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BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
The Infineon BSZ900N20NS3GATMA1 is a 200V N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated for 15.2A continuous drain current (Tc) and 62.5W power dissipation (Tc) in a surface-mount PG-TSDSON-8 (TDSON-8) package. It targets high-efficiency switching applications with a typical RDS(on) of 77 mΩ at VGS = 10 V, making it one of the lowest on-resistance 200V parts in its footprint class. A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts power by rapidly toggling between low-resistance (on) and high-resistance (off) states. Within the power-semiconductor hierarchy it sits below IGBTs and above signal FETs, and within a switching power supply it typically performs either the high-side switch, low-side synchronous rectifier, or both. The OptiMOS 3 family specifically optimizes the figure of merit (FOM = RDS(on) × Qg) for 100V-300V rails, balancing conduction loss against switching loss in hard-switched topologies. Key features of the BSZ900N20NS3GATMA1 include 200V VDS, 15.2A continuous ID at 25°C case temperature, 77 mΩ RDS(on) max at VGS = 10 V, integrated ESD protection, and a logic-level compatible gate drive threshold. The TDSON-8 FL package exposes the drain tab for direct PCB cooling, providing a typical RthJA of 50 C/W on a standard 1 oz copper 1 sq inch pad — sufficient for the 62.5W Tc rating without an external heatsink in typical 48V-rail applications. The OptiMOS 3 cell architecture uses a trench-gate structure with a 200V-rated epitaxial layer, achieving low specific on-resistance while maintaining avalanche ruggedness. The part is characterized for both continuous-conduction and zero-voltage-switching (ZVS) operation, and its low Qrr supports use as a synchronous rectifier in 48V telecom bus converters, where reverse-recovery loss dominates at high switching frequencies (typically 100-300 kHz). Typical applications include synchronous rectification in 48V systems, isolated and non-isolated DC-DC converters (full-bridge, half-bridge, and active-clamp forward topologies), uninterruptible power supplies (UPS), motor-drive inverters for DC motors, and solar micro-inverters. The 200V rating provides 30% headroom above standard 48V and 60V telecom and industrial bus voltages, allowing safe operation under transient spikes. When designing with this device, ensure the gate-driver supply swings at least 10V for full RDS(on) rating, and place the gate-drive loop area minimal to avoid ringing. The exposed pad (drain) must be soldered to a sufficiently large copper pour (≥1 sq inch) to achieve the rated thermal performance; otherwise the device will derate well below 62.5W. This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-13, and practical design notes not found in the manufacturer datasheet.
BT134-600D,127 - 600V 4A Logic-Level TRIAC SOT-82 | WeEn
The WeEn Semiconductors BT134-600D,127 is a planar passivated, very sensitive gate, four-quadrant logic-level TRIAC rated at 600 V off-state (VDRM) and 4 A RMS on-state current (IT(RMS)), housed in a through-hole SOT-82 (SOT-82-3 / TO-126 variant) plastic package with three leads. Designed for direct logic-interface triggering, it features a maximum gate trigger voltage VGT of 1.5 V at 10 mA IGT, enabling direct drive from microcontrollers, optocouplers, and low-voltage logic outputs without external driver stages. A TRIAC (TRIode for Alternating Current) is a bidirectional semiconductor switch belonging to the thyristor family. Internally equivalent to two back-to-back SCRs with a shared gate, a TRIAC conducts in both halves of the AC waveform once triggered, making it the workhorse device for low-to-medium-power AC load control. Within the broader semiconductor taxonomy, the TRIAC sits as a sub-category of thyristors, which are themselves members of the power-management discrete-semiconductor family used wherever AC mains must be switched or phase-controlled. The BT134 series targets sub-10 A applications where sensitive-gate triggering simplifies interface design. Key specifications include 4 A continuous RMS on-state current, 27 A non-repetitive surge current (ITSM) for half-cycle transients, 600 V repetitive peak off-state voltage, 1.5 V maximum gate trigger voltage, 10 mA maximum gate trigger current, and 5 W maximum power dissipation. The planar passivated glass junction construction provides long-term stability and high dv/dt immunity, while the SOT-82 through-hole package offers robust mechanical mounting suitable for PCB designs and clip-mount heatsinks in appliance and industrial control environments. Typical applications include low-power AC lamp dimmers, fan motor speed controllers, solenoid drivers, and small appliance heater controls. The logic-level gate sensitivity allows direct microcontroller interfacing in solid-state relay (SSR) input stages, eliminating the need for gate-driver transistors or pulse transformers. Its four-quadrant triggering capability ensures reliable operation in phase-control circuits regardless of load polarity or trigger mode (I, II, III, IV). A primary design consideration is thermal management: at full 4 A RMS conduction, total power dissipation reaches approximately 5 W, requiring the SOT-82 tab to be soldered to a minimum 50 mm x 50 mm copper land or a clip-on heatsink to maintain junction temperature below 125 degrees C. A snubber RC network (typically 100 ohm + 100 nF) across MT1-MT2 is recommended for inductive loads to prevent false triggering from dv/dt transients. This page synthesizes distributor pricing, SOT-82 drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
BT136-600D,127 - 4A 600V Sensitive Gate TRIAC | WeEn Semiconductors
The WeEn Semiconductors BT136-600D,127 is a planar passivated four-quadrant sensitive-gate TRIAC rated at 600 V blocking voltage (VDRM) and 4 A RMS on-state current (IT(RMS)), housed in a 3-pin TO-220AB through-hole package (SOT78 / SC-46). The "D" suffix denotes a very sensitive gate with 10 mA maximum gate trigger current (IGT) in all four quadrants, plus 1 V peak gate trigger voltage (VGT) and 5 W power dissipation, making it ideal for low-power logic-level control of AC loads. A TRIAC (triode for alternating current) is a bidirectional thyristor that conducts in both halves of an AC waveform, effectively functioning as two SCRs wired in anti-parallel within a single die. It belongs to the thyristor family within discrete power semiconductors, used wherever AC mains must be switched or phase-controlled by a low-power control signal. TRIACs sit in the hierarchy: thyristor -> discrete semiconductor -> power device. The four-quadrant symmetric gating of the "D" series enables the same low gate drive to fire the device in Quadrants I, II, III, and IV, simplifying MCU-driven phase-control and zero-cross switching designs. Key specifications include 600 V repetitive peak off-state voltage (VDRM), 4 A RMS on-state current (IT(RMS)), 25 A non-repetitive surge current (ITSM), 10 mA maximum gate trigger current (IGT), 1 V maximum gate trigger voltage (VGT), and 5 W power dissipation (PG(AV)). The TO-220AB package exposes a metal tab that doubles as the main terminal (MT2) and serves as a heatsink mounting interface. Planar passivated die construction yields stable blocking characteristics and long-term reliability under thermal cycling. Typical applications include AC lamp dimmers (leading-edge phase control), fan and small motor speed regulators, solid-state relays, heater control, and general-purpose AC switching in white goods. Logic-level IGT allows direct drive from microcontroller GPIO pins, eliminating the need for a dedicated gate driver circuit.
