AT25DF081A-SH-B vs AT25DF641A-SH-T 对比

详细并排对比 AT25DF081A-SH-B 出自 Renesas Electronics 和 AT25DF641A-SH-T 出自 Renesas Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Renesas Electronics
AT25DF081A-SH-B AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas

AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas

AT25DF081A-SH-B ✓ 量产中

规格对比

参数 AT25DF081A-SH-B AT25DF641A-SH-T
品牌 Renesas Electronics Renesas Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 不推荐新设计
库存状态 有库存 有库存
单价(USD) $0.58 $0.82
存储器类型 Serial NOR Flash NOR Flash
Memory Density 8 Mbit (1 Mbyte) —
Memory Organization 4K x 256 bytes —
接口 SPI (Single/Dual), Mode 0 and Mode 3 SPI (Single/Dual I/O), Serial Peripheral Interface compatible
最大时钟频率 100 MHz —
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V (single supply)
工作温度 -40C to +85C -40 C to +85 C (industrial)
封装 8-SOIC (SOIC-W, 208 mil) 8-SOIC (SOIC-W 208 mil, "SH")
Sector / Block Erase Sizes 4 KB / 32 KB / 64 KB uniform —
Page Program Size 1 to 256 bytes —
Endurance 100,000 erase/program cycles per sector —
Data Retention >20 years [DATA_NEEDED: data retention years]
Security Registers Three 256-byte Security Register pages —
SFDP Support Yes (JEDEC 216 standard) —
Write Protection Hardware WP pin plus BP0-BP2 status-register bits —
RoHS 状态 Compliant Compliant (Green)
Density — 64 Mbit (8 MB)
Clock Frequency (max) — 100 MHz (Single-I/O)
安装类型 — Surface Mount
Page Size (program) — 256 bytes
Sector Erase Sizes — 4 KB / 32 KB / 64 KB uniform
Sector Architecture — Uniform 4 KB sectors
Deep Power-Down Current — [DATA_NEEDED: typical deep power-down current in uA]
Active Read Current — [DATA_NEEDED: active read current in mA]
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Write-Protect Pin — Yes (/WP)
Hold Pin — Yes (/HOLD)
JEDEC ID Read — Yes
MSL 等级 — 3 (per JEDEC J-STD-020, typical for SOIC flash)
Lead-Free — Yes
生命周期状态 — Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T
Packaging — Tape & Reel (suffix -T)

数据手册与资源

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