AT25DF081A-SH-B vs AT25DF641A-SH-T Comparación
Comparación detallada lado a lado de AT25DF081A-SH-B por Renesas Electronics y AT25DF641A-SH-T por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
AT25DF641A-SH-T - 64Mbit SPI/Quad SPI NOR Flash, SOIC-8 | Renesas
AT25DF641A-SH-T NrndComparación de especificaciones
| Parámetro | AT25DF081A-SH-B | AT25DF641A-SH-T |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,82 |
| Tipo de memoria | Serial NOR Flash | NOR Flash |
| Memory Density | 8 Mbit (1 Mbyte) | — |
| Memory Organization | 4K x 256 bytes | — |
| Interfaz | SPI (Single/Dual), Mode 0 and Mode 3 | SPI (Single/Dual I/O), Serial Peripheral Interface compatible |
| Frecuencia de reloj máxima | 100 MHz | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V (single supply) |
| Temperatura de funcionamiento | -40C to +85C | -40 C to +85 C (industrial) |
| Encapsulado | 8-SOIC (SOIC-W, 208 mil) | 8-SOIC (SOIC-W 208 mil, "SH") |
| Sector / Block Erase Sizes | 4 KB / 32 KB / 64 KB uniform | — |
| Page Program Size | 1 to 256 bytes | — |
| Endurance | 100,000 erase/program cycles per sector | — |
| Data Retention | >20 years | [DATA_NEEDED: data retention years] |
| Security Registers | Three 256-byte Security Register pages | — |
| SFDP Support | Yes (JEDEC 216 standard) | — |
| Write Protection | Hardware WP pin plus BP0-BP2 status-register bits | — |
| Estado RoHS | Compliant | Compliant (Green) |
| Density | — | 64 Mbit (8 MB) |
| Clock Frequency (max) | — | 100 MHz (Single-I/O) |
| Tipo de montaje | — | Surface Mount |
| Page Size (program) | — | 256 bytes |
| Sector Erase Sizes | — | 4 KB / 32 KB / 64 KB uniform |
| Sector Architecture | — | Uniform 4 KB sectors |
| Deep Power-Down Current | — | [DATA_NEEDED: typical deep power-down current in uA] |
| Active Read Current | — | [DATA_NEEDED: active read current in mA] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Write-Protect Pin | — | Yes (/WP) |
| Hold Pin | — | Yes (/HOLD) |
| JEDEC ID Read | — | Yes |
| Nivel MSL | — | 3 (per JEDEC J-STD-020, typical for SOIC flash) |
| Lead-Free | — | Yes |
| Estado del ciclo de vida | — | Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T |
| Packaging | — | Tape & Reel (suffix -T) |