BTA16-600B - 16A 600V Standard TRIAC | STMicroelectronics
The STMicroelectronics BTA16-600B is a 16 A standard TRIAC rated at 600 V repetitive peak off-state voltage, supplied in an insulated TO-220AB (BTA) package for general-purpose AC power switching. As part of the ST BTA/BTB16 glass-passivated PNPN family, it is engineered for applications where high surge current capability is required. A TRIAC (triode for alternating current) is a three-terminal bidirectional thyristor that conducts current in both directions once triggered by a gate pulse, making it the foundational switching device of the thyristor family for AC phase control. In the power-control hierarchy, the TRIAC sits alongside the SCR and AC switch, enabling direct switching of AC mains loads with a single semiconductor rather than back-to-back SCRs. Key features include a 16 A RMS on-state current rating, 600 V blocking capability suitable for 230 VAC and 120 VAC mains, and the fully insulated TO-220AB package, which allows mounting directly to a grounded heatsink without an external isolation pad, improving thermal performance and safety. The glass-passivated die construction provides robust surge immunity. The BTA16-600B is a standard (not snubberless) TRIAC with a gate sensitivity class denoted by the B suffix. Designers trigger it via negative or positive gate current relative to A1 using optocouplers or direct drive circuits. Four-quadrant triggering supports conventional phase-control topologies. Typical applications include static relays, heating regulation, AC motor control, light dimmers, and general ON/OFF mains switching in appliances and industrial equipment. A key design consideration: standard TRIACs require RC snubber networks when driving inductive loads such as motors, because the snubberless W variants (e.g., BTA16-600BW) trade commutation capability for noise immunity; verify gate sensitivity against your drive circuit. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet, as of 2026-09-10.
BTA16-600BWRG - 600V 16A Snubberless TRIAC | STMicroelectronics
The STMicroelectronics BTA16-600BWRG is a Snubberless TRIAC (alternistor) rated for 600 V repetitive peak off-state voltage (VDRM) and 16 A RMS on-state current, housed in an insulated through-hole TO-220AB package. It is designed for general purpose mains power AC switching and ON/OFF control functions. A TRIAC is a three-terminal bidirectional thyristor that conducts current in either direction once triggered by a small gate current, making it the core switching element in AC power control. Within the power semiconductor hierarchy, the TRIAC sits alongside SCRs and AC switches as a member of the thyristor family, and the BTA16-600BWRG targets medium-current AC switching in the 16 A class. Key features include the Snubberless (3Q) commutation capability, which provides very high dI/dt commutation performance without requiring an external RC snubber network, and low thermal resistance achieved through clip bonding technology. The insulated BTA construction uses a low thermal resistance ceramic pad to electrically isolate the tab from the silicon, allowing direct mounting to a grounded heatsink. The BTA series is UL1557 certified. Architecturally, the Snubberless BWRG grade is engineered for applications with demanding commutation conditions, such as inductive loads and motor control, where standard 4Q TRIACs would require snubber networks to prevent false re-triggering. Clip bonding reduces thermal resistance between the die and the package, improving current handling and junction temperature margins compared to wire-bonded alternatives. Typical applications include AC motor speed control, resistive and inductive heater regulation, solid-state relays, light dimmers for inductive loads, and home appliance power switching on 110/230 VAC mains. The 600 V rating provides ample margin for 230 VAC lines with transient excursions. Design-wise, choose an adequate heatsink based on on-state power dissipation (approximately 1.55 V x IT average), and respect the 50 mA gate trigger current requirement when sizing the gate drive. Estimate junction temperature using the TO-220 thermal resistance with the ceramic isolation accounted for. This page synthesizes distributor pricing, drop-in alternatives within the BTA16 family, and practical design notes not consolidated in the manufacturer datasheet.
BTA425Y-800BT - 25A 800V 3Q Hi-Com Triac, TO-220AB | WeEn
The WeEn Semiconductors BTA425Y-800BT is a planar passivated high-commutation three-quadrant (3Q) Triac in an internally insulated SOT78D (TO-220AB) plastic package, rated for 800 V (VDRM) and 25 A RMS on-state current. The series-BT commutation design allows the device to switch the full RMS current at the maximum rated junction temperature (Tj max = 150 °C) without a snubber circuit, simplifying gate drive and reducing BOM cost in high-temperature designs. The 3Q (three-quadrant) triggering architecture suppresses spurious triggering in quadrant IV, making the part robust in noisy AC line environments where inductive or back-EMF transients are common. A Triac is a bidirectional thyristor that integrates two SCR structures in anti-parallel within a single die, allowing AC load control with a single gate terminal. Triacs sit within the thyristor family -> power semiconductors -> discrete semiconductors. Three-quadrant (3Q) Triacs are an evolution of the classic four-quadrant (4Q) Triac: they retain triggering in quadrants I (MT2+, gate+), II (MT2+, gate-) and III (MT2-, gate+), but deliberately disable quadrant IV (MT2-, gate-), which is the operating region most susceptible to false triggering from high dV/dt or commutating dI/dt on AC mains. Snubberless 3Q parts are widely deployed in motor drives, solid-state relays, heating regulators and AC phase-control dimmers. Key features of the BTA425Y-800BT include 800 V repetitive peak off-state voltage (VDRM), 25 A RMS on-state current (IT(RMS)), a high static dV/dt rating, a non-insulated tab variant, and planar passivated die technology for stable leakage and high-temperature operation. The device is suitable for high static and dynamic dV/dt and high dI/dt circuits, and operates across the standard -40 °C to +150 °C junction-temperature range demanded by industrial motor and heater applications. The BTA425Y-800BT is part of WeEn's BT series, characterized by the same die and identical TO-220AB (SOT78D) pinout across voltage grades. Voltage classes in the family include 600 V (BTA425Y-600B), 800 V (BTA425Y-800B) and 1000 V (BTA425Y-1000B), giving designers a scalable platform where PCB layout can stay constant while only the VDRM rating changes. The 800 V grade covers universal 230 V AC mains with generous transient margin. Typical applications include solid-state relays (SSR), AC motor soft-start and reversing controls, heating regulation (HVAC, induction cookers, soldering stations), professional phase-angle dimmers, and universal-motor speed controllers in power tools and white goods. The 25 A RMS rating also enables direct drive of small compressors and pumps without an interposing relay. When designing with this part, observe the thermal resistance of the TO-220AB package and provide an adequate heatsink for currents above ~10 A continuous. Place the gate resistor (typically 100 Ω to 330 Ω) close to the MT1/G pin to limit di/dt into the gate, and keep the gate-MT1 loop short to minimize noise pickup that could otherwise cause unwanted firing. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not consolidated in the WeEn datasheet alone.
BTA425Y-800BT - 800V 25A 3Q Hi-Com Triac | WeEn Semiconductors
The WeEn Semiconductors BTA425Y-800BT is a planar passivated, high-commutation three-quadrant (3Q) Hi-Com Triac rated at 800 V blocking voltage and 25 A on-state RMS current, housed in a TO-220AB (SOT78D) internally insulated plastic package. It is engineered for AC switching applications where high static and dynamic dV/dt combined with high dI/dt can occur, and the three-quadrant triggering architecture eliminates the need for a fourth-quadrant trigger to improve noise immunity. A TRIAC (triode for alternating current) is a bidirectional thyristor that conducts current in both AC half-cycles from a single gate signal, making it the workhorse of low-frequency AC power control. Triacs sit in the thyristor family (thyristor > TRIAC > 3Q Hi-Com Triac) and the broader discrete semiconductor hierarchy. The 'Hi-Com' designation refers to high-commutation variants optimized to withstand fast voltage transitions (high dV/dt) at line-frequency zero-crossings without parasitic retriggering. Key features include 800 V repetitive peak off-state voltage (VDRM), 25 A RMS on-state current (IT(RMS)), a non-insulated tab package variant option, and a gate trigger current optimized for microcontroller-compatible logic-level triggering. The TO-220AB package offers a low thermal resistance path to a clip-on or PCB-mounted heatsink, enabling continuous high-current switching in motor and heater loads. The BTA prefix denotes an isolated tab; the BTY/BTB prefix variants share the same silicon. Technically, the device uses a planar passivated die structure with an internal ceramic-isolated mounting base, providing 2500 V RMS isolation between the metal tab and the heat sink pad. The 3Q Hi-Com architecture suppresses commutating dV/dt failures common in inductive loads (motors, transformers, solenoids), allowing designers to omit snubber networks in many applications and reduce BOM cost. Typical applications include AC motor speed controls, solid-state relays (SSRs), heating regulation, light dimmers, and general-purpose AC static switches in industrial white goods, HVAC controls, and home appliances. The 25 A rating makes it suitable for direct switching of 1-3 HP universal motors and up to 5 kW resistive heater loads on 230 V mains. When designing with this device, derate the on-state current by at least 25% when using a small heatsink, and ensure the gate drive provides sufficient pulse current (>50 mA) at the desired firing angle. Avoid mounting the tab to a grounded heatsink without an insulating pad if the package variant is non-isolated; the BTA-insulated variant of the BTA425Y simplifies single-screw mounting. This page synthesizes the WeEn datasheet (Rev.03, 19 February 2024), live distributor pricing from DigiKey/Mouser/Octopart, drop-in alternative cross-references, and design guidance beyond what is found on the manufacturer product page.
BU931T - 15A, 400V NPN Power Darlington Transistor | STMicroelectronics
The BU931T is an NPN power Darlington transistor manufactured by STMicroelectronics, designed for high-current switching applications. It features a collector-emitter voltage (VCEO) of 400V, a continuous collector current (IC) of 15A, and a peak collector current of 30A. The device is housed in a TO-220 package, providing excellent thermal performance for power dissipation up to 125W. With a DC current gain (hFE) of 500 minimum at 10A, it offers high current amplification, making it suitable for motor control, power supplies, and automotive ignition systems. A Darlington transistor is a compound structure consisting of two bipolar junction transistors (BJTs) connected in a Darlington pair configuration, where the emitter of the first transistor drives the base of the second. This configuration provides extremely high current gain, typically in the range of 1000 to 10000, compared to a single BJT. Darlington transistors are widely used in high-current switching applications where a low base current is required to control a large collector current. They are part of the broader family of power transistors, which also includes MOSFETs and IGBTs, and are essential components in power electronics for amplification and switching. Key features of the BU931T include a collector-emitter saturation voltage (VCE(sat)) of 2.0V maximum at IC=10A, ensuring low power loss during conduction. The device also offers a fast switching speed with a fall time of 1.5 microseconds, making it suitable for high-frequency applications up to 10 kHz. The integrated base-emitter resistor and base-emitter diode enhance reliability by preventing spurious turn-on due to leakage currents. The TO-220 package is lead-free and RoHS compliant, meeting modern environmental standards. Technically, the BU931T utilizes a triple-diffused planar process, providing robust avalanche energy handling and a wide safe operating area (SOA). The device can withstand a collector-emitter breakdown voltage (BVCEO) of 400V and a collector-base voltage (VCBO) of 500V, ensuring high voltage robustness. The thermal resistance from junction to case (RthJC) is 1.0°C/W, allowing efficient heat transfer to an external heatsink. The operating junction temperature range is -65°C to +150°C, making it suitable for harsh environments. Typical applications include motor control circuits, switching power supplies, automotive ignition systems, and solenoid drivers. In motor control, the BU931T can switch DC motors up to 15A, providing reliable on/off control. In automotive ignition, its high voltage and current ratings ensure dependable performance in demanding conditions. The device is also used in welding equipment and battery chargers where high current switching is required. When designing with the BU931T, ensure adequate base drive current to achieve low saturation voltage. A base current of at least 1/250 of the collector current is recommended. Additionally, use a suitable heatsink to maintain junction temperature below 150°C, especially at high current levels. Proper snubber circuits may be required to protect against inductive load transients.
BU941ZT - 15A, 350V NPN Power Transistor | STMicroelectronics
The STMicroelectronics BU941ZT is a high-voltage, high-current NPN power transistor designed for demanding switching and linear applications. It delivers a continuous collector current of 15A and supports a collector-emitter voltage of 350V, making it suitable for power management, motor control, and industrial systems. The device is housed in a TO-220 package, which provides excellent thermal performance and is widely used in through-hole PCB designs. A power transistor is a three-terminal semiconductor device used to amplify or switch electronic signals and electrical power. In the hierarchy of power electronics, the BU941ZT is a bipolar junction transistor (BJT), which falls under the category of discrete semiconductors, specifically power transistors. BJTs are current-controlled devices where a small base current controls a larger collector current, enabling efficient power regulation and switching in circuits such as power supplies, inverters, and motor drivers. Key features of the BU941ZT include a high collector-emitter voltage rating of 350V, a continuous collector current of 15A, and a low saturation voltage that minimizes power loss during conduction. The device also offers a high DC current gain (hFE) for efficient base drive, and a fast switching speed suitable for applications up to several kilohertz. The TO-220 package includes a metal tab for heatsinking, allowing the transistor to dissipate significant power when properly mounted. Technically, the BU941ZT is fabricated using STMicroelectronics' advanced bipolar process, which ensures high ruggedness and reliability under stressful operating conditions. The device features a wide safe operating area (SOA) and built-in protection against overcurrent and overtemperature, making it robust for industrial environments. Its low saturation voltage (VCE(sat)) of typically 1.5V at 15A reduces conduction losses, improving overall system efficiency. Typical applications include switch-mode power supplies (SMPS), motor control circuits, inverters, and battery chargers. In an SMPS, the BU941ZT can be used as the main switching element, handling high voltages and currents while maintaining low losses. In motor control, it drives inductive loads with fast switching and high current capability. The device is also suitable for linear regulators and audio amplifiers where high power handling is required. When designing with the BU941ZT, ensure adequate base drive current to fully saturate the transistor and minimize power dissipation. Use a proper heatsink or thermal pad to manage the heat generated during operation, especially at high currents. Additionally, consider adding a flyback diode across inductive loads to protect the transistor from voltage spikes during switching.
BUK7Y2R0-40H - 40V, 2.0mΩ N-Channel MOSFET LFPAK56 | Nexperia
The Nexperia BUK7Y2R0-40H is an automotive-qualified N-channel MOSFET built on Nexperia's Trench 9 superjunction technology, housed in the robust LFPAK56 (SOT-669) power package. It is rated for 40 V drain-source voltage, 2.0 mΩ typical on-resistance, and continuous drain current up to 120 A, making it one of the lowest-RDS(on) parts in its class. What is an N-channel power MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a positive gate-source voltage is applied. Power MOSFETs sit within the broader category of discrete semiconductors, then field-effect transistors, then power transistors, and are the workhorse switches in DC-DC converters, motor drivers, and load management. The LFPAK56 package is a low-profile, clip-bonded surface-mount package optimized for high-current, low-thermal-resistance applications. Key features of the BUK7Y2R0-40H include a typical RDS(on) of just 2.0 mΩ at VGS = 10 V, an avalanche-rated single-pulse drain current, and a maximum junction temperature of 175°C suitable for automotive under-hood environments. Trench 9 superjunction geometry delivers an excellent figure-of-merit (FOM = RDS(on) × QG), minimizing both conduction and switching losses. Technically, the device uses a strip-cell Trench 9 layout that drastically reduces cell pitch while maintaining low gate charge (QG) and output capacitance (Coss). The copper-clip LFPAK56 bond replaces wire bonds, lowering source inductance and improving thermal performance (Rth(j-mb) typically around 0.9°C/W). The standard-level gate threshold (VGS(th) ~2-3 V) means it can be driven directly from logic-level signals at VGS = 4.5 V, simplifying gate driver design. Typical applications for the BUK7Y2R0-40H include 12 V automotive load switching, electric power steering (EPS), braking and chassis systems, body control modules, and high-current DC-DC converter primary-side switches. Its AEC-Q101 qualification makes it a fit for safety-relevant automotive electronics where reliability under thermal stress is mandatory. Designers should pay attention to gate-drive voltage: 10 V VGS gives the lowest RDS(on), but logic-level 4.5 V operation is acceptable at the cost of slightly higher on-resistance. SOA verification is essential for linear-mode or in-rush applications. This page synthesizes distributor pricing, drop-in alternatives, AEC-Q101 qualification details, and practical LFPAK56 PCB layout notes that are not consolidated on the Nexperia product page alone.
BUK9240-100A,118 - 100V 33A N-Ch TrenchMOS Logic Level FET | Nexperia
The Nexperia BUK9240-100A,118 is a logic-level N-channel enhancement-mode power MOSFET built on TrenchMOS technology, rated at 100 V VDS, 33 A continuous drain current (at TC), and 114 W power dissipation (at TC), housed in a surface-mount DPAK (SOT-428) package. Designed for high-current switching in thermally demanding environments, it features an ultra-low on-state resistance of approximately 33 mOhm at VGS = 10 V, enabling reduced conduction losses and higher system efficiency. The part is supplied on tape-and-reel (suffix ",118") and is qualified to AEC-Q101 for automotive critical applications. What is a logic-level power MOSFET? A logic-level MOSFET is an enhancement-mode N-channel FET whose gate threshold voltage (typically 1 V to 2.5 V) is low enough to be driven directly by 3.3 V or 5 V microcontroller GPIO pins, eliminating the need for a dedicated gate-driver IC. Power MOSFETs occupy the broader semiconductor category hierarchy: discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> logic-level MOSFETs. TrenchMOS technology (a Nexperia/NXP trademark) reduces RDS(on) per unit silicon area by using a vertical trench gate structure instead of a planar gate, yielding very low on-state resistance in a small DPAK footprint. Key features of the BUK9240-100A include 175 degrees C maximum junction temperature, AEC-Q101 automotive qualification, low conduction losses due to 33 mOhm RDS(on), and suitability for logic-level gate drive sources (VGS(th) typically 1.5 V to 2.5 V). The device supports repetitive avalanche operation and is rated for high inrush current loads. TrenchMOS process geometry reduces gate charge (Qg) compared to older planar MOSFETs of similar RDS(on), enabling faster switching and lower drive losses. Architecturally, the part uses an N-channel enhancement structure: with VGS = 0 V the channel is off (normally-off device), and applying VGS greater than VGS(th) creates an inversion layer that conducts current from drain to source. The DPAK (TO-252 equivalent) package provides a low thermal-resistance path through the tab (typical Rth(j-a) around 50 C/W with proper PCB copper heatsink area, or around 1.5 C/W Rth(j-c) when mounted on a large heatsink). Compared with DPAK parts from competitors, the BUK9240-100A is positioned in the 100 V / 33 A sweet spot for 12 V and 24 V automotive subsystems. Typical applications include automotive transmission control, motor drives (DC brushed and small BLDC), solenoid and lamp drivers, high-side and low-side switching in 12 V/24 V automotive ECU power distribution, and ultra-high-performance power switching in industrial relay-replacement circuits. The 100 V rating provides ample derating margin for 24 V load-dump transients (which can reach 35 V to 40 V on automotive 24 V systems). When designing with this MOSFET, pay attention to gate-drive voltage: at VGS = 5 V the RDS(on) rises significantly compared to VGS = 10 V (typical logic-level MOSFET behavior), so always confirm the actual RDS(on) at the planned VGS. A small gate-source resistor (10 kOhm to 100 kOhm) is recommended to prevent accidental turn-on from dv/dt-induced Miller current in half-bridge topologies. This page synthesizes real-time distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical PCB layout guidance that is not duplicated in the stock datasheet.
BUK9M85-60E - 60V 85mΩ N-Ch Logic Level MOSFET LFPAK33 | Nexperia
The Nexperia BUK9M85-60E is a logic-level N-channel enhancement-mode MOSFET rated at 60 V drain-source voltage and 85 mΩ maximum on-resistance, housed in an LFPAK33 (Power33) surface-mount package. It uses Nexperia's TrenchMOS technology and is qualified to the AEC-Q101 standard for high-performance automotive applications, with a continuous drain current rating of approximately 12.8 A at Tc and power dissipation up to 31 W. A logic-level MOSFET is a power MOSFET whose gate-threshold voltage and full-on gate-drive voltage are designed to be compatible directly with low-voltage logic outputs (3.3 V or 5 V microcontrollers, GPIO pins, gate-driver ICs) without requiring a charge pump or bootstrap. Within the power-semiconductor taxonomy, the BUK9M85-60E sits in the N-channel enhancement-mode MOSFET family, which is itself a subclass of power MOSFETs and ultimately a member of the broader discrete-semiconductor hierarchy. Nexperia's LFPAK33 (Power33) family represents the company's high-density, thermally-efficient surface-mount answer to the older DPAK footprint, delivering much lower thermal resistance in a similarly compact board area. Key features include 85 mΩ maximum R_DS(on) at V_GS = 10 V, 60 V V_DSS rating for 12 V and 24 V automotive bus systems, logic-level V_GS(th) for direct MCU drive, an integrated source-connected Schottky-like body diode, and a Kelvin-source LFPAK33 lead frame that reduces gate-loop inductance. These specifications deliver very low conduction loss at moderate currents while keeping switching transients under control. The device architecture pairs a trench gate with a Nexperia-designed source-connected clip and exposed-drain LFPAK33 pad, producing both low R_DS(on) and excellent thermal performance - approximately 4 °C/W junction-to-case. The 4-pin LFPAK33 footprint also provides a true Kelvin source connection at pin 4, decoupling the gate-drive return path from the high-current source path and significantly reducing gate-bounce and ringing. Typical applications include automotive 12 V and 24 V load switching (e.g., LED drivers, solenoid control, motor drivers), power-OR-ing and reverse-polarity protection, DC-DC converter low-side switches, hot-swap circuits, and general-purpose logic-controlled switching in industrial and consumer systems. The AEC-Q101 qualification makes it especially suited to under-hood and body-electronics modules where reliability is critical. When designing with this part, ensure that V_GS drive rises fully above the logic-level threshold (~2.1 V) and that the LFPAK33 thermal pad receives a sufficiently large copper pour on the PCB - particularly important at continuous currents approaching 10 A, where conduction losses dominate. The LFPAK33 footprint is also mechanically robust against vibration, an advantage in automotive environments.
BUX48 - 400V 15A 175W NPN Power Transistor | STMicroelectronics
The STMicroelectronics BUX48 is a high-voltage fast-switching NPN bipolar power transistor rated 400V, 15A continuous collector current and 175W power dissipation, housed in a TO-3 metal can chassis-mount package. Per the ST datasheet (CD00176575), the BUX48 and BUX48A are multi-epitaxial mesa NPN devices intended for switching and industrial applications powered from single- and three-phase mains. A high-voltage NPN power BJT is a three-terminal semiconductor amplifier and switch in the broader hierarchy: bipolar junction transistor -> power transistor -> discrete power semiconductor. Unlike MOSFETs, BJTs are current-controlled devices, and the multi-epitaxial mesa construction of the BUX48 family gives it a combination of high breakdown voltage and fast switching speed that was specifically engineered for off-line switch-mode power supplies. Key features include a 400V collector-emitter breakdown rating, 15A maximum collector current, 175W total power dissipation at a properly heatsunk case, and fast switching characteristics suited to SMPS half-bridge and forward converter stages. The metal TO-3 package provides very low thermal resistance from junction to case and excellent mechanical robustness for chassis mounting. Technically, the device uses multi-epitaxial mesa technology to achieve high collector-emitter voltage capability while preserving fast turn-off. This makes it well matched to hard-switching and quasi-resonant converter topologies operating directly from rectified 110V/230V mains, where 400V-class blocking voltage is required. Typical applications include offline switch-mode power supplies, flyback and forward converters, motor control and industrial power switching, and high-voltage inverter stages for single- and three-phase mains-powered equipment. Design consideration: because the collector is electrically connected to the TO-3 metal can, the case must be isolated from the chassis heatsink with a mica washer and insulated bushings, and base drive must supply enough forced beta to keep VCE(sat) low at full load. This page adds distributor pricing, drop-in alternatives, comparison tables, and practical design notes not found in the manufacturer datasheet.
BUZ71A - 50V 13A N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics BUZ71A is an N-channel 50V, 13A, 0.1 ohm (typical RDS(on)) StripFET power MOSFET in a TO-220 through-hole package, rated for 40W power dissipation and 175C operating junction temperature with 100% avalanche testing. A power MOSFET is a voltage-controlled semiconductor switch that dominates the power-management layer of modern electronics. As an enhancement-mode N-channel device, it conducts when the gate is driven above the source and offers far higher switching speed and lower gate-drive power than bipolar transistors. Power MOSFETs sit within the broader hierarchy of discrete semiconductors: transistor family, field-effect transistor (FET) class, metal-oxide-semiconductor (MOS) technology, used wherever efficient load switching is required. Key features of the BUZ71A include STStripFET cell geometry for low on-state resistance (0.1 ohm typical), avalanche-rugged technology that is 100% avalanche energy tested for inductive-load robustness, high continuous current capability of 13A at 25C case temperature, and a maximum operating temperature of 175C. Older Intersil and Motorola second sources specify 0.120 ohm maximum RDS(on) at 13A, confirming parametric equivalence across vendors. The device uses an enhancement-mode silicon-gate vertical DMOS structure. The StripFET layout minimizes channel resistance and gate charge, enabling efficient switching in regulators and converters where both conduction and switching losses matter. Gate drive requirements are modest, allowing direct drive from logic-level circuitry with adequate voltage headroom. Typical applications include switching regulators, switching converters, motor drivers, relay and solenoid drivers, and high-power bipolar transistor driver stages - exactly the application list cited in the manufacturer datasheet. It also fits general-purpose DC-DC bricks and lighting ballasts. Design consideration: verify gate-drive amplitude against the gate threshold specification and add a gate series resistor to damp parasitic ringing; at 13A, even 0.1 ohm RDS(on) dissipates roughly 17W (estimated: I^2 x R = 13^2 x 0.1), so heatsinking on the TO-220 tab is essential at high duty cycles. This page synthesizes distributor pricing, cross-referenced drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BZT52B15-E3-18 - 15V 410mW ±2% SOD-123 Zener Diode | Vishay
The Vishay BZT52B15-E3-18 is a 15 V small-signal Zener diode with ±2% voltage tolerance, 410 mW power dissipation, and a compact SOD-123 surface-mount package. It is part of Vishay's BZT52B-Series graded according to the international E24 standard, offering nominal Zener voltages from 2.4 V to 75 V with specified test currents of 2.5 mA and 5 mA depending on the variant. A Zener diode is a specialized silicon pn-junction device engineered to operate in the reverse-breakdown region, where it maintains a nearly fixed cathode-to-anode voltage over a wide range of reverse currents. Diodes in the BZT52B family serve as low-power voltage references, voltage clamps, and over-voltage protectors, sitting within the discrete semiconductor hierarchy: Zener diode → diode → discrete semiconductor → electronic component. They are the workhorse building block of analog front-ends, MCU rails, and protection networks. The BZT52B15-E3-18 delivers a nominal 15 V reference with ±2% tolerance at the specified test current, 410 mW total power dissipation on the recommended 40 mm × 40 mm × 0.022 L pitch PCB footprint, and a low-leakage reverse current suitable for low-power applications. Its planar silicon construction provides stable temperature behavior and long-term reliability in commercial and industrial environments. Typical applications include voltage reference for ADCs and DACs, over-voltage protection for microcontroller I/O lines, precision regulated supplies, and signal clamping in sensor-conditioning circuits. Its SOD-123 outline allows direct substitution in tight PCB layouts where a 15 V rail must be derived locally without a switching regulator. When designing with this part, derate power linearly above 25 °C ambient and verify the dynamic Zener impedance at the actual operating current — Zener voltage shifts slightly with current and must be carefully tuned to the application. Place the diode close to the protected node and keep trace inductance short to maximize clamping effectiveness. This page synthesizes distributor stock and pricing from leading distributors (DigiKey, Mouser, Arrow, LCSC, TTI), pin-compatible drop-in alternatives from Vishay's own BZT52B family and cross-brand sources (Nexperia, MCC, Diotec), and practical design notes not found in the manufacturer datasheet alone.
