1ED3124MC12HXUMA1 vs 1ED3142MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED3124MC12HXUMA1 por Infineon y 1ED3142MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3124MC12HXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,45 | $1,32 |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | Inverting, Non-Inverting |
| Number of Drivers | 1 | — |
| Número de salidas | 1 | 2 (separate source/sink) |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | Coreless transformer (galvanic) |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| Tiempo de subida | 15 ns | — |
| Tiempo de bajada | 30 ns | — |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-DSO-8 (DSO-8) | PG-DSO-8 (PG-LDSO-8-1) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Voltage | — | 3000 Vrms |
| Number of Channels | — | 1 |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |