BAT43 vs BAT42 Comparación
Comparación detallada lado a lado de BAT43 por STMicroelectronics y BAT42 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BAT43 | BAT42 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,08 | $0,02 |
| Device Type | Small Signal Schottky Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Forward Continuous Current (IF) | 200 mA at Ta = 25 C | — |
| Repetitive Peak Forward Current (IFRM) | 500 mA (tp <= 1 s, delta <= 0.5) | — |
| Non-Repetitive Surge Current (IFSM) | 4 A (tp = 10 ms) | — |
| Disipación de potencia (Ptot) | 200 mW at Tl = 65 C | — |
| Technology | Metal-to-silicon Schottky barrier | Metal-to-silicon Schottky junction with guard ring ESD protection |
| ESD Protection | Integrated guard ring against excessive voltage | — |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current] | — |
| Encapsulado | DO-35 (glass axial, through-hole) | DO-35 axial through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Case Style | Hermetically sealed glass body | — |
| Configuration | Single diode | Single diode |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Diode Type | — | Small Signal Schottky Barrier |
| Repetitive Reverse Voltage (VRRM) | — | 30 V |
| Average Forward Current (IF(AV)) | — | 200 mA |
| Forward Voltage (VF) | — | [DATA_NEEDED: forward voltage at rated current] |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Junction Operating Temperature | — | up to 125 C |
| Switching Speed | — | Fast (Schottky, no reverse recovery) |
| Application Class | — | General purpose fast switching |
| Manufacturer | — | STMicroelectronics |