2ED21064S06JXUMA1 vs 1EBN1001AEXUMA1 비교

다음의 상세 나란히 비교: 2ED21064S06JXUMA1 제조: Infineon 및 1EBN1001AEXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2ED21064S06JXUMA1 1EBN1001AEXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.85 $4.41
기능 High-Side and Low-Side Gate Driver —
Configuration Half-Bridge (2 outputs, non-inverting) High-Side / Low-Side (non-inverting booster)
토폴로지 High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated —
Input Logic Compatibility 3.3 V / 5 V CMOS —
동작 온도 -40C to +125C -40 °C to +125 °C (automotive grade)
패키지 PG-DSO-14 (14-pin SOIC) PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 상태 ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Product Type — Isolated single-channel IGBT/MOSFET gate driver booster
Series — EiceDRIVER™ Boost (1EBN family)
출력 수 — 2 (separate source and sink paths)
Peak Output Current — ±15 A
Number of Drivers — 1
Input Signal — ASC input, active-clamping disable
Active Clamping — Yes (very fast reaction time)
Automotive Qualification — AEC-Q100 qualified
Target Switching Stage — Motor drives > 10 kW (up to 400 A modules)

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