UCC21530DWKR - 4A/6A Dual-Channel Isolated Gate Driver | TI
MPN: UCC21530DWKR ✓ Hoạt độngUCC21530DWKR Tóm tắt
A galvanically isolated gate driver is a power-semiconductor interface IC that translates low-voltage PWM control signals from a digital controller (MCU, DSP, or FPGA) into the high-voltage, high-current drive required to switch the gate of a power transistor. It belongs to the broader hierarchy of gate driver -> power management IC -> signal conditioning -> power conversion. Reinforced isolation, defined by IEC 60747-17, provides a 5.7 kVRMS working voltage plus transient overvoltage protection between the low-voltage primary side and the high-voltage secondary side, eliminating the need for optocouplers or external bootstrap circuits in many topologies.
Key features include 4 A peak source / 6 A peak sink drive capability, 5.7 kVRMS reinforced isolation per UL 1577, 8 V to 18 V VDD supply range (VDDA/VDDB up to 25 V), programmable dead-time control via the DT pin, an enable pin for simultaneous shutdown of both outputs, internal functional isolation between the two secondary sides, and an extended -40C to +125C operating temperature range. The wide drive-voltage capability supports SiC MOSFET turn-on enhancement and IGBT gate-charge requirements across many power classes.
The device employs TI's capacitive isolation technology using an internal SiO2 dielectric barrier, achieving CMTI of at least 125 V/ns and supporting switching frequencies up to 5 MHz. Fail-safe logic ensures that primary-side faults force both outputs LOW, preventing catastrophic half-bridge shoot-through conditions in motor drive and inverter applications.
Typical applications include solar inverters, industrial motor drives (AC induction, BLDC, PMSM), telecom DC/DC converters using DAB/PSFB topologies, EV charging stations (OBC and DC fast charge), SiC FET-based high-frequency converters, and Class D audio amplifiers. The reinforced isolation barrier also allows direct drive of 600 V / 1200 V / 1700 V class power stages without additional isolation.
When designing with the UCC21530DWKR, choose decoupling capacitors of at least 1 uF low-ESR ceramic on each VDD rail placed within 5 mm of the IC pins. The DT pin resistor sets dead time and must be selected based on the specific power-switch turn-off delay to prevent cross-conduction; consult the datasheet's dead-time programming section for the recommended resistor range.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout notes not consolidated on the manufacturer datasheet front page, providing engineers with a single decision-ready reference.
Bộ thay thế dễ dàng lắp đặt cho UCC21530DWKR — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với UCC21530DWKR (cùng hình factor và footprint) — khác nhau ở Common-Mode Transient Immunity (CMTI), Package, Number of Channels, Channel-to-Channel Spacing, Enable Pin.
UCC21530QDWKRQ1
✅ Drop-In✓ Còn hàng
$1.0664 / Đơn vị
Xem tài liệu →UCC21530DWK
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
UCC21222QDRQ1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SI8273AB-IM
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →SI8273ABD
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →UCC21530DWKR Tỷ lệ tối đa & tính chất điện
| Driver Configuration | Half-Bridge (dual independent outputs) |
| Number of Channels | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Voltage (RMS) | 5.7 kVRMS (reinforced, per UL 1577) |
| Common-Mode Transient Immunity (CMTI) | >=125 V/ns (minimum) |
| Channel-to-Channel Spacing | 3.3 mm |
| Maximum Switching Frequency | 5 MHz |
| VDD Supply Range (logic side) | 3 V to 5.5 V |
| VDDA / VDDB Range (drive side) | 8 V to 18 V (up to 25 V per TI part details) |
| Dead-Time Control | Programmable via DT pin resistor |
| N Nap kích hoạt | Yes (EN, active-high; pulls LOW to disable both outputs) |
| Input Logic Compatibility | CMOS / TTL |
| Khoảng nhiệt độ hoạt động | -40C to +125C |
| Hộp | 14-SOIC (DWK) with 3.3 mm channel spacing |
| Kiểu lắp đặt | Surface Mount |
| Approximate Datasheet Length | 47 pages (per third-party datasheet archive) |
| Trạng thái RoHS | Compliant |
Cấu hình chân UCC21530DWKR
| Chân 1 | VCC1 — Primary-side logic supply (3 V to 5.5 V) |
| Chân 2 | INA — Channel A PWM input |
| Chân 3 | INB — Channel B PWM input |
| Chân 4 | GND1 — Primary-side ground |
| Chân 5 | DT — Dead-time programming pin (resistor to GND) |
| Chân 6 | EN — Enable pin (active-high; LOW disables both outputs) |
| Chân 7 | VDDA — Channel A driver supply (8 V to 18 V, up to 25 V) |
| Chân 8 | OUTA — Channel A gate drive output |
| Chân 9 | OUTB — Channel B gate drive output |
| Chân 10 | VDDB — Channel B driver supply (8 V to 18 V, up to 25 V) |
| Chân 11 | GND2 — Secondary-side ground (isolated) |
| Chân 12 | NC — Not connected (per datasheet) |
| Chân 13 | GND2 — Secondary-side ground (isolated) |
| Chân 14 | GND1 — Primary-side ground |
Ứng dụng tiêu biểu
UCC21530DWKR phù hợp cho 6 Áp dụngs: Solar Inverter / PV Power Stage, Industrial Motor Drive (AC/BLDC/PMSM), EV Charging Station (OBC and DCFC), Telecom DC/DC Converter (DAB / PSFB), Class D Audio Amplifier Output Stage, SiC MOSFET High-Frequency Converter.
Solar Inverter / PV Power Stage
The UCC21530DWKR drives IGBTs in 600 V / 1200 V class photovoltaic inverters, where its 5.7 kVRMS reinforced isolation eliminates optocoupler chains and its 4 A source / 6 A sink current enables fast switching of 50 A-200 A modules. The 125 V/ns CMTI rating prevents false triggering during high dv/dt transitions inherent to SiC and IGBT switching, while the 3.3 mm channel-to-channel spacing supports 800 V boost-stage designs. The programmable DT pin allows independent tuning of dead time for the high-side and low-side switches in the H4/H5 bridge. Unlike bootstrap gate drivers, this part provides true isolated drive for both high and low sides from a single 14-SOIC IC, reducing BOM count and PCB area.
Được đề xuất
Industrial Motor Drive (AC/BLDC/PMSM)
For three-phase industrial motor drives spanning 230 V to 480 V AC bus voltages, the UCC21530DWKR drives six IGBTs or SiC MOSFETs in the inverter stage, providing reinforced isolation between the low-voltage DSP/MCU control domain and the high-voltage power domain. The 4 A source current achieves fast turn-on of large gate-charge devices, while the 6 A sink current supports fast turn-off to limit switching losses. The internal fail-safe logic ensures that any primary-side fault forces both outputs LOW, preventing shoot-through that could destroy the bridge. The device supports switching frequencies up to 5 MHz for high-FET-count multi-level ANPC converters used in servo drives.
Được đề xuất
EV Charging Station (OBC and DCFC)
The UCC21530DWKR is widely deployed in on-board chargers (OBC) and DC fast charger power stages requiring reinforced isolation for 800 V battery systems. Its asymmetric 4 A/6 A drive is well-matched to SiC MOSFET modules in totem-pole PFC and DAB topologies, where the DT pin allows precise dead-time control to achieve soft-switching and high efficiency (>97%). The 5.7 kVRMS isolation withstands the high transient stresses of EV charging events and meets IEC 61851-1 reinforced isolation requirements. The -40C to +125C operating range covers the underhood thermal envelope for automotive power electronics.
Được đề xuất
Telecom DC/DC Converter (DAB / PSFB)
In 48 V to 400 V telecom DC/DC converters using Dual Active Bridge (DAB) or Phase-Shifted Full-Bridge (PSFB) topologies, the UCC21530DWKR drives the primary-side full-bridge MOSFETs with reinforced isolation between the primary HV bus and the secondary LV control. Its 5 MHz switching capability supports the high-frequency magnetics required to shrink converter footprint for 5G base stations. The wide 8 V to 18 V VDD range accommodates both 12 V and 15 V drive rails common in telecom designs, while the EN pin enables coordinated startup sequencing across parallel converter modules.
Được đề xuất
Class D Audio Amplifier Output Stage
For high-power Class D audio amplifiers (>500 W), the UCC21530DWKR drives the output bridge MOSFETs with reinforced isolation from the analog input stage. The 4 A source / 6 A sink capability handles the high peak gate charge of large output MOSFETs at switching frequencies up to 500 kHz typical for audio. The high CMTI prevents common-mode noise from coupling into the audio path, while the symmetric propagation delay between channels preserves audio phase integrity. Designers can use the DT pin to implement a small dead time that limits shoot-through without compromising audio THD+N.
Được đề xuất
SiC MOSFET High-Frequency Converter
The UCC21530DWKR is a strong match for SiC MOSFET-based DC/DC and AC/DC converters operating at 100 kHz to 1 MHz, where its 5 MHz max frequency and high CMTI are essential. The asymmetric 4 A source / 6 A sink drive enables use of negative turn-off voltage for SiC to prevent spurious turn-on due to high dv/dt. The DT pin allows dead-time programming down to a few nanoseconds, critical for high-frequency SiC half-bridge designs. The 14-SOIC DWK package provides 3.3 mm channel spacing supporting 800 V bus designs with appropriate PCB clearance.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho UCC21530DWKR — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | UCC21530QDWKRQ1 | UCC21530DWK | UCC21222QDRQ1 | SI8273AB-IM | SI8273ABD |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Silicon Labs | Silicon Labs |
| Package | 14-SOIC (DWK) | 14-SOIC (DWK) - same | 14-SOIC (DWK) - same | 14-SOIC (DWK) - same | 14-SOIC narrow body - same footprint | 14-SOIC narrow body - same footprint |
| Peak Source Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A | 6 A | 6 A | 4 A | 4 A |
| Isolation Voltage | 5.7 kVRMS (reinforced) | 5.7 kVRMS (reinforced) | 5.7 kVRMS (reinforced) | 3 kVRMS (basic) | 2.5 kVRMS (reinforced) | 2.5 kVRMS (reinforced) |
| CMTI | >=125 V/ns | >=125 V/ns | >=125 V/ns | >=100 V/ns | >=100 V/ns | >=100 V/ns |
| Dead-Time Control | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin | Programmable via DT pin |
| Automotive Grade | No | Yes (AEC-Q100) | No | Yes (AEC-Q100) | No (industrial) | No (industrial) |
Bảo phân biệt quan trọng
- Reinforced 5.7 kVRMS isolation in SOIC-14 (DWK) package (vsUCC21222QDRQ1)
- Asymmetric 4 A source / 6 A sink drive (vsSI8273AB-IM)
- Programmable dead time in a SOIC-14 isolated driver (vsUCC21530QDWKRQ1 (automotive variant))
Ghi chú thiết kế
Place decoupling capacitors (1 uF ceramic minimum on VCC1, VDDA, VDDB) within 5 mm of the IC pins with wide, short traces. Keep the primary-side ground (GND1) and secondary-side ground (GND2) physically separate and connected only at a single point to maintain isolation barrier integrity. The 14-SOIC DWK package provides 3.3 mm channel-to-channel creepage, which is sufficient for 800 V bus designs with appropriate PCB under-board cleaning.
The asymmetric 4 A source / 6 A sink drive current requires adequate VDDA/VDDB bulk capacitance to handle peak gate charge without voltage droop. For 1000 nC total gate-charge SiC MOSFETs at 100 kHz, calculate average drive power as P_drive = Q_g * V_gs * f_sw, which can exceed 1 W per channel. Choose a VDDA/VDDB bulk capacitor rated for 1.5x the peak current to maintain regulation.
Do not leave the EN pin floating; either tie it to VCC1 through a 100 kOhm pull-up or drive it explicitly. Floating EN pins can cause unpredictable enable/disable behavior and reduce CMTI margin in noisy environments. Additionally, ensure DT resistor values stay within the datasheet's recommended range (typically 1 kOhm to 100 kOhm) - values outside this range may produce undefined dead time or oscillator instability.
The 14-SOIC DWK package has moderate thermal performance; at full 4 A/6 A switching into 1000 nC gate charge at 1 MHz, internal dissipation can reach 1-2 W. Provide a copper pour of at least 100 mm squared on the VDDA/VDDB plane to keep junction temperature rise below 30C. For continuous full-power operation in ambient temperatures above 85C, consider the wider-body DWK-16 variant or external heatsink.
Thông tin tuân thủ
RoHS and REACH compliance per TI product page. AEC-Q100 not applicable for this industrial variant - choose UCC21530QDWKRQ1 for automotive-grade designs.
