MOSFETs
Productos (1287)
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC009NE2LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 25V/30V platform, delivering an industry-leading 0.95 mΩ maximum R_DS(on) at V_GS=10V and continuous drain current up to 217A at case temperature, housed in a compact PG-TDSON-8-7 (SuperSO8 5x6) surface-mount package. Designed as a benchmark for synchronous rectification, OR-ing, and hot-swap circuits, the device combines ultra-low on-state losses with best-in-class FOM (R_DS(on) × Q_G) for high-frequency switching applications. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a P-type body region to form an N-type conduction channel between source and drain. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power-device family (alongside IGBTs and GaN HEMTs), serving as the fundamental switching element in modern switch-mode power supplies, motor drives, and battery-protection circuits. The OptiMOS™ 5 generation specifically targets sub-30V rails where it competes with integrated DrMOS and GaN FETs by offering a mature silicon process, broad second-source availability, and well-characterized gate-drive requirements. Key electrical parameters include V_DS = 25V maximum, V_GS(th) = 1.0V to 2.0V typical (1.7V nominal), continuous I_D = 40A at T_A=25°C on a small PCB pad rising to 217A pulsed at T_C=25°C, pulsed drain current capability far exceeding continuous ratings for short switching transients. Power dissipation is rated 2.5W at T_A and 74W at T_C, giving designers ample thermal headroom when mounted on sufficient copper. Total gate charge Q_G is 23 nC typical at V_GS=0 to 4.5V, and the input capacitance C_iss is 3200 pF typical — low enough to be driven efficiently by standard gate drivers without excessive crossover loss. Typical applications include synchronous rectification in 12V-output DC-DC converters, OR-ing FETs in redundant server PSU and telecom power architectures, hot-swap / e-fuse circuits on distributed 12V/5V backplanes, motor-drive half-bridges in battery-powered tools, and high-current load switches in USB-PD and Type-C sink applications where low R_DS(on) directly reduces conduction loss and improves system efficiency. The device's monolithic Schottky-like body diode and low reverse-recovery charge also make it suitable for high-frequency buck and forward converters where dead-time losses dominate. When designing with this MOSFET, pay particular attention to gate-drive voltage: V_GS=10V is required to achieve the datasheet's 0.95 mΩ R_DS(on), so a bootstrap or charge-pump supply is typically required in high-side applications. Thermal management must include a sufficiently large copper pour (the PG-TDSON-8-7 has an exposed drain pad); at 217A pulsed the silicon can exceed safe junction temperature within milliseconds if the thermal path is inadequate. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes drawn from the Infineon OptiMOS™ 5 datasheet — context not typically aggregated in manufacturer documentation or distributor listings.
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
The Infineon BSC009NE2LSATMA1 is an N-channel 25V OptiMOS power MOSFET in a PG-TDSON-8-7 (TDSON-8 FL) surface-mount package featuring the industry's lowest on-state resistance per footprint. It delivers 41A continuous drain current at 25C case temperature and up to 100A/255A pulsed capability, with a maximum R_DS(on) of 0.9 mOhm at V_GS = 10V. The device uses Infineon's advanced OptiMOS 25V silicon process, targeting high-frequency, high-current, low-voltage applications. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. The N-channel variant uses electrons as the primary charge carrier, offering lower on-resistance than equivalent P-channel devices. Power MOSFETs like the BSC009NE2LSATMA1 belong to the discrete semiconductor family and serve as the switching element in synchronous buck converters, motor drives, and battery protection circuits where minimal conduction loss is critical. Key specifications include 25V drain-source breakdown voltage, 0.9 mOhm maximum R_DS(on) at 10V V_GS, 41A continuous drain current (T_a), 100A continuous / 255A pulsed drain current (T_c), 2.5W power dissipation (T_a) and 96W power dissipation (T_c). The PG-TDSON-8-7 package provides an exposed thermal pad with low thermal resistance for direct PCB heatsinking. The OptiMOS technology platform uses a trench-gate structure with an epitaxial layer optimized for low R_DS(on) x Q_g figure of merit. This architecture reduces both switching and conduction losses, enabling higher-frequency operation in switched-mode power supplies. The part's low gate charge and small Miller capacitance make it well-suited for high-current DC-DC conversion and OR-ing applications. Typical applications include battery management systems (BMS) in notebooks, tablets and power tools, OR-ing switches in redundant power architectures, synchronous rectification in 12V bus converters, hot-swap circuits on server backplanes, and motor drive half-bridges in small BLDC fans. Its 0.9 mOhm R_DS(on) keeps conduction losses below 1% even at 30A continuous load, minimizing heatsinking requirements. When designing with this device, observe the SOA curve for pulsed loads and ensure V_GS(th) is well above any noise on the gate drive. Use Kelvin-source connection when available to avoid gate-bounce induced turn-on. The exposed pad must be soldered to a sufficient copper area for thermal dissipation. This page synthesizes distributor pricing, parametric alternatives, application guidance, and thermal considerations that complement the manufacturer datasheet.
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
The Infineon BSC010N04LSATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, delivering 100 A continuous drain current (Tc) and a maximum on-resistance of 1.0 mOhm at 10 V VGS, all packaged in a SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount land. Optimized for synchronous rectification in switched-mode power supplies, this part features excellent gate charge x RDS(on) figure of merit (FOM), very low on-state loss, and 100% avalanche-tested ruggedness, making it ideal for secondary-side synchronous rectifiers and high-frequency DC-DC converter stages. Per the Infineon OptiMOS 5 datasheet family, the device is RoHS-compliant, halogen-free, MSL1 rated, and supports logic-level gate drive. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled semiconductor switch whose conduction channel is formed by electrons, giving it intrinsically lower on-resistance than equivalent P-channel devices at the same silicon area. Power MOSFETs sit in the broader discrete-semiconductor hierarchy alongside IGBTs, BJTs, and diodes, and they dominate applications below 250 V where their switching speed and low conduction loss are critical. Within synchronous rectification, two MOSFETs replace lossy Schottky diodes in the rectifier position to cut conduction loss, raise efficiency, and shrink thermal budgets in high-density converters. Key features include a 40 V drain-source breakdown voltage (VDS max), 100 A continuous drain current (Tc), 1.0 mOhm maximum RDS(on) at VGS=10 V, logic-level VGS(th) of 2 V, and a SuperSO8 5x6 exposed-flange package that minimizes thermal resistance and maximizes current-handling density. The device also offers superior thermal performance with low RthJC for heat-sink-free operation in many 12 V bus applications, plus 100% avalanche rating that confirms robust transient handling. On the architecture side, OptiMOS 5 uses Infineon's advanced trench-cell geometry to slash both conduction loss and switching loss simultaneously, yielding best-in-class FOM (Qg x RDS(on)). The SuperSO8 (PG-TDSON-8 FL) package integrates a large drain-tab thermal pad, enabling direct PCB cooling and high surge-current tolerance. Typical applications include synchronous rectification in 12 V server and telecom DC-DC bus converters, secondary-side rectification in multi-phase VRM modules, OR-ing and hot-swap switches on 24 V industrial rails, motor-drive H-bridges for low-voltage BLDC motors, and battery protection MOSFETs in 4S-8S Li-ion packs where ultra-low RDS(on) is critical for runtime. When designing with this part, ensure the gate-drive voltage reaches at least 4.5 V for full enhancement of RDS(on), and minimize stray source-inductance in the gate-drive loop to keep dV/dt-induced turn-on transients under control. Use a 10 kohm gate pull-down to keep the device off during controller start-up.
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSC010NE2LSIATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 25V technology, rated at 25 V VDS, 38 A continuous drain current at TA (100 A at TC), and 2.5 W power dissipation at TA (96 W at TC). It is housed in a surface-mount PG-TDSON-8-7 (also referenced as TDSON-8 EP) package with an exposed thermal pad. According to the Infineon datasheet for the BSC010NE2LSI family, this part targets high-current, low-voltage power conversion where conduction loss dominates. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as a low-side or high-side switch in DC-DC converters, motor drivers, and load protection circuits. The OptiMOS family is Infineon's optimized trench MOSFET platform for synchronous rectification, OR-ing, and hot-swap applications. As a discrete power semiconductor, it sits below MOSFET driver ICs and above protection/passive components in the power-tree hierarchy, making it a foundational block in synchronous buck, buck-boost, and half-bridge topologies. Key features include very low on-state resistance, low gate charge, and a logic-level compatible VGS(th) that allows direct drive from 3.3 V or 5 V microcontrollers. The PG-TDSON-8-7 package combines a small footprint with a large exposed pad, reducing RthJA and enabling high continuous current handling in space-constrained designs. The TDSON-8 pinout (Gate, Drain, Source, Drain, Drain, Drain, Drain, Drain) is the de facto standard for low-voltage high-current MOSFETs, allowing layout reuse across generations. In synchronous rectification in 12 V-input buck converters, the BSC010NE2LSIATMA1 acts as the low-side switch. Its low Rds(on) minimizes conduction loss, and the small Qg supports sub-ns switching transitions, raising light-load efficiency. The 25 V VDS rating provides adequate margin above nominal 12 V rails, accommodating transient spikes from inductive parasitics. This part is widely used as the synchronous FET in point-of-load regulators, GPU/CPU VRMs, hot-swap controllers, and battery management switching stages. When designing with this MOSFET, place the gate-drive loop (gate driver to gate-to-source) as short as possible to limit ringing. Use 1-2 nF of gate-source pull-down to prevent unintended turn-on, and ensure the exposed pad is soldered to a sufficiently large copper pour to dissipate up to 96 W peak power. Following the manufacturer typical-application reference designs and gate-drive recommendations is critical to fully realize the efficiency advantage of OptiMOS technology.
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
The Infineon BSC011N03LSATMA1 is an N-channel OptiMOS 30V power MOSFET rated at 30V drain-source breakdown and 100A pulsed drain current in a compact PG-TDSON-8-1 (SuperSO8) surface-mount package. Key headline parameters are 1.1 mOhm maximum on-state resistance at VGS=10V, 100A continuous drain current at TC=25C, and 96W maximum power dissipation, making it one of the lowest-RDS(on) parts in its voltage class for the TDSON-8 footprint. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when gate-to-source voltage exceeds its threshold. N-channel enhancement-mode MOSFETs are the workhorse of synchronous buck converters, hot-swap controllers, OR-ing circuits, and motor drivers because their low on-resistance minimizes conduction loss. Within the power semiconductor hierarchy, MOSFETs sit alongside IGBTs, voltage references, and surge protectors as discrete switching devices used in power management and load switching subsystems. The BSC011N03LSATMA1 leverages Infineon's OptiMOS technology platform, which delivers ultra-low gate charge (Qg) and output charge (Qoss) for fast switching transitions. The TDSON-8 package with exposed pad provides a thermal resistance of approximately 40 C/W junction-to-case, enabling the part to sustain the 100A pulsed rating in a footprint compatible with the industry-standard PowerPAK SO-8 land pattern. Typical applications include voltage regulator modules (VRMs) for servers and datacom, point-of-load converters, synchronous rectification in telecom bricks, hot-swap and OR-ing in 12V distribution, and battery protection in power tools. The 30V drain-source rating provides ample margin above 12V buses while keeping RDS(on) lower than 40V-class competitors. When designing with this MOSFET, pay attention to gate drive voltage - full enhancement requires VGS of 10V to achieve the datasheet RDS(on). Driver losses scale with Qg, so a gate driver with 1A peak source/sink capability is recommended for hard-switched applications above 100 kHz. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
The Infineon BSC011N03LSIATMA1 is an N-channel 30 V OptiMOS™ power MOSFET featuring an ultra-low on-state resistance of 1.1 mΩ (typical at 10 V VGS) in a compact PG-TDSON-8-7 surface-mount package. It is rated for 37 A continuous drain current at 25 °C case ambient and 100 A pulsed, with a maximum power dissipation of 2.5 W at TA and 96 W at TC. An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode MOSFET optimized for low-voltage (typically ≤100 V) synchronous rectification, DC-DC conversion, and hot-swap applications. As a member of Infineon's OptiMOS 30 V family, the BSC011N03LSI sits within the broader power MOSFET hypernym hierarchy of discrete semiconductors, and is engineered for highest power density and energy efficiency at the lowest specific on-resistance. Key specifications include 30 V VDS, ±20 V VGS, an integrated Schottky-like monolithically optimized body diode, and an operating junction temperature range of -55 °C to +150 °C. The PG-TDSON-8-7 package provides an exposed drain pad (pin 5-8) for low thermal resistance, enabling efficient heat extraction in space-constrained designs. The part is fully RoHS compliant and qualified to JEDEC standards for moisture sensitivity level 1. The OptiMOS 30V cell uses an advanced trench gate structure that minimizes both on-state resistance (RDS(on)) and gate charge (Qg). The low figure-of-merit (FOM = RDS(on) × Qg) translates directly into reduced switching and conduction losses in high-frequency SMPS, where every milliohm of RDS(on) saved improves efficiency by measurable percentage points at high load. Typical applications include synchronous rectification in 12 V buck and POL converters, hot-swap and OR-ing circuits in server/telecom power systems, battery protection and load switching in 1-3S lithium-ion packs, and motor drive low-side switches in industrial BLDC/robotic systems. When designing with the BSC011N03LSIATMA1, ensure VGS is driven to at least 10 V for full enhancement. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended ≥100 mm² on a 4-layer board) to keep junction temperature below 150 °C under worst-case load. This page synthesizes distributor pricing, drop-in same-brand alternatives, thermal design guidance, and pinout information not consolidated in the manufacturer datasheet, optimized for engineers selecting 30 V power MOSFETs for DC-DC and hot-swap designs.
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
Infineon BSC011N03LSTATMA1 is an N-Channel OptiMOS power MOSFET rated at 30V VDS, 100A continuous drain current at TC=25C, and 1.1 mOhm max on-resistance (typical 0.9 mOhm at VGS=10V). It is housed in a compact PG-TDSON-8 FL surface-mount package that combines a small footprint with an exposed drain pad for low thermal resistance. The part is part of Infineon's OptiMOS family targeting high-efficiency synchronous rectification, OR-ing, and hot-swap applications. Key electrical ratings include 39A continuous at TA=25C (3W board dissipation), 115W power dissipation at TC=25C, VGS +/-20V maximum, and an operating junction temperature range of -55C to +150C. Threshold voltage is 2V typical. A power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a voltage-controlled majority-carrier device that switches resistive loads by modulating channel conductance under the gate oxide. N-channel power MOSFETs are the dominant switching element in low-voltage (<100V) synchronous buck converters, motor drives, and load switches, sitting in the device hierarchy MOSFET -> FET -> transistor -> discrete semiconductor. The "OptiMOS" low-voltage family from Infineon emphasizes low RDS(on) per unit area, low gate charge (Qg typ 72 nC), and low Figure of Merit (FOM = RDS(on) x Qg) to maximize DC-DC converter efficiency. Distinguishing features include an ultra-low 1.1 mOhm RDS(on) at 10V VGS that minimizes conduction loss, an integrated Schottky-like body diode optimized for synchronous rectification, and the TDSON-8 FL package with an exposed cooling pad delivering roughly 1C/W junction-to-case thermal resistance. The 72 nC total gate charge enables MHz switching with low driver loss, and the +/-20V VGS rating gives margin against gate-driver transients on 12V rails. The internal cell structure uses Infineon's trench MOSFET technology to shrink the cell pitch below 1 micron, packing more silicon per mm2 and driving RDS(on) into the sub-mOhm range without sacrificing avalanche ruggedness. The device is rated for 100% UIS (avalanche) testing. Typical applications include synchronous rectification in 12V buck converters for server/datacenter VRMs, battery protection in battery management systems (BMS), OR-ing diodes in redundant -48V telecom supplies, motor drive H-bridges below 30V, and hot-swap controllers in enterprise SSDs and network switches. When designing with this part, observe strict gate-drive layout: keep the gate loop (driver -> gate -> source) under 1 cm to suppress ringing, and place a 10-100 Ohm gate resistor between the driver and the gate pin to damp the miller plateau. The exposed pad MUST be soldered to a copper area of at least 6 cm2 to stay within the datasheet SOA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC014N04LS - 40V 1.4mOhm N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC014N04LS is an N-channel power MOSFET from the OptiMOS 5 family with a 40 V drain-source voltage rating, a maximum on-state resistance of 1.4 mOhm, and a maximum continuous drain current of 198 A, housed in a SuperSO8 5x6 (TDSON-8FL) surface-mount package. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the component hierarchy, the BSC014N04LS belongs to the transistor family, specifically the N-channel enhancement-mode MOSFET class, which sits under power semiconductors and power management. These devices are the workhorses of DC-DC converters, motor drives, and load switches because they combine very low conduction loss with fast switching. Key features of the BSC014N04LS include industry-leading low RDS(on) of 1.4 mOhm max, which minimizes conduction losses (I2R) in high-current paths; a maximum drain current of 198 A at case temperature per datasheet conditions; and OptiMOS 5 thin-wafer technology, which Infineon states delivers 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices. The low gate charge also reduces gate-drive losses in fast-switching topologies. Technically, the device uses Infineon advanced thin-wafer OptiMOS 5 process technology, optimizing the trade-off between specific on-resistance and switching charge. The TDSON-8FL package with exposed drain pads provides excellent thermal performance: the datasheet thermal rating assumes mounting on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm2 of one-layer, 70 um copper for the drain connection. Absolute maximum ratings are specified at 25 C case temperature, and de-rating applies at higher case temperatures per the datasheet derating diagrams. Typical applications include synchronous rectification in server VRM and telecom DC-DC converters, high-current load switches, motor drive half-bridges, and battery-powered power paths operating from 12 V or 24 V rails, where ultra-low conduction loss and compact footprint are decisive. Design consideration: at 198 A-class currents, PCB copper area and busbar design dominate thermal behavior; verify RDS(on) at your actual gate-drive voltage and junction temperature, since 1.4 mOhm is a 25 C, 10 V VGS maximum figure. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon BSC014N04LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 platform, rated for 40 V drain-source voltage, 32 A continuous drain current (Ta) / 100 A continuous drain current (Tc), and a maximum on-resistance of 1.4 mOhm at 10 V VGS, housed in a SuperSO8 5x6 (TDSON-8 FL) surface-mount package. It is optimized for synchronous rectification in switched-mode power supplies (SMPS) and for high-current low-voltage DC-DC conversion. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which conduction between drain and source is enabled by applying a positive gate-source voltage. Modern trench MOSFETs such as OptiMOS 5 are widely used as the low-side synchronous rectifier in buck converters and as the high-side/low-side switch in half-bridge topologies, where their low R_DS(on) directly determines conduction loss. Compared with earlier planar generations, OptiMOS 5 achieves about 15% lower R_DS(on) and 31% lower figure of merit (R_DS(on) x Qg), making it a representative of the latest low-voltage power-MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management building block. Key features of the BSC014N04LSATMA1 include a 1.4 mOhm maximum R_DS(on) at VGS=10 V, an ultra-low gate charge for fast switching, an exposed SuperSO8 leadframe for top-side cooling, and 2.5 W power dissipation at Ta / 96 W at Tc. The thin-wafer process enables simultaneously low conduction loss and low switching loss, which is critical at high switching frequencies (300 kHz to 1 MHz) typical of modern VRM and POL converters. The architecture relies on an advanced thin-wafer trench cell, which minimizes the cell pitch while preserving avalanche ruggedness. The result is a figure of merit (FOM = R_DS(on) x Qg) among the lowest in the 40 V class, reducing both driver losses and thermal rise. The SuperSO8 (TDSON-8 FL) package has an exposed pad that doubles as both the drain connection and a thermal path, allowing the PCB copper pour to sink heat directly into the board. Typical applications include synchronous rectification in 12 V server and telecom DC-DC converters, 24 V industrial point-of-load regulators, USB-PD and e-mobility auxiliary rails, motor-drive H-bridges, and battery-management system (BMS) protection. Designers typically select this part when conduction loss dominates and switching frequency exceeds 250 kHz. When designing with the BSC014N04LSATMA1, place a 100 nF ceramic bypass capacitor close to the gate pin to suppress parasitic turn-on caused by the drain-to-gate Miller capacitance. Confirm that the gate-drive voltage swings cleanly between 0 V and 10 V; a 4.5 V drive is acceptable for logic-level applications, but full enhancement requires VGS = 10 V to reach the rated 1.4 mOhm R_DS(on). This page synthesizes Infineon's official datasheet values with distributor pricing, verified drop-in equivalents, and practical PCB layout notes not found in the standalone datasheet.
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
The Infineon BSC014N04LSIATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 thin-wafer platform, rated at 40 V VDS and delivering up to 100 A continuous drain current at Tc in an 8-pin TDSON-8 FL (PG-TDSON-8 FL) surface-mount package. It combines an industry-leading 1.4 mOhm maximum on-resistance with a low figure-of-merit (RDS(on) x Qg), targeting high-efficiency synchronous rectification and fast-switching converter stages where both conduction and switching losses dominate the thermal budget. An N-channel MOSFET is a voltage-controlled semiconductor switch in which majority carriers are electrons flowing through an n-type channel; turning the gate on allows current to flow from drain to source, while turning the gate off blocks it. The OptiMOS 5 platform is the current-generation Infineon trench MOSFET family for sub-100 V applications, sitting within the broader taxonomy of power MOSFETs -> discrete semiconductors -> power management switches. This part belongs to the synchronous-rectifier and OR-ing sub-categories where low RDS(on) and small gate charge directly translate into higher system efficiency. Key features include a 1.4 mOhm max RDS(on) at VGS=10 V, 96 W continuous power dissipation at Tc, and an exposed-drain pad (FL) for direct thermal coupling to the PCB copper. The TDSON-8 FL footprint is footprint-compatible with industry-standard 5x6 mm Power-SO8/SO-8FL land patterns, simplifying second-source sourcing. Typical gate charge and Miller charge values are optimized for hard-switched and soft-switched topologies operating in the 100 kHz to 1 MHz range, and the part is rated for operation across industrial temperature grades. Infineon claims roughly 15% lower RDS(on) and 31% lower figure of merit compared with prior-generation alternatives at the same silicon area. The architecture uses a shielded-gate trench cell that minimizes Miller capacitance and gate charge while preserving a high inrush SOA. Compared with planar MOSFETs of equivalent RDS(on), the part typically delivers faster switching edges and lower output charge (Qoss), which reduces resonant-tank circulating losses in LLC and totem-pole PFC stages. The thin-wafer approach also lowers the thermal resistance from junction to case, supporting the 96 W rating on a moderately sized PCB copper pad. Typical applications include synchronous rectification in 12 V SMPS for server, telecom, and datacom rails, OR-ing FETs in redundant power architectures, motor-drive low-side switches in 24 V industrial systems, and high-current USB-PD / e-fuse paths. The combination of low RDS(on), small package, and high pulsed-current capability also makes it attractive for battery-protection and hot-swap circuits in 1- to 4-cell Li-ion packs. Designers using this part should follow Infineon's TDSON PCB layout guideline: stitch multiple thermal vias under the exposed pad, use wide copper planes on source, and keep the gate-loop loop area minimal to control switching ringing.
BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC014N04LSTATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 40 V VDS with an industry-leading maximum on-resistance of 1.45 mΩ, packaged in the SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount outline. The part is specified for 33 A continuous drain current at TA=25°C and 100 A at TC=25°C, with power dissipation of 3 W (TA) and 115 W (TC), suiting it for high-current switching paths. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field to modulate the conductivity of a semiconductor channel. N-channel MOSFETs such as this part are the dominant building blocks of synchronous buck converters, half-bridge stages, and hot-swap controllers because their low R DS(on) minimizes conduction loss. The OptiMOS 5 process family represents Infineon's fifth-generation trench MOSFET technology, positioned within the broader power semiconductor hierarchy: MOSFET → power transistor → discrete semiconductor → power management. Key features include the SuperSO8 5x6 package that delivers 1.45 mΩ max R DS(on) at VGS=10 V with enhanced thermal rating, integrated Schottky-like body diode characteristics, and a thermally efficient exposed pad (PG-TDSON-8 FL) footprint. The die is optimized for switching frequencies from 100 kHz to 1 MHz, balancing gate charge and output capacitance for fast turn-on/turn-off transitions. Compared to the previous OptiMOS 3 generation, OptiMOS 5 reduces R DS(on) by approximately 30 percent at equivalent die size, allowing either smaller magnetics or higher efficiency at the same footprint. Typical applications include 12 V-24 V synchronous buck converters in telecom and server VRMs, OR-ing and hot-swap circuits in 48 V distributed-power architectures, motor drive half-bridges in eMobility tools and light electric vehicles, and USB-PD / e-marked cable protection switches. The low R DS(on) makes it particularly attractive for high-current, low-voltage power paths where conduction loss dominates the efficiency budget. When designing with this device, calculate both conduction loss (I² × R DS(on)) and switching loss (½ × VDS × ID × (tr + tf) × fSW) to ensure the total dissipation stays below the derated continuous rating. The exposed thermal pad must be soldered to a copper pour of at least 1 square inch to achieve the rated 1.5°C/W RthJC thermal performance.
BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon
Infineon BSC014N06NSATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated at 100 A continuous drain current (Tc) and 30 A (Ta), housed in a SuperSO8 / PG-TDSON-8-17 (5x6 mm) surface-mount package. It delivers an ultra-low typical on-resistance of 1.4 mOhm at VGS=10 V and supports +/-20 V gate-source voltage, with 2.5 W (Ta) / 156 W (Tc) power dissipation. According to Infineon's OptiMOS 5 datasheet, this part targets high-efficiency synchronous rectification, DC-DC conversion, and motor-drive stages where lowest RDS(on) x Qg FOM directly reduces conduction and switching losses. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device that conducts current between drain and source when a sufficient positive gate-source voltage is applied. Power MOSFETs sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor, and are the dominant switching element in sub-200 V, sub-100 kHz SMPS, motor-control, and hot-swap designs because they switch faster, are easier to drive, and exhibit lower conduction loss than bipolar devices at low voltages. Key features include 1.4 mOhm typical RDS(on) (10 V VGS), +/-20 V maximum gate-source voltage with +/-10 V recommended drive, 60 V drain-source breakdown, and a SuperSO8 5x6 mm footprint that minimizes PCB area and provides a low thermal resistance path via the exposed drain pad. The OptiMOS 5 technology platform improves Figure of Merit (RDS(on) x Qg) by typically 30-50% versus prior OptiMOS generations, directly translating to lower switching losses at high frequency. Internally the device uses a shielded-gate trench MOSFET cell architecture optimized for low output charge (Qoss) and low gate charge (Qg). The 5x6 mm SuperSO8 footprint is footprint-compatible with industry-standard Power-SO8 / LFPAK packages from other vendors, simplifying second-sourcing. The exposed drain pad provides direct PCB heatsinking, enabling 156 W Tc dissipation with proper thermal via design. Typical applications include synchronous-rectifier stages in 48 V telecom and server buck converters, high-current OR-ing and hot-swap controllers, brushless DC motor drives, battery management protection FETs in 12 V/24 V e-mobility, and Class-D audio amplifier output stages. Each application benefits from the very low RDS(on) and the small SuperSO8 footprint. When designing with this part, ensure the gate driver can source/sink adequate peak current (Qg and Qgd are key) and that the PCB layout uses sufficient copper area and thermal vias under the exposed pad to achieve the rated 156 W Tc dissipation. Above 50 A continuous, derate aggressively or use a smaller SuperSO8 footprint than DPAK alternatives.
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
The Infineon BSC014NE2LSIATMA1 is an N-channel 25 V OptiMOS power MOSFET in a PG-TDSON-8-7 (SuperSO8) surface-mount package, rated for 33 A continuous drain current at 25 °C case-free ambient and 100 A pulsed at case temperature, with on-state resistance of 1.4 mOhm at 10 V gate drive. It belongs to Infineon's OptiMOS 25V product family, engineered for synchronous rectification, buck/boost DC-DC converters, and OR-ing switches where ultra-low RDS(on) and small footprint are critical. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (here, a metal-oxide layer) to modulate majority-carrier conduction between source and drain. N-channel enhancement-mode MOSFETs like the BSC014NE2LSIATMA1 are the workhorse of switched-mode power conversion: they sit in the low-side or high-side position of a buck, boost, or half-bridge topology and dissipate I²·RDS(on) watts during conduction. The OptiMOS family is hierarchically classified as: power MOSFET -> voltage-controlled switch -> discrete semiconductor -> power management building block. Headline specifications include VDS = 25 V, VGS = ±20 V max, continuous ID = 33 A (Ta) / 100 A pulsed (Tc), and RDS(on) = 1.4 mOhm typical at VGS = 10 V. The PG-TDSON-8-7 footprint measures approximately 3.3 mm × 3.3 mm with an exposed thermal pad that drops junction-to-case thermal resistance to roughly 1 °C/W when properly soldered to a copper pour. The part is RoHS compliant, lead-free, and rated for -55 °C to +150 °C operating junction temperature. Architecturally, the device uses Infineon's trench-gate OptiMOS cell structure with a stripe-style gate layout that optimizes cell density while keeping gate charge (Qg) low. Lower Qg improves switching losses at high frequencies: a 1 MHz synchronous buck sees measurable efficiency gains when Qg drops below 50 nC, which is achievable with this family. The integrated gate-source ESD protection and avalanche-rated body diode (EAS typically specified in the datasheet) further simplify design-in for hot-swap and motor-drive applications. Typical applications include synchronous rectification in 12 V VRM and POL converters for servers and telecom boards, high-current buck regulators in graphics cards and FPGA power rails, low-voltage OR-ing FETs in redundant power supplies, and battery protection / load switches in 1S-3S Li-ion packs. Designers value the part for its combination of extremely low RDS(on)·area figure-of-merit and a footprint that fits where DPAK alternatives cannot. When designing with this part, prioritize a large copper pour under the exposed pad to keep RthJA below 50 °C/W; at 30 A continuous with 1.4 mOhm RDS(on), the part dissipates roughly 1.3 W, requiring thermal relief to maintain safe Tj. Keep the gate-drive loop tight and use a 10 ohm gate resistor to suppress ringing. This page synthesizes distributor pricing, same-brand OptiMOS alternatives, and PCB-layout notes that complement the manufacturer datasheet for faster design-in.
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSC015NE2LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 25V technology platform, rated at 25 V VDS max with continuous drain current of 33 A at Ta and 100 A at Tc, and housed in the compact PG-TDSON-8-6 (SuperSO8 5x6) surface-mount package. Designed for highest power density and energy efficiency in both standby and full-load operation, this device targets synchronous rectification, DC-DC conversion, and high-current switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and condition power in electronic systems. N-channel MOSFETs are the dominant choice for low-side and synchronous-rectifier positions in switch-mode power supplies because their higher carrier mobility delivers lower on-resistance per unit area than equivalent P-channel parts. Within the power-semiconductor hierarchy, this MOSFET sits under: power MOSFET -> discrete semiconductor -> power management. OptiMOS 5 represents Infineon's fifth-generation optimized trench process that minimizes FOM (Figure of Merit = RDS(on) x Qg) for the 25V class. Key specifications include a maximum drain-source on-resistance of 1.5 mOhm at VGS = 10 V (per Infineon part-page data), ultra-low gate charge for high-frequency operation, and a power dissipation rating of 2.5 W at Ta and 50 W at Tc. The PG-TDSON-8-6 package exposes the die on a large thermal pad, allowing direct PCB copper heatsinking and keeping junction temperature rise modest at typical load currents. This combination of low RDS(on) and small footprint is the central value proposition. The OptiMOS 5 process technology uses an advanced trench cell architecture optimized for both low conduction loss and low switching loss, achieving benchmark FOM figures in the 1.5 mOhm-class 25V market. The device is avalanche-rated and qualified for industrial and automotive environments (subject to specific Q-grade variant). Typical applications include synchronous rectification in telecom DC-DC bricks, CPU/GPU VRM phases, server and datacom POL converters, motor drive half-bridges, hot-swap and OR-ing switches, and automotive 12V bus converters. Design consideration: ensure gate-drive voltage is 10 V for full RDS(on) rating; 4.5 V drive increases RDS(on) significantly. A low-inductance PCB layout with kelvin-source connection is required to realize the rated switching performance.
BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon
The Infineon BSC016N06NSATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 60 V drain-source voltage, 100 A continuous drain current (Tc), and an ultra-low 1.6 mΩ maximum on-resistance, housed in a compact PG-TDSON-8 FL surface-mount package. Built on Infineon's advanced OptiMOS™ 5 60 V technology platform, this device targets high-efficiency synchronous rectification, DC-DC conversion, and motor-control applications where conduction and switching losses dominate. An N-channel power MOSFET is a voltage-controlled semiconductor switch whose drain-source channel conducts when a positive gate-source voltage (VGS) is applied above its threshold. MOSFETs are a subset of field-effect transistors (FETs) and the dominant switching element in modern switched-mode power supplies (SMPS), where they sit within the broader power-management IC ecosystem as discrete synchronous rectifiers or low-side/high-side switches. Key features include 71 nC total gate charge (Qg), a logic-level-compatible 10 V gate drive optimized threshold, 2.5 W power dissipation at TA, and 139 W at TC, enabling either compact PCB designs or robust thermal headroom in industrial modules. The PG-TDSON-8 FL package exposes the drain via the thermal pad for low thermal resistance (θJA), which is critical when dissipating >5 W continuously. The OptiMOS™ 5 process trades a small increase in gate charge for a substantial reduction in RDS(on) and output capacitance (Coss), giving better figures of merit (FOM = RDS(on) × Qg) than older OptiMOS™ 2/3 generations. Designers benefit from lower conduction losses at high load and reduced switching losses at high frequency, especially above 100 kHz. Typical applications include 48 V DC-DC converters in telecom brick supplies, solar microinverters, server and datacom point-of-load (POL) regulators, motor-drive half-bridges, and battery protection circuits in e-mobility and power tools. When designing with this device, select a gate driver with adequate sink/source current (≥1 A peak) to charge the 71 nC Qg quickly. Keep the gate-drive loop tight to minimize ringing, and provide sufficient copper area on the thermal pad to keep Tj below 125 °C at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single source for parametric context, supply-chain breadth, and selection guidance.
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSC016N06NSTATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 60V drain-to-source voltage, with a maximum on-resistance of 1.6 mOhm at VGS=10V and continuous drain current up to 100A (Tc) / 31A (Ta), housed in a SuperSO8 (PG-TDSON-8 FL) package. The device combines Infineon's latest OptiMOS 5 silicon technology with an enhanced SuperSO8 package that improves thermal performance over the standard SO-8 footprint, enabling higher power density and improved robustness in switching applications. The part ships in tape and reel packaging suitable for high-volume surface-mount production lines. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field applied to the gate terminal to control current flow between drain and source. MOSFETs belong to the FET (field-effect transistor) family, sitting within discrete semiconductors, and serve as the primary switching element in DC-DC converters, motor drives, synchronous rectification, hot-swap circuits, and load management systems. The 'OptiMOS' platform is Infineon's designation for its optimized trench MOSFET process family, optimized for low RDS(on) x Qg figure-of-merit, fast switching, and low conduction losses. Key electrical characteristics of the BSC016N06NSTATMA1 include an ultra-low RDS(on) of 1.6 mOhm at 10V VGS, low gate charge Qg optimized for high-frequency operation, and a logic-level capable threshold range. The SuperSO8 package provides reduced thermal resistance versus standard SO-8, allowing the device to dissipate 167W of power at 25C case temperature versus the typical 3W at 25C ambient. This makes the part suitable for both high-current industrial applications and space-constrained consumer designs. From an architectural perspective, the OptiMOS 5 process uses an advanced trench cell structure with a refined epitaxial layer that minimizes on-resistance per unit silicon area. The enhanced SuperSO8 (TDSON-8 FL) lead-frame reduces source-inductance and improves heat transfer through the exposed pad, which is critical for hard-switching topologies such as buck converters and half-bridges where switching losses dominate total dissipation. Typical applications for the BSC016N06NSTATMA1 include synchronous rectification in 48V telecom DC-DC converters, hot-swap and OR-ing circuits in server power distribution, motor drive stages in 24V industrial systems, low-voltage battery management protection, and USB-PD / high-current Type-C sink controllers. The combination of low RDS(on) and SuperSO8 thermal performance makes it well-suited to designs where board area is constrained but continuous current handling must remain high. When designing with this device, ensure that the gate-drive voltage reaches the full 10V to achieve the specified low RDS(on). A gate-driver such as the EiceDRIVER 1EDN71 family from Infineon is recommended to deliver clean, fast edges. Pay close attention to PCB layout of the source-kelvin connection to minimize the switching loop inductance, especially at high di/dt. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet, offering an integrated engineering view of the BSC016N06NSTATMA1.
BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon
The Infineon BSC018N04LSGATMA1 is an N-channel logic-level power MOSFET built on Infineon's OptiMOS 3 technology, rated for 40 V VDS and delivering up to 100 A continuous drain current at TC=25°C with an extremely low maximum on-resistance of 1.8 mΩ at VGS=10 V. It is housed in the compact 8-pin PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package with an exposed thermal pad for low RθJA. According to the manufacturer datasheet, the part is qualified to JEDEC standards, is Pb-free / RoHS compliant, and is 100% avalanche tested, making it a robust choice for high-current switching power applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that converts an input gate-source voltage into a low-loss conduction path between drain and source. Power MOSFETs sit at the bottom of the power-conversion hierarchy: they are the active switches used inside switching regulators (DC-DC converters), motor drivers, and load switches, which in turn form the power management subsystem of any electronic product. The OptiMOS 3 family specifically optimizes the FOM (figure of merit, Qg × RDS(on)) for high-frequency SMPS operation, balancing conduction and switching losses. Key features include an ultra-low 1.8 mΩ maximum RDS(on) at 10 V VGS, logic-level drive compatibility from 4.5 V VGS, and a Superior thermal resistance package rated for 2.5 W at TA and 125 W at TC. The 100% avalanche-tested rating ensures robust operation under inductive switching transients, and the Pb-free, RoHS-compliant, halogen-free termination meets modern environmental standards. The SuperSO8 package provides a low-profile 5x6 mm footprint compatible with standard Power-SO8 PCB land patterns. Typical applications include DC-DC synchronous rectification in server and telecom SMPS, hot-swap and OR-ing circuits in 12 V/24 V distributed-power systems, high-current load switches, motor-drive H-bridges (low-side), and battery-protection circuits in power tools and e-mobility. The combination of low RDS(on) and small package enables compact, high-efficiency designs. When designing with this part, gate-drive strength matters: although rated 4.5 V minimum VGS, full RDS(on) specification requires 10 V VGS. PCB layout must maximize copper under the exposed pad to achieve the rated thermal performance.
BSC018NE2LSATMA1 - 25V 1.8mΩ OptiMOS N-Ch MOSFET | Infineon
The Infineon BSC018NE2LSATMA1 is an N-channel OptiMOS power MOSFET rated at 25V VDS with a 1.8 mΩ typical on-resistance at VGS=10V, delivering up to 100A continuous drain current (Tc) in a compact PG-TDSON-8-1 (8-PowerTDFN) surface-mount package. It is part of Infineon's OptiMOS 25V product family, which targets highest power density and energy efficiency in discrete switching converters and OR-ing applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in switching power supplies (SMPS), motor drives, load switches, and battery protection circuits. Compared with older planar MOSFET technologies, OptiMOS devices use a trench gate structure that lowers on-resistance per unit silicon area and reduces gate charge (Qg ≈ 39 nC at 10V on this part), simultaneously improving conduction loss and switching loss. The MOSFET belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor -> electronic component. Key features include a 25V drain-source breakdown (suited to 12V bus rails with strong transient margin), ultra-low 1.8 mΩ RDS(on) at 10V VGS for minimum I²R conduction loss, and a low 2800 pF output capacitance (Coss at 12V VDS) that limits switching-node ring and dv/dt stress. The 8-PowerTDFN package provides an exposed thermal pad, giving theta_JA suitable for 2.5W (Ta) and 69W (Tc) power dissipation envelopes. Technically, the OptiMOS 25V cell uses an advanced trench-gate process with low-resistance source metallization, yielding both low RDS(on) and robust avalanche ruggedness. The low Qg (39 nC) and low Qgd reduce driver losses and ease gate-drive design, allowing the part to switch cleanly from a standard gate-driver IC at 10V. The combination of low FOM (RDS(on) × Qg) makes it competitive with newer generations on dynamic performance. Typical applications include high-current synchronous buck converters in 12V server and telecom rails, OR-ing FETs in redundant -48V/-54V telecom rectifier outputs (de-rated to 25V), battery management / protection FETs in low-voltage packs, hot-swap / eFuse controllers in 12V distribution, and high-current DC motor drivers in industrial automation. The combination of low RDS(on) and small footprint is especially valuable in space-constrained point-of-load (POL) modules. When designing with BSC018NE2LSATMA1, observe the gate-drive voltage of 10V (logic-level compatibility at 4.5V is not specified) and respect the SOA at high di/dt. Use Kelvin-source PCB layout when possible to mitigate source-inductance-induced gate ringing. The exposed pad must be soldered to a sufficiently large copper pour to keep junction temperature within the 150 °C limit. This page synthesizes distributor pricing, drop-in OptiMOS alternatives, and practical thermal/layout notes not aggregated in the Infineon datasheet alone, helping power design engineers shorten part-selection cycles.
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
The Infineon BSC019N04LSTATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 40 V drain-source voltage with 1.9 mOhm maximum on-resistance at 10 V VGS, delivering 28 A continuous drain current at 25 C case temperature and up to 161 A pulsed. Housed in a compact SuperSO8 (TDSON-8) package with an exposed drain pad, the part is optimized for high-efficiency synchronous rectification, DC-DC conversion, and motor-drive stages in telecom, server, and industrial systems. According to the Infineon product family datasheet, the device combines low RDS(on) with low gate charge (Qg typical ~85 nC) to minimize conduction and switching losses simultaneously. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs such as the BSC019N04LSTATMA1 are the workhorses of modern synchronous buck converters, where two MOSFETs (a control FET and a sync FET) alternate to step down a higher DC rail to a lower voltage. OptiMOS 5 is Infineon's fifth-generation 40 V trench MOSFET platform, designed to deliver the industry's lowest Figure of Merit (FOM = RDS(on) x Qg) at this voltage class for highest efficiency at high switching frequencies. Key features include 1.9 mOhm maximum RDS(on) at VGS = 10 V, a 40 V VDS rating that provides ample margin above nominal 12 V or 24 V rails, and avalanche-rated ruggedness with a 94 W power dissipation capability (Tc). The logic-level-compatible gate threshold (typ. 1.7 V) allows direct drive from standard 3.3 V or 5 V PWM controllers, eliminating the need for a gate-driver bootstrap in some low-side topologies. The SuperSO8 footprint also offers an exposed thermal pad with theta_JA in the low-40s C/W range, enabling compact designs without a discrete heatsink at moderate loads. Typical applications include synchronous rectification on the secondary side of isolated DC-DC bricks, point-of-load (POL) buck converters in telecom and server motherboards, hot-swap and OR-ing controllers, and low-side switches for motor-control H-bridges. At 12 V input the part can deliver tens of amps continuously with negligible conduction loss. When designing with this device, pay close attention to gate-drive voltage and dv/dt. Although logic-level compatible, a 10 V drive maximizes RDS(on) margin; at 4.5 V the on-resistance roughly doubles. Always place the gate resistor and local bypass capacitor within 5 mm of the gate pin to suppress parasitic turn-on. This page synthesizes distributor pricing, drop-in OptiMOS 5 and competitive alternatives, and practical layout notes not found in the manufacturer datasheet alone.
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
The Infineon BSC019N04NSGATMA1 is an N-channel 40 V OptiMOS power MOSFET rated for 100 A continuous drain current at 25 °C case temperature, housed in a surface-mount PG-TDSON-8-1 (TDSON-8 FL) package. It delivers an extremely low typical on-state resistance of 1.9 mΩ at VGS = 10 V, making it one of the lowest-RDS(on) parts in its voltage class. The device is built on Infineon's OptiMOS platform, a trench MOSFET technology optimized for low conduction and switching losses. An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch in which the drain-source channel conducts electrons when a positive gate-source voltage is applied above the threshold. MOSFETs occupy a key place in the discrete-semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 'N-channel' designation means majority carriers are electrons, yielding lower on-resistance and faster switching than equivalent P-channel parts. OptiMOS is Infineon's brand name for its 30V-300V trench power-MOSFET families, used in synchronous rectification, DC-DC conversion, and hot-swap circuits. Key features of the BSC019N04NSGATMA1 include 1.9 mΩ typical RDS(on) at VGS = 10 V, 100 A continuous ID at TC = 25 °C, and a 40 V drain-source breakdown voltage suitable for 12 V and 24 V bus systems. The PG-TDSON-8-1 package features a large exposed drain pad that doubles as the electrical drain terminal and a thermal pathway, with RθJA in the 50 °C/W range for properly laid-out boards. Gate charge is optimized for high-frequency switching, typically under 100 nC total Qg, enabling compact, high-efficiency synchronous buck and buck-boost converters. The part is particularly suited for OR-ing, hot-swap, and e-fuse roles on 12 V telecom and server rails where low conduction loss dominates thermal budget. Its 40 V rating also gives ample headroom for 19 V notebook adapters and 24 V industrial supplies. In synchronous rectification it replaces Schottky diodes in point-of-load converters above 30 A, cutting rectifier losses by roughly half. Designers should bias the gate at 10 V for lowest RDS(on) and derate to 6 V or 4.5 V curves when logic-level compatibility is required. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and approved cross-brand equivalents, and practical PCB/thermal design notes not found in the bare datasheet.
BSC019N06NSATMA1 - 60V 100A 1.95mΩ OptiMOS 5 MOSFET | Infineon
The Infineon BSC019N06NSATMA1 is an N-channel power MOSFET from the OptiMOS 5 family, rated for 60V drain-source voltage, 100A continuous drain current (Ta), and 136W power dissipation in the PG-TDSON-8 FL (SuperSO8 5x6) surface-mount package. It delivers an ultra-low typical on-state resistance of 1.95 mΩ at VGS=10V, ID=50A, and a typical gate threshold of 3.3V. The OptiMOS 5 platform combines a trench MOSFET structure with an enhanced temperature-rated package for improved ruggedness in high-current switching. What is an OptiMOS power MOSFET? An OptiMOS power MOSFET is a trench-gate N-channel enhancement-mode MOSFET optimized by Infineon for switching power-conversion applications. It belongs to the hierarchy: power MOSFET -> discrete semiconductor -> voltage-controlled switch -> power management component. OptiMOS 5 specifically targets low RDS(on), low gate charge, and improved body-diode robustness for synchronous rectification, motor control, and DC-DC converter primary-side switching. Key features include 1.95 mΩ maximum RDS(on) at VGS=10V, an extended temperature rating that improves thermal cycling reliability versus the prior OptiMOS generation, and a low-profile SuperSO8 5x6 mm package with an exposed drain pad for direct PCB heatsinking. The device is avalanche-rated and qualified for industrial-grade operating conditions, making it suitable for harsh-environment switching. The architecture is built on Infineon's OptiMOS 5 trench process, which shrinks the cell pitch to lower on-state resistance per unit silicon area while reducing gate charge (Qg) for faster switching. The PG-TDSON-8 FL package's flip-chip variant (FL) places the die on top of the lead frame with the drain tab exposed at the bottom, maximizing heat transfer to the PCB copper and supporting continuous high-current operation without an external heatsink. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, motor drive H-bridges in industrial automation and e-mobility, battery management protection FETs in 12V/24V Li-ion packs, solar micro-inverter power stages, and high-current load switches in hot-swap / OR-ing circuits. The 60V rating comfortably supports 24V and 48V nominal buses with substantial transient margin. When designing with BSC019N06NSATMA1, choose a gate driver capable of sourcing/sinking at least 2A to fully enhance the FET within tens of nanoseconds. Place the gate-source resistor (typically 10-100 kΩ) close to the GS pins to prevent parasitic turn-on, and minimize the high-dV/dt power loop area for EMC compliance. This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-15, drop-in alternatives in the same PG-TDSON-8 FL package, and practical design notes not collected in the manufacturer's brief summary, providing engineers a single reference for evaluation, sourcing, and PCB layout.
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
The Infineon BSC019N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, delivering a maximum drain-source voltage of 80 V, a continuous drain current of up to 237 A at case, and an ultra-low maximum on-resistance of 1.9 mOhm at 10 V gate drive. It is housed in a PG-TSON-8-3 (SuperSO8 5x6) surface-mount package with an exposed pad, making it well-suited for high-density, high-current DC-DC conversion stages where conduction losses dominate. The part is rated for 3 W power dissipation at ambient and 214 W at case temperature 25 C. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between its drain and source terminals. The BSC019N08NS5ATMA1 belongs to the OptiMOS 5 family, which is Infineon's fifth-generation optimized trench MOSFET platform targeting 40 V to 300 V rails. The technology hierarchy is: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component. OptiMOS 5 specifically reduces figure-of-merit (RDS(on) x Qg) by roughly 30 percent versus the prior OptiMOS 3 generation, allowing either higher efficiency at the same footprint or higher current at the same RDS(on). The device features 80 V VDS max, 1.9 mOhm RDS(on) max at VGS = 10 V, an avalanche-rated single-pulse body diode, and is qualified to JEDEC JESD22 standards for moisture sensitivity and thermal cycling. The SuperSO8 5x6 outline provides a low thermal resistance path to PCB copper, and the exposed drain pad enables direct heat extraction into inner copper planes or an external heat spreader. This combination of low RDS(on), small package, and high pulsed current capability is the defining advantage of the part. Architecturally, the device is a single N-channel enhancement-mode cell array, gate-source threshold typically in the 2.5 V to 3.8 V range to support standard logic-level and 5 V microcontrollers, with on-resistance specified at 10 V VGS for full enhancement. The OptiMOS 5 trench cell delivers low gate charge Qg, which reduces switching losses at high frequency and makes the part especially well-matched to hard-switched buck and synchronous rectifier positions. Total gate charge is a key figure of merit for MHz-frequency DC-DC converters in telecom and server power rails. Typical applications include synchronous rectification in 48 V to 12 V bus converters, hot-swap and OR-ing controllers in telecom and datacom shelves, motor drive half-bridges in industrial 24 V to 48 V systems, and high-current battery protection in e-mobility and energy storage. The 80 V drain rating provides comfortable headroom over standard 48 V nominal buses that may see transients above 60 V during load steps or input surges. The combination of small footprint, high current, and low conduction loss is what differentiates this part. When designing in the BSC019N08NS5ATMA1, pay close attention to PCB layout: the exposed pad is the primary thermal and electrical drain path and must be soldered to a copper plane with multiple thermal vias. Gate drive should be a 10 V source capable of 1 A peak to achieve the specified switching speed; a series gate resistor of 10 to 47 ohm typically damps ringing. Compare every spec against your worst-case SOA, including DC and pulsed conditions, before finalizing the design. This page synthesizes distributor stock, pricing, and 80 V/100 V-class drop-in SuperSO8 alternatives that complement the BSC019N08NS5ATMA1, plus practical PCB and thermal design notes not found in the manufacturer datasheet itself.
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
The Infineon Technologies BSC020N03LSGATMA1 is a 30V N-channel power MOSFET from the OptiMOS 3 family, housed in an 8-pin PG-TDSON-8-1 (TDSON EP) surface-mount package with an exposed thermal pad. It is rated for 28A continuous drain current at 25°C ambient (Ta) and up to 100A continuous drain current at 25°C case temperature (Tc), with a maximum power dissipation of 2.5W (Ta) and 96W (Tc). The part is characterized by an extremely low on-state resistance (RDS(on) of approximately 2.0 mOhm at VGS=10V) and ultra-low gate and output charge, targeting high-density synchronous rectification in point-of-load converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used for switching and amplifying electronic signals. It belongs to the discrete power semiconductor family, hierarchically classified as MOSFET -> transistor -> discrete semiconductor. Within the OptiMOS family, the 30V class targets 12V rail point-of-load (POL) conversion, low-voltage motor drive, hot-swap controllers, and battery management switching stages. The OptiMOS 3 generation specifically balances ultra-low RDS(on) with low gate charge (Qg) and small package footprint, enabling higher switching frequency and reduced conduction loss simultaneously. The BSC020N03LSGATMA1's three defining electrical strengths are its very low RDS(on) (approximately 2.0 mOhm at VGS=10V), 100A pulsed drain current capability at the case, and a compact 5mm x 6mm TDSON-8 footprint with exposed thermal pad for low thermal resistance. According to the Infineon datasheet, the device supports VDS of 30V, VGS of +/-20V, and is fully avalanche-rated, making it robust against inductive switching transients in buck and buck-boost converter designs. Internally, the part uses Infineon's latest-generation trench MOSFET process, which delivers a per-area figure-of-merit (FOM = RDS(on) x Qg) that is best-in-class for 30V parts in this footprint. This enables either lower conduction loss at the same switching frequency, or higher switching frequency at the same conduction loss - a direct lever for designers to shrink magnetics and output capacitance. Typical applications include voltage regulator modules (VRMs) for servers and datacom/telecom, synchronous buck converter low-side switches, hot-swap and OR-ing controllers, battery protection and load switching in 12V distributed systems, and DC motor drive stages. The wide VDS rating also makes it suitable for 19V/24V adapter-input buck regulators with adequate headroom. When designing with this part, prioritize a top-side thermal copper pour directly under the exposed pad, and minimize the source-loop and gate-loop inductance to avoid ringing at the drain node. The exposed pad must be soldered to the PCB for the 96W (Tc) dissipation rating to be meaningful; otherwise, the effective power handling is limited by the 2.5W (Ta) rating. This page synthesizes Infineon datasheet figures, distributor pricing, drop-in alternatives within the OptiMOS 3 family and from competitor vendors, and practical layout/design notes not consolidated on the manufacturer datasheet front page.
BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC021N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 trench technology, delivering 80 V VDS, a maximum drain current of 226 A (Tc), 214 W power dissipation (Tc), and an industry-leading R_DS(on) max of 2.1 mΩ in a SuperSO8 5x6 (PG-TSON-8-3) surface-mount package. The part is supplied on Tape-and-Reel (T&R) as a fully automotive-grade capable power stage. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics: a voltage-controlled three-terminal device in which the gate-source voltage modulates a conductive channel between drain and source. N-channel enhancement-mode power MOSFETs such as BSC021N08NS5ATMA1 form the high-side or low-side switch in DC-DC converters, motor drives, and load switches. OptiMOS 5 is Infineon's fifth-generation 80 V trench platform, offering the lowest R_DS(on) per die area in its class and benefiting from a low figure-of-merit that simultaneously reduces conduction and switching losses. Key features include 80 V drain-source breakdown voltage, 2.1 mΩ maximum R_DS(on) at V_GS = 10 V, 226 A continuous drain current at case temperature 25 °C, ultra-low gate charge Q_G for fast switching, an avalanche-rated single-pulse body diode, 100 % R_G-tested gates for parallel operation, and Pb-free lead plating plus RoHS compliance. The SuperSO8 5x6 package exposes the drain tab as a thermal pad, achieving very low junction-to-case thermal resistance. The OptiMOS 5 cell architecture uses a refined trench gate structure with an optimized epitaxial layer to balance on-resistance against switching charge. Compared with OptiMOS 3 predecessors, the FOM (R_DS(on) × Q_G) is reduced by roughly 50 %, enabling higher switching frequencies and smaller magnetics in telecom, server, and e-mobility DC-DC stages. Typical applications include 48 V mild-hybrid DC-DC converters, telecom OR-ing and hot-swap controllers, server VRM and POL converters, synchronous rectification in telecom bricks, industrial motor drives, and USB-PD / eFuse battery protection paths. The combination of 80 V rating and very low R_DS(on) makes it ideal for systems where every milliohm of conduction loss compounds thermal stress. When designing with this device, place gate-drive components within 5 mm of the gate pin to minimize parasitic loop inductance, and use a 10 V V_GS drive with Kelvin-source connection to fully exploit the low R_DS(on). Heatsink selection must account for the SuperSO8 thermal pad - a 1 oz copper pour of at least 6 cm² is the datasheet reference condition for the rated R_thJA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet.