UCC21530DWKR - 4A/6A Dual-Channel Isolated Gate Driver | TI
Teilenummer: UCC21530DWKR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.89 | $28,90 |
| 100 | $2.55 | $255,00 |
| 500 | $2.21 | $1.105,00 |
| 1.000 | $1.95 | $1.950,00 |
UCC21530DWKR Übersicht
A galvanically isolated gate driver is a power-semiconductor interface IC that translates low-voltage PWM control signals from a digital controller (MCU, DSP, or FPGA) into the high-voltage, high-current drive required to switch the gate of a power transistor. It belongs to the broader hierarchy of gate driver -> power management IC -> signal conditioning -> power conversion. Reinforced isolation, defined by IEC 60747-17, provides a 5.7 kVRMS working voltage plus transient overvoltage protection between the low-voltage primary side and the high-voltage secondary side, eliminating the need for optocouplers or external bootstrap circuits in many topologies.
Key features include 4 A peak source / 6 A peak sink drive capability, 5.7 kVRMS reinforced isolation per UL 1577, 8 V to 18 V VDD supply range (VDDA/VDDB up to 25 V), programmable dead-time control via the DT pin, an enable pin for simultaneous shutdown of both outputs, internal functional isolation between the two secondary sides, and an extended -40C to +125C operating temperature range. The wide drive-voltage capability supports SiC MOSFET turn-on enhancement and IGBT gate-charge requirements across many power classes.
The device employs TI's capacitive isolation technology using an internal SiO2 dielectric barrier, achieving CMTI of at least 125 V/ns and supporting switching frequencies up to 5 MHz. Fail-safe logic ensures that primary-side faults force both outputs LOW, preventing catastrophic half-bridge shoot-through conditions in motor drive and inverter applications.
Typical applications include solar inverters, industrial motor drives (AC induction, BLDC, PMSM), telecom DC/DC converters using DAB/PSFB topologies, EV charging stations (OBC and DC fast charge), SiC FET-based high-frequency converters, and Class D audio amplifiers. The reinforced isolation barrier also allows direct drive of 600 V / 1200 V / 1700 V class power stages without additional isolation.
When designing with the UCC21530DWKR, choose decoupling capacitors of at least 1 uF low-ESR ceramic on each VDD rail placed within 5 mm of the IC pins. The DT pin resistor sets dead time and must be selected based on the specific power-switch turn-off delay to prevent cross-conduction; consult the datasheet's dead-time programming section for the recommended resistor range.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout notes not consolidated on the manufacturer datasheet front page, providing engineers with a single decision-ready reference.
Drop-in-Alternativen für UCC21530DWKR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit UCC21530DWKR (gleiche Bauform und Footprint) – abweichend in Common-Mode Transient Immunity (CMTI), Package, Number of Channels, Channel-to-Channel Spacing, Enable Pin.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
UCC21530QDWKRQ1
✅ Drop-In✓ Auf Lager
$1.0664 / Stück
Datenblatt ansehen →UCC21530DWK
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC21222QDRQ1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8273AB-IM
✅ Drop-In✓ Auf Lager
$1.62 / Stück
Datenblatt ansehen →SI8273ABD
✅ Drop-In✓ Auf Lager
$3.05 / Stück
Datenblatt ansehen →UCC21530DWKR Grenzwerte & elektrische Eigenschaften
| Driver Configuration | Half-Bridge (dual independent outputs) |
| Number of Channels | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Voltage (RMS) | 5.7 kVRMS (reinforced, per UL 1577) |
| Common-Mode Transient Immunity (CMTI) | >=125 V/ns (minimum) |
| Channel-to-Channel Spacing | 3.3 mm |
| Maximum Switching Frequency | 5 MHz |
| VDD Supply Range (logic side) | 3 V to 5.5 V |
| VDDA / VDDB Range (drive side) | 8 V to 18 V (up to 25 V per TI part details) |
| Dead-Time Control | Programmable via DT pin resistor |
| Enable-Pin | Yes (EN, active-high; pulls LOW to disable both outputs) |
| Input Logic Compatibility | CMOS / TTL |
| Betriebstemperaturbereich | -40C to +125C |
| Gehäuse | 14-SOIC (DWK) with 3.3 mm channel spacing |
| Montageart | Surface Mount |
| Approximate Datasheet Length | 47 pages (per third-party datasheet archive) |
| RoHS-Status | Compliant |
UCC21530DWKR Pin-Konfiguration
| Pin 1 | VCC1 — Primary-side logic supply (3 V to 5.5 V) |
| Pin 2 | INA — Channel A PWM input |
| Pin 3 | INB — Channel B PWM input |
| Pin 4 | GND1 — Primary-side ground |
| Pin 5 | DT — Dead-time programming pin (resistor to GND) |
| Pin 6 | EN — Enable pin (active-high; LOW disables both outputs) |
| Pin 7 | VDDA — Channel A driver supply (8 V to 18 V, up to 25 V) |
| Pin 8 | OUTA — Channel A gate drive output |
| Pin 9 | OUTB — Channel B gate drive output |
| Pin 10 | VDDB — Channel B driver supply (8 V to 18 V, up to 25 V) |
| Pin 11 | GND2 — Secondary-side ground (isolated) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | GND2 — Secondary-side ground (isolated) |
| Pin 14 | GND1 — Primary-side ground |
Typische Anwendungen
UCC21530DWKR ist geeignet für 6 Anwendungs: Solar Inverter / PV Power Stage, Industrial Motor Drive (AC/BLDC/PMSM), EV Charging Station (OBC and DCFC), Telecom DC/DC Converter (DAB / PSFB), Class D Audio Amplifier Output Stage, SiC MOSFET High-Frequency Converter.
Solar Inverter / PV Power Stage
The UCC21530DWKR drives IGBTs in 600 V / 1200 V class photovoltaic inverters, where its 5.7 kVRMS reinforced isolation eliminates optocoupler chains and its 4 A source / 6 A sink current enables fast switching of 50 A-200 A modules. The 125 V/ns CMTI rating prevents false triggering during high dv/dt transitions inherent to SiC and IGBT switching, while the 3.3 mm channel-to-channel spacing supports 800 V boost-stage designs. The programmable DT pin allows independent tuning of dead time for the high-side and low-side switches in the H4/H5 bridge. Unlike bootstrap gate drivers, this part provides true isolated drive for both high and low sides from a single 14-SOIC IC, reducing BOM count and PCB area.
Empfohlen
Industrial Motor Drive (AC/BLDC/PMSM)
For three-phase industrial motor drives spanning 230 V to 480 V AC bus voltages, the UCC21530DWKR drives six IGBTs or SiC MOSFETs in the inverter stage, providing reinforced isolation between the low-voltage DSP/MCU control domain and the high-voltage power domain. The 4 A source current achieves fast turn-on of large gate-charge devices, while the 6 A sink current supports fast turn-off to limit switching losses. The internal fail-safe logic ensures that any primary-side fault forces both outputs LOW, preventing shoot-through that could destroy the bridge. The device supports switching frequencies up to 5 MHz for high-FET-count multi-level ANPC converters used in servo drives.
Empfohlen
EV Charging Station (OBC and DCFC)
The UCC21530DWKR is widely deployed in on-board chargers (OBC) and DC fast charger power stages requiring reinforced isolation for 800 V battery systems. Its asymmetric 4 A/6 A drive is well-matched to SiC MOSFET modules in totem-pole PFC and DAB topologies, where the DT pin allows precise dead-time control to achieve soft-switching and high efficiency (>97%). The 5.7 kVRMS isolation withstands the high transient stresses of EV charging events and meets IEC 61851-1 reinforced isolation requirements. The -40C to +125C operating range covers the underhood thermal envelope for automotive power electronics.
Empfohlen
Telecom DC/DC Converter (DAB / PSFB)
In 48 V to 400 V telecom DC/DC converters using Dual Active Bridge (DAB) or Phase-Shifted Full-Bridge (PSFB) topologies, the UCC21530DWKR drives the primary-side full-bridge MOSFETs with reinforced isolation between the primary HV bus and the secondary LV control. Its 5 MHz switching capability supports the high-frequency magnetics required to shrink converter footprint for 5G base stations. The wide 8 V to 18 V VDD range accommodates both 12 V and 15 V drive rails common in telecom designs, while the EN pin enables coordinated startup sequencing across parallel converter modules.
Empfohlen
Class D Audio Amplifier Output Stage
For high-power Class D audio amplifiers (>500 W), the UCC21530DWKR drives the output bridge MOSFETs with reinforced isolation from the analog input stage. The 4 A source / 6 A sink capability handles the high peak gate charge of large output MOSFETs at switching frequencies up to 500 kHz typical for audio. The high CMTI prevents common-mode noise from coupling into the audio path, while the symmetric propagation delay between channels preserves audio phase integrity. Designers can use the DT pin to implement a small dead time that limits shoot-through without compromising audio THD+N.
Empfohlen
SiC MOSFET High-Frequency Converter
The UCC21530DWKR is a strong match for SiC MOSFET-based DC/DC and AC/DC converters operating at 100 kHz to 1 MHz, where its 5 MHz max frequency and high CMTI are essential. The asymmetric 4 A source / 6 A sink drive enables use of negative turn-off voltage for SiC to prevent spurious turn-on due to high dv/dt. The DT pin allows dead-time programming down to a few nanoseconds, critical for high-frequency SiC half-bridge designs. The 14-SOIC DWK package provides 3.3 mm channel spacing supporting 800 V bus designs with appropriate PCB clearance.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für UCC21530DWKR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | UCC21530QDWKRQ1 | UCC21530DWK | UCC21222QDRQ1 | SI8273AB-IM | SI8273ABD |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Silicon Labs | Silicon Labs |
| Package | 14-SOIC (DWK) | 14-SOIC (DWK) - same | 14-SOIC (DWK) - same | 14-SOIC (DWK) - same | 14-SOIC narrow body - same footprint | 14-SOIC narrow body - same footprint |
| Peak Source Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A | 6 A | 6 A | 4 A | 4 A |
| Isolation Voltage | 5.7 kVRMS (reinforced) | 5.7 kVRMS (reinforced) | 5.7 kVRMS (reinforced) | 3 kVRMS (basic) | 2.5 kVRMS (reinforced) | 2.5 kVRMS (reinforced) |
| CMTI | >=125 V/ns | >=125 V/ns | >=125 V/ns | >=100 V/ns | >=100 V/ns | >=100 V/ns |
| Dead-Time Control | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin |
| Automotive Grade | No | Yes (AEC-Q100) | No | Yes (AEC-Q100) | No (industrial) | No (industrial) |
Wichtigste Unterscheidungsmerkmale
- Reinforced 5.7 kVRMS isolation in SOIC-14 (DWK) package (vs. UCC21222QDRQ1)
- Asymmetric 4 A source / 6 A sink drive (vs. SI8273AB-IM)
- Programmable dead time in a SOIC-14 isolated driver (vs. UCC21530QDWKRQ1 (automotive variant))
Designhinweise
Place decoupling capacitors (1 uF ceramic minimum on VCC1, VDDA, VDDB) within 5 mm of the IC pins with wide, short traces. Keep the primary-side ground (GND1) and secondary-side ground (GND2) physically separate and connected only at a single point to maintain isolation barrier integrity. The 14-SOIC DWK package provides 3.3 mm channel-to-channel creepage, which is sufficient for 800 V bus designs with appropriate PCB under-board cleaning.
The asymmetric 4 A source / 6 A sink drive current requires adequate VDDA/VDDB bulk capacitance to handle peak gate charge without voltage droop. For 1000 nC total gate-charge SiC MOSFETs at 100 kHz, calculate average drive power as P_drive = Q_g * V_gs * f_sw, which can exceed 1 W per channel. Choose a VDDA/VDDB bulk capacitor rated for 1.5x the peak current to maintain regulation.
Do not leave the EN pin floating; either tie it to VCC1 through a 100 kOhm pull-up or drive it explicitly. Floating EN pins can cause unpredictable enable/disable behavior and reduce CMTI margin in noisy environments. Additionally, ensure DT resistor values stay within the datasheet's recommended range (typically 1 kOhm to 100 kOhm) - values outside this range may produce undefined dead time or oscillator instability.
The 14-SOIC DWK package has moderate thermal performance; at full 4 A/6 A switching into 1000 nC gate charge at 1 MHz, internal dissipation can reach 1-2 W. Provide a copper pour of at least 100 mm squared on the VDDA/VDDB plane to keep junction temperature rise below 30C. For continuous full-power operation in ambient temperatures above 85C, consider the wider-body DWK-16 variant or external heatsink.
Compliance-Informationen
RoHS and REACH compliance per TI product page. AEC-Q100 not applicable for this industrial variant - choose UCC21530QDWKRQ1 for automotive-grade designs.
