A3PE3000-2FGG896 vs A3PE3000L-FG896M Comparación

Comparación detallada lado a lado de A3PE3000-2FGG896 por Microchip Technology y A3PE3000L-FG896M por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Microchip Technology
A3PE3000-2FGG896 A3PE3000-2FGG896 - 3M-Gate ProASIC3E Flash FPGA | Microchip

A3PE3000-2FGG896 - 3M-Gate ProASIC3E Flash FPGA | Microchip

A3PE3000-2FGG896 ✓ Activo
Microchip Technology
A3PE3000L-FG896M A3PE3000L-FG896M - 3M-Gate Low-Power Flash FPGA | Microchip

A3PE3000L-FG896M - 3M-Gate Low-Power Flash FPGA | Microchip

A3PE3000L-FG896M ✓ Activo

Comparación de especificaciones

Parámetro A3PE3000-2FGG896 A3PE3000L-FG896M
Marca Microchip Technology Microchip Technology
Categoría FPGA & CPLD FPGA & CPLD
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $128,00 $0,00
Family ProASIC3E ProASIC3L (ProASIC3EL)
Number of System Gates 3,000,000 —
Number of I/Os 620 —
Supply Voltage (Core) 1.425 V to 1.575 V (1.5 V nominal) —
Speed Grade -2 [DATA_NEEDED: Speed Grade]
Encapsulado 896-BGA / 896-FBGA (31x31 mm, 1.0 mm ball pitch) 896-ball FBGA (FG896)
Tipo de montaje Surface Mount Surface Mount
Temperatura de funcionamiento 0C to 85C (TJ) —
Configuration Memory On-chip Flash (non-volatile, single chip) On-chip flash (nonvolatile, single-chip)
Technology CMOS flash —
Soft ARM Support Optional (per ProASIC3E datasheet) —
Packaging Tray —
Estado RoHS ROHS3 Compliant (G suffix) [DATA_NEEDED: RoHS Status]
Manufacturer Lead Time 8 weeks —
Product Status Active —
Total System Performance [DATA_NEEDED: system performance] —
Equivalent Gates — 3,000,000
Logic Cells — 75,264
User I/O — 620
Process Technology — 130 nm CMOS flash
Core Voltage — 1.2 V / 1.5 V
Low-Power Technology — Flash*Freeze
JTAG Boundary Scan — IEEE 1149.1
Input Type Option — Schmitt trigger on single-ended inputs
Pull Resistors — Weak pull-up / pull-down
Temperature Grade — M (military screening per suffix)
Rango de temperatura de funcionamiento — [DATA_NEEDED: Operating Temperature Range]
Embedded Block RAM — [DATA_NEEDED: Embedded Block RAM capacity]

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