AD8627ARZ vs AD8622ARZ Comparación
Comparación detallada lado a lado de AD8627ARZ por Analog Devices y AD8622ARZ por Analog Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | AD8627ARZ | AD8622ARZ |
|---|---|---|
| Marca | Analog Devices | Analog Devices |
| Categoría | Amplifier ICs | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,82 | $2,93 |
| Amplifier Type | J-FET | Precision, Rail-to-Rail Output |
| Number of Circuits | 1 | — |
| Tipo de salida | Rail-to-Rail | — |
| Slew Rate | [DATA_NEEDED: Slew Rate] | 0.5 V/µs |
| Gain Bandwidth Product | [DATA_NEEDED: Gain Bandwidth Product] | — |
| Current - Input Bias | [DATA_NEEDED: Current - Input Bias] | — |
| Voltage - Input Offset | [DATA_NEEDED: Voltage - Input Offset] | — |
| Current - Supply | 900 µA (max) | — |
| Current - Output / Channel | [DATA_NEEDED: Current - Output / Channel] | — |
| Voltage - Supply Span (Min) | [DATA_NEEDED: Voltage - Supply Span (Min)] | — |
| Voltage - Supply Span (Max) | [DATA_NEEDED: Voltage - Supply Span (Max)] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature] | — |
| Encapsulado / Carcasa | 8-SOIC | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Number of Channels | — | 2 (dual) |
| Supply Current (per amplifier) | — | 350 µA max |
| Supply Voltage Range (Single) | — | 5 V to 30 V |
| Supply Voltage Range (Dual) | — | ±2.5 V to ±15 V |
| Input Offset Voltage (typical) | — | 10 µV |
| Input Offset Voltage Drift | — | 0.5 µV/°C |
| Input Bias Current | — | < 1 pA (cancelled) |
| Gain-Bandwidth Product | — | 560 kHz |
| Voltage Noise (0.1 Hz to 10 Hz) | — | 0.2 µV p-p |
| Output Swing | — | Rail-to-Rail (within 10 mV of rails) |
| Rango de temperatura de funcionamiento | — | -40°C to +125°C |
| Encapsulado | — | 8-SOIC (0.154", 3.90 mm width) |
| ESD Rating (HBM) | — | 2 kV |