5M2210ZF256C5N vs 5M2210ZF256C4N Comparación
Comparación detallada lado a lado de 5M2210ZF256C5N por Intel y 5M2210ZF256C4N por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ ActivoComparación de especificaciones
| Parámetro | 5M2210ZF256C5N | 5M2210ZF256C4N |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $11,95 | $7,29 |
| Family | MAX V | MAX V |
| Device Logic Elements | 2,210 | — |
| Macrocells | 1,700 | — |
| User I/Os | 203 | — |
| Maximum Internal Frequency | 201.1 MHz | — |
| Typical Propagation Delay (tPD) | 7 ns | — |
| Supply Voltage VCCINT | 1.71 V to 1.89 V (1.8 V nominal) | — |
| I/O Supply Voltage VCCIO | 1.2 V to 3.3 V | — |
| User Flash Memory | 8 Kbits | 8192 bits |
| Logic Array Blocks | 4 | — |
| Configuration Memory | Non-volatile flash | — |
| Programming Interface | JTAG (IEEE 1149.1) - in-system | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Encapsulado | 256-ball FBGA (FineLine BGA), 1.0 mm pitch | FBGA-256 (FineLine BGA) |
| Temperatura de funcionamiento | 0 C to +85 C (commercial grade) | 0C to 85C (Commercial) |
| Speed Grade | 5 (fastest commercial) | C4 (tPD ~4 ns class) |
| Lead Finish | Lead-free (N suffix) | — |
| Estado RoHS | Compliant | Compliant (Pb-free ball finish) |
| Device | — | 5M2210Z |
| Logic Elements (LEs) | — | 1700 |
| Logic Array Blocks (LABs) | — | 221 |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |