2ED2108S06FXUMA1 vs 1EDN7146GXTMA1 Comparación
Comparación detallada lado a lado de 2ED2108S06FXUMA1 por Infineon y 1EDN7146GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2ED2108S06FXUMA1 | 1EDN7146GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,30 | $1,05 |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 1 | 1 |
| Gate Type | N-Channel MOSFET, IGBT | — |
| Número de salidas | 2 (high-side + low-side) | — |
| Logic Input | Non-Inverting | — |
| Input Voltage (VCC) | 10 V to 20 V | — |
| High-Side Bootstrap Voltage Rating | 650 V | — |
| Peak Source Current (typ.) | 0.29 A | — |
| Peak Sink Current (typ.) | 0.7 A | — |
| Integrated Bootstrap Diode | Yes | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay ns] | — |
| Rise / Fall Time (typ.) | [DATA_NEEDED: tr/tf ns] | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Encapsulado | PG-DSO-8-53 (DSO-8) | PG-VSON-10-4 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 1 |
| Estado RoHS | Compliant | Compliant |
| Driver Type | — | High-side, single-channel |
| Logic Type | — | Non-Inverting |
| Input Type | — | TDI (Truly Differential Inductor) |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Supply Voltage (VCC) | — | 4.5 V to 20 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |