AD8627ARZ vs AD8622ARZ Comparaison
Comparaison détaillée côte à côte de AD8627ARZ par Analog Devices et AD8622ARZ par Analog Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | AD8627ARZ | AD8622ARZ |
|---|---|---|
| Marque | Analog Devices | Analog Devices |
| Catégorie | Amplifier ICs | Amplifier ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,82 | $2,93 |
| Amplifier Type | J-FET | Precision, Rail-to-Rail Output |
| Number of Circuits | 1 | — |
| Type de sortie | Rail-to-Rail | — |
| Slew Rate | [DATA_NEEDED: Slew Rate] | 0.5 V/µs |
| Gain Bandwidth Product | [DATA_NEEDED: Gain Bandwidth Product] | — |
| Current - Input Bias | [DATA_NEEDED: Current - Input Bias] | — |
| Voltage - Input Offset | [DATA_NEEDED: Voltage - Input Offset] | — |
| Current - Supply | 900 µA (max) | — |
| Current - Output / Channel | [DATA_NEEDED: Current - Output / Channel] | — |
| Voltage - Supply Span (Min) | [DATA_NEEDED: Voltage - Supply Span (Min)] | — |
| Voltage - Supply Span (Max) | [DATA_NEEDED: Voltage - Supply Span (Max)] | — |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature] | — |
| Boîtier / Format | 8-SOIC | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Number of Channels | — | 2 (dual) |
| Supply Current (per amplifier) | — | 350 µA max |
| Supply Voltage Range (Single) | — | 5 V to 30 V |
| Supply Voltage Range (Dual) | — | ±2.5 V to ±15 V |
| Input Offset Voltage (typical) | — | 10 µV |
| Input Offset Voltage Drift | — | 0.5 µV/°C |
| Input Bias Current | — | < 1 pA (cancelled) |
| Gain-Bandwidth Product | — | 560 kHz |
| Voltage Noise (0.1 Hz to 10 Hz) | — | 0.2 µV p-p |
| Output Swing | — | Rail-to-Rail (within 10 mV of rails) |
| Plage de température de fonctionnement | — | -40°C to +125°C |
| Boîtier | — | 8-SOIC (0.154", 3.90 mm width) |
| ESD Rating (HBM) | — | 2 kV |