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Productos (459)

W9825G6KH-6-TR - 256Mbit SDRAM 166MHz TSOP II | Winbond
W9825G6KH-6-TR

W9825G6KH-6-TR - 256Mbit SDRAM 166MHz TSOP II | Winbond

The Winbond Electronics W9825G6KH-6-TR is a 256 Mbit Synchronous DRAM (SDRAM) memory IC organized as 16M x 16 bits, operating at 3.3V with a maximum clock frequency of 166 MHz (6 ns clock cycle), packaged in a 54-lead TSOP II surface-mount package supplied on tape and reel. Synchronous DRAM is a class of dynamic random-access memory that interfaces with a system clock signal, allowing burst transfers that are far faster than asynchronous DRAM or SRAM at comparable cost per bit. Within the memory hierarchy, the W9825G6KH sits below caches (SRAM) and above mass storage, serving as main working memory in embedded systems. It is internally organized as four banks of 4M x 16 bits, using 13 row and 9 column address lines multiplexed on shared A0-A12 pins. Key features include a parallel x16 data interface, LSAMR mode register programming for burst length and CAS latency configuration, separate LDQM/UDQM data masks for byte-level write control, and clock enable (CKE) for low-power power-down modes. The -6 speed grade delivers a data bandwidth of up to 200M words per second per the manufacturer datasheet, and the device is sorted into speed grades -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L for PC-industrial-standard compliance. The device is fabricated in a mature DRAM process and uses standard SDRAM command sets: ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH, and SELF REFRESH. Refresh is required every 64 ms across 8192 rows, with auto-refresh handled by the memory controller. The 3.3V supply keeps power consumption compatible with legacy embedded processors, and TSOP II lead-frame construction supports standard reflow assembly. Typical applications include main memory for ARM Cortex-M7 and other MCU/MPU boards with SDRAM controllers, industrial HMI and display frame buffers, network appliances, and test instrumentation requiring 32 MB of working RAM. Design consideration: budget a complete refresh window in the memory controller; refresh commands consume roughly 1-2% of bandwidth at 64 ms intervals, which matters for deterministic real-time workloads. This page adds distributor pricing, drop-in speed-grade and cross-organization alternatives, and controller-configuration design notes not found in the manufacturer datasheet alone.

USD $0,12 En stock
YZ38F16SBB-9MFD-M - 4Gb DDR3L Industrial DRAM | Loongtion
YZ38F16SBB-9MFD-M

YZ38F16SBB-9MFD-M - 4Gb DDR3L Industrial DRAM | Loongtion

The Loongtion YZ38F16SBB-9MFD-M is a 4Gb DDR3L SDRAM organized as 256M x 16, designed for industrial and embedded systems requiring wide-temperature operation. It comes in a 96-ball FBGA package and supports dual voltage operation at 1.35V (DDR3L) and 1.5V (DDR3), with a speed grade of -9 (DDR3-1866). The device is pin-to-pin compatible with major DDR3/DDR3L parts from Micron, Samsung, SK hynix, and others, making it a drop-in replacement for EOL or hard-to-source memory. DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, achieving high bandwidth. It is the third generation of DDR memory, succeeding DDR2, and is widely used in computing, networking, and embedded systems. DDR3L is a low-voltage variant that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3, making it ideal for power-sensitive applications. Key features include a 4Gb density (256M x 16), 96-ball FBGA package, industrial temperature range of -40°C to +85°C, and support for both 1.35V and 1.5V operation. The device meets JEDEC standards for DDR3 and DDR3L, including ZQ calibration with an external 240Ω ±1% resistor. It is designed for reliable operation in harsh environments, with wide-temperature screening and testing. The YZ38F16SBB-9MFD-M is manufactured using a domestic (Chinese) supply chain, offering a secure and controllable source for critical applications. It is compatible with domestic platforms such as Fudan Micro, Phytium, Loongson, and Rockchip, and is available with development boards for evaluation. The device is also certified with ZZKK (domestic autonomous controllable) and WBK (pseudo-empty package) certifications, ensuring authenticity and quality. Typical applications include industrial automation, embedded computing, networking equipment, and military/aerospace systems where long-term availability and wide-temperature operation are critical. The pin-to-pin compatibility with industry-standard DDR3 parts simplifies BOM management and reduces supply chain risk. When designing with this device, ensure proper decoupling and signal integrity practices are followed, including placing 0.1µF and 10µF capacitors near the power pins and maintaining controlled impedance for the data and address lines. The device supports standard DDR3 termination and calibration schemes, so follow the JEDEC guidelines for layout and routing.

USD $7,20 En stock
YZ48G16V-F9HPI-M - 8Gb DDR4 SDRAM x16 FBGA96 | Loongtion
YZ48G16V-F9HPI-M

YZ48G16V-F9HPI-M - 8Gb DDR4 SDRAM x16 FBGA96 | Loongtion

The Loongtion YZ48G16V-F9HPI-M is an industrial-grade DDR4 SDRAM device with a density of 8Gb, organized as 512M x 16 bits. It is housed in a 96-ball FBGA package (FBGA96) and supports data rates up to 3200 MT/s. This memory chip is designed for wide-temperature operation from -40°C to +85°C, making it suitable for harsh environments such as oil & gas, outdoor telecom, and industrial edge computing. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower power consumption, and increased density. DDR4 operates at a standard voltage of 1.2V, compared to 1.5V for DDR3, reducing power consumption by up to 40%. In the memory hierarchy, DDR4 SDRAM sits as the main system memory, directly interfacing with the memory controller on the CPU or SoC, and is essential for storing active data and instructions. Key features of the YZ48G16V-F9HPI-M include its 8Gb density, x16 organization, and FBGA96 package, which is pin-to-pin compatible with Samsung K4A8G165WC-BCWE and Micron MT40A512M16JY-07EAIT:B. The device supports a wide temperature range of -40°C to +85°C, ensuring reliable operation in extreme conditions. It also offers high-speed data transfer up to 3200 MT/s, enabling high-bandwidth applications. The industrial-grade qualification ensures robust performance and longevity in demanding environments. Technically, the YZ48G16V-F9HPI-M utilizes advanced DDR4 architecture with on-die ECC and data bus inversion to enhance signal integrity. The FBGA96 package provides a compact footprint while maintaining excellent thermal and electrical characteristics. The device is designed to meet JEDEC DDR4 standards, ensuring compatibility with standard memory controllers. The wide-temperature operation is achieved through rigorous testing and selection of components, making it a reliable choice for industrial applications. Typical applications include embedded systems, networking equipment, industrial PCs, and edge computing devices that require high-capacity, high-speed memory in harsh environments. The YZ48G16V-F9HPI-M is particularly suited for outdoor telecom base stations, oil & gas monitoring systems, and industrial automation controllers where temperature extremes are common. When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, verify the memory controller supports the x16 organization and FBGA96 package. The wide-temperature range should be considered in thermal design to ensure the device operates within its specified limits.

USD $8,60 En stock