2ED21844S06JXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 2ED21844S06JXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
2ED21844S06JXUMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 2ED21844S06JXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,68 | $1,45 |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 2 (high-side + low-side) | 1 |
| Input Type | Non-Inverting | — |
| Blocking Voltage (Voffset) | 650 V | — |
| Output Current (Source/Sink) | 2.5 A typical | — |
| Bootstrap Diode | Integrated | — |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | — |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | — |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | — |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | — |
| Shutdown Pin | Yes | — |
| Negative VS Transient Immunity | -100 V typical | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-DSO-14-49 (DSO-14) | PG-DSO-8 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Número de salidas | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |