1ED3142MU12FXUMA1 vs 2ED21064S06JXUMA1 Comparación
Comparación detallada lado a lado de 1ED3142MU12FXUMA1 por Infineon y 2ED21064S06JXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 ✓ ActivoInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3142MU12FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,94 | $0,85 |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | — |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | 100 ns |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| Encapsulado | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-14 (14-pin SOIC) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| Estado RoHS | Compliant | ROHS3 Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| Función | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topología | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperatura de funcionamiento | — | -40C to +125C |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Negative Gate Drive Robustness | — | -0.7 V |