1ED3142MC12HXUMA1 vs 2ED21064S06JXUMA1 Comparación
Comparación detallada lado a lado de 1ED3142MC12HXUMA1 por Infineon y 2ED21064S06JXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ ActivoInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3142MC12HXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Número de salidas | 2 (separate source/sink) | — |
| Configuration | Inverting, Non-Inverting | Half-Bridge (2 outputs, non-inverting) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Encapsulado | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-14 (14-pin SOIC) |
| Tipo de montaje | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Función | — | High-Side and Low-Side Gate Driver |
| Topología | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperatura de funcionamiento | — | -40C to +125C |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Estado RoHS | — | ROHS3 Compliant |
| Negative Gate Drive Robustness | — | -0.7 V |