2EDL8034G4CXTMA1 vs 2EDL8033G4CXTMA1 Comparación
Comparación detallada lado a lado de 2EDL8034G4CXTMA1 por Infineon y 2EDL8033G4CXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2EDL8034G4CXTMA1 | 2EDL8033G4CXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $2,84 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | High-Side / Low-Side, Non-Inverting |
| Bootstrap Voltage (Max) | 120 V | 120 V |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Número de salidas | 2 | 2 (HS + LS) |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | 10 V to 20 V |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Temperatura de unión de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VDSON-10-2 (10-pin VDSON with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Product Type | — | Half-Bridge Gate Driver IC |
| Source Drive Current | — | 3 A |
| Sink Drive Current | — | 4 A |
| Logic Input Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Isolation Technology | — | Junction-isolated |
| Propagation Delay (Typ) | — | 45 ns |
| Channel-to-Channel Matching | — | <10 ns |
| Integrated Bootstrap Diode | — | Yes |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Marking Code | — | 2ED8033G4C |
| Estado RoHS | — | Compliant |