AIMBG120R010M1XTMA1 vs BSF134N10NJ3GXUMA1 Comparación
Comparación detallada lado a lado de AIMBG120R010M1XTMA1 por Infineon y BSF134N10NJ3GXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | AIMBG120R010M1XTMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $41,90 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G1 Automotive SiC Trench MOSFET | — |
| Technology | Silicon Carbide (SiC) Trench MOSFET | Trench-gate OptiMOS planar |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 1200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 205 A | — |
| On-Resistance RDS(on), typ | 8.7 mΩ | — |
| Power Dissipation (PD, Tc) | 882 W | — |
| Encapsulado | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount | MG-WDSON-2 (CanPAK M) |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Automotive Qualification | AEC-Q101 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 7 + Tab | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |