IR2101PBF - 600V Half-Bridge Gate Driver IC | Infineon
N.º de pieza: IR2101PBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.78 | $1,78 |
| 10 | $1.49 | $14,90 |
| 100 | $1.12 | $112,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.78 | $780,00 |
IR2101PBF Descripción general
A gate driver IC is a specialized power management device that translates low-power PWM logic signals from a controller into the high-current gate drive required to switch a power transistor quickly and efficiently. Gate drivers sit between the control logic (MCU, DSP, analog controller) and the power stage (MOSFET, IGBT, GaN HEMT) in the system hierarchy: gate driver -> power management IC -> semiconductor. The IR2101PBF belongs to the half-bridge (high-side + low-side) subcategory, which is essential for synchronous buck converters, motor drives, class-D amplifiers, and any topology that switches a half-bridge node at high frequency.
Key features of the IR2101PBF include independent high and low side referenced output channels, an undervoltage lockout that protects the power stage from insufficient gate drive, and a proprietary HVIC and latch-immune CMOS process that enables rugged monolithic construction. Typical propagation delay is around 160 ns, providing adequate timing margin for switching frequencies up to several hundred kilohertz. The floating channel design supports bootstrap operation for the high-side supply, eliminating the need for an isolated DC/DC converter.
Typical applications include SMPS half-bridge converters, three-phase inverter low-side gate drive stages (paired with a high-side-only driver), HID lamp ballasts, motor control pre-drivers, and class-D audio amplifiers. The wide VCC range and standard CMOS/LSTTL logic input make it a drop-in choice for digital controllers using 3.3 V, 5 V, or 15 V GPIO.
When designing with this part, ensure the bootstrap diode and capacitor values are sized for the switching frequency and high-side quiescent current. Verify that VBS does not collapse below the UVLO threshold during the high-side on-time, otherwise the high-side FET may briefly operate in linear region causing shoot-through risk.
Alternativas directas para IR2101PBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IR2101PBF (mismo factor de forma y huella) — difiere en Package, Configuration, Logic Input Compatibility, RoHS Status, Undervoltage Lockout (UVLO).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IR2102PBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IR2101SPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IR2101STRPBF
✅ Sustitución directa✓ En stock
$0.68 / unidad
Ver hoja de datos →IR2110SPBF
✅ Sustitución directa✓ En stock
$1.98 / unidad
Ver hoja de datos →IR2304SPBF
✅ Sustitución directa✓ En stock
$0.48 / unidad
Ver hoja de datos →IR2101PBF Valores máximos y características eléctricas
| Configuration | Half-Bridge (High and Low Side) |
| Input Type | Non-Inverting |
| Number of Drivers | 2 (High-Side + Low-Side) |
| Número de salidas | 2 |
| Supply Voltage (VCC/VBS) | 10 V to 20 V |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Peak Source Current | 0.21 A (210 mA) |
| Peak Sink Current | 0.36 A |
| Offset (High-Side) Voltage | Up to +600 V |
| Propagation Delay | 160 ns |
| Undervoltage Lockout | Yes |
| dV/dt Immunity | Yes (negative transient tolerant) |
| Temperatura de funcionamiento | -40C to +125C |
| Encapsulado | 8-PDIP (0.300 inch, 7.62 mm) |
| Tipo de montaje | Through-Hole |
| Packaging | Tube |
| Estado RoHS | Compliant (Pb-free PBF suffix) |
Configuración de pines de IR2101PBF
| Pin 1 | VCC — Logic and low-side gate drive supply (10 V to 20 V) |
| Pin 2 | IN — Logic input for HIN/LIN (3.3 V / 5 V / 15 V CMOS-compatible) |
| Pin 3 | SD — Shutdown input (active low; tie to VCC for normal operation) |
| Pin 4 | GND — Logic and low-side ground reference |
| Pin 5 | LO — Low-side gate drive output to low-side MOSFET |
| Pin 6 | VS — High-side floating supply return / half-bridge node |
| Pin 7 | HO — High-side gate drive output to high-side MOSFET |
| Pin 8 | VB — High-side floating bootstrap supply (diode + capacitor from VCC) |
Aplicaciones típicas
IR2101PBF es adecuado para 7 aplicacións: SMPS Half-Bridge Converter, BLDC / PMSM Motor Drive Pre-Driver, Class-D Audio Amplifier Output Stage, HID Lamp Ballast Driver, Solar Inverter / Photovoltaic Converter, Induction Heating Cooktop Inverter, Electronic Ballast for Fluorescent / LED Driver.
SMPS Half-Bridge Converter
The IR2101PBF is a classic driver choice for hard-switched half-bridge SMPS topologies where two power MOSFETs alternately switch a transformer primary. Its 600 V high-side offset rating covers 400 V bus systems, while the 0.21 A source / 0.36 A sink peak currents easily drive MOSFETs in the tens-of-amperes class. Bootstrap operation eliminates the need for an isolated DC/DC converter for the high-side supply, reducing BOM cost. Compared to a low-side-only driver, the half-bridge configuration halves the primary current ripple, reducing transformer and output filter size.
Recomendado
BLDC / PMSM Motor Drive Pre-Driver
Three IR2101PBF devices can drive a complete 3-phase inverter for brushless DC or permanent magnet synchronous motor control. Each chip independently drives one phase leg with the required dead-time control generated externally by the MCU. The 3.3 V logic input is compatible with STM32, PIC, and TI C2000 controllers used in motor drive. The through-hole PDIP package simplifies hand prototyping and field repair for industrial motor control modules up to 1 kW.
Recomendado
Class-D Audio Amplifier Output Stage
The IR2101PBF is widely used as the output-stage driver in half-bridge class-D audio amplifiers where two MOSFETs form a switching pair that recreates the PWM audio waveform across the LC output filter. Its 160 ns propagation delay preserves audio fidelity up to 50 kHz switching frequency, and the low propagation mismatch between high-side and low-side channels minimizes dead-time distortion. For high-power subwoofer amplifiers the 0.36 A sink current provides fast turn-off, reducing switching losses at high audio levels.
Recomendado
HID Lamp Ballast Driver
Automotive and industrial HID (high-intensity discharge) lamp ballasts use the IR2101PBF to drive the half-bridge inverter that produces the high-frequency AC current required to ignite and sustain the lamp arc. The 600 V rating covers the inductive flyback voltage of the ballast inductor, while dV/dt immunity ensures reliable operation despite the harsh switching transients. The 8-PDIP package withstands the elevated under-hood temperatures of automotive lighting modules.
Recomendado
Solar Inverter / Photovoltaic Converter
In solar micro-inverter and string-inverter designs the IR2101PBF drives the primary-side MOSFETs of a push-pull or half-bridge topology fed from the PV panel's MPPT-controlled bus. The 600 V rating covers open-circuit PV voltages up to 400 V system rating with margin for transients. The 10-20 V gate drive supply is compatible with standard 15 V auxiliary rails generated from the PV input. The internal UVLO prevents MOSFET operation with insufficient gate drive, protecting against cold-startup brownout conditions.
Recomendado
Induction Heating Cooktop Inverter
Residential induction cooktops use a resonant half-bridge inverter to drive the induction coil at 20-50 kHz, and the IR2101PBF is well-matched to this application. Its 600 V rating handles the resonant tank voltage, and the asymmetric source/sink currents (0.21 A source / 0.36 A sink) suit zero-voltage-switching (ZVS) topologies where turn-off losses dominate. The 8-PDIP package provides mechanical robustness for consumer appliances subject to vibration and thermal cycling.
Recomendado
Electronic Ballast for Fluorescent / LED Driver
The IR2101PBF serves as the self-oscillating or controller-driven half-bridge driver in electronic ballasts for fluorescent lamps and in resonant LED drivers. The bootstrap supply allows direct drive of the high-side switch without an auxiliary isolated supply. Logic input compatibility with 3.3 V MCUs enables digital dimming and power-factor correction in modern LED luminaires. The 600 V offset rating covers universal-input rectified mains up to 380 V DC.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IR2101PBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IR2102PBF | IR2101SPBF | IR2101STRPBF | IR2110SPBF | IR2304SPBF |
|---|---|---|---|---|---|---|
| Package | 8-PDIP (through-hole) | 8-PDIP - same | 8-SOIC - same pin function, different footprint | 8-SOIC - same pin function, different footprint | 16-SOIC - different footprint | 8-SOIC - same pin function, different footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Configuration | Half-Bridge (High+Low Side) | Half-Bridge (inverting) | Half-Bridge (non-inverting) | Half-Bridge (non-inverting) | Half-Bridge (non-inverting) | Half-Bridge (with dead-time) |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 500 V | 600 V |
| Peak Source Current | 0.21 A | 0.21 A | 0.21 A | 0.21 A | 2.0 A | 0.3 A |
| Peak Sink Current | 0.36 A | 0.36 A | 0.36 A | 0.36 A | 2.0 A | 0.6 A |
| Propagation Delay | 160 ns | 160 ns | 160 ns | 160 ns | 120 ns | 200 ns |
| Logic Input Voltage | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V |
| Unit Price (qty 100) | $1.12 | $1.10 (approx) | $1.05 (approx) | $1.20 (approx) | $2.50 (approx) | $0.90 (approx) |
Diferenciadores clave
- Through-hole PDIP packaging simplifies hand prototyping and field repair (frente a IR2101SPBF)
- Non-inverting logic input matches modern MCU PWM outputs directly (frente a IR2102PBF)
- Industry-standard half-bridge pinout with broad second-source compatibility (frente a IR2304SPBF)
Notas de diseño
Bootstrap capacitor sizing is critical for IR2101PBF high-side operation. The CBST capacitor must supply the high-side quiescent current (IQBS) plus the gate charge (QG) of the high-side MOSFET during the on-time. Rule of thumb: CBST >= 10 * QG / (VCC - Vf - VBS_UVLO). At 100 kHz switching and 50 nC QG with a 1 uF ceramic CBST, ripple is approximately 5 V which is acceptable above the 8 V UVLO threshold. Use a low-ESR ceramic (X7R) and a fast-recovery bootstrap diode such as UF4007 or an SS24 Schottky.
Route the high-current gate drive loop (HO -> gate -> source -> VS -> GND of driver) as a tight, low-inductance loop to minimize ringing and voltage overshoot on the gate. Place the bootstrap diode and capacitor within 5 mm of pins 6 (VS) and 8 (VB). Add a 100 nF ceramic decoupling capacitor close to VCC (pin 1) and a 1 uF bulk capacitor at the PCB power entry. Keep the IN (pin 2) trace away from the HO/LO outputs to avoid logic noise coupling.
Do not exceed the absolute maximum VBS of 20 V, including transient overshoot from the bootstrap supply. If VCC is 15 V, add a 5.1 V Zener clamp from VB to VS to prevent over-voltage during start-up or load transients. Never leave the SD pin (pin 3) floating - tie it to VCC through a 10 kohm resistor, or to a microcontroller GPIO if shutdown control is needed. Without proper SD biasing, the device may operate in undefined state and produce spurious gate pulses.
Estimated: at 100 kHz switching, 50 nC total gate charge, and 15 V gate drive, the IR2101PBF internal dissipation is approximately P = VCC * QG * fSW = 15 V * 50 nC * 100 kHz = 75 mW per channel. The 8-PDIP package has theta_JA of approximately 100 C/W, giving a junction temperature rise of 7.5 C above ambient - negligible for most designs. However, in high-frequency (>200 kHz) or high-QG (IGBT) applications, derate the switching frequency or add copper pour to keep junction below 125 C.
Keep the half-bridge node (pin 6 VS) trace short and wide to minimize parasitic inductance - this node swings at high dV/dt and any inductance creates voltage overshoot that can exceed the IR2101PBF's 600 V rating. Use a ground plane under the driver and avoid routing sensitive analog signals (IN, SD) across or parallel to the HO/LO switching traces. For high-voltage designs (>400 V bus), add a TVS diode from VS to GND and a snubber network (RC or RCD) across the half-bridge to clamp transient ringing.
Información de cumplimiento
IR2101PBF Pb-free suffix indicates RoHS-compliant lead-free plating. Not AEC-Q100 qualified - for automotive designs, evaluate the IR2101PBF automotive-grade variants or higher-tier drivers from Infineon's automotive portfolio.
