2ED21064S06JXUMA1 vs 1EBN1001AEXUMA1 Comparación
Comparación detallada lado a lado de 2ED21064S06JXUMA1 por Infineon y 1EBN1001AEXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ ActivoInfineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 2ED21064S06JXUMA1 | 1EBN1001AEXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,85 | $4,41 |
| Función | High-Side and Low-Side Gate Driver | — |
| Configuration | Half-Bridge (2 outputs, non-inverting) | High-Side / Low-Side (non-inverting booster) |
| Topología | High-Side, Low-Side with integrated bootstrap diode | — |
| Maximum Offset / Boot Voltage | 650 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typical) | 0.29 A | — |
| Sink Current (typical) | 0.7 A | — |
| Rise Time (typical) | [DATA_NEEDED: rise time] | — |
| Fall Time (typical) | [DATA_NEEDED: fall time] | — |
| Propagation Delay (typical) | 100 ns | — |
| Channel-to-Channel Delay Match | [DATA_NEEDED: channel-to-channel delay match] | — |
| Under-Voltage Lockout | Yes (both channels) | — |
| Bootstrap Diode | Integrated | — |
| Input Logic Compatibility | 3.3 V / 5 V CMOS | — |
| Temperatura de funcionamiento | -40C to +125C | -40 °C to +125 °C (automotive grade) |
| Encapsulado | PG-DSO-14 (14-pin SOIC) | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Estado RoHS | ROHS3 Compliant | Compliant |
| Negative Gate Drive Robustness | -0.7 V | — |
| Product Type | — | Isolated single-channel IGBT/MOSFET gate driver booster |
| Series | — | EiceDRIVER™ Boost (1EBN family) |
| Número de salidas | — | 2 (separate source and sink paths) |
| Peak Output Current | — | ±15 A |
| Number of Drivers | — | 1 |
| Input Signal | — | ASC input, active-clamping disable |
| Active Clamping | — | Yes (very fast reaction time) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Target Switching Stage | — | Motor drives > 10 kW (up to 400 A modules) |