AT25DF641A-SH-B vs AT25DF641A-SH-T Comparación
Comparación detallada lado a lado de AT25DF641A-SH-B por Renesas Electronics y AT25DF641A-SH-T por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
AT25DF641A-SH-B - 64Mbit SPI Flash, 2.7-3.6V, 100MHz SOIC-8 | Renesas
AT25DF641A-SH-B ✓ ActivoRenesas Electronics
AT25DF641A-SH-T - 64Mbit SPI/Quad SPI NOR Flash, SOIC-8 | Renesas
AT25DF641A-SH-T NrndComparación de especificaciones
| Parámetro | AT25DF641A-SH-B | AT25DF641A-SH-T |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $0,82 |
| Tipo de memoria | Non-volatile NOR Flash | NOR Flash |
| Memory Density | 64 Mbit (8 MB) | — |
| Organización de memoria | 8M x 8 bit | — |
| Interfaz | SPI (Serial Peripheral Interface) | SPI (Single/Dual I/O), Serial Peripheral Interface compatible |
| SPI Modes | Mode 0 and Mode 3 | — |
| Maximum SPI Clock | 100 MHz | — |
| Dual-I/O Support | Yes (Dual Output Read) | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (single supply) | 2.7 V to 3.6 V (single supply) |
| Page Size | 256 bytes | — |
| Sector Erase Size | 4 KB | — |
| Block Erase Sizes | 32 KB and 64 KB | — |
| Temperatura de funcionamiento | -40 C to +85 C | -40 C to +85 C (industrial) |
| Encapsulado | 8-SOIC-W (Wide Body, 208 mil) | 8-SOIC (SOIC-W 208 mil, "SH") |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging Form | Tube (-SH-B suffix) | — |
| Lead-Free / RoHS | Yes (Green, Pb-free) | — |
| Write Protection | Hardware WP#, software, and absolute protection | — |
| JEDEC ID | 0x1F (Atmel/Renesas) | — |
| Density | — | 64 Mbit (8 MB) |
| Clock Frequency (max) | — | 100 MHz (Single-I/O) |
| Page Size (program) | — | 256 bytes |
| Sector Erase Sizes | — | 4 KB / 32 KB / 64 KB uniform |
| Sector Architecture | — | Uniform 4 KB sectors |
| Deep Power-Down Current | — | [DATA_NEEDED: typical deep power-down current in uA] |
| Active Read Current | — | [DATA_NEEDED: active read current in mA] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Write-Protect Pin | — | Yes (/WP) |
| Hold Pin | — | Yes (/HOLD) |
| JEDEC ID Read | — | Yes |
| Nivel MSL | — | 3 (per JEDEC J-STD-020, typical for SOIC flash) |
| Estado RoHS | — | Compliant (Green) |
| Lead-Free | — | Yes |
| Estado del ciclo de vida | — | Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T |
| Packaging | — | Tape & Reel (suffix -T) |