ADC1415S080HN-C18 vs ADC1213S080HN-C18 Comparación
Comparación detallada lado a lado de ADC1415S080HN-C18 por Renesas Electronics y ADC1213S080HN-C18 por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
ADC1415S080HN-C18 - 14-Bit 80MSPS ADC w/ Input Buffer | Renesas
ADC1415S080HN-C18 ✓ ActivoRenesas Electronics
ADC1213S080HN-C18 - 12-Bit 80MSPS Single-Channel ADC | Renesas
ADC1213S080HN-C18 ✓ ActivoComparación de especificaciones
| Parámetro | ADC1415S080HN-C18 | ADC1213S080HN-C18 |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | ADC/DAC | ADC/DAC |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,40 | $9,45 |
| Resolución | 14 bits | 12 bits |
| Number of Channels | 1 | 1 |
| Sampling Rate (Max) | 80 MSPS | — |
| Sampling Rate (Per Second) | 80M | — |
| Architecture | Pipelined | — |
| Input Buffer | Integrated (wideband) | — |
| Input Type | Single-ended / Differential | — |
| Data Interface | Serial, SPI (configuration); CMOS or LVDS DDR (data) | — |
| Configuration Interface | Serial SPI | SPI / serial control |
| Encapsulado | 40-VFQFN Exposed Pad (HVQFN-40) | HVQFN-32 (5x5 mm) with exposed thermal pad |
| Temperatura de funcionamiento | -40°C to +85°C | -40 C to +85 C |
| Temperature Grade | Industrial (suffix -C18) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | 3 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | [DATA_NEEDED: halogen free status] | — |
| Maximum Sample Rate | — | 80 MSPS |
| Output Interface | — | Serial JESD204A (1 lane) |
| Analog Supply Voltage (AVDD) | — | 1.8 V |
| Digital / IO Supply (OVDD) | — | 1.8 V to 3.3 V |
| Analog Input Type | — | Differential, on-chip buffer |
| Analog Input Bandwidth | — | 1 GHz |
| SNR (typical, fIN near Nyquist) | — | 70 dBFS |
| SFDR (typical) | — | 78 dBc |
| Power Dissipation (typical, 80 MSPS) | — | 130 mW |
| Power-Down Mode | — | Yes (SPI-controlled) |