1ED3142MC12HXUMA1 vs 2EP101RXTMA1 Comparación
Comparación detallada lado a lado de 1ED3142MC12HXUMA1 por Infineon y 2EP101RXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 1ED3142MC12HXUMA1 | 2EP101RXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $0,88 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Número de salidas | 2 (separate source/sink) | 1 (full-bridge differential primary) |
| Configuration | Inverting, Non-Inverting | — |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Encapsulado | PG-DSO-8 (PG-LDSO-8-1) | PG-TSSOP-8 |
| Tipo de montaje | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Product Type | — | Full-Bridge Transformer Driver PMIC |
| Topología | — | Full-bridge (H-bridge) with external transformer |
| Supply Voltage Range | — | 5 V to 20 V |
| Maximum Output Power | — | 5 W |
| Switching Frequency Option 1 | — | 50 kHz |
| Switching Frequency Option 2 | — | 65 kHz |
| Duty Cycle Option 1 | — | 12% |
| Duty Cycle Option 2 | — | 17% |
| Rango de temperatura de funcionamiento | — | -40 °C to +125 °C |
| Primary Application | — | Isolated IGBT and SiC MOSFET gate driver supply |
| RoHS Compliance | — | Compliant |
| Delivery Form | — | Tape and Reel (XT suffix) |