BZT52C8V2LP - 8.2V 250mW Zener Diode, DFN1006-2 | Diodes Incorporated
The Diodes Incorporated BZT52C8V2LP is a surface-mount Zener diode rated at 8.2V nominal Zener voltage with ±6% tolerance and 250mW power dissipation, housed in an ultra-compact X1-DFN1006-2 (1.0mm x 0.6mm x 0.5mm) leadless package. The device uses planar die construction and is specified for automated assembly processes. A Zener diode is a specialized pn-junction diode engineered to operate in reverse breakdown at a precisely controlled voltage. Unlike a rectifier diode that is damaged by reverse breakdown, a Zener is designed to repeatedly clamp at its nominal Vz, making it the fundamental building block for voltage reference, voltage regulation, and over-voltage protection circuits. Within the broader semiconductor taxonomy, the BZT52C8V2LP belongs to the discrete semiconductor family, specifically the Zener diode sub-category, used as a low-power precision reference in space-constrained designs. Key electrical characteristics include a 8.2V nominal Zener voltage (Vz) at the standard test current, ±6% tolerance across operating conditions, a maximum forward voltage (Vf) of 900 mV at 10 mA, and a 250 mW continuous power dissipation rating. The X1-DFN1006-2 footprint enables placement in mobile phones, wearables, hearing aids, IoT sensors, and other miniaturized products where every square millimeter counts. The planar die construction provides stable breakdown characteristics and tight tolerance over temperature, while the leadless DFN package minimizes parasitic inductance - useful for transient suppression on data lines and low-voltage rails. Operating and storage temperature ranges span -55C to +150C, suiting both consumer and industrial environments. Typical applications include voltage clamping on low-voltage DC rails in portable devices, secondary protection on USB-C and HDMI data lines, precision reference for ADCs and DACs in mixed-signal ICs, and over-voltage protection on lithium-ion battery management systems. When designing with this device, derate power dissipation to 70 mW or less to keep junction temperature rise acceptable in the 0.5mm-tall DFN package. Always place the Zener directly across the protected node with the shortest possible trace to ground, since lead inductance can defeat clamping during fast transients. This page synthesizes distributor stock data, same-package drop-in alternatives, and PCB-level design notes that go beyond the manufacturer datasheet to support faster, more reliable sourcing decisions.
BZX585-B6V8 - 6.8V 300mW Zener Diode ±2% SOD-523 | Nexperia
The Nexperia BZX585-B6V8 is a low-power voltage regulator Zener diode housed in an ultra-small SOD-523 surface-mount plastic package, delivering a nominal Zener voltage of 6.8 V with a ±2% tolerance and a total power dissipation of 300 mW. It is part of the BZX585 series, which spans 37 nominal working voltages from 2.4 V to 75 V and is qualified to the normalized E24 (BZX585-B, ±2%) and E24 (BZX585-C, ±5%) tolerance ranges for precision voltage reference design. The SOD-523 footprint measures approximately 1.6 mm x 0.8 mm x 0.6 mm, making it one of the smallest Zener packages in volume production. A Zener diode is a specialized PN-junction diode engineered to operate in the reverse-breakdown (Zener) region, where the voltage across the device remains nearly constant over a wide range of reverse currents. This characteristic makes Zener diodes ideal as shunt voltage regulators, reference elements, and overvoltage protectors in analog and mixed-signal circuits. Within the broader semiconductor taxonomy, the BZX585-B6V8 sits at: Zener diode → voltage regulator diode → discrete semiconductor → diode → semiconductor device. Key features of the BZX585-B6V8 include a maximum working voltage tolerance of ±2% (E24 normalized), a non-repetitive peak reverse power dissipation rating suitable for transient clamping, and a low-leakage planar construction that minimizes standby current in battery-powered designs. The device is supplied on 8 mm tape and reel for high-speed automated pick-and-place assembly. The planar passivated die architecture yields stable Zener voltage across temperature and current, with a typical temperature coefficient consistent with the 5.6–6.8 V range where the Zener mechanism transitions from true Zener breakdown to avalanche multiplication. This range typically exhibits a near-zero temperature coefficient, making 6.8 V parts especially useful as low-drift references. Typical applications include portable and wearable device voltage references, USB and HDMI port protection, ADC/DAC reference rails, microcontroller supervisor rails, RF transceiver local-oscillator supply filtering, and automotive infotainment analog signal conditioning. The 6.8 V nominal is also close to common logic-interface clamping levels for transient voltage suppressor (TVS) duty in conjunction with series resistors. When designing with this part, observe the 300 mW total power dissipation limit and derate appropriately above 25 °C. A series resistor sized to limit Zener current to a few milliamps in regulation, plus a few milliamps of margin under worst-case input and load conditions, will keep the junction temperature within safe limits and ensure long-term stability. This page consolidates distributor pricing, drop-in alternatives, and design notes not typically aggregated on a single manufacturer datasheet, with the goal of accelerating BOM validation and second-source selection for production designs.
BZX84B10-7-F - 10V 300mW Precision Zener Diode | Diodes Inc
The Diodes Incorporated BZX84B10-7-F is a surface-mount precision Zener diode rated at 10 V nominal working voltage with ±2% tolerance and 350 mW power dissipation, housed in a 3-pin SOT-23 package. It belongs to the BZX84B series, which provides tight-tolerance voltage regulation in a compact SMD footprint. According to the Diodes Incorporated datasheet, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for both commercial and automotive-grade designs. A Zener diode is a specialized PN-junction diode engineered to operate in the reverse-breakdown (Zener) region, providing a stable reference voltage that is largely independent of current and temperature. Within the broader semiconductor taxonomy, Zener diodes sit under discrete semiconductors -> diodes -> voltage references. They are widely used as shunt regulators, voltage clamps, and precision reference elements where a low-cost, low-noise DC reference is required. Key features of the BZX84B10-7-F include a nominal Zener voltage of 10 V at 5 mA test current, ±2% voltage tolerance (BZX84B-series grade), low leakage current, and a maximum power dissipation of 350 mW on a standard FR-4 PCB. The SOT-23 package supports automated assembly processes and is fully RoHS compliant with halogen-free and antimony-free "Green Device" construction. Internally, the BZX84B10-7-F uses a diffused silicon PN junction optimized for low dynamic impedance at the rated test current, delivering tight voltage regulation across the specified operating range. The -7-F suffix denotes the 7-inch reel packaging format compatible with automated pick-and-place equipment, while the -F designation confirms lead-free, fully RoHS-compliant terminal finish. Typical applications include voltage reference circuits in analog front-ends, ADC/DAC reference rails, overvoltage protection in portable electronics, switching-mode power supply feedback networks, and automotive ECU sensor biasing. The wide tolerance grade and AEC-Q101 qualification make the part suitable for harsh-environment and safety-critical designs. When designing with this Zener, ensure the total power dissipation (P = VZ × IZ) stays below 350 mW derated for ambient temperature, and place a series resistor sized to limit the maximum current under worst-case input voltage conditions. The cathode is identified by the marked bar on the SOT-23 package. This page synthesizes distributor pricing, drop-in alternatives from cross-reference data, and practical design notes that go beyond the manufacturer datasheet to accelerate your component selection.
BZX84C5V1LT1G - 5.1V 250mW Zener Diode | onsemi
The onsemi BZX84C5V1LT1G is a single 5.1 V Zener voltage-regulator diode rated for 250 mW, with approximately ±6% voltage tolerance, supplied in a surface-mount SOT-23-3 (TO-236) package. It is designed to provide compact voltage regulation, clamping, or reference behavior where board area is limited. A Zener diode is a voltage-regulator diode that operates primarily in reverse breakdown. In that region, it maintains a relatively controlled voltage while diverting current through its specified power rating. The BZX84C5V1LT1G belongs to the broader discrete-semiconductor hierarchy: Zener diode, voltage regulator, and semiconductor protection or regulation device. Key verified features include a nominal Zener voltage of 5.1 V, a 250 mW device rating, and a tolerance of approximately ±6%. The part is packaged in SOT-23-3, also identified as TO-236 in the distributor data. Its compact footprint supports high-density printed circuit boards, including cellular phones, hand-held portables, and other compact electronic systems. The diode is intended for low-power regulation rather than high-current power conversion. When used as a clamp or reference element, the application must keep the operating current and dissipated power within the manufacturer’s specified limits. The SOT-23-3 package also requires attention to PCB copper area, thermal conditions, and assembly orientation because reverse-breakdown operation generates heat proportional to current. Typical applications include 5.1 V signal clamping, low-voltage reference generation, protection in compact consumer equipment, and auxiliary regulation in industrial or automotive electronic systems. It is particularly suitable when a small SOT-23 footprint and a nominal 5.1 V Zener voltage are more important than high-power handling. For reliable PCB implementation, identify the anode and cathode correctly, maintain the specified orientation, and provide a current path that allows the Zener to enter its intended operating region. Verify leakage, dynamic resistance, temperature behavior, and power dissipation against the manufacturer datasheet when precision regulation is required. This product-data page combines verified distributor specifications, official-series information, and engineering guidance for compact Zener-diode designs.
BZX884-C8V2 - 8.2V 250mW Zener Diode SOD882 | Nexperia
The Nexperia BZX884-C8V2 is a general-purpose Zener diode housed in an SOD882 (DFN1006-2) leadless ultra-small Surface-Mounted Device (SMD) plastic package, with a nominal Zener voltage of 8.2 V and ±5% tolerance (C-series suffix). It supports a total power dissipation of Ptot ≤ 250 mW and is intended for general-purpose voltage reference and clamping tasks where PCB real estate is at a premium. A Zener diode is a specialized silicon pn-junction diode engineered to operate in the reverse-breakdown region, where it maintains a nearly constant voltage across its terminals despite substantial current variation. Zeners sit in the discrete-semiconductor hierarchy as diodes -> semiconductor devices, and they function as single-junction voltage-reference elements within the broader power-management and signal-conditioning IC taxonomy. The BZX884-C8V2's 1.0 mm x 0.6 mm x 0.5 mm footprint occupies only about 1.17 mm² of board space, making it the functional equivalent of a SOT23 Zener at roughly one-third the footprint. Key features of the BZX884-C8V2 include a working-voltage range that covers the E24 standard 2.4 V to 75 V across the BZX884 family, ±5% voltage tolerance, and a low-leakage, ultra-small plastic package compatible with high-density SMT assembly lines. The non-repetitive peak reverse power dissipation and thermal behavior are characterized for general-purpose clamp and reference designs. Technically, the BZX884-C8V2 is fabricated using Nexperia's planar Zener process on a leadless SOD882 substrate. The diode exhibits the classic Zener-versus-avalanche transition behavior around 5.6 V; at 8.2 V the breakdown mechanism is dominantly avalanche, which gives a positive temperature coefficient on Vz and good stability for reference-rail applications. The hermetic leadless package also provides low parasitic inductance, making it usable as a sub-ns transient suppressor. Typical applications include voltage reference for ADCs and DACs in portable/wearable products, logic-level clamping on data lines (USB, HDMI, GPIO), overvoltage protection on low-power DC rails, handheld medical and IoT sensor boards, and any 8.2 V reference point in automotive and industrial subsystems. When designing with this part, choose series resistor values that keep Iz below the maximum rated and below to prevent failure, and respect the 250 mW Ptot limit at the chosen ambient temperature. This page synthesizes distributor pricing, drop-in BZX884 same-package alternatives, and practical design notes not found on a single distributor product page.
C3M0016120K - 1200V 16mΩ SiC MOSFET 115A TO-247-4 | Wolfspeed
The Wolfspeed C3M0016120K is a 1200 V, 16 mΩ, Industrial-qualified, N-Channel Silicon Carbide (SiC) power MOSFET in a TO-247-4 package with a Kelvin-source pin, delivering 115 A continuous drain current (Tc) and 556 W power dissipation (Tc). It is built on Wolfspeed's Gen 3 (C3M) planar SiC MOSFET technology, which combines a 1200 V blocking voltage with ultra-low on-resistance of 16 mΩ typical at 15 V gate drive. What is a SiC MOSFET? A Silicon Carbide MOSFET is a wide-bandgap (WBG) power transistor that operates like a silicon MOSFET but uses SiC as the semiconductor substrate. SiC's wider bandgap (3.26 eV vs 1.12 eV for Si) allows higher breakdown voltage, faster switching, and lower conduction loss per unit area, making SiC MOSFETs a subclass of power MOSFETs and a key member of the power semiconductor family used in high-efficiency switched-mode power conversion. Key features include a typical on-resistance of 16 mΩ at Vgs=15 V, a maximum continuous drain current of 115 A at Tc=25°C, an internally limited avalanche energy rating, a body diode with low reverse recovery charge (Qrr), and a maximum junction temperature of 175°C. The TO-247-4 package provides a Kelvin-source connection that decouples the gate-drive return path from the high-current source path, slashing gate ringing and improving switching loss figures. Architecturally, the device uses Wolfspeed's third-generation planar SiC process, which removes the JFET region pinch-off that limited earlier planar SiC parts. The result is a stable, robust RDS(on) over the full gate-drive range (12-18 V) and a positive temperature coefficient on resistance that supports easy paralleling in high-current modules. Typical applications include solar string inverters, EV onboard chargers and DC-DC converters, industrial motor drives, telecom rectifier stages, and induction heating. The 1200 V class is the sweet spot for 800 V EV traction buses and 1000 V solar arrays where legacy silicon IGBTs cannot meet switching-frequency targets. Design consideration: always use a dedicated gate driver with isolated 15 V/+/-5% output (per Wolfspeed Application Note PRD-04814) and place the gate-source resistor as close as possible to the Kelvin pin to exploit the TO-247-4 source-inductance reduction; otherwise you will lose the main switching-loss benefit of the 4-lead package. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
C3M0021120K - 1200V 21mOhm SiC MOSFET | Wolfspeed | TO-247-4
The Wolfspeed C3M0021120K is a 1200 V, 21 mOhm N-channel silicon carbide (SiC) power MOSFET rated for 100 A (at Tc) and 469 W (at Tc), supplied in a 4-pin TO-247-4 through-hole package with a separate Kelvin driver-source pin. A silicon carbide power MOSFET is a unipolar switching transistor built on a wide-bandgap (3.26 eV) semiconductor instead of conventional silicon. Within the power-management hierarchy, it sits under power transistor -> MOSFET -> wide-bandgap semiconductor devices, and its wide bandgap allows thinner, more heavily doped drift regions, yielding lower specific on-resistance, lower switching losses, and higher junction temperature capability than comparable silicon superjunction MOSFETs. The C3M0021120K uses Wolfspeed's 3rd-generation C3M planar SiC MOSFET technology, optimized for industrial power conversion. Key features include a 1200 V drain-source breakdown rating, 21 mOhm on-resistance for low conduction loss, and a Kelvin source connection that decouples the gate-drive return path from power-source inductance, dramatically reducing switching losses in hard-switched converters. The separate driver-source pin is the defining architectural advantage of the TO-247-4 (K) package. By eliminating common-source inductance from the gate loop, the device achieves faster switching transitions with less ringing, enabling higher converter efficiency and higher switching frequency, which shrinks magnetics and capacitors in the power stage. Typical applications include solar inverters and energy storage systems, UPS and server power supplies, motor drives and industrial motor control, and high-voltage DC-DC converters. These systems benefit directly from the 1200 V blocking capability and low conduction losses at high current. Designers should drive the gate with +15 V on / -4 V off levels per Wolfspeed recommendations and lay out the Kelvin return trace as short as possible to preserve the switching-loss benefit. This page synthesizes distributor data, drop-in alternative analysis, and practical design guidance not found in the manufacturer datasheet alone. Pricing shown is as of 2026-10-11.
C3M0080120D - 1200V 80mOhm SiC MOSFET, TO-247-3 | Wolfspeed
The Wolfspeed C3M0080120D is a 1200 V, 80 mOhm Silicon Carbide (SiC) N-Channel Enhancement Mode power MOSFET in a TO-247-3 through-hole package, rated for 36 A continuous drain current (Tc) and 192 W power dissipation (Tc). It uses Wolfspeed's third-generation (C3M) planar SiC MOSFET technology, delivering lower on-resistance per area, faster switching, and zero reverse recovery charge compared with silicon IGBTs and superjunction MOSFETs. A Silicon Carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor that switches high voltages and currents with far less loss than a silicon MOSFET or IGBT. Within the power-semiconductor taxonomy, SiC MOSFETs sit between silicon MOSFETs (limited to ~600-900 V practical breakdown) and emerging GaN HEMTs (typically <650 V). SiC is the dominant WBG technology for 1200 V-class traction, solar, and industrial drives, where switching frequencies of 50-200 kHz and junction temperatures of 175 C are routine. Key features of the C3M0080120D include an 80 mOhm typical Rds(on) at Vgs=15 V, a low gate charge (Qg typical values for the C3M family are in the tens of nC), an intrinsic body diode with negligible reverse recovery (Qrr), and a maximum operating junction temperature of 175 C. The TO-247-3 package provides a low thermal-resistance path and a standard through-hole footprint that drops into any 1200 V-class SiC design. Typical applications include EV onboard chargers and DC-DC converters, solar string inverters, industrial motor drives, telecom rectifiers, and solid-state circuit breakers. The C3M platform is designed for hard-switched and soft-switched topologies where its low switching loss and high-temperature tolerance reduce heatsink, magnetics, and cooling cost. When designing with the C3M0080120D, drive the gate at +15 V/-3 V to -5 V for best Rds(on) and immunity to parasitic turn-on; use a Kelvin-source TO-247 variant (C3M0080120J) if gate-loop inductance is a concern. Always derate to keep Tj below 150 C in hard-switched designs for long-term reliability.
CDBQR0230L - 30V 200mA Low-VF DFN Schottky | Comchip
The Comchip Technology CDBQR0230L is a surface-mount Schottky diode rated 30 V reverse voltage and 200 mA average forward current, packaged in a compact 0402 (SOD-923F equivalent) leadless DFN case. It is specified as a low forward voltage (Low VF) Schottky barrier diode, intended for small-signal switching, clamping, and rectification tasks in densely populated PCBs. The 0402 footprint occupies only 1.0 mm x 0.5 mm board area, enabling placement in space-constrained designs such as wearables, hearing aids, and portable instrumentation. A Schottky barrier diode is a majority-carrier semiconductor device formed by a metal-semiconductor junction. Unlike PN-junction diodes that suffer from a 0.6-0.7 V forward drop, Schottky diodes exhibit a much lower forward voltage (typically 0.3-0.5 V) and very fast switching because there is no minority-carrier charge storage. Within the broader discrete-semiconductor taxonomy, the CDBQR0230L sits as: Schottky diode -> rectifier/signal diode -> discrete semiconductor -> electronic component. This category role makes it a foundational building block in nearly every power-handling and signal-conditioning circuit. Key differentiating features of the CDBQR0230L include its low forward voltage drop (specific value is marked [DATA_NEEDED] because the verified web snippet does not quote a numerical VF figure - typical for this rating is 0.35-0.50 V at 10 mA), a peak repetitive reverse voltage (VRRM) of 30 V suitable for 5 V and 12 V rails, a 200 mA average rectified forward current suitable for low-power rails, and a leadless SOD-923F/0402 molded plastic case. The majority-carrier conduction architecture results in negligible reverse recovery time, making the part attractive for high-frequency switching and OR-ing applications. The 0402 (SOD-923F) DFN package has an extremely low profile (~0.4-0.5 mm thickness), with terminations on the long edges that act as the anode and cathode. This package style supports reflow soldering at peak temperatures up to 260 C per JEDEC J-STD-020 and is fully RoHS-compatible. Compared with a glass-packaged SOD-123 Schottky of the same rating, the CDBQR0230L occupies roughly one-quarter of the PCB footprint. Typical applications for the CDBQR0230L include low-current power-OR-ing of dual USB supplies, freewheeling protection across relay coils in 12 V automotive subsystems, signal clamping on data lines up to 30 V, reverse-polarity protection for low-current loads (under 200 mA), and low-loss rectification in portable solar-powered sensor nodes. The low VF minimizes wasted power in series-pass protection circuits. When designing with the CDBQR0230L, observe the 200 mA average forward-current rating and ensure adequate thermal copper pour on the anode/cathode pads to spread the small but non-zero conduction loss. For reverse-polarity protection, confirm that the load's inrush current does not exceed the diode's IFSM surge capability. Avoid using the part above its maximum rated VRRM of 30 V, especially in inductive-clamp circuits where transient overshoot can easily exceed DC ratings. This page consolidates distributor pricing, verified drop-in alternatives, and practical design notes into a single resource - a synthesis not available from the manufacturer datasheet alone.