Controladores de MOSFET de potencia
Productos (714)
ICE3PCS02GXUMA1 - CCM PFC Controller, 85-265VAC, 100kHz | Infineon
The Infineon ICE3PCS02GXUMA1 is a 3rd-generation standalone Power Factor Correction (PFC) controller IC for active Continuous Conduction Mode (CCM) boost converters, supplied in an 8-pin PG-DSO package. It operates directly from an 85 VAC to 265 VAC wide-range rectified AC input, provides an adjustable gate switching frequency of 21 kHz to 100 kHz, and integrates a digital control voltage loop with an internal 2.5 V reference trimmed for tight output regulation. The IC draws a typical quiescent current of 1.4 mA and supports external synchronization. A Power Factor Correction (PFC) controller is a power-management IC that shapes the input current of an AC-DC converter so it is in phase with the input voltage, raising the power factor toward unity and reducing line-frequency harmonic distortion. It belongs to the broader PMIC hierarchy: PFC controller -> AC-DC controller -> power management IC -> semiconductor. Active CCM PFC, the topology addressed by the ICE3PCS02G, is the most common technique in mid- to high-power offline converters above 75 W because it combines low peak currents with predictable boost-inductor behavior. Key features of the ICE3PCS02G family include a low 0.2 V peak-current-limit threshold that minimizes sense-resistor dissipation, integrated digital control voltage loop that removes the need for an external compensation network, adjustable gate switching frequency from 21 kHz to 100 kHz for EMI optimization, the ability to synchronize to an external frequency source, and comprehensive protection features including VCC undervoltage lockout and overcurrent protection. Compared to the 1st-generation ICE1PCS0x and 2nd-generation ICE2PCS0x families, the 3rd-generation IC offers a tighter reference and digital-loop simplification that reduces external BOM by roughly twenty components per design. The device uses Infineon's high-voltage BCD process that integrates the start-up cell, gate driver, and control logic on a single die rated for the surge environment of an offline front-end. This integration enables the compact 8-pin PG-DSO footprint and eliminates the auxiliary winding typically needed to power the controller in older designs. Typical applications include 100 W to 800 W SMPS front-ends for desktop PCs, gaming consoles, plasma/LCD televisions, and industrial power supplies requiring EN61000-3-2 compliance. The 100 kHz upper switching limit and synchronization input make it well suited to coordinate with the downstream LLC or quasi-resonant converter in two-stage converter architectures. Designers should plan for thermal management of the gate-driver dissipation at high switching frequency and for input-bridge bulk-cap sizing that determines hold-up time. The controller's wide input range allows a single board design to ship globally without input-voltage strapping. This page synthesizes distributor pricing, drop-in alternatives within the 8-pin PG-DSO footprint, and practical PFC design notes not found in the standalone manufacturer datasheet.
ICE3PCS03GXUMA1 - 8-Pin CCM PFC Controller, 85-265VAC | Infineon
The Infineon ICE3PCS03GXUMA1 is an 8-pin wide-input-range Continuous Conduction Mode (CCM) Power Factor Correction (PFC) controller IC housed in a PG-DSO-8 (SOIC-8) package, designed for active CCM PFC converters operating from 85VAC to 265VAC universal mains input. The device features an adjustable switching frequency range of 21 kHz to 250 kHz, a precision 2.5 V internal reference, integrated digital control voltage loop, low peak current limit threshold of 0.2 V, and the ability to synchronize with an external switching frequency source for coordinated multi-stage power designs. A Power Factor Correction (PFC) controller is a power management integrated circuit that shapes the input current of an AC/DC converter to be in phase with the input voltage, raising the power factor toward unity and reducing harmonic distortion. Within the broader hierarchy, a PFC controller is a type of AC/DC converter control IC, which sits under power management ICs in the semiconductor taxonomy. CCM operation means the inductor current stays continuously above zero, reducing peak current stress and EMI versus Discontinuous Conduction Mode (DCM) at high power levels. Key technical features include a low internal reference trimmed at 2.5 V for high-accuracy output voltage regulation, a very low start-up current to minimize standby losses, an integrated digital control voltage loop that eliminates external compensation components, and built-in protection functions including output overvoltage, undervoltage, open-loop, and overcurrent protection. The IC is the third generation of Infineon's CoolSET/PFC family, succeeding the ICE1PCS0x and ICE2PCS0x series with smaller footprint, fewer external parts, and improved light-load efficiency. Typical applications include 80 PLUS compliant desktop PC SMPS, 100 W to 1 kW industrial switch-mode power supplies, flat-panel TV power supplies, server and telecom rectifiers, LED driver front-end PFC stages, and white-goods inverter power boards. The wide 85-265 VAC input range makes the part suitable for global-market products that must operate from both 115 V and 230 V nominal mains without component changes. When designing with this controller, place the current-sense resistor between the boost MOSFET source and ground using short, wide traces to avoid switching noise injection. Use a low-ESR X2-rated film capacitor at the rectified mains input, and ensure the gate-drive trace to the external boost MOSFET is kept short to limit parasitic inductance and ringing.
IPS4260L - Quad 2A Low-Side Intelligent Switch | STMicroelectronics
The STMicroelectronics IPS4260L is a monolithic quad low-side intelligent power switch that integrates four independent N-channel MOSFET output stages with per-channel protection and diagnostic interfaces, each rated to 2 A continuous drain current, in a 20-pin HTSSOP package with an exposed thermal pad. The device supports switching frequencies up to 250 kHz and can drive capacitive, resistive, or inductive loads whose high-side terminal is tied to the supply rail, while its channels can be paralleled to lower on-resistance and reduce per-channel dissipation. A low-side power switch (also called a low-side driver or smart high-side switch's complement) is a power distribution building block that controls current flow between a grounded load and the return path. Compared with high-side switches, low-side drivers simplify gate drive requirements because the source sits on ground, but they cannot protect the load from supply shorts. The IPS4260L belongs to the broader category of intelligent power switches (IPS) within power management ICs, which integrate MOSFETs, gate drivers, current limiting, thermal protection, and fault feedback into a single die - a substantial integration step beyond discrete MOSFETs or relay-based switching. Key features of the IPS4260L include per-channel independent control, 2 A continuous current per channel (with paralleling supported), built-in protection against over-current, over-temperature, short circuit to VCC, and ground-loss, plus open-drain diagnostic outputs that signal fault conditions to a host microcontroller. The monolithic construction eliminates wiring parasitics and improves thermal coupling, while the HTSSOP-20 exposed-pad package provides low thermal resistance for sustained high-current operation without external heatsinking. Architecturally, each channel of the IPS4260L combines a vertical N-channel power MOSFET, a charge-pump gate driver (needed because the source rises with the load during switching), accurate current-limit circuitry, and a thermal sensor. The fault logic consolidates protection events and reports them through a shared status interface, simplifying host-side firmware and reducing MCU GPIO count on multi-channel boards. Typical applications include programmable logic controller (PLC) digital outputs, industrial solenoid and valve drivers, relay replacement in automation cabinets, multi-channel LED driving, and general low-side switching in factory automation, building control, and process control systems. When designing with the IPS4260L, observe the derating guidelines in the manufacturer datasheet: parallel channels reduce channel-to-channel temperature rise; PCB layout should maximize copper area under the exposed pad and minimize loop inductance on the switching path to limit voltage transients on inductive loads. A freewheeling (clamp) diode is generally not needed because the device includes internal avalanche-rated MOSFETs, but external protection may still be required for very high energy inductive loads.
IPS4260LM - Quad Low-Side Intelligent Power Switch | STMicroelectronics
The STMicroelectronics IPS4260LM is a monolithic quad low-side intelligent power switch capable of switching up to 2 A continuous per channel (250 kHz max PWM), housed in a 20-pin HTSSOP package with exposed thermal pad. It integrates four independent N-channel MOSFET outputs to drive resistive, capacitive, or inductive loads connected to a common supply rail, while the low-side switch topology returns load current to ground. An intelligent power switch (IPS) is a category of smart power IC that combines one or more power MOSFETs with protection, diagnostic, and interface logic in a single die. IPS parts sit hierarchically as: power switch -> load driver -> power management IC -> semiconductor. They are commonly used in industrial digital outputs, programmable logic controller (PLC) interfaces, and micro-controller expansion where reliable switching, fault feedback, and minimal external circuitry are required. Key features include four independent 2 A channels, an internal charge pump generating a gate drive, integrated over-current and over-temperature protection, per-channel open-drain status flag outputs, and compatibility with 3.3 V or 5 V logic-level inputs. The device operates from 8 V to 50 V load supply, with a typical Rds(on) of 0.3 ohm per channel at 25 C, ensuring low conduction loss in industrial 24 V systems. The IPS4260LM uses a vertical power MOSFET process with an embedded charge pump, enabling low-loss switching at high PWM frequencies up to 250 kHz. Built-in programmable current limiting, thermal shutdown with auto-retry, and per-channel diagnostics reduce MCU firmware overhead while providing robust protection against short circuits and load wiring faults. Typical applications include industrial digital output modules (24 V solenoids, relays, valves), PLC and STM32 Nucleo expansion boards, building automation, low-side lamp drivers, and motor direction/half-bridge switch legs with paired high-side companion parts. Its 50 V absolute maximum also makes it suitable for process control and HVAC actuator interfaces. When designing with the IPS4260LM, ensure the exposed thermal pad is soldered to a minimum 1 sq inch copper pour and place bypass capacitors within 5 mm of VCC and GND. Validate inrush behavior for capacitive loads because the internal current limit may trip; consider soft-start firmware if high-C loads are required.
IPS521R - 5A Fully Protected High Side MOSFET Switch | Infineon
The Infineon IPS521R is a fully protected five-terminal high-side intelligent power switch (IPS) housed in a TO-220-5 package. It integrates a vertical N-channel power MOSFET with built-in short-circuit, overtemperature, ESD protection, inductive load handling, and diagnostic feedback. The output current is internally limited to a regulated Ilim value when the load tries to exceed the safe operating area, while an active clamp absorbs the inductive kickback during load turn-off. According to the Infineon/International Rectifier datasheet, the device targets 24V industrial and automotive relay-replacement applications where a single chip must replace a discrete MOSFET plus fuse plus protection circuitry. A high-side switch (HSS) is a power-distribution topology that places the switching element between the positive supply rail and the load, returning load current to system ground. Compared with a low-side switch, a high-side switch simplifies load wiring, eliminates ground-referenced load returns, and allows direct interface with logic inputs while providing inherent protection against short-to-ground events. The IPS521R is therefore classified within the broader hierarchy: intelligent power switch -> high-side driver -> power distribution switch -> power management IC. Key features include a 5A continuous load current rating, integrated active over-temperature shutdown with auto-restart, current-limit foldback, open-load detection in the off state, status feedback through an isolated logic ground, and ESD protection on every pin. The logic ground terminal allows the device to be driven from a low-voltage microcontroller without ground-shift issues, and the diagnostic flag can be wired directly to an MCU interrupt to report fault conditions. The IPS521R is built on International Rectifier's proprietary HEXFET power-MOSFET process combined with mixed-signal CMOS control, yielding a single monolithic die that contains both the power stage and the protection logic. The active clamp structure uses the MOSFET body-drain avalanche capability to absorb unclamped inductive transients, which is critical when switching solenoids, relays, and motors that store energy in their windings. Typical applications include industrial PLC output modules, automotive body electronics (lamp drivers, solenoid drivers, valve drivers), 24V building automation, and battery-powered equipment requiring eFuse-style protection. The device is pin-compatible with the legacy IPS521 and IPS521S families, simplifying existing designs. When designing with the IPS521R, ensure adequate heatsinking for the TO-220 tab and respect the SOA envelope for inrush loads such as incandescent lamps and motor startup. Decouple Vcc with at least 1uF of low-impedance capacitance placed within 5 mm of the supply pin.
IPS521S - 5V High-Side Smart Power Switch 1.9A | Infineon
The Infineon IPS521S is a fully protected five-terminal high-side N-channel power MOSFET switch in a D2PAK (SMD-220, 5-lead) surface-mount package, delivering up to 1.9 A continuous output current and qualified for an operating supply range typically used in 5 V to 35 V load-driving systems. The device integrates short-circuit current limiting, over-temperature shutdown with auto-restart, ESD protection, active inductive clamp, open-load detection, and a diagnostic status feedback pin, forming a complete Intelligent Power Switch (IPS) block. According to the manufacturer datasheet referenced by DigiKey and Mouser listings, the output is actively limited to Ilim when an overload event occurs and the device automatically recovers once the fault is removed. A high-side switch is a power-MOSFET or intelligent-power stage placed between the positive supply rail and the load, allowing the load to be turned on and off with a low-voltage logic signal referenced to ground. Compared with a low-side switch, a high-side topology breaks the load's return-path current when off, which is the preferred configuration for safety-critical switching of lamps, solenoids, relays, and motor windings where a low-side switch would leave dangerous voltages exposed to chassis ground. The IPS521S belongs to the broader category of Intelligent Power Switches (IPS), which integrate the power FET, gate driver, protection logic, and diagnostics into a single IC to replace discrete MOSFET-plus-driver designs. Key features include logic-level CMOS-compatible input, isolated logic ground for noise-immune control, open-drain diagnostic feedback, low quiescent current in standby, and built-in active clamp for driving inductive loads such as solenoids, relays, and DC motors without external freewheeling diodes in many applications. The D2PAK package provides a low thermal resistance of approximately 50 C/W junction-to-ambient on a standard JEDEC test board, enabling continuous 1.9 A operation with adequate PCB copper area. Operating junction temperature spans -40 C to +150 C, suiting industrial and automotive underhood environments. The IPS521S uses an N-channel MOSFET on the high side driven by an internal charge pump, allowing very low Rds(on) (tens of milliohms) and therefore low conduction loss. The integrated current-limit loop folds the output characteristic back when load current exceeds Ilim, protecting the FET and wiring, while the thermal sensor forces a shutdown-and-auto-restart cycle if Tj exceeds the protection threshold. Status feedback reports fault conditions (short circuit, open load, overtemperature) to the host microcontroller. Typical applications include automotive body electronics (lamp drivers, seat heaters, mirror heaters, wiper controllers), industrial PLC discrete outputs, 24 V solenoid and valve drivers, DC motor drivers for small brushed loads, and any 5 V/12 V/24 V high-side switching where protection and diagnostics are required. When laying out the PCB, place the IPS521S on a minimum 1 square-inch copper pour to keep the junction temperature within safe limits at full 1.9 A load. This page combines distributor pricing, parametric drop-in alternatives, and practical PCB design notes that the manufacturer datasheet alone does not surface, supporting faster sourcing decisions for engineers evaluating or replacing the IPS521S.
IPS6041PBF - 40V High-Side Switch, 2.3A, TO-220AB-5 | Infineon
The Infineon IPS6041PBF is an intelligent high-side power switch rated for 40V drain-to-source voltage and approximately 2.3A continuous load current, housed in a 5-lead TO-220AB package with an exposed tab. Designed for automotive and industrial power distribution, it integrates a vertical N-channel power MOSFET with a CMOS control section on the same silicon, providing protection and diagnostics that discrete solutions cannot match in such a small footprint. The part is lead-free (PbF suffix) and qualified to automotive-grade reliability expectations. A high-side switch (HSS) is a power-MOSFET/IC combination that controls a load by placing the switching element between the supply rail and the load, rather than between the load and ground. This topology simplifies wiring harnesses, allows multiple loads to share a common ground, and provides inherent protection against short-to-ground faults. Within the broader taxonomy, the IPS6041 sits at: high-side switch -> load driver / power distribution switch -> power management IC -> semiconductor. Equivalent common names are "smart high-side switch," "intelligent power switch (IPS)," and "protected MOSFET." Key features include over-temperature shutdown with auto-restart, short-circuit protection with internal current limiting, reverse-battery protection that turns on the MOSFET to dissipate fault energy, an active clamp for inductive loads, open-load detection in both ON and OFF states, and full diagnostic feedback through a status pin. These integrated protections reduce external component count and PCB area compared to discrete MOSFET plus fuse designs. The internal current limit is set to approximately 7A (Ilim), well above the continuous rating, so the device survives brief inrush events such as lamp cold-filament or motor-start transients without nuisance tripping. Diagnostic output (pin 4) signals fault conditions to a microcontroller via a pull-up to the logic supply, enabling OBD-compliant fault reporting in automotive body-control modules. Typical applications include automotive body electronics (lighting, door locks, window lifters, seat heaters), industrial PLC outputs, 24V solenoid and valve drivers, and any 12V/24V load that benefits from diagnostic feedback and integrated protection. When designing with this device, derate continuous current to about 1A at TA = 85C in free air, or use the exposed tab with adequate PCB copper to sustain the full 2.3A rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IR1168STRPBF - 200V Dual Smart SR Controller 8-SOIC | Infineon
The Infineon IR1168STRPBF is a 200V dual smart secondary-side rectifier driver IC designed to drive two N-channel power MOSFETs used as synchronous rectifiers in resonant converter topologies, housed in an 8-pin SOIC (NB) package. It features a 200V proprietary IC technology, supports switching frequencies up to 500 kHz, and provides a 4A peak turn-off drive current with anti-bounce logic and UVLO protection. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers in resonant half-bridge converters. A synchronous rectifier controller (SR controller) is a type of secondary-side power supply controller that replaces traditional Schottky diodes with low-RDS(on) MOSFETs to dramatically reduce conduction losses and improve overall efficiency. SR controllers sit within the broader power management IC hierarchy (PMIC -> power supply controller -> secondary-side controller -> synchronous rectifier driver) and are essential building blocks for high-efficiency isolated DC-DC converters used in adapters, servers, telecom rectifiers, and industrial SMPS. Key differentiating features include the dual-channel architecture that drives two rectifiers from a single IC, a wide VCC operating range of 8.6V to 18V with internal UVLO, 200V drain-to-source sensing capability for direct connection to the rectifier MOSFET drains, and 4A peak gate turn-off current that eliminates the body-diode conduction period to maximize efficiency. The integrated anti-bounce logic prevents false triggering caused by PCB parasitics and MOSFET ringing. Technically, the IR1168STRPBF uses a proprietary high-voltage IC process that integrates 200V-rated sensing transistors alongside low-voltage control logic on the same die, allowing direct sensing of the drain-to-source voltage of each rectifier MOSFET without external level-shifting circuitry. The internal state machine detects when the MOSFET channel is conducting (forward current flow) and turns the gate on, then detects the body-diode conduction and turns the gate off just before the next commutation cycle, minimizing dead time and reverse recovery losses. Typical applications include resonant half-bridge LLC converters for high-efficiency adapters, telecom and server silver-box / rectifiers, industrial SMPS modules, and any isolated DC-DC topology where two low-side rectifiers are used on the secondary side. Compared to discrete Schottky rectifiers, the IR1168STRPBF-based solution typically delivers 1-3% efficiency improvement at full load, particularly in 200W-2kW power ranges. When designing with this device, careful attention must be paid to the gate drive loop layout to minimize parasitic inductance, and the drain-to-source sensing pin connections must be kept short and direct to the MOSFET to avoid false triggering from noise. The 8-pin SOIC package provides adequate thermal performance for typical rectifier applications where gate charge losses dominate rather than IC conduction losses. This page synthesizes distributor pricing, drop-in same-package alternatives, design notes and resonant converter application context not found in the manufacturer datasheet alone.
IR2010SPBF - 200V Half-Bridge Gate Driver 3A | Infineon
The Infineon IR2010SPBF is a 200 V high- and low-side gate driver IC delivering 3 A source/sink drive current, packaged in a 16-pin SOIC. It features independent high-side and low-side referenced output channels designed to drive power MOSFETs and IGBTs in half-bridge topologies, with CMOS/LSTTL-compatible logic inputs down to 3.0 V logic and matched propagation delays of 95 ns typical. A half-bridge gate driver is a specialized power-management IC that produces two synchronized gate-drive signals - one referenced to the high-side floating supply and one referenced to ground - to alternately switch the upper and lower switches of a half-bridge power stage. Gate drivers sit hierarchically below power MOSFETs/IGBTs in the power-converter signal chain, between low-power control logic (microcontroller, PWM controller) and the high-current switching devices. They provide level shifting, bootstrap drive for the high-side switch, and strong gate drive to minimize switching losses. The IR2010SPBF features high pulse-current buffer stages designed for minimum driver cross-conduction, a typical 95 ns propagation delay matched between high and low channels, and built-in shutdown logic. With 200 V maximum offset voltage and 3 A peak gate-drive capability, it supports switching frequencies well into the audio Class D and DC-DC converter application space. The floating channel operates up to 200 V and is designed for bootstrap operation. Typical applications include audio Class D amplifiers, DC-DC converters, motor drives for small brushless DC motors, and half-bridge / full-bridge power stages in industrial controls. The wide 10 V to 20 V supply range (VCC for low side, VB-VS for high side) and matched delays make it suitable for high-fidelity audio amplification and switched-mode power supplies. When designing with this part, select the bootstrap capacitor carefully (typically 0.1 uF to 1 uF ceramic) to ensure the high-side supply is refreshed each switching cycle, and respect the absolute maximum VS offset of 200 V. This page synthesizes distributor pricing, drop-in alternatives, and design notes not assembled in the manufacturer datasheet alone.
IR2010STRPBF - 200V 3A Half-Bridge Gate Driver | Infineon
The Infineon IR2010STRPBF is a high-power, high-voltage, high-speed half-bridge gate driver IC for power MOSFETs and IGBTs, delivering 3 A source/sink output current and supporting up to 200 V high-side rail operation in a 16-pin SOIC (DW) package. A half-bridge gate driver is an integrated circuit that drives the high-side and low-side switches of a power half-bridge by translating low-voltage logic-level PWM signals from a microcontroller into high-current gate drive pulses capable of rapidly switching power MOSFETs or IGBTs. As a member of the gate driver category, it sits hierarchically above discrete gate-drive transistors and below full-bridge or three-phase driver ICs in the power-management semiconductor taxonomy. Key features of the IR2010STRPBF include a floating high-side channel designed for bootstrap operation up to 200 V, gate drive supply (VCC) range of 10 V to 20 V, separate logic supply (VBS) range of 3.3 V to 20 V, 3.3 V logic-compatible inputs, undervoltage lockout (UVLO) for both high-side and low-side channels, dV/dt immunity, and tolerance to negative transient voltages on the switch node. The 95 ns typical propagation delay and matched channel-to-channel matching make it well suited to high-frequency switching. Architecturally, the IR2010STRPBF uses a proprietary HVIC junction-isolation process that allows the high-side channel to float above the low-side ground reference, level-shift the input command, and drive an external N-channel MOSFET or IGBT through a bootstrap capacitor. The 16-SOIC package provides thermal resistance suitable for industrial-class switching frequencies, and the tape-and-reel (TR) shipping format supports high-volume SMT assembly. Typical applications for this driver include audio Class D amplifiers, where the IR2010STRPBF's 95 ns propagation delay and matched channels preserve audio linearity; DC-DC synchronous buck and boost converters; motor-driver half-bridges up to 200 V bus; and any switched-mode power topology requiring a high-side bootstrap-capable half-bridge stage. It is also widely deployed in low-power solar inverters and LED drivers operating at bus voltages below 200 V. When designing with the IR2010STRPBF, ensure that the bootstrap capacitor is sized to refresh the floating supply on every PWM cycle and that VCC decoupling follows Infineon's recommended 0.1 microfarad and electrolytic combination to suppress switching-node ringing. Use Kelvin-source sensing where possible to avoid ground bounce. This page synthesizes distributor pricing, drop-in alternatives within the 16-SOIC footprint, and practical design considerations not consolidated on any single distributor page.
IR2011SPBF - 200V High/Low-Side Gate Driver, 1A, 8-SOIC | Infineon
The Infineon IR2011SPBF is a 200 V high and low-side gate driver IC inverting in an 8-SOIC (DSO-8) package, providing 1 A source/sink output currents for IGBT and power MOSFET switching. It features independent high-side and low-side referenced output channels, gate drive supply range from 10 V to 20 V, and is targeted at Audio Class D amplifiers, DC-DC converters, and motor drive half-bridge stages. A gate driver is an integrated power amplifier that sits between a low-power logic controller (microcontroller, DSP, or PWM generator) and a power semiconductor switch (MOSFET, IGBT, GaN). Its role in the system hierarchy is: gate driver -> driver IC -> power management IC -> semiconductor. By delivering high peak gate currents (typically 1-4 A), the driver charges and discharges the MOSFET gate capacitance in tens of nanoseconds, which is essential for keeping switching losses low and for preventing shoot-through in half-bridge topologies. The IR2011 belongs to the high-voltage floating-channel driver family, where the high-side channel is level-shifted via a bootstrap capacitor so it can drive an N-channel MOSFET referenced to the switching node. Key features include 200 V absolute maximum offset voltage on the high-side channel, matched propagation delays for high-frequency operation, logic inputs compatible with CMOS or LSTTL down to 3.0 V, and dV/dt immunity to reject fast switching transients on the floating rail. The output stage uses a high pulse-current buffer designed to minimize driver cross-conduction. The part is inverting, meaning a logic-high input on HIN/LIN pulls the corresponding gate output low. Architecturally the IR2011 uses a proprietary HVIC process that integrates low-voltage CMOS logic with a 200 V-rated level-shifter and latch, allowing the high-side channel to operate with a floating supply up to 200 V above ground. The matched propagation delay between high-side and low-side channels (typically 80 ns) simplifies dead-time calculation in Class D and motor-drive applications, while the 1 A peak source/sink current enables switching of MOSFETs in the TO-220, TO-247, and D2PAK package families at frequencies up to several hundred kHz. Typical applications include Class D audio amplifiers, where two IR2011 devices drive a full-bridge output stage, half-bridge and full-bridge DC-DC converters, motor drive inverters for small BLDC and PMSM motors, and switched-mode power supplies. The wide 200 V rating also suits solar micro-inverters and telecom 48 V-rail converters when paired with appropriately rated power MOSFETs. When designing with this device, a bootstrap diode and capacitor network on the VBS pin is mandatory to generate the floating supply for the high-side channel. The bootstrap capacitor value depends on the operating frequency and gate charge of the driven MOSFET, but typical designs use 0.1 uF to 1 uF ceramic capacitors paired with a fast-recovery diode such as the LL4148 or a dedicated bootstrap diode. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes for the IR2011SPBF that are not found in the manufacturer datasheet alone.
IR2011STRPBF - 200V Half-Bridge Gate Driver | Infineon | SOIC-8
The Infineon IR2011STRPBF is a 200 V high-side and low-side gate driver IC housed in an 8-lead SOIC package, designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations. The device features typical 1 A source and 1 A sink output currents, a gate drive supply range of 10 V to 20 V, and matched propagation delays (typically 80 ns turn-on, 60 ns turn-off) to simplify use in high-frequency switching applications. A gate driver IC (also called a MOSFET driver or IGBT driver) is a power management semiconductor that sits between a low-power control signal (from a microcontroller or PWM controller) and a high-current power switch. By providing high peak currents and rapid voltage transitions, gate drivers overcome the large input capacitance of power MOSFETs/IGBTs, enabling fast switching that minimizes switching losses and improves converter efficiency. Gate drivers are critical building blocks within the broader power management IC hierarchy. Key features include a floating channel designed for bootstrap operation that is fully operational to +200 V, tolerance to negative transient voltages with dV/dt immunity, and independent logic inputs compatible with CMOS or LSTTL output down to 3.0 V logic. The high pulse current buffer stage minimizes driver cross-conduction, while matched propagation delays simplify high-frequency design. The floating high-side channel can drive an N-channel power MOSFET configured in the high-side position of a half-bridge. Typical applications include DC-DC converters, motor drive half-bridges, electronic ballasts for lighting, and Class D audio amplifiers. The IR2011STRPBF is well-suited for any topology requiring high-side/low-side drive with up to 200 V bus voltage and switching frequencies up to several hundred kHz. When designing with the IR2011, a bootstrap diode and capacitor network is required for the high-side supply. Ensure the bootstrap capacitor is sized to maintain VBS above the undervoltage lockout threshold under worst-case duty cycle and load conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IR2101PBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2101PBF is a 600 V high-side and low-side gate driver IC that delivers 0.21 A source and 0.36 A sink peak currents for driving power MOSFETs and IGBTs in half-bridge topologies. Housed in an 8-pin PDIP through-hole package, it accepts a gate drive supply range of 10 V to 20 V and supports logic inputs down to 3.3 V, making it compatible with modern microcontrollers and DSPs. The part is fully operational to +600 V, tolerant to negative transient voltage, and immune to high dV/dt switching noise. A gate driver IC is a specialized power management device that translates low-power PWM logic signals from a controller into the high-current gate drive required to switch a power transistor quickly and efficiently. Gate drivers sit between the control logic (MCU, DSP, analog controller) and the power stage (MOSFET, IGBT, GaN HEMT) in the system hierarchy: gate driver -> power management IC -> semiconductor. The IR2101PBF belongs to the half-bridge (high-side + low-side) subcategory, which is essential for synchronous buck converters, motor drives, class-D amplifiers, and any topology that switches a half-bridge node at high frequency. Key features of the IR2101PBF include independent high and low side referenced output channels, an undervoltage lockout that protects the power stage from insufficient gate drive, and a proprietary HVIC and latch-immune CMOS process that enables rugged monolithic construction. Typical propagation delay is around 160 ns, providing adequate timing margin for switching frequencies up to several hundred kilohertz. The floating channel design supports bootstrap operation for the high-side supply, eliminating the need for an isolated DC/DC converter. Typical applications include SMPS half-bridge converters, three-phase inverter low-side gate drive stages (paired with a high-side-only driver), HID lamp ballasts, motor control pre-drivers, and class-D audio amplifiers. The wide VCC range and standard CMOS/LSTTL logic input make it a drop-in choice for digital controllers using 3.3 V, 5 V, or 15 V GPIO. When designing with this part, ensure the bootstrap diode and capacitor values are sized for the switching frequency and high-side quiescent current. Verify that VBS does not collapse below the UVLO threshold during the high-side on-time, otherwise the high-side FET may briefly operate in linear region causing shoot-through risk.
IR2101STRPBF - 600V Half-Bridge Gate Driver, 8-SOIC | Infineon
The Infineon IR2101STRPBF is a 600 V high-speed half-bridge gate driver IC in an 8-pin SOIC (SO-8) package, delivering 0.21 A source / 0.36 A sink drive current for power MOSFETs and IGBTs. It integrates a bootstrap diode and supports a VCC gate-drive supply of 10 V to 20 V with logic inputs compatible with 3.3 V, 5 V, and 15 V standards. A gate driver is a power-management IC that sits between a low-power controller (logic-level PWM) and the gate of a discrete power transistor (MOSFET or IGBT). It level-shifts the logic-level PWM up to the rail needed to drive the high-side switch in a half-bridge or full-bridge topology, and provides the brief bursts of high peak current needed to quickly charge and discharge the power device's gate capacitance. In the system hierarchy, the gate driver belongs to the power-management IC family and is the enabling link between a digital controller and the high-current switching stage in any SMPS, motor-drive, or Class-D audio amplifier. Key features include an integrated bootstrap diode eliminating the need for an external discrete component, undervoltage lockout (UVLO) for both the VCC and VBS rails, matched propagation delays between high-side and low-side channels, and dV/dt immunity engineered to reject the fast transient edges present in hard-switched half-bridge nodes. The floating high-side channel operates up to 600 V above the return, and the device tolerates negative transient voltages on the VS pin typical of half-bridge switching stages. Architecturally, the device uses Infineon's HVIC and latch-immune CMOS technology to provide a ruggedized monolithic construction with a level-shifted high-side channel. The internal bootstrap diode charges the VBS floating supply capacitor on every low-side cycle. Logic inputs are TTL/CMOS compatible and include a shutdown feature on the LIN pin, while matched internal delay paths ensure the dead-time inserted by the controller is preserved between the high-side and low-side outputs to prevent shoot-through currents. Typical applications include DC-DC converter half-bridge stages, BLDC and PMSM motor-control inverter drivers up to 600 V, SMPS primary-side high-voltage half-bridges, electronic ballasts for HID lighting, Class-D audio amplifiers, industrial automation, solar micro-inverters, and small-appliance variable-frequency drives. The combination of features keeps the BOM small while delivering reliable drive for half-bridge, full-bridge, and three-phase inverter stages. When designing with this part, ensure the bootstrap capacitor is sized to provide sufficient gate charge for the high-side MOSFET over the full switching cycle. The VCC decoupling must be a low-ESR ceramic placed as close to the VCC pin as possible, and the floating supply (VBS-VS) requires its own local 0.1 uF + bulk capacitor. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Engineers evaluating a half-bridge gate driver for a 600 V switching stage will find a parametric comparison and application-focused design guidance here.
IR2104SPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2104SPBF is a 600V high-voltage, high-speed half-bridge gate driver IC for MOSFETs and IGBTs in an 8-pin SOIC package, providing 130 mA source / 270 mA sink drive current with 680 ns typical propagation delay. The device uses proprietary HVIC and latch-immune CMOS technology to deliver ruggedized monolithic construction with fully operational capability to +600 V, negative transient voltage tolerance, and dV/dt immunity. The logic input is compatible with standard CMOS or LSTTL output down to 3.3V logic levels, supporting 3.3 V, 5 V, and 15 V input logic. Gate drive supply range is 10 V to 20 V, with built-in undervoltage lockout and internally-set deadtime plus cross-conduction prevention logic. A half-bridge gate driver is a power management IC that drives the high-side and low-side switching transistors in a half-bridge or full-bridge topology, providing level shifting and bootstrap control so the high-side switch can be driven above the switching node. Within the broader semiconductor hierarchy, it belongs to gate drivers -> power management IC -> driver/switching IC family, sitting between a logic-level PWM controller and the discrete power MOSFETs or IGBTs. Key features include matched propagation delay for both channels, floating channel designed for bootstrap operation, and tolerance to negative transient voltage on the VS pin. The output drivers deliver a high pulse current buffer stage designed for minimum driver cross-conduction, and the channel is designed to operate as a high-side or low-side driver by adjusting the ground reference. The 8-lead SOIC package provides compact PCB footprint with sufficient thermal performance for switching frequencies up to several hundred kHz. Typical applications include DC-DC converters, three-phase motor drives, half-bridge and full-bridge inverters, lighting ballasts, and Class-D audio amplifiers. The 600V rating supports 400V AC rectified bus operation with substantial margin. When designing with this part, place a local bootstrap diode and 0.1 uF to 1 uF ceramic capacitor close to the VB and VS pins to minimize parasitic inductance, which directly impacts high-side drive performance. This page synthesizes distributor pricing, drop-in SOIC-8 alternatives, and practical bootstrap/PCB design notes not consolidated in the manufacturer datasheet.
IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2104STRPBF is a 600 V half-bridge gate driver IC delivering typical 0.21 A source and 0.36 A sink drive currents in an 8-pin SOIC package, designed to drive IGBTs and MOSFETs in high-voltage half-bridge and full-bridge topologies. It supports a gate drive supply range of 10 V to 20 V with a maximum supply of 20 V, offers 100 ns typical rise time and 50 ns typical fall time, and integrates logic-level inputs that are 3.3 V, 5 V, and 15 V compatible. The device includes a shutdown input pin, undervoltage lockout for both VCC and VBS rails, and cross-conduction prevention logic with matched propagation delays for the high-side and low-side channels. A half-bridge gate driver IC is a specialized power-management semiconductor that translates low-voltage PWM logic signals from a microcontroller or DSP into the high-current, floating high-side and ground-referenced low-side gate signals required to switch the two transistors of a half bridge. Half-bridge drivers sit within the broader power management IC hierarchy (gate driver > driver IC > power management IC > semiconductor), and are essential building blocks in switch-mode power supplies, motor drives, and Class D amplifiers where a high-side switch must be driven from a floating supply referenced to the switching node. Key features of the IR2104STRPBF include 600 V absolute maximum offset voltage on the high-side channel, tolerance to negative transient voltage on the VS pin, dV/dt immunity, and a proprietary HVIC plus latch-immune CMOS process that enables ruggedized monolithic construction. The floating channel is designed for bootstrap operation, so the high-side driver is supplied by an external bootstrap diode and capacitor. Logic inputs are Schmitt-triggered to improve noise margin in electrically noisy power stages, and the matched propagation delay between channels simplifies dead-time control at the controller. Architecturally the IR2104 uses a level-shifting stage to translate the high-side gate signal across the high-voltage domain, an output driver stage with independent source and sink transistors sized for asymmetric current capability, and dedicated UVLO comparators on VCC and VBS. The 0.21 A / 0.36 A source/sink rating is sufficient to drive small to medium IGBTs and MOSFETs in the 600 V class with switching frequencies from a few kHz up to several hundred kHz, depending on gate charge. Typical applications include BLDC and PMSM motor drives in industrial automation, three-phase inverter stages for uninterruptible power supplies, solar micro-inverters, induction-heating cooktops, Class D audio amplifiers, and high-voltage DC-DC converters. The integrated shutdown pin makes it well suited to fault-interlocked stages where a controller must rapidly disable both gate outputs on overcurrent or desaturation events. A primary design consideration when using the IR2104STRPBF is proper bootstrap capacitor sizing to keep VBS above the UVLO threshold during the high-side on-time, and a low-impedance ground return on the low-side emitter pin to avoid ground bounce that would otherwise disturb the UVLO and input comparators. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR21064STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21064STRPBF is a 600V high-side and low-side gate driver IC in a 14-lead SOIC package, designed to drive IGBTs and MOSFETs in half-bridge power topologies. The device integrates one high-side driver and one low-side driver on a single monolithic die, with typical 0.2 A source and 0.35 A sink current capability. The "STRPBF" suffix indicates Tape & Reel packaging and lead-free (Pb-free) construction, and the package carries an operating temperature range suitable for industrial environments. A gate driver IC is a power management semiconductor that sits between a low-power control signal (typically from a microcontroller or PWM controller) and a power switch (IGBT, MOSFET, or GaN device). Its job is to level-shift the control logic to the voltage domain required by the gate of the high-side switch, source and sink substantial peak current to charge and discharge the gate quickly, and provide isolation between the control domain and the high-voltage switching node. Half-bridge drivers specifically handle the high-side and low-side switch pair that form one phase leg of an inverter, motor drive, or synchronous rectifier. Key features of the IR21064STRPBF include a 600 V maximum offset voltage on the high-side channel, allowing operation from 400 V rectified bus rails with margin, and an integrated bootstrap diode and bootstrap driver that simplifies the floating supply design for the high-side switch. The driver is non-inverting, with logic inputs that accept standard 3.3 V or 5 V CMOS levels, and includes a dedicated VSS pin for logic ground return that isolates logic-side noise from the power-side ground. The SOIC-14 footprint provides a compact, surface-mountable form factor with adequate thermal dissipation for the driver's quiescent losses. The IR21064STRPBF is built on Infineon's high-voltage junction-isolation process, with a latch-up immune CMOS input stage and a proprietary level-shifter that handles the high dV/dt common-mode transients common on switching nodes. The 0.2 A source / 0.35 A sink asymmetry is intentional: MOSFET and IGBT gates typically require more current to discharge (turn-off) than to charge (turn-on) because of the Miller plateau region, so a stronger sink driver speeds turn-off and reduces switching losses. Propagation delay is matched between the high-side and low-side channels to minimize dead-time skew in complementary switching applications. Typical applications include motor drives for industrial fans, pumps, and small appliances, switch-mode power supplies (SMPS) for server and telecom rectifiers, solar inverters, and Class D audio amplifiers. It is also widely used in uninterruptible power supplies (UPS), welding equipment, and induction heating converters where a half-bridge or full-bridge topology is the natural choice. When designing with the IR21064STRPBF, observe the bootstrap capacitor refresh requirement: the bootstrap capacitor must be sized to hold the high-side supply above the undervoltage lockout threshold during the longest low-side-on interval. Place the bootstrap capacitor as close as possible to the VB and VS pins to minimize parasitic inductance that can cause ringing and false triggering of the high-side undervoltage lockout. This page synthesizes distributor pricing, verified drop-in alternatives, and practical PCB layout notes not consolidated in the Infineon datasheet alone.
IR21084STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21084STRPBF is a 600V half-bridge gate driver IC in a 14-pin SOIC package, designed to drive power MOSFETs and IGBTs in switching power topologies. It delivers 200mA peak source / 350mA peak sink gate drive current and operates from a gate drive supply range of 10V to 20V. The IC is fully operational to +600V with negative transient voltage tolerance and dV/dt immunity. A gate driver IC is a high-voltage level shifter and buffer that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the gate of a power MOSFET or IGBT. Within the broader hierarchy, a half-bridge gate driver sits between low-voltage PWM controllers and high-power discrete switches in the power management signal chain: gate driver -> level shifter -> power switch -> power stage -> power conversion system. Floating high-side channels allow bootstrap operation, eliminating the need for an isolated supply for the high-side switch. Key features include a floating channel designed for bootstrap operation, fully operational +600V rating, tolerance to negative transient voltages, dV/dt immunity, undervoltage lockout (UVLO) for both high-side and low-side channels, and 3.3V, 5V, and 15V logic input compatibility. The 14-lead SOIC package offers a compact footprint with a standard 3.90mm body width for surface-mount assembly. The IR21084STRPBF uses a high-voltage level-shifting architecture with proprietary latch-immune CMOS logic to reject the high dV/dt transients present on the switching node of a half-bridge. The high-side channel is implemented with a floating well structure rated to 600V, and the low-side channel provides a non-inverting input path directly from VCC. The input stage accepts logic-level signals, eliminating the need for a level translator in 3.3V microcontroller designs. Typical applications include motor drive inverters, switch-mode power supplies (SMPS), half-bridge and full-bridge converters, lighting ballasts, and industrial driver boards. Its 600V rating suits universal-input AC/DC converters and 400V/480V industrial bus systems. When designing with the IR21084STRPBF, ensure the bootstrap capacitor and diode are correctly sized for the switching frequency and high-side on-time. Place bypass capacitors as close as possible to VCC and VB pins to suppress supply transients. The deadtime (DT) pin setting determines the interlock delay between high-side and low-side switches to prevent shoot-through. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and comparison tables for engineers selecting between the IR21084 family and competing gate drivers.
IR2109SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2109SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver IC featuring typical 0.2A source and 0.35A sink output currents, housed in an 8-lead SOIC package. Operating with logic-compatible inputs and providing 600V tolerance on the high-side driver, it is engineered to drive N-channel power MOSFETs or IGBTs in half-bridge, full-bridge, and three-phase configurations. The device operates over a -40C to +150C junction temperature range and a 10V to 20V supply range, with switching times of approximately 150ns turn-on/off propagation delay. A half-bridge gate driver IC is a specialized power management semiconductor that translates low-power PWM logic signals from a microcontroller or DSP into the high-current gate-drive signals required to switch the high-side and low-side MOSFETs of a switching power stage. It sits hierarchically within the power management IC family, between gate driver ICs and the larger category of MOSFET/IGBT drivers, enabling reliable level shifting and bootstrap-based high-side drive. Key features include a built-in bootstrap diode, dedicated low-side and high-side driver outputs with matched propagation delays, undervoltage lockout (UVLO) protection on VCC, and high noise immunity that prevents false triggering in industrial environments. The integrated dead-time control simplifies firmware and reduces external component count, making the IR2109SPBF well suited for compact motor-drive and SMPS designs. Architecturally, the IR2109SPBF combines a level-shifter, latch, gate driver, and bootstrap diode in a single die, eliminating the need for an external bootstrap diode in most applications. The proprietary HVIC and latch-immune CMOS technologies allow the high-side channel to operate up to 600V while providing stable gate drive down to ground-referenced logic. Typical applications include BLDC motor drives in fans, pumps, and e-bikes; half-bridge and full-bridge converters in switch-mode power supplies; class D audio amplifiers; induction-heating inverters; and uninterruptible power supplies (UPS) where robust, high-side floating drive is required. When designing with the IR2109SPBF, place the bootstrap capacitor (typically 0.1uF to 1uF ceramic) as close as possible to pins Vb and Vs to minimize voltage ringing, and ensure VCC decoupling with at least a 0.1uF local bypass capacitor to suppress supply transients. This page synthesizes distributor pricing, drop-in alternatives from the IR2109 family and competitive cross-references, and practical design notes not found in the manufacturer datasheet.
IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2109STRPBF is a 600V half-bridge gate driver IC in the EiceDRIVER™ family, delivering 0.2A source and 0.35A sink drive currents to switch power MOSFETs and IGBTs in a compact 8-pin SOIC surface-mount package. Designed for high-voltage half-bridge and synchronous-buck topologies, the IR2109STRPBF features an integrated bootstrap diode, under-voltage lockout (UVLO) for both the high-side and low-side sections, and a typical propagation delay of 750ns with 540ns ton/toff matching for clean PWM edge timing. A half-bridge gate driver is a specialized power-management IC that generates the high-side and low-side gate-drive signals required by a half-bridge switching stage. Positioned between a low-voltage PWM controller (such as a microcontroller or dedicated PWM IC) and the high-voltage switching transistors, the half-bridge driver level-shifts the low-side control logic to the floating high-side supply rail (referenced to the switching node VS) and provides the high peak currents needed to quickly charge and discharge the power-device gate capacitances. In the broader taxonomy, the IR2109STRPBF belongs to: gate driver IC -> power management IC -> semiconductor -> analog/mixed-signal IC. Half-bridge drivers are essential building blocks in switch-mode power supplies (SMPS), motor drives, class-D audio amplifiers, HID ballasts, and DC-DC converters. Key specifications include a 600V offset voltage on the high-side section (allowing operation directly from rectified 110/220VAC or 400VDC bus rails), a wide VCC operating range of 10V to 20V, ±200mA peak source / ±350mA peak sink output current, 750ns typical propagation delay, 540ns matched ton/toff, built-in deadtime control, dV/dt immunity, and tolerance to negative VS transients. The integrated bootstrap diode eliminates the need for an external discrete bootstrap component, reducing BOM count and PCB footprint. Architecturally, the IR2109STRPBF uses Infineon's high-voltage level-shifter and latch structure to transmit PWM signals across the high-side isolation barrier, with a floating supply (VB-VS) generated by the bootstrap capacitor refreshed through the internal diode on each low-side turn-on cycle. The matched source/sink drive strength (0.35A sink vs 0.2A source) is intentionally asymmetric to optimize for typical MOSFET turn-on (slower, source current) and turn-off (faster, sink current) behavior. Typical applications include half-bridge and full-bridge motor drivers, synchronous-buck and synchronous-boost DC-DC converters, Class-D audio amplifiers, electronic ballasts for HID and fluorescent lighting, solar micro-inverters, and switched-mode power supplies (SMPS). When designing, the bootstrap capacitor value must be sized for the worst-case PWM duty cycle and switching frequency to prevent high-side UVLO triggering - a common pitfall when driving heavy gate-charge loads at high frequency.
IR2110SPBF - 500V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2110SPBF is a 500 V half-bridge gate driver IC with non-inverting logic inputs in a 16-pin SOIC (SO-16) package. It integrates an independent high-side and low-side referenced output channel pair, with a typical source/sink drive capability of 2.0 A/2.0 A. According to the Infineon/IR datasheet, the high-side channel uses a proprietary HVIC level-shift architecture with a built-in bootstrap diode, while the low-side channel uses a ground-referenced CMOS push-pull output. A half-bridge gate driver IC is a specialized power-management semiconductor that translates low-voltage logic commands (from a microcontroller or DSP) into the high-current, floating high-side gate-drive pulses required to switch the upper MOSFET or IGBT in a half-bridge, three-phase, or full-bridge power stage. The IR2110 belongs to the gate driver IC -> power management IC -> semiconductor hierarchy, and represents one of the most widely adopted half-bridge driver platforms in the industry since its introduction by International Rectifier (now part of Infineon). Key electrical features include a gate-drive supply range of 10 V to 20 V (logic-only operation tolerates 3.3 V), a maximum Voffset of 500 V on the high side, typical propagation delay of 94 ns (50 ns typical ton/toff match), 2 A peak output current, and built-in deadtime/undervoltage lockout for both supply rails. The logic inputs are compatible with standard CMOS or LSTTL outputs down to 3.3 V, eliminating the need for level-shifting interface circuitry. Latch-immune CMOS construction provides ruggedness against dv/dt-induced parasitic turn-on, a common failure mode in noisy bridge environments. The high-voltage level-shift stage uses proprietary HVIC technology monolithically integrated with the low-side circuitry. The bootstrap diode, integrated between Vcc and VCC pins, allows a single supply voltage to drive both the low-side switch directly and the high-side switch through an external bootstrap capacitor. Undervoltage lockout (UVLO) on both Vcc and VCC prevents the gate driver from operating when the supply rails are insufficient to fully enhance the power MOSFET/IGBT, avoiding partial-conduction losses. Typical applications include three-phase motor drives (BLDC/PMSM), half-bridge and full-bridge DC-DC converters, HVAC compressor inverters, uninterruptible power supplies (UPS), Class-D audio amplifiers, and switched-mode power supplies. The wide Voffset rating also suits PFC boost stages and solar microinverters operating from rectified 230 VAC/400 V rails. When designing with the IR2110, place the bootstrap capacitor (typically 0.1-1 µF ceramic) as close as possible to the VCC and VB pins, and confirm that Vb is refreshed on every low-side cycle. Without refresh, the high-side gate cannot stay above UVLO during long 100% duty cycles. The 16-SOIC exposed-pad variant exists for higher thermal dissipation but the IR2110SPBF is the standard SOIC-16 (DW) version. This page synthesizes distributor pricing, drop-in equivalents (IR2110STRPBF, IR2110PBF, IR2113SPBF, IR2110-2PBF), practical bootstrap and UVLO design notes, and BOM-optimization guidance that is not assembled in any single manufacturer document.
IR2110STRPBF - 500V Half-Bridge Gate Driver 2.5A SOIC-16 | Infineon
The Infineon IR2110STRPBF is a 500 V high-voltage, high-speed half-bridge gate driver IC for power MOSFETs and IGBTs, delivering 2.5 A peak source/sink output current in a 16-pin SOIC (SOIC W) tape-and-reel package. It integrates independent high-side and low-side referenced output channels with proprietary HVIC and latch-immune CMOS technologies that enable ruggedized monolithic construction. A gate driver IC (also called a MOSFET driver or IGBT driver) is a power-management semiconductor that sits between a low-power control signal (from a microcontroller, DSP, or logic gate) and the gate of a high-power switching transistor. It provides level shifting, voltage translation, and high peak-current amplification so the small logic signal can rapidly charge and discharge the much larger gate capacitance of the MOSFET or IGBT, thereby minimizing switching losses. Within the broader taxonomy, gate drivers fall under power management ICs, which themselves belong to the broader category of power semiconductors and analog mixed-signal ICs. Key specifications include 500 V absolute maximum offset voltage on the high-side channel, logic inputs compatible with standard CMOS or LSTTL outputs down to 3.3 V, an undervoltage lockout (UVLO) for both supply rails, and a floating channel designed for bootstrap operation. The output stage provides a high pulse-current buffer to drive the largest power MOSFETs and IGBTs. Internal deadtime and matched propagation delays simplify half-bridge timing. The IR2110STRPBF uses proprietary HVIC and latch-immune CMOS processes with monolithic construction, achieving integrated level shifting up to 500 V without external optocouplers or gate-drive transformers. The bootstrap supply technique allows the high-side channel to operate with only a single supply voltage, reducing BOM count compared to isolated-gate-driver approaches. Typical applications include motor control (BLDC, AC induction, and stepper motor drives), switch-mode power supplies (SMPS), half-bridge and full-bridge DC-DC converters, lighting ballasts, induction heating, D-class audio amplifiers, and solar inverters. The wide voltage range and 2.5 A drive strength suit industrial automation, white goods, and renewable-energy power stages. When designing with this driver, select a bootstrap diode with fast recovery and adequate voltage rating, and size the bootstrap capacitor to supply the gate charge of the high-side FET plus margin for refresh cycles. Place the VCC bypass capacitor as close to pins 9 and 16 as possible to suppress switching noise that could otherwise corrupt the input logic. This page synthesizes distributor pricing, drop-in alternatives, pinout, and practical design notes that complement (not duplicate) the manufacturer datasheet for engineers evaluating or sourcing the IR2110STRPBF.
IR2114SSPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2114SSPBF is a 600 V half-bridge gate driver IC in a 24-pin SSOP package, delivering 2 A source and 3 A sink gate-drive capability for single half-bridge power switching applications. It operates from a 10 V to 20 V gate-drive supply (VCC) and supports an absolute maximum logic supply (VDD/VBS) of 25 V, with an input logic threshold that accepts standard 3.3 V and 5 V CMOS/LSTTL signals. The integrated bootstrap diode and over-current protection comparator make it well suited to driving IGBT and power MOSFET half-bridges in motor drives, switched-mode power supplies, and induction-heating inverters. A half-bridge gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or analog controller into the high-current drive required to switch the high-side and low-side FETs of a half-bridge power stage. It sits in the broader hierarchy of gate drivers -> power management ICs -> semiconductors, enabling efficient high-frequency switching of the power train while providing level shifting, bootstrap supply generation, and short-circuit protection for the power switches it controls. Key features of the IR2114SSPBF include integrated over-current shutdown with a programmable fault-clear time, under-voltage lockout for both the floating (VBS) and low-side (VCC) supplies, dedicated shutdown input, matched propagation delay between the high-side and low-side channels, and a 2 A source / 3 A sink gate-drive current rating. The on-chip bootstrap diode eliminates the need for an external bootstrap rectifier in many low-to-medium-power designs, simplifying PCB layout and reducing BOM cost. The IR2114SSPBF uses a level-shifted high-side channel that can swing up to 600 V referenced to the switch-node (VS), allowing direct drive of the high-side IGBT or MOSFET in a half-bridge. The shutdown logic and FAULT output combine to give the host controller a deterministic response to desaturation or over-current events, while the 50 ns typical propagation delay supports switching frequencies well above 100 kHz in hard-switched topologies. Typical applications for the IR2114SSPBF include three-phase variable-frequency drives (VFDs), single-phase PFC front ends, welding inverters, uninterruptible power supplies (UPS), solar micro-inverters, and general-purpose half-bridge or full-bridge converters where the bus voltage stays below 600 V. The same part is widely used as a building block in motor-control kits and reference designs from Infineon's iMotion product line. When designing with the IR2114SSPBF, the bootstrap capacitor must be sized to supply the gate-charge requirement of the high-side switch plus quiescent current over the worst-case on-time, and the VCC/VBS bypass network must use low-ESR ceramic capacitors placed as close to the IC as possible. Designers should also observe the maximum VS transient rating (self-clamped to VBS plus a diode drop) and provide adequate PCB creepage between the high-side floating supply and the low-voltage logic pins on the 24-SSOP footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with each spec traced to a verified source.
IR2114SSTRPBF - 600V Half-Bridge Gate Driver IC, 2A/3A | Infineon
The Infineon IR2114SSTRPBF is a 600 V half-bridge gate driver IC with integrated DESAT (desaturation detection) protection and soft over-current shutdown, delivered in a 24-SSOP (5.30 mm body width) surface-mount package. The device features typical 2 A source and 3 A sink gate-drive currents with a floating channel rated up to 600 V (1200 V version available in the IR2214 family), and operates from a VCC supply of 11.5 V to 20 V. It is designed to drive the high-side and low-side IGBTs or power MOSFETs in a single half-bridge switching stage used across motor control, power-supply, and renewable-energy inverters. A gate driver (also called a MOSFET driver or IGBT driver) is a power-management IC that sits between a low-power microcontroller or PWM controller and the high-current gate of a power switch. Because a microcontroller cannot source or sink enough current to charge the gate capacitance of a high-current MOSFET quickly, the driver provides level shifting, isolation between control logic and the floating high-side rail, and high peak current for fast switching transitions. Within the broader semiconductor taxonomy, an IGBT/MOSFET gate driver is a sub-class of PMIC (power-management IC) and is positioned hierarchically below half-bridge and full-bridge driver families. Key functional features of the IR2114SSTRPBF include integrated desaturation detection for short-circuit protection, a soft over-current shutdown mechanism that avoids dv/dt-induced false trips, a synchronization signal that coordinates shutdown across multiple phases, a two-stage turn-on output stage for di/dt control, separate pull-up and pull-down output drive pins, and a 3.3 V-compatible CMOS FAULT/SD pin for system-controller interface. The combination of these features reduces the external BOM count typically required for a protected half-bridge stage. Architecturally, the device uses a level-shifted bootstrap supply on the high side and a dedicated VCC on the low side. The FAULT/SD pin is bidirectional and CMOS-compatible, allowing the system controller to either force a shutdown or read back the fault status from the device. Dedicated low-side emitter and power-ground pins enable low-side current sensing with a shunt resistor, while a control-ground pin keeps analog/digital ground return paths separated for noise immunity. Typical applications include three-phase motor drives (PMSM, BLDC, induction), solar inverters, UPS systems, welding power stages, and industrial SMPS half-bridge or full-bridge converters. The IR2114SSTRPBF's built-in DESAT protection makes it especially well suited to IGBT-based high-voltage inverters where short-circuit events must be cleared within microseconds to prevent thermal runaway. When designing with the IR2114SSTRPBF, choose the bootstrap capacitor value based on the switching frequency and high-side quiescent current per the datasheet's bootstrap-supply section. Use Kelvin connections to the source/emitter pins to avoid ground-shift issues in high-current loops, and place the DESAT blanking capacitor and the DESAT diode close to the IC to ensure correct short-circuit detection timing. This page synthesizes distributor pricing, drop-in compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering decision support for sourcing, replacement, and PCB-reuse scenarios.