1ED3142MC12HXUMA1 vs 2ED21064S06JXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED3142MC12HXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 1ED3142MC12HXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Anzahl der Ausgänge | 2 (separate source/sink) | — |
| Configuration | Inverting, Non-Inverting | Half-Bridge (2 outputs, non-inverting) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Gehäuse | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-14 (14-pin SOIC) |
| Montageart | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Funktion | — | High-Side and Low-Side Gate Driver |
| Topologie | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Betriebstemperatur | — | -40C to +125C |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| RoHS-Status | — | ROHS3 Compliant |
| Negative Gate Drive Robustness | — | -0.7 V |