C3M0080120D - 1200V 80mOhm SiC MOSFET, TO-247-3 | Wolfspeed
N.º de pieza: C3M0080120D ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $25.6 | $256,00 |
| 100 | $22.8 | $2.280,00 |
| 500 | $20.1 | $10.050,00 |
| 1.000 | $17.95 | $17.950,00 |
C3M0080120D Descripción general
A Silicon Carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor that switches high voltages and currents with far less loss than a silicon MOSFET or IGBT. Within the power-semiconductor taxonomy, SiC MOSFETs sit between silicon MOSFETs (limited to ~600-900 V practical breakdown) and emerging GaN HEMTs (typically <650 V). SiC is the dominant WBG technology for 1200 V-class traction, solar, and industrial drives, where switching frequencies of 50-200 kHz and junction temperatures of 175 C are routine.
Key features of the C3M0080120D include an 80 mOhm typical Rds(on) at Vgs=15 V, a low gate charge (Qg typical values for the C3M family are in the tens of nC), an intrinsic body diode with negligible reverse recovery (Qrr), and a maximum operating junction temperature of 175 C. The TO-247-3 package provides a low thermal-resistance path and a standard through-hole footprint that drops into any 1200 V-class SiC design.
Typical applications include EV onboard chargers and DC-DC converters, solar string inverters, industrial motor drives, telecom rectifiers, and solid-state circuit breakers. The C3M platform is designed for hard-switched and soft-switched topologies where its low switching loss and high-temperature tolerance reduce heatsink, magnetics, and cooling cost.
When designing with the C3M0080120D, drive the gate at +15 V/-3 V to -5 V for best Rds(on) and immunity to parasitic turn-on; use a Kelvin-source TO-247 variant (C3M0080120J) if gate-loop inductance is a concern. Always derate to keep Tj below 150 C in hard-switched designs for long-term reliability.
Alternativas directas para C3M0080120D — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
C2M0080120D
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C3M0080120J
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
C3M0160120D
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C3M0080120D Valores máximos y características eléctricas
| Manufacturer | Wolfspeed |
| Part Number | C3M0080120D |
| Technology | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 1200 V |
| On-Resistance Rds(on) typ | 80 mOhm |
| Continuous Drain Current (Tc) | 36 A |
| Power Dissipation (Tc) | 192 W |
| Gate-Source Voltage (Vgs max) | -10 V to +25 V (recommended +15/-3 V) |
| Temperatura de unión de funcionamiento | -55 C to +175 C |
| Encapsulado | TO-247-3 (through-hole, 3 leads + tab) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Body Diode | Intrinsic, zero reverse recovery (Qrr) |
Configuración de pines de C3M0080120D
| Pin 1 | Gate — Gate drive input, +15 V on / -3 to -5 V off recommended |
| Pin 2 | Drain — Power drain, internally tied to the metal mounting tab |
| Pin 3 | Source — Power source, return for gate drive loop |
Área de funcionamiento seguro (DC, Tc = 25 C)
Aplicaciones típicas
C3M0080120D es adecuado para 6 aplicacións: EV Onboard Charger and DC-DC Converter, Solar String Inverter PFC and Boost, Industrial Motor Drive Inverter, Telecom and Server Rectifier, Solid-State Circuit Breaker, High-Frequency LLC and Phase-Shift Resonant Converter.
EV Onboard Charger and DC-DC Converter
The C3M0080120D's 1200 V rating, 80 mOhm Rds(on) and zero reverse-recovery body diode make it the dominant choice for 11 kW-22 kW EV onboard chargers and high-voltage DC-DC stages. In a totem-pole PFC at 100 kHz, the C3M0080120D delivers >98% efficiency and keeps Tj below 150 C with a modest extruded-aluminum heatsink. Compared with silicon superjunction MOSFETs it eliminates diode reverse-recovery loss, and compared with 1200 V IGBTs it roughly halves switching loss.
Recomendado
Solar String Inverter PFC and Boost
In 1500 V DC solar string inverters, the C3M0080120D is used in the boost PFC and DC-AC bridge stages at switching frequencies up to 100 kHz. The 1200 V Vdss comfortably handles 1000-1100 V DC link stress with 80% derating, while the 80 mOhm Rds(on) keeps conduction loss in the 1-2% range at full power. Its 175 C Tj rating allows fan-less outdoor enclosures in desert climates.
Recomendado
Industrial Motor Drive Inverter
The C3M0080120D powers 5 kW-15 kW servo and industrial-drive inverters switching at 20-50 kHz. At these frequencies silicon IGBTs lose ~2-3% efficiency, while the C3M0080120D keeps total loss under 1.5% with the same heatsink. The TO-247-3 footprint matches legacy IGBT modules, simplifying retrofit upgrades without mechanical redesign.
Recomendado
Telecom and Server Rectifier
380 V HVDC and 48 V bus telecom rectifiers built around the C3M0080120D reach 96-98% efficiency at 100 kHz switching, slashing cooling OpEx in dense data-center shelves. The 1200 V rating supports universal 200-480 Vac PFC front-ends, and the SiC body diode eliminates reverse-recovery-induced EMI common in silicon bridge rectifiers.
Recomendado
Solid-State Circuit Breaker
Bidirectional solid-state circuit breakers (SSCBs) for 800 V EV and 1000 V DC solar buses use the C3M0080120D as the main interrupting element. Its zero-Qrr body diode blocks reverse current within microseconds and the 1200 V Vdss absorbs inductive kick from a tripped load. Two C3M0080120D in anti-series form the bidirectional switch.
Recomendado
High-Frequency LLC and Phase-Shift Resonant Converter
In 10-30 kW LLC and phase-shift full-bridge converters for EV charging and battery formation, the C3M0080120D's low output capacitance (Coss) and zero reverse-recovery enable ZVS at 200-500 kHz. This shrinks magnetics by 3-4x versus 20 kHz silicon IGBT designs while maintaining >97% peak efficiency across the load range.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para C3M0080120D — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | C2M0080120D | C3M0080120J | C3M0160120D | NVHL080N120SC1 | SCT3080KL | IMW120R080M2H |
|---|---|---|---|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed | Wolfspeed | onsemi | ROHM Semiconductor | Infineon |
| Package | TO-247-3 | TO-247-3 (same) | TO-247-4 (Kelvin, NOT pin-compatible for slot 4) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) |
| Drain-Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Rds(on) typ | 80 mOhm | 80 mOhm | 80 mOhm | 160 mOhm | 80 mOhm | 80 mOhm | 80 mOhm |
| Continuous Drain Current | 36 A | 36 A | 36 A | 24 A | 34 A | 31 A | 36 A |
| Technology Generation | C3M (3rd gen) | C2M (2nd gen) | C3M (3rd gen) | C3M (3rd gen) | EliteSiC | 4th-gen SiC | CoolSiC G2 |
| Recommended Gate Drive | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +18 V / -3 V | +18 V / -3 V | +15 V / -3 V |
| Body Diode Qrr | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC |
| Max Junction Temperature | 175 C | 150 C | 175 C | 175 C | 175 C | 175 C | 175 C |
Diferenciadores clave
- Zero reverse-recovery body diode (frente a Silicon IGBT (e.g. IKW40N120H3))
- Higher maximum junction temperature (175 C vs 150 C for C2M) (frente a C2M0080120D)
- Lower switching loss than silicon superjunction MOSFETs at 1200 V (frente a Silicon 1200 V SJ MOSFET)
Notas de diseño
Keep the gate-drive loop (gate-driver output -> gate resistor -> MOSFET gate -> Kelvin source -> driver ground) area below 1 cm^2 to minimize parasitic inductance. Estimated: a 10 nH gate-loop inductance with 1 A di/dt produces 10 V of ringing, enough to re-trigger the device in hard-switched half-bridges. Use the C3M0080120J Kelvin-source variant if the PCB cannot accommodate a tight gate loop.
Estimated: at 36 A continuous drain current and 80 mOhm Rds(on), conduction loss is approximately 104 W at Tc = 25 C. With TO-247-3 theta_JC of ~0.45 C/W, junction rise over case is ~47 C, so Tj stays below 175 C at full load only if Tc is held below 128 C. Use a forced-air or liquid-cooled heatsink for continuous full-power operation; a 2 C/W extruded-aluminum heatsink at 1 m/s airflow is typically sufficient.
Do not drive the gate with a silicon MOSFET gate driver rated only to +12 V/-0 V; the C3M family needs +15 V/-3 V (or -5 V) for full Rds(on) and immunity to parasitic turn-on. Apply a TVS across gate-source and leave a minimum of 4 mm creepage between drain and gate traces if the PCB will see >1000 V DC link, since SiC devices switch 5-10x faster than silicon IGBTs and dv/dt is correspondingly higher.
Estimate gate-resistor sizing: total gate charge Qg for the C3M0080120D is roughly 60-100 nC; with a 10 Ohm external resistor and 18 V drive swing, peak gate current is ~1.8 A and turn-on time is ~30-50 ns. Larger Rg slows switching and reduces EMI; smaller Rg reduces switching loss. Start with Rg(on) = 5-10 Ohm and Rg(off) = 2-5 Ohm, then tune to meet conducted-EMI margins.
Información de cumplimiento
TO-247-3 through-hole power package is not subject to AEC-Q100 automotive qualification in this part number; wolfspeed offers AEC-Q101 variants in the same family for traction. RoHS and REACH compliant per wolfspeed product page. Halogen-free status not explicitly stated in datasheet - treat as unknown.
