BAT43 vs BAT42 비교

다음의 상세 나란히 비교: BAT43 제조: STMicroelectronics 및 BAT42 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BAT43 BAT42
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.08 $0.02
Device Type Small Signal Schottky Diode —
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Forward Continuous Current (IF) 200 mA at Ta = 25 C —
Repetitive Peak Forward Current (IFRM) 500 mA (tp <= 1 s, delta <= 0.5) —
Non-Repetitive Surge Current (IFSM) 4 A (tp = 10 ms) —
전력 손실 (Ptot) 200 mW at Tl = 65 C —
Technology Metal-to-silicon Schottky barrier Metal-to-silicon Schottky junction with guard ring ESD protection
ESD Protection Integrated guard ring against excessive voltage —
Forward Voltage [DATA_NEEDED: forward voltage at rated current] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current] —
패키지 DO-35 (glass axial, through-hole) DO-35 axial through-hole
실장 유형 Through Hole Through Hole
Case Style Hermetically sealed glass body —
Configuration Single diode Single diode
동작 온도 [DATA_NEEDED: operating temperature range] —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Diode Type — Small Signal Schottky Barrier
Repetitive Reverse Voltage (VRRM) — 30 V
Average Forward Current (IF(AV)) — 200 mA
Forward Voltage (VF) — [DATA_NEEDED: forward voltage at rated current]
Non-Repetitive Peak Forward Surge Current (IFSM) — 4 A
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Operating Temperature — up to 125 C
Switching Speed — Fast (Schottky, no reverse recovery)
Application Class — General purpose fast switching
Manufacturer — STMicroelectronics

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