2ED21844S06JXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2ED21844S06JXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
2ED21844S06JXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2ED21844S06JXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $1.45 |
| Driver Configuration | Half-Bridge | β |
| Number of Drivers | 2 (high-side + low-side) | 1 |
| Input Type | Non-Inverting | β |
| Blocking Voltage (Voffset) | 650 V | β |
| Output Current (Source/Sink) | 2.5 A typical | β |
| Bootstrap Diode | Integrated | β |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | β |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | β |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | β |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | β |
| Shutdown Pin | Yes | β |
| Negative VS Transient Immunity | -100 V typical | β |
| Operating Temperature Range | -40 C to +125 C | β |
| Package | PG-DSO-14-49 (DSO-14) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | Compliant |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |