1ED3323MC12NXUMA1 vs 1EDN8511BXUSA1 Comparación
Comparación detallada lado a lado de 1ED3323MC12NXUMA1 por Infineon y 1EDN8511BXUSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1ED3323MC12NXUMA1 | 1EDN8511BXUSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,25 | $0,54 |
| Función | Single-channel isolated gate driver | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Peak Source Current | 8.5 A | 4 A |
| Peak Sink Current | 9 A | 8 A |
| Number of Channels | 1 | — |
| Primary-Side Supply Voltage (VDD1) | 3.1 V to 5.5 V | — |
| Secondary-Side Supply Voltage (VCC2) | 9 V to 18 V | — |
| Propagation Delay (typ) | 85 ns | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI in kV/us] | — |
| Protection Features | DESAT short-circuit, soft-off, Miller clamp, UVLO | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-DSO-16-40 | PG-SOT23-6-2 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Family | EiceDRIVER F3 Enhanced (1ED332x) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Channel Count | — | 1 |
| Driver Configuration | — | Low-side |
| Input Stage | — | Inverting and non-inverting |
| Propagation Delay Accuracy | — | [DATA_NEEDED: typical propagation delay] |
| UVLO Threshold | — | 8 V |
| Driver Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range upper limit] |
| Temperatura de unión de funcionamiento | — | -40 °C to +150 °C |
| Recuento de pines | — | 6 |
| Logic Input Compatibility | — | TTL / CMOS |
| Target Switch Type | — | Power MOSFET, GaN HEMT |