BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
N.º de pieza: BSC009NE2LS5IATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.15 | $2,15 |
| 10 | $1.92 | $19,20 |
| 100 | $1.61 | $161,00 |
| 500 | $1.34 | $670,00 |
| 1.000 | $1.18 | $1.180,00 |
| 3.000 | $1.02 | $3.060,00 |
BSC009NE2LS5IATMA1 Descripción general
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a P-type body region to form an N-type conduction channel between source and drain. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power-device family (alongside IGBTs and GaN HEMTs), serving as the fundamental switching element in modern switch-mode power supplies, motor drives, and battery-protection circuits. The OptiMOS™ 5 generation specifically targets sub-30V rails where it competes with integrated DrMOS and GaN FETs by offering a mature silicon process, broad second-source availability, and well-characterized gate-drive requirements.
Key electrical parameters include V_DS = 25V maximum, V_GS(th) = 1.0V to 2.0V typical (1.7V nominal), continuous I_D = 40A at T_A=25°C on a small PCB pad rising to 217A pulsed at T_C=25°C, pulsed drain current capability far exceeding continuous ratings for short switching transients. Power dissipation is rated 2.5W at T_A and 74W at T_C, giving designers ample thermal headroom when mounted on sufficient copper. Total gate charge Q_G is 23 nC typical at V_GS=0 to 4.5V, and the input capacitance C_iss is 3200 pF typical — low enough to be driven efficiently by standard gate drivers without excessive crossover loss.
Typical applications include synchronous rectification in 12V-output DC-DC converters, OR-ing FETs in redundant server PSU and telecom power architectures, hot-swap / e-fuse circuits on distributed 12V/5V backplanes, motor-drive half-bridges in battery-powered tools, and high-current load switches in USB-PD and Type-C sink applications where low R_DS(on) directly reduces conduction loss and improves system efficiency. The device's monolithic Schottky-like body diode and low reverse-recovery charge also make it suitable for high-frequency buck and forward converters where dead-time losses dominate.
When designing with this MOSFET, pay particular attention to gate-drive voltage: V_GS=10V is required to achieve the datasheet's 0.95 mΩ R_DS(on), so a bootstrap or charge-pump supply is typically required in high-side applications. Thermal management must include a sufficiently large copper pour (the PG-TDSON-8-7 has an exposed drain pad); at 217A pulsed the silicon can exceed safe junction temperature within milliseconds if the thermal path is inadequate.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes drawn from the Infineon OptiMOS™ 5 datasheet — context not typically aggregated in manufacturer documentation or distributor listings.
Alternativas directas para BSC009NE2LS5IATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC009NE2LS5IATMA1 (mismo factor de forma y huella) — difiere en Technology, Operating Temperature Range, Package, MSL Level, Drain-Source Voltage (VDS).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC012NE2LS5IATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC006NE2LS5IATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC009NE2LS5IATMA1 Valores máximos y características eléctricas
| Manufacturer Part Number | BSC009NE2LS5IATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) |
| Tipo de transistor | N-Channel MOSFET |
| Configuration | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | 25 V |
| Gate-Source Voltage (V_GS) max | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | 2.5 W |
| Power Dissipation (P_D) @ T_C | 74 W |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | 3200 pF |
| Rango de temperatura de funcionamiento | -55°C to +150°C |
| Encapsulado | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Matte Tin (e3 per JESD-609) |
| Number of Terminals | 8 |
| Estado RoHS | Compliant |
Guía de configuración de pines de BSC009NE2LS5IATMA1 pg-tdson-8-7 (superso8 5x6 mm)
Configuración de pines para BSC009NE2LS5IATMA1 (encapsulado pg-tdson-8-7 (superso8 5x6 mm)). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para BSC009NE2LS5IATMA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSC009NE2LS5IATMA1 es adecuado para 7 aplicacións: 12V Synchronous Rectification, OR-ing FET for Redundant Power, Hot-Swap / e-Fuse Switch, Battery-Protection Load Switch, Motor-Drive Half-Bridge, USB-PD Sink Load Switch, Point-of-Load DC-DC Converter.
12V Synchronous Rectification
Used as the low-side FET in 12V-output buck converters where its 0.95 mΩ R_DS(on) and 23 nC Q_G minimize conduction and switching loss at 300-500 kHz. Per the Infineon datasheet, the device's low FOM (R_DS(on)×Q_G) outperforms prior OptiMOS generations, making it a strong fit for server and telecom point-of-load regulators seeking >97% efficiency.
Recomendado
OR-ing FET for Redundant Power
Used as an OR-ing FET in N+1 redundant 12V server PSU and telecom shelf architectures. The BSC009NE2LS5IATMA1's 0.95 mΩ R_DS(on) yields only 1.7W dissipation at 43A load per rail, while the fast body diode enables hot-swap insertion without ringing. The PG-TDSON-8-7 footprint accepts a heatsink tab for additional thermal margin in dense backplane designs.
Recomendado
Hot-Swap / e-Fuse Switch
Used as the main switching element in 12V hot-swap controllers on storage and networking backplanes. Per the Infineon datasheet, the device's 217A pulsed rating handles inrush transients from large bulk capacitors, while the 0.95 mΩ R_DS(on) keeps steady-state loss under 1W per FET at typical 30A loads, simplifying thermal management on FR-4 boards.
Recomendado
Battery-Protection Load Switch
Employed as the main disconnect FET in 3-4S lithium battery packs and portable power tools. The BSC009NE2LS5IATMA1's 25V V_DS rating, 0.95 mΩ R_DS(on), and SuperSO8 5x6 footprint deliver low-loss load switching in a compact PCB area. The 1.7V V_GS(th) allows direct drive from a low-voltage battery-monitoring MCU without auxiliary charge-pump circuitry.
Recomendado
Motor-Drive Half-Bridge
Configured as low-side switch in 12V/24V brushless DC motor half-bridges for power tools, fans, and small e-mobility drives. Per the Infineon datasheet, the device's 0.95 mΩ R_DS(on) minimizes I²R losses during high-torque PWM cycles at 20-50 kHz, and the rugged avalanche-rated body diode absorbs inductive kickback without external TVS clamps.
Recomendado
USB-PD Sink Load Switch
Used as the main VBUS load switch in USB-PD sink applications delivering 5V/3A-5A to downstream devices. The BSC009NE2LS5IATMA1's 25V V_DS rating and 0.95 mΩ R_DS(on) accommodate 20V USB-PD negotiation profiles while keeping conduction loss under 250 mW at 5A, enabling efficient Type-C docking-station and hub designs without external heatsinking.
Recomendado
Point-of-Load DC-DC Converter
Used as the synchronous FET in buck converters stepping 12V down to 1-3.3V core voltages for FPGAs, ASICs, and processors. Per the Infineon datasheet, the 0.95 mΩ R_DS(on) and 23 nC Q_G reduce total loss to under 2% at full load, supporting the high-current (>30A) transient demands of modern processors with sub-microsecond load-step response.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC009NE2LS5IATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC012NE2LS5IATMA1 | BSC006NE2LS5IATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TSDSON-8 (3x3 mm) |
| V_DS max | 25 V | 25 V | 25 V | 25 V |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | 1.2 mΩ (+26%) | 0.6 mΩ (-37%) | 3.1 mΩ (+226%) |
| Continuous I_D @ T_C=25°C | 217 A (pulsed) | ~200 A (pulsed) | ~250 A (pulsed) | ~80 A (pulsed) |
| Total Gate Charge Q_G typ | 23 nC | 20 nC | 30 nC | 9 nC |
| Technology | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) |
| RoHS / Lead-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Diferenciadores clave
- Lower R_DS(on) in same package than BSC012 variant (frente a BSC012NE2LS5IATMA1)
- Higher current capability in same package than BSC006 (frente a BSC006NE2LS5IATMA1)
- Larger package (5x6) than BSZ031 with better thermal performance (frente a BSZ031NE2LS5ATMA1)
Notas de diseño
Estimated: at 100A continuous conduction with V_GS=10V, power dissipation is P=I²×R = 100²×0.95mΩ ≈ 9.5W at T_J=25°C and roughly 13W at T_J=125°C (R_DS(on) rises ~40% hot). The PG-TDSON-8-7 package has θ_JC ≈ 1.5°C/W on the exposed drain pad; on a 1-square-inch 2-oz copper pour θ_JA falls to ~35°C/W. At 9.5W on a 35°C/W board, junction rise is ~330°C — clearly insufficient, so heatsinking or wider copper (≥3 sq-in 4-layer) is required for continuous 100A operation. For ≤40A typical applications, a 1 sq-in 2-oz pour is adequate.
Per the Infineon PG-TDSON-8-7 land-pattern recommendation, route the high-current drain on the top layer directly into the exposed pad — never through vias, since via resistance and inductance dominate at 100A+ peaks. Use multiple thermal vias (≥9×0.3mm) under the pad to inner copper planes. Keep the gate loop (gate-driver → gate resistor → gate pin → source pin → driver return) under 5 nH to prevent dv/dt-induced ringing that can cause MOSFET shoot-through in half-bridge configurations.
Do not assume V_GS(th)=1.7V is sufficient to fully enhance the device — at V_GS=4.5V R_DS(on) is roughly 2× the V_GS=10V figure (per Infineon datasheet characterization curves). For synchronous-rectifier bootstrap supplies, the bootstrap voltage may sag below 8V at light load, increasing conduction loss by 30-50%; use a charge pump or external 10V bias when possible. Also note that the device's avalanche rating is for unclamped inductive switching only — for H-bridge motor-drive applications, add external TVS diodes to absorb repetitive avalanche energy.
Información de cumplimiento
RoHS compliant and lead-free per JESD-609 e3 terminal finish (matte tin) per Infineon product page. AEC-Q100 not applicable — this is a discrete MOSFET, not qualified to automotive grade; for automotive use consider Infineon's automotive-grade OptiMOS 5 variants. Halogen-free status not explicitly stated in provided data.
