1EDN7116GXTMA1 vs 1EDN7146GXTMA1 Comparación
Comparación detallada lado a lado de 1EDN7116GXTMA1 por Infineon y 1EDN7146GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDN7116GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,84 | $1,05 |
| Función | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | — |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | 1 |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | TDI (Truly Differential Inductor) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 4.5 V to 20 V |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| Rango de temperatura de funcionamiento | -40 °C to +125 °C | — |
| Encapsulado | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-VSON-10-4 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL3 | 1 |
| Estado RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Driver Type | — | High-side, single-channel |
| Logic Type | — | Non-Inverting |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |
| Temperatura de funcionamiento | — | -40 C to +125 C |