
| Power Dissipation (PD) at 25°C | 200 W | 200 W | 200 W | 200 W | 200 W | 200 W |
| Operating Junction Temperature (Tj) | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Wichtigste Unterscheidungsmerkmale
- Lower on-resistance compared to M2/M3 series (vs. STL20N60M2)
- Lower gate charge for faster switching (vs. STL20N60M3)
- Same package and pinout as M2/M3 series (vs. STL20N60M2)
Designhinweise
The STL20N60M6 has a maximum power dissipation of 200W at 25°C case temperature. In high-power applications, ensure adequate heat sinking by soldering the exposed pad to a large copper area on the PCB. The thermal resistance from junction to ambient (RthJA) is 62.5°C/W, so for a 20W dissipation, the junction temperature rise is 1250°C, which is unacceptable. Use a heatsink or forced air cooling to keep the junction temperature below 150°C.
For optimal switching performance, place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-inductance path for the drain and source connections. Add a gate resistor (typically 10Ω) to control switching speed and reduce EMI. Ensure the PCB layout provides a low-impedance path for the high di/dt currents.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate clamp or zener diode to protect against overvoltage. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. In bridge topologies, the body diode's reverse recovery can cause voltage spikes; consider using a snubber circuit or a MOSFET with a faster body diode.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive, use AEC-Q101 qualified variants